JPS62195069A - Paste for bonding semiconductor element - Google Patents
Paste for bonding semiconductor elementInfo
- Publication number
- JPS62195069A JPS62195069A JP3499686A JP3499686A JPS62195069A JP S62195069 A JPS62195069 A JP S62195069A JP 3499686 A JP3499686 A JP 3499686A JP 3499686 A JP3499686 A JP 3499686A JP S62195069 A JPS62195069 A JP S62195069A
- Authority
- JP
- Japan
- Prior art keywords
- paste
- semiconductor element
- bonding semiconductor
- ion exchange
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 238000005342 ion exchange Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 12
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 7
- 239000000057 synthetic resin Substances 0.000 claims abstract description 7
- 239000000945 filler Substances 0.000 claims abstract description 6
- 125000000524 functional group Chemical group 0.000 claims abstract description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 6
- 229910001410 inorganic ion Inorganic materials 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 abstract description 5
- 229920000647 polyepoxide Polymers 0.000 abstract description 5
- 150000003839 salts Chemical class 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000843 powder Substances 0.000 abstract description 4
- AQTIRDJOWSATJB-UHFFFAOYSA-K antimonic acid Chemical compound O[Sb](O)(O)=O AQTIRDJOWSATJB-UHFFFAOYSA-K 0.000 abstract description 3
- 230000007062 hydrolysis Effects 0.000 abstract description 3
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 238000013329 compounding Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 229910001413 alkali metal ion Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 239000011231 conductive filler Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- TYAVIWGEVOBWDZ-UHFFFAOYSA-K cerium(3+);phosphate Chemical compound [Ce+3].[O-]P([O-])([O-])=O TYAVIWGEVOBWDZ-UHFFFAOYSA-K 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- QUBMWJKTLKIJNN-UHFFFAOYSA-B tin(4+);tetraphosphate Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QUBMWJKTLKIJNN-UHFFFAOYSA-B 0.000 description 2
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 2
- JUWGUJSXVOBPHP-UHFFFAOYSA-B titanium(4+);tetraphosphate Chemical compound [Ti+4].[Ti+4].[Ti+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O JUWGUJSXVOBPHP-UHFFFAOYSA-B 0.000 description 2
- 229910000166 zirconium phosphate Inorganic materials 0.000 description 2
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 description 2
- ATVJXMYDOSMEPO-UHFFFAOYSA-N 3-prop-2-enoxyprop-1-ene Chemical class C=CCOCC=C ATVJXMYDOSMEPO-UHFFFAOYSA-N 0.000 description 1
- DJHGAFSJWGLOIV-UHFFFAOYSA-K Arsenate3- Chemical compound [O-][As]([O-])([O-])=O DJHGAFSJWGLOIV-UHFFFAOYSA-K 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005349 anion exchange Methods 0.000 description 1
- 229940000489 arsenate Drugs 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910000174 eucryptite Inorganic materials 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910000462 iron(III) oxide hydroxide Inorganic materials 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- CVMIVKAWUQZOBP-UHFFFAOYSA-L manganic acid Chemical compound O[Mn](O)(=O)=O CVMIVKAWUQZOBP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- IYDGMDWEHDFVQI-UHFFFAOYSA-N phosphoric acid;trioxotungsten Chemical compound O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.OP(O)(O)=O IYDGMDWEHDFVQI-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 150000007519 polyprotic acids Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- -1 titanium arsenate Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- APPHRAMBJODYPA-UHFFFAOYSA-B tris(1-oxo-2,4,5-trioxa-1lambda5-arsa-3-stannabicyclo[1.1.1]pentan-3-yl) arsorate Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-][As]([O-])([O-])=O.[O-][As]([O-])([O-])=O.[O-][As]([O-])([O-])=O.[O-][As]([O-])([O-])=O APPHRAMBJODYPA-UHFFFAOYSA-B 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
、 ［発明の技術分野］
本発明は、半導体チップの接着に適した半導体素子接着
用ペーストに関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor element bonding paste suitable for bonding semiconductor chips.
