JPS62196360U - - Google Patents
Info
- Publication number
- JPS62196360U JPS62196360U JP1986084707U JP8470786U JPS62196360U JP S62196360 U JPS62196360 U JP S62196360U JP 1986084707 U JP1986084707 U JP 1986084707U JP 8470786 U JP8470786 U JP 8470786U JP S62196360 U JPS62196360 U JP S62196360U
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- impurity concentration
- channel layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 3
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000005669 field effect Effects 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986084707U JPS62196360U (US07696358-20100413-C00002.png) | 1986-06-05 | 1986-06-05 | |
| US07/055,314 US4816880A (en) | 1986-06-05 | 1987-05-29 | Junction field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986084707U JPS62196360U (US07696358-20100413-C00002.png) | 1986-06-05 | 1986-06-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62196360U true JPS62196360U (US07696358-20100413-C00002.png) | 1987-12-14 |
Family
ID=13838134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986084707U Pending JPS62196360U (US07696358-20100413-C00002.png) | 1986-06-05 | 1986-06-05 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4816880A (US07696358-20100413-C00002.png) |
| JP (1) | JPS62196360U (US07696358-20100413-C00002.png) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4939099A (en) * | 1988-06-21 | 1990-07-03 | Texas Instruments Incorporated | Process for fabricating isolated vertical bipolar and JFET transistors |
| US5118632A (en) * | 1989-10-20 | 1992-06-02 | Harris Corporation | Dual layer surface gate JFET having enhanced gate-channel breakdown voltage |
| US5008719A (en) * | 1989-10-20 | 1991-04-16 | Harris Corporation | Dual layer surface gate JFET having enhanced gate-channel breakdown voltage |
| US5120669A (en) * | 1991-02-06 | 1992-06-09 | Harris Corporation | Method of forming self-aligned top gate channel barrier region in ion-implanted JFET |
| US5248626A (en) * | 1992-08-28 | 1993-09-28 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating self-aligned gate diffused junction field effect transistor |
| JP3363561B2 (ja) * | 1993-03-01 | 2003-01-08 | セイコーインスツルメンツ株式会社 | 接合型電界効果トランジスタ |
| US5838192A (en) * | 1996-01-17 | 1998-11-17 | Analog Devices, Inc. | Junction field effect voltage reference |
| EP0849771A1 (en) * | 1996-12-19 | 1998-06-24 | Motorola Semiconducteurs S.A. | Method of forming a depletion jfet and method of forming a depletion jfet and a bipolar transistor on a semiconductor substrate |
| DE102004018153B9 (de) * | 2004-04-08 | 2012-08-23 | Austriamicrosystems Ag | Hochvolt-Sperrschicht-Feldeffekttransistor mit retrograder Gatewanne und Verfahren zu dessen Herstellung |
| US7411231B2 (en) * | 2005-12-22 | 2008-08-12 | Analog Devices, Inc. | JFET with drain and/or source modification implant |
| US20080099798A1 (en) * | 2006-10-31 | 2008-05-01 | Douglas Kerns | Methods and devices for amplifying a signal |
| TW200910470A (en) * | 2007-05-03 | 2009-03-01 | Dsm Solutions Inc | Enhanced hole mobility p-type JFET and fabrication method therefor |
| FR3045937A1 (fr) * | 2015-12-21 | 2017-06-23 | St Microelectronics Crolles 2 Sas | Procede de fabrication d'un transistor jfet au sein d'un circuit integre et circuit integre correspondant. |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57211278A (en) * | 1981-06-23 | 1982-12-25 | Nec Corp | Semiconductor device |
| JPS5889872A (ja) * | 1981-11-24 | 1983-05-28 | Hitachi Ltd | 接合形電界効果半導体装置 |
| JPS60137072A (ja) * | 1983-12-26 | 1985-07-20 | Matsushita Electronics Corp | 接合型電界効果トランジスタの製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5830163A (ja) * | 1981-08-18 | 1983-02-22 | Matsushita Electric Ind Co Ltd | 接合形電界効果トランジスタ |
| JPS62500343A (ja) * | 1984-10-05 | 1987-02-05 | アナログ デバイセス インコ−ポレ−テツド | 低漏洩接合型電界効果トランジスタ |
-
1986
- 1986-06-05 JP JP1986084707U patent/JPS62196360U/ja active Pending
-
1987
- 1987-05-29 US US07/055,314 patent/US4816880A/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57211278A (en) * | 1981-06-23 | 1982-12-25 | Nec Corp | Semiconductor device |
| JPS5889872A (ja) * | 1981-11-24 | 1983-05-28 | Hitachi Ltd | 接合形電界効果半導体装置 |
| JPS60137072A (ja) * | 1983-12-26 | 1985-07-20 | Matsushita Electronics Corp | 接合型電界効果トランジスタの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4816880A (en) | 1989-03-28 |
