JPS62176003A - Conductive adhesive paste - Google Patents
Conductive adhesive pasteInfo
- Publication number
- JPS62176003A JPS62176003A JP1627186A JP1627186A JPS62176003A JP S62176003 A JPS62176003 A JP S62176003A JP 1627186 A JP1627186 A JP 1627186A JP 1627186 A JP1627186 A JP 1627186A JP S62176003 A JPS62176003 A JP S62176003A
- Authority
- JP
- Japan
- Prior art keywords
- paste
- conductive adhesive
- silver
- melting point
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000001070 adhesive effect Effects 0.000 title claims description 21
- 239000000853 adhesive Substances 0.000 title claims description 20
- 239000011521 glass Substances 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- NPAAPVNPKGDSFN-UHFFFAOYSA-N acetic acid;2-(2-hydroxyethoxy)ethanol Chemical compound CC(O)=O.OCCOCCO NPAAPVNPKGDSFN-UHFFFAOYSA-N 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims 1
- 239000011812 mixed powder Substances 0.000 claims 1
- 239000000919 ceramic Substances 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000007639 printing Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XXXFZKQPYACQLD-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethyl acetate Chemical compound CC(=O)OCCOCCO XXXFZKQPYACQLD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 229940023462 paste product Drugs 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は低融点硝子、金部粉末、有機溶媒から構成され
る４電性接着ペーストに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a tetraelectric adhesive paste composed of low melting point glass, gold powder, and an organic solvent.
従来使用されている導電性接着ペーストは、スクリーン
印刷等で目的の形状に塗布した後８５０〜１０００℃で
焼成して厚膜ＩＣ用パターン又は抵抗体を得ている。こ
の導電体として金、銀、銀−パラジクム等のペーストが
使用されて来た。又、ＩＣ，ＬＳＩ等の半導体素子（以
後チップと呼ぶ）の接着用には次の様な方法で行ってい
た。金属にチップを接着する場合は、全編上に金メッキ
又は銀メッキした物、又図２に示す様にセラミック１に
はモリブデン又はタングステン２を印刷・焼成してメク
ライズ化した後ニッケル＋金メッキをしだ物あるいはセ
ラミック上に高融点硝子を含有した金ペーストを８５０
〜１０００℃で焼成して硝子によってセラミック上に金
を接着した物等があり、それぞれとチップ３とｉｊ、金
−シリコン合金４を介して接着するものである。Conventionally used conductive adhesive pastes are applied to a desired shape by screen printing or the like and then baked at 850 to 1000°C to obtain thick film IC patterns or resistors. Pastes of gold, silver, silver-palladium, etc. have been used as the conductor. Further, the following method has been used for bonding semiconductor elements (hereinafter referred to as chips) such as ICs and LSIs. When bonding a chip to metal, the entire surface should be plated with gold or silver, or as shown in Figure 2, ceramic 1 should be printed with molybdenum or tungsten 2, fired to make it Meclized, and then plated with nickel and gold. 850 gold paste containing high melting point glass on material or ceramic
There is one in which gold is bonded onto ceramic through glass by firing at ~1000°C, and these are bonded via chips 3 and ij and gold-silicon alloy 4, respectively.
又、銀ペーストにおける接着は、エポキシ系樹脂に微細
なる銀粉を任意の割合で混合したものを用いる。接着方
法は、ペースト状の接着材を取付け部に印刷又は滴下に
より付着させこの上にチップを固着後１５０〜２００℃
で１０〜２０分ぺ一りすると接着材のエポキシ樹脂が重
合・硬化して接着される。For adhesion using silver paste, an epoxy resin mixed with fine silver powder in an arbitrary ratio is used. The bonding method is to apply a paste-like adhesive to the mounting area by printing or dropping it, and after fixing the chip on top of it, heat the paste at 150 to 200℃.
After 10 to 20 minutes, the adhesive epoxy resin polymerizes and hardens, forming a bond.