［発明の技術的背景とその問題点］
半導体装置の製造において、金属薄板（リードフレーム
）上の所定部分に、・ＩＣ，Ｌ、ＳＩ等の半導体チップ
を電気的に接続する工程（マウント工程）は、半導体装
置の長期信頼性に影響を与える重要な工程の１つである
。 従来、この接続方法として、チップ裏面のＳｉ面を
リードフレーム上のＡｕメッキ面に加熱圧接するという
Ａｕ −８ｉの共晶法が主流であった。 しかし、近年
の貴金属、特にＡ、ｕの高騰を契機として、樹脂モール
ド型半導体装置ではＡｌ１−３ｉ共晶法から、半田を使
用する方法、導電性接着剤を使用する方法などに急速に
移行しつつある。[Technical background of the invention and its problems] In the manufacturing of semiconductor devices, there is a process (mounting process) of electrically connecting semiconductor chips such as IC, L, SI, etc. to a predetermined part on a thin metal plate (lead frame). is one of the important steps that affect the long-term reliability of semiconductor devices. Conventionally, the mainstream method for this connection has been the Au-8i eutectic method, in which the Si surface on the back of the chip is heated and pressure-bonded to the Au plating surface on the lead frame. However, with the rise in the prices of precious metals, especially A and U, in recent years, resin-molded semiconductor devices have rapidly shifted from the Al1-3i eutectic method to methods that use solder and conductive adhesives. It's coming.
しかし、半田を使用する方法は、一部実用化されてはい
るが半田や半田ボールが飛散して電極等に付着し、腐食
断線の原因となる欠点がある。However, although some methods using solder have been put into practical use, they have the disadvantage that solder and solder balls scatter and adhere to electrodes and the like, causing corrosion and disconnection.
一方、導電性接着剤を使用する方法は、通常Ａｇ粉末を
配合したエポキシ樹脂が用いられて、約１０年程前から
一部実用化されてきたが、Ａｕ−８ｉ、の共晶合金を生
成させる共晶法に比較して信頼性の面で満足すべきもの
がなかった。 またこの方法は、半田法に比べて耐熱性
に優れている等の長所を有してい、るが、樹脂やその硬
化剤が半導体素子接着用として作られたものでないため
に、耐湿性に劣ってアルミニウム電極の腐食を促進し断
線不良の原因となる場合が多く、やはりＡｕ −８ｉ共
晶法に比べて信頼性に劣っていた。On the other hand, the method of using conductive adhesive, which usually uses epoxy resin mixed with Ag powder, has been partially put into practical use for about 10 years, but it produces a eutectic alloy of Au-8i. Compared to the eutectic method, there was no satisfactory reliability in terms of reliability. In addition, this method has advantages such as superior heat resistance compared to the soldering method, but because the resin and its curing agent are not made for bonding semiconductor elements, it has inferior moisture resistance. This often promotes corrosion of the aluminum electrode and causes disconnection defects, and the reliability was still inferior to the Au-8i eutectic method.
［発明の目的］
本発明は、上記の実情に鑑みてなされたもので、その目
的は、半導体チップへの接着性、耐加水分解性に優れる
とともに、半導体装置の耐湿信頼性を大幅に向上させる
半導体素子接着用ペーストを提供しようとするものであ
る。[Object of the Invention] The present invention has been made in view of the above-mentioned circumstances, and its purpose is to provide a semiconductor device with excellent adhesion to semiconductor chips and hydrolysis resistance, and to significantly improve the moisture resistance reliability of semiconductor devices. The present invention aims to provide a paste for bonding semiconductor elements.
