JPS62193280A - シヨツトキ−バリアダイオ−ド - Google Patents

シヨツトキ−バリアダイオ−ド

Info

Publication number
JPS62193280A
JPS62193280A JP3565486A JP3565486A JPS62193280A JP S62193280 A JPS62193280 A JP S62193280A JP 3565486 A JP3565486 A JP 3565486A JP 3565486 A JP3565486 A JP 3565486A JP S62193280 A JPS62193280 A JP S62193280A
Authority
JP
Japan
Prior art keywords
barrier
barrier metal
schottky barrier
barrier diode
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3565486A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0581067B2 (enExample
Inventor
Hidefumi Hatagoshi
波多腰　英文
Ryohei Shinohara
良平 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP3565486A priority Critical patent/JPS62193280A/ja
Publication of JPS62193280A publication Critical patent/JPS62193280A/ja
Publication of JPH0581067B2 publication Critical patent/JPH0581067B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP3565486A 1986-02-20 1986-02-20 シヨツトキ−バリアダイオ−ド Granted JPS62193280A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3565486A JPS62193280A (ja) 1986-02-20 1986-02-20 シヨツトキ−バリアダイオ−ド

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3565486A JPS62193280A (ja) 1986-02-20 1986-02-20 シヨツトキ−バリアダイオ−ド

Publications (2)

Publication Number Publication Date
JPS62193280A true JPS62193280A (ja) 1987-08-25
JPH0581067B2 JPH0581067B2 (enExample) 1993-11-11

Family

ID=12447863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3565486A Granted JPS62193280A (ja) 1986-02-20 1986-02-20 シヨツトキ−バリアダイオ−ド

Country Status (1)

Country Link
JP (1) JPS62193280A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100335701B1 (ko) * 1996-12-03 2002-05-08 가와사키 마사히로 막형상 복합구조체 및 그 제조방법
US9577044B2 (en) 2014-03-10 2017-02-21 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device with first and second electrodes forming schottky junction with silicon carbide semiconductor layer and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662376A (en) * 1979-10-26 1981-05-28 Hitachi Ltd Schottky diode

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662376A (en) * 1979-10-26 1981-05-28 Hitachi Ltd Schottky diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100335701B1 (ko) * 1996-12-03 2002-05-08 가와사키 마사히로 막형상 복합구조체 및 그 제조방법
US6452244B1 (en) 1996-12-03 2002-09-17 Japan Science And Technology Corporation Film-like composite structure and method of manufacture thereof
US9577044B2 (en) 2014-03-10 2017-02-21 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device with first and second electrodes forming schottky junction with silicon carbide semiconductor layer and method of manufacturing the same

Also Published As

Publication number Publication date
JPH0581067B2 (enExample) 1993-11-11

Similar Documents

Publication Publication Date Title
US6387736B1 (en) Method and structure for bonding layers in a semiconductor device
US4425379A (en) Polycrystalline silicon Schottky diode array
JPH05343405A (ja) 半導体装置
JPH02130959A (ja) 半導体装置
EP0057135B1 (en) Low resistance schottky diode on polysilicon/metal-silicide
US3706128A (en) Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor
JPH08116072A (ja) ショットキーバリア半導体装置
JPS62193280A (ja) シヨツトキ−バリアダイオ−ド
US3579278A (en) Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor
JPH0580157B2 (enExample)
JPS5873136A (ja) 半導体デバイスの製造方法
KR900001247B1 (ko) 반도체 장치
JPS61140133A (ja) 半導体装置の製造方法
JPS5842631B2 (ja) 接合ゲ−ト型電界効果トランジスタの製造方法
JPS5812372A (ja) 半導体装置の製造方法
JPH03276762A (ja) ショットキバリア半導体装置
JPS5984468A (ja) 半導体装置
JPS6126267A (ja) 双方向性ツエナ−ダイオ−ド
JPH05198789A (ja) 半導体装置の製造方法
JPS5963719A (ja) 半導体装置
JPH0515312B2 (enExample)
JPS5935188B2 (ja) シヨツトキバリア・ダイオ−ドの製法
JPH07302918A (ja) 半導体装置
JPS59101868A (ja) シヨツトキ−障壁と低抵抗接触とを有する半導体装置及びその製造方法
JPS6193647A (ja) 半導体装置