上述したセラミック上に金ペーストを印刷した方法又は
、モリブデン、タングステンをメタライズした方法等は
、チップ接着後の熱放散性、接着強度等充分信頼性のあ
る方法として応く使用されているがパッケージの製造工
程が長く、金を使用する為に高価になる欠点があった。The methods described above, such as printing gold paste on ceramic or metallizing molybdenum or tungsten, are used as methods that are sufficiently reliable in terms of heat dissipation and adhesive strength after chip bonding, but the It had the disadvantage of being expensive due to the long manufacturing process and the use of gold.
又、エポキシ系銀ペーストは、ペースト自体安価で、Ｉ
Ｃチップの接着方法も藺単になるので安価に製造できる
が、熱放散性の悪さ、電気伝導度の悪さなどがあシあま
シ信頼性がないので応く使用されていなかった。In addition, epoxy silver paste is inexpensive, and I
The C-chip bonding method is also simple, so it can be manufactured at low cost, but it has poor heat dissipation, poor electrical conductivity, and other unreliability, so it has not been used.
即ち本発明は、高熱伝導金属として銀、接着材料として
ＰｂＯ ｎ２ｏ、 ８ｔＯｚ Ａｌｔｏｓ糸低融点硝子
を上記金属粉末とを混合し、この混合比は金属：低融点
硝子−３０〜９０％：１０〜７０％（重量比）であり、
この混合物に有機溶媒酢酸ジエチレングリコール系エー
テルを任意の割合で混合して粘着流動性を与えて印刷、
スタンピング又は滴下方法にて本ペーストをセラミック
等に被着する。That is, the present invention mixes silver as a high thermal conductivity metal, PbO n2o as an adhesive material, 8tOz Altos thread, and low melting point glass with the above metal powder, and the mixing ratio is metal:low melting point glass -30 to 90%:10 to 70%. % (weight ratio),
This mixture is mixed with an organic solvent, acetic acid diethylene glycol ether, in an arbitrary ratio to give adhesive fluidity, and then printed.
This paste is applied to ceramic etc. by stamping or dropping method.
次に本発明の実施例を第１図断面図を用いて説明する。 Next, an embodiment of the present invention will be described using the sectional view of FIG.
即ち本発明は高熱伝導金属として銀、接着材料としてＰ
ｂｏ Ｂ２Ｏ３８１０□−Ａｌ ｘＯｓ糸低腿硝子を
上記金机粉末とを混合し、この混合比は金属：低融点硝
子＝３０〜９０％：ｌＯ〜７０％（１量比）でありこの
混合物をボールミルによシ１０数μｍ程度に粉砕して有
機溶媒として酢酸ジエチレングリコール系エーテルを任
意の割合に加えてペースト状にして印刷又はスタンピン
グ又は滴下に適した粘度に調整したものである。That is, the present invention uses silver as a high heat conductive metal and P as an adhesive material.
bo B2O3810□-Al xOs thread low glass was mixed with the above-mentioned Kinki powder, and the mixing ratio was metal:low melting point glass=30~90%:lO~70% (1 quantity ratio), and this mixture was ball milled. It is ground to a size of about 10-odd micrometers, and diethylene glycol acetate ether is added as an organic solvent in any proportion to form a paste, and the viscosity is adjusted to be suitable for printing, stamping, or dropping.
第１図はセラミック１に印刷９滴下又はスタンピングな
どの方法によυ本発明の導電性接着ペースト５を塗布し
この上にチップ３を押し当ててチップ周辺にメニスカス
が生じる様になじませる。In FIG. 1, a conductive adhesive paste 5 of the present invention is applied to a ceramic 1 by a method such as printing or stamping, and a chip 3 is pressed onto the paste to blend it so that a meniscus is formed around the chip.
次にこのセラミック１を１５０，３００，４５０℃各５
分程度ベークする事によって１５０，３００℃で有機溶
媒が蒸発分解し４５０℃で低融点硝子が軟化して接着効
果を現わす。この状態が第１図の断面図である。Next, this ceramic 1 was heated to 50°C, 300°C, and 450°C each.
By baking for about a minute, the organic solvent evaporates and decomposes at 150,300°C, and the low melting point glass softens at 450°C, producing an adhesive effect. This state is shown in the sectional view of FIG.