［発明の概要コ
本発明者らは、上記の目的を達成しようと鋭意研究を重
ねた結果、樹脂中にＯＨ基を有する無機イオン交換性物
質を配合し、不純物を捕捉固定し可動の不純物イオンを
低減させることにより、半導体素子の信頼性が向上する
ことを見いだし、本発明を完成させたものである。 即
ち、本発明は、合成樹脂、充填剤および官能基としてＯ
１２基を有する無機オン交換物質を含有することを特徴
とする半導体素子接着用ペーストである。 そして、好
適には、該無機イオン交換物質を１〜２０重量％の割合
で含有させた半導体素子接着用ペーストである。[Summary of the Invention] As a result of intensive research to achieve the above object, the present inventors have incorporated an inorganic ion exchange material having an OH group into a resin to capture and fix impurities and create movable impurity ions. The present invention was completed based on the discovery that the reliability of semiconductor devices can be improved by reducing the . That is, the present invention uses O as a synthetic resin, a filler, and a functional group.
This is a paste for bonding semiconductor devices, characterized by containing an inorganic on-exchange substance having 12 groups. Preferably, the paste for bonding semiconductor devices contains the inorganic ion exchange material in an amount of 1 to 20% by weight.
本発明に用いる合成樹脂としては、エポキシ樹脂、ポリ
エステル樹脂、ポリアミド樹脂、ポリイミド樹脂、ポリ
アミド−エステル樹脂、ポリイミド−エステル樹脂、ポ
リブタジェン系樹脂等が挙げられ、これらは単独もしく
は２種以上混合して用いる。 またこれらの合成樹脂に
は反応性の希釈剤としてアリルエーテル化合物や七ノエ
ポキシ化合物を加えることもできる。The synthetic resins used in the present invention include epoxy resins, polyester resins, polyamide resins, polyimide resins, polyamide-ester resins, polyimide-ester resins, polybutadiene resins, etc., and these may be used alone or in combination of two or more. . Moreover, allyl ether compounds and heptanoepoxy compounds can be added to these synthetic resins as reactive diluents.
本発明に用いる充填剤としては、導電性又は非導電性い
ずれの充填剤も広く使用することができる。 導電性充
填剤としては、金粉末、銀粉末、銅粉末、ニッケル粉末
、アルミニウム粉末、表面に金属層を有する樹脂粉末等
が挙げられ、一方、非導電性充填剤としては、シリカ粉
末、タルク、水和アルミナ、β−ユークリプタイト等が
挙げられ、これらは単独もしくは２種以上混合して使用
する。As the filler used in the present invention, either conductive or non-conductive fillers can be widely used. Examples of conductive fillers include gold powder, silver powder, copper powder, nickel powder, aluminum powder, resin powder having a metal layer on the surface, etc., while non-conductive fillers include silica powder, talc, Examples include hydrated alumina and β-eucryptite, which may be used alone or in combination of two or more.
本発明に用いる官能基としてＯＨ基を有する無機イオン
交換物質としては、アルカリ金属イオンに対する交換性
を有するイオン交換性のものと、ハロゲンイオン交換性
をもつ陰イオン交換性のものに分けることができる。
アルカリ金属イオン交換物質としては、アンチモン酸、
スズ酸、チタン酸、ニオブ酸、マンガン酸等の多価金属
酸およびその多価金属酸の塩、リン酸ジルコニウム、リ
ン酸チタン、リン酸スズ、リン酸セリウム、ヒ酸スズ、
ヒ酸チタン等の多価金属多塩基酸塩、モリブドリン酸、
リンタングステン酸等のへテロポリ酸等が挙げられる。Inorganic ion exchange materials having OH groups as functional groups used in the present invention can be divided into ion exchange materials that have exchange properties for alkali metal ions and anion exchange materials that have halogen ion exchange properties. .
As alkali metal ion exchange substances, antimonic acid,
Polyvalent metal acids such as stannic acid, titanic acid, niobic acid, manganic acid and their salts, zirconium phosphate, titanium phosphate, tin phosphate, cerium phosphate, tin arsenate,
Polyvalent metal polybasic acid salts such as titanium arsenate, molybdophosphoric acid,
Examples include heteropolyacids such as phosphotungstic acid.