この導電性接着ペーストは、鉄粉末と低融点硝子の組成
比により熱抵抗比（金ペースト品の熱抵抗を１とした時
の値）と電気抵抗について比較すると表に示した様に銀
含有量の増加と共に電気抵抗は減少し熱抵抗比もｌに近
ずく。This conductive adhesive paste has a silver content as shown in the table when comparing the thermal resistance ratio (value when the thermal resistance of the gold paste product is 1) and electrical resistance depending on the composition ratio of iron powder and low melting point glass. As , the electrical resistance decreases and the thermal resistance ratio approaches l.
以上説明したようにチップから発生する熱の放散はチッ
プを接着する材料とセラミック材料の熱伝導度、構造等
によって決ってくる。As explained above, the dissipation of heat generated from the chip is determined by the thermal conductivity, structure, etc. of the material to which the chip is bonded and the ceramic material.
本発明の導電性接着ペーストは、銀６の粉末が３０〜９
０％、低融点硝子硝子７が１０〜７０％含まれておシ、
シかも粒径は数１０μｍ以下の大きさに粉砕しであるの
で銀６の粒子同志の接触が密でチップとセラミック材料
間にあたかも金属板を敷いたかの如く熱の拡散移動が速
かに行われる。The conductive adhesive paste of the present invention contains 30 to 9 silver 6 powder.
0%, low melting point glass 7 contains 10-70%,
Moreover, since the particle size is crushed to a size of several tens of micrometers or less, the contact between the silver 6 particles is close, and heat is quickly diffused and transferred as if a metal plate was placed between the chip and the ceramic material. .
又チップのセラミックへの接着性は、接焉ペーストに含
まれる１０〜７０％の低融点硝子７によりてチップ８を
セラミックｌに強固に接着している。Regarding the adhesion of the chip to the ceramic, the chip 8 is firmly adhered to the ceramic 1 by the 10 to 70% low melting point glass 7 contained in the bonding paste.
この接着強度は、熱衝濃、温度サイクル、機械衝撃に充
分耐え得るものである。更にこの導電性接着ペーストの
有オリな点は、チップのダイボンド作業においてスクラ
ブが不要となる為にパッケージキャビティに対して小さ
いグ゛ツブがらギリキリの大きいチップまでグイボンド
可能であると共にキャビティに対してチップの位［精度
が向上するものである。This adhesive strength is sufficient to withstand thermal stress, temperature cycles, and mechanical shock. Furthermore, the advantage of this conductive adhesive paste is that it eliminates the need for scrubbing during die bonding of chips, so it is possible to firmly bond even small chips to large chips to the package cavity. [Accuracy is improved.
第１図は本発明実施例説明の為の本発明による導電性接
着ペーストを使用したチップの接着構造の断面図を示す
ものである。
第２図は従来の材料を使用した接着構造の断面図を示す
ものである。
１・・・・・・セラミック、２・・・・・・ダンゲステ
ン又はモリブテンメタライズ、３・・・・・・チップ、
４・・・・・・金−シリコン、５・・・・・・導電性接
着ペースト、６・・・・・・銀粉末、７・・・・・・低
融点硝子。
′：１．“パ飄
代理人 弁理士 内 原 晋 ；０９．・：牟２
凹FIG. 1 is a sectional view of a chip bonding structure using a conductive adhesive paste according to the present invention for explaining an embodiment of the present invention. FIG. 2 shows a cross-sectional view of an adhesive structure using conventional materials. 1...Ceramic, 2...Dungesten or molybdenum metallization, 3...Chip,
4... Gold-silicon, 5... Conductive adhesive paste, 6... Silver powder, 7... Low melting point glass. ':1. “Patent Attorney Susumu Uchihara ;09.・：Mu2
Concave
Claims (1)
と有機溶媒から構成され、それぞれの構成材料と組成比
が、銀粉末が３０〜９０％とＰｂＯ−Ｂ＿２Ｏ＿３−Ｓ
ｉＯ＿２−Ａｌ＿２Ｏ＿２系硝子が１０〜７０％の割合
であり、前記混合粉末と酢酸ジエチレングリコール系エ
ーテルを任意の量添加されており４５０℃以下の温度で
接着を可能とした事を特徴とする導電性接着ペースト。The conductive adhesive paste is composed of metal powder, low melting point glass, and organic solvent, and the respective constituent materials and composition ratios are 30 to 90% silver powder and PbO-B_2O_3-S.