これらはすべてイオン交換性を示す−０−１−１＋結
合を有し、このＨ＋がアルカリ金属イオンと交換するも
のであって、例示された以外に同様の機能を有するアル
カリ金属イオン交換性物質も、本発明の無機イオン交換
性物質に包含される。 また、ハロゲンイオン交換性物
質としては、上記と同様の一〇Ｈ結合を有するもので、
ハイドロタルサイト（Ｍ（ｌ ｔ、 ・Ａ１２ （ＯＨ
）１６ＧＯ！ ・ ４Ｈ２０）、鉄酸、シ／Ｌ／ Ｄ
二ｒ’）ム酸、チタン酸、含水３＠化ビスマス酸等の
含水酸化物を挙げることができ、これらは前記のアルカ
リ金属イオン交換性物質と併用することもできる。 ま
たこれらのイオン交換性物質は単独、混合品、又は複塩
などの各種の態様で使用してもよく、目的によって使い
分けることができる。 上述の各種無機イオン交換性物
質のうち、特に有用なものは、アンチモン酸およびその
塩、リン酸ジルコニウム、リン酸セリウム、リン酸スズ
、リン酸チタン、含水酸化ビスマス、含水酸化マンガン
、含水酸化スズ、含水酸化チタン、含水酸化ジルコニウ
ム等である。 この無機イオン交換性物質の使用は、半
導体素子接着用ペーストの捕捉すべきイオンの種類、量
およびペーストとして他の物性のバランス等から決定さ
れる。 通常の配合割合は、ペースト全体に対して０．
１〜２０重量％であることが好ましい。 なかでも０．
５〜１０重量％の範囲が特に好適である。 配合割合が
０．１重量％未満ではイオン性不純物の捕捉固定が困難
で好ましくなく、また２０重量％を超えるとペースト本
来の特性が悪くなり好ましくない。All of these have -0-1-1+ bonds that exhibit ion exchange properties, and this H+ exchanges with alkali metal ions.In addition to the examples listed, there are also alkali metal ion exchange substances that have similar functions. , are included in the inorganic ion exchange material of the present invention. In addition, as a halogen ion exchange substance, one having the same 10H bond as above,
Hydrotalcite (M(lt, ・A12 (OH
)16GO!・4H20), ferric acid, C/L/D
Hydrous oxides such as 2r') muic acid, titanic acid, and hydrated 3@-bismuth acid can be used, and these can also be used in combination with the alkali metal ion exchangeable substances. Further, these ion-exchangeable substances may be used alone, in mixtures, or in various forms such as double salts, and can be used depending on the purpose. Among the various inorganic ion exchange substances mentioned above, particularly useful ones are antimonic acid and its salts, zirconium phosphate, cerium phosphate, tin phosphate, titanium phosphate, hydrated bismuth oxide, hydrated manganese oxide, and hydrated tin oxide. , hydrated titanium oxide, hydrated zirconium oxide, etc. The use of this inorganic ion exchange material is determined based on the type and amount of ions to be captured in the paste for bonding semiconductor elements, and the balance of other physical properties of the paste. The usual blending ratio is 0.
It is preferably 1 to 20% by weight. Especially 0.
A range of 5 to 10% by weight is particularly preferred. If the blending ratio is less than 0.1% by weight, it is difficult to capture and fix ionic impurities, which is undesirable, and if it exceeds 20% by weight, the inherent properties of the paste deteriorate, which is not preferred.
本発明の半導体素子接着用ペーストは、合成樹脂、充填
剤および無機イオン交換性物質を含むが、本発明の趣旨
をそこなわない限り、必要に応じて他の成分を添加する
こともできる。 本発明のペーストは、所定の成分を配
合し、セラミック三本ロールにて３回混練して容易につ
くることができ、半導体チップの接着等に使用される。The paste for adhering semiconductor elements of the present invention contains a synthetic resin, a filler, and an inorganic ion exchange material, but other components may be added as necessary, as long as they do not impair the spirit of the present invention. The paste of the present invention can be easily made by blending predetermined ingredients and kneading three times using a ceramic triple roll, and is used for bonding semiconductor chips, etc.
［発明の実施例］
次に本発明を実施例によって説明するが本発明はこれら
の実施例によって限定されるものではない。 実施例お
よび比較例において１部」は特に説明のない限り「重量
部」を意味する。[Examples of the Invention] Next, the present invention will be explained by examples, but the present invention is not limited by these examples. In Examples and Comparative Examples, "1 part" means "part by weight" unless otherwise specified.
実施例 １
アンチモン酸スズ０．４部、エポキシ系樹脂の無溶剤型
バインダーおよび銀粉末からなる銀ペースト １００部
を、セラミック三本ロールで３回混練して、半導体素子
接着用ペースト（Ａ）を得た。Example 1 100 parts of silver paste consisting of 0.4 parts of tin antimonate, a solvent-free binder of epoxy resin, and silver powder were kneaded three times with a ceramic triple roll to obtain paste (A) for bonding semiconductor elements. Obtained.
実施例 ２
アンチモン酸マンガン１．０部、ポリイミド系樹脂バイ
ンダーおよび銀粉末からなる銀ペースト１００部を、実
施例１と同様に混練して半導体素子接着用ペースト（Ｂ
）を得た。Example 2 100 parts of silver paste consisting of 1.0 part of manganese antimonate, a polyimide resin binder, and silver powder were kneaded in the same manner as in Example 1 to prepare a paste for bonding semiconductor elements (B
) was obtained.
実施例 ３
アンチモン酸ビスマス１．０部、酸無水物硬化型エポキ
シ樹脂バインダーおよび銀粉末からなる銀ペースト １
００部を、実施例１と同様に混練して半導体素子接着用
ペースト（Ｃ）を得た。Example 3 Silver paste consisting of 1.0 part of bismuth antimonate, an acid anhydride-curable epoxy resin binder, and silver powder 1
00 parts were kneaded in the same manner as in Example 1 to obtain a paste for bonding semiconductor elements (C).
比較例 １〜３
実施例１〜３の配合において無機イオン交換性物質を加
えないペーストを、比較例１〜３の接着ペースト（Ａ−
１、Ｂ−１、Ｃ−１）とした。Comparative Examples 1 to 3 The adhesive pastes of Comparative Examples 1 to 3 (A-
1, B-1, C-1).
実施例１〜３および比較例１〜３で得られた接着ペース
トの不純物イオンの分析、耐湿性および接着性を試験し
た。 その結果を第１表に示したが、本発明のペースト
は比較例のものに比べて抽出される可動の不純物イオン
の量の少ないことがわかる。The adhesive pastes obtained in Examples 1 to 3 and Comparative Examples 1 to 3 were analyzed for impurity ions, and tested for moisture resistance and adhesiveness. The results are shown in Table 1, and it can be seen that the paste of the present invention has a smaller amount of extracted mobile impurity ions than the paste of the comparative example.
第１表 度。Table 1 Every time.
し発明の効果］
本発明の半導体素子接着用ペーストは、接着性、耐加水
分解性に優れているとともに、抽出される可動の不純物
イオンが少なく、電極の腐食が少なく、断線不良となる
ことがない。 従って、このペーストを使用した半導体
装置では耐湿信頼性を大幅に向上させることができる。[Effects of the Invention] The paste for bonding semiconductor elements of the present invention has excellent adhesion and hydrolysis resistance, and has few movable impurity ions extracted, less corrosion of electrodes, and no disconnection defects. do not have. Therefore, the moisture resistance reliability of a semiconductor device using this paste can be greatly improved.