A conductive adhesive characterized in that the ratio of iO_2-Al_2O_2 glass is 10 to 70%, the mixed powder and acetic acid diethylene glycol ether are added in an arbitrary amount, and the adhesive can be bonded at a temperature of 450°C or lower. paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1627186A JPS62176003A (en) | 1986-01-27 | 1986-01-27 | Conductive adhesive paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1627186A JPS62176003A (en) | 1986-01-27 | 1986-01-27 | Conductive adhesive paste |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62176003A true JPS62176003A (en) | 1987-08-01 |
| JPH0568801B2 JPH0568801B2 (en) | 1993-09-29 |
Family
ID=11911879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1627186A Granted JPS62176003A (en) | 1986-01-27 | 1986-01-27 | Conductive adhesive paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62176003A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04269403A (en) * | 1991-02-25 | 1992-09-25 | Nec Kagoshima Ltd | Conductive paste |
| WO2006062208A1 (en) * | 2004-12-09 | 2006-06-15 | Asahi Co., Ltd | Method of repairing molding die, heat-resistant inorganic adhesive, molding die, and molded article |
| JP4726803B2 (en) * | 2004-12-09 | 2011-07-20 | 株式会社 旭 | Mold repair method, mold and molded product |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57143203A (en) * | 1981-02-27 | 1982-09-04 | Taiyo Yuden Kk | Conductive paste for forming conductive layer by baking on porcelain |
-
1986
- 1986-01-27 JP JP1627186A patent/JPS62176003A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57143203A (en) * | 1981-02-27 | 1982-09-04 | Taiyo Yuden Kk | Conductive paste for forming conductive layer by baking on porcelain |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04269403A (en) * | 1991-02-25 | 1992-09-25 | Nec Kagoshima Ltd | Conductive paste |
| WO2006062208A1 (en) * | 2004-12-09 | 2006-06-15 | Asahi Co., Ltd | Method of repairing molding die, heat-resistant inorganic adhesive, molding die, and molded article |
| JP4726803B2 (en) * | 2004-12-09 | 2011-07-20 | 株式会社 旭 | Mold repair method, mold and molded product |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0568801B2 (en) | 1993-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4459166A (en) | Method of bonding an electronic device to a ceramic substrate | |
| US4401767A (en) | Silver-filled glass | |
| US4436785A (en) | Silver-filled glass | |
| JPS6254206B2 (en) | ||
| JPS6232695A (en) | Ceramics circuit board | |
| JPH04152642A (en) | Paste for adhesion use | |
| JPS5873904A (en) | Silver-filled glass | |
| JP3336240B2 (en) | Semiconductor element mounting board | |
| JPS61248302A (en) | Metalization base for silica carbide sintered body | |
| WO1983000949A1 (en) | Improved glass bonding means and method | |
| JPS62176003A (en) | Conductive adhesive paste | |
| US4515898A (en) | Glass bonding means and method | |
| US4963187A (en) | Metallizing paste for circuit board having low thermal expansion coefficient | |
| US4800421A (en) | Glass bonding means and method | |
| GB2103250A (en) | Silver-filled glass | |
| JPS6280907A (en) | Conductive paste | |
| JP2783577B2 (en) | Brazing filler metal paste for metal-ceramics and electronic components | |
| JPH01159908A (en) | Thermosetting silver paste composition with excellent heat resistance | |
| JPH0430122B2 (en) | ||
| JPH0368483B2 (en) | ||
| JP2572570B2 (en) | Pinless package mounting method | |
| JP2823596B2 (en) | Method for manufacturing semiconductor device | |
| JPS63193972A (en) | Electrically conductive paste | |
| JP3134234B2 (en) | Metallized substrate and manufacturing method thereof | |
| JP2996548B2 (en) | Heat dissipation composite board |