特許出願人 東芝ケミカル株式会社 −１〇−Patent applicant: Toshiba Chemical Corporation -1〇-
Claims (1)
る無機イオン交換性物質を含有することを特徴とする半
導体素子接着用ペースト。 ２ 官能基としてＯＨ基を有する無機イオン交換性物質
が、０．１〜２０重量％の割合で含有される特許請求の
範囲第１項記載の半導体素子接着用ペースト。[Scope of Claims] 1. A paste for adhering semiconductor devices, characterized by containing a synthetic resin, a filler, and an inorganic ion exchange material having an OH group as a functional group. 2. The paste for bonding semiconductor elements according to claim 1, which contains an inorganic ion exchange material having an OH group as a functional group in a proportion of 0.1 to 20% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61034996A JPH0623352B2 (en) | 1986-02-21 | 1986-02-21 | Paste for bonding semiconductor elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61034996A JPH0623352B2 (en) | 1986-02-21 | 1986-02-21 | Paste for bonding semiconductor elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62195069A true JPS62195069A (en) | 1987-08-27 |
| JPH0623352B2 JPH0623352B2 (en) | 1994-03-30 |
Family
ID=12429748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61034996A Expired - Fee Related JPH0623352B2 (en) | 1986-02-21 | 1986-02-21 | Paste for bonding semiconductor elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0623352B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08113769A (en) * | 1994-10-19 | 1996-05-07 | Tosoh Corp | Bonding composition and laminate using bonding composition |
| WO1999060070A1 (en) * | 1998-05-19 | 1999-11-25 | Sony Chemicals Corp. | Adhesive and circuit material using the adhesive |
| JP2000292916A (en) * | 1999-04-05 | 2000-10-20 | Murata Mfg Co Ltd | Paste composition, green sheet and multilayered circuit board |
| JP2009127043A (en) * | 2007-11-28 | 2009-06-11 | Lintec Corp | Tacky adhesive composition, tacky-adhesive sheet and method for manufacturing semiconductor device |
| JP2018125349A (en) * | 2017-01-30 | 2018-08-09 | 新光電気工業株式会社 | Semiconductor device and manufacturing method of the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54161645A (en) * | 1978-06-12 | 1979-12-21 | Sekisui Chem Co Ltd | High-frequency heating adhesive |
| JPS58113250A (en) * | 1981-12-26 | 1983-07-06 | Nitto Electric Ind Co Ltd | Conductive silver paste composition and semiconductive device using the same |
| JPS60221473A (en) * | 1984-04-18 | 1985-11-06 | Toyo Linoleum Mfg Co Ltd:The | Solvent type adhesive |
| JPS6178884A (en) * | 1984-09-27 | 1986-04-22 | Toyota Central Res & Dev Lab Inc | Anticorrosive adhesive |
-
1986
- 1986-02-21 JP JP61034996A patent/JPH0623352B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54161645A (en) * | 1978-06-12 | 1979-12-21 | Sekisui Chem Co Ltd | High-frequency heating adhesive |
| JPS58113250A (en) * | 1981-12-26 | 1983-07-06 | Nitto Electric Ind Co Ltd | Conductive silver paste composition and semiconductive device using the same |
| JPS60221473A (en) * | 1984-04-18 | 1985-11-06 | Toyo Linoleum Mfg Co Ltd:The | Solvent type adhesive |
| JPS6178884A (en) * | 1984-09-27 | 1986-04-22 | Toyota Central Res & Dev Lab Inc | Anticorrosive adhesive |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08113769A (en) * | 1994-10-19 | 1996-05-07 | Tosoh Corp | Bonding composition and laminate using bonding composition |
| WO1999060070A1 (en) * | 1998-05-19 | 1999-11-25 | Sony Chemicals Corp. | Adhesive and circuit material using the adhesive |
| JP2000292916A (en) * | 1999-04-05 | 2000-10-20 | Murata Mfg Co Ltd | Paste composition, green sheet and multilayered circuit board |
| JP2009127043A (en) * | 2007-11-28 | 2009-06-11 | Lintec Corp | Tacky adhesive composition, tacky-adhesive sheet and method for manufacturing semiconductor device |
| JP2018125349A (en) * | 2017-01-30 | 2018-08-09 | 新光電気工業株式会社 | Semiconductor device and manufacturing method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0623352B2 (en) | 1994-03-30 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |