JPS62192445A - Epoxy resin molding material for sealing - Google Patents
Epoxy resin molding material for sealingInfo
- Publication number
- JPS62192445A JPS62192445A JP3443786A JP3443786A JPS62192445A JP S62192445 A JPS62192445 A JP S62192445A JP 3443786 A JP3443786 A JP 3443786A JP 3443786 A JP3443786 A JP 3443786A JP S62192445 A JPS62192445 A JP S62192445A
- Authority
- JP
- Japan
- Prior art keywords
- silicone resin
- molding material
- sealing
- epoxy resin
- epoxy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 18
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 18
- 238000007789 sealing Methods 0.000 title claims abstract description 11
- 239000012778 molding material Substances 0.000 title claims abstract description 10
- 229920002050 silicone resin Polymers 0.000 claims abstract description 16
- 239000000843 powder Substances 0.000 claims abstract description 11
- 125000000524 functional group Chemical group 0.000 claims abstract description 4
- 239000004593 Epoxy Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 125000000217 alkyl group Chemical group 0.000 abstract description 2
- 125000003277 amino group Chemical group 0.000 abstract description 2
- 125000003700 epoxy group Chemical group 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract description 2
- 230000035882 stress Effects 0.000 description 12
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- -1 glycidyl ester Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は半導体を封止するエポキＶ樹脂改形材料に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to modified epoxy V resin materials for encapsulating semiconductors.
近年、￥！気、電子機器の部品の低コスト化と生産性向
上のため、プラスチックによる封止がなされるようにな
ってきた。これらの電電部品や電子部品には例えばトラ
ンジスタ、ダイオード、コンデンサー、フィルター、整
流器、抵抗体、コイル、ＩＣ１ＬＳＣ，５ＬＳＩ等があ
シ近年の半導体素子の高機能化に伴う素子サイズの大型
化傾向で従来問題にならなかった封止成形時の素子上へ
の応力、ハンダ処理等の実装工程における熱応力の問題
が半導体の信頼性に重要な影響をもつようになってきた
。In recent years, ¥! In order to lower the cost and improve productivity of parts of electronic devices, plastic sealing has begun to be used. These electric and electronic parts include transistors, diodes, capacitors, filters, rectifiers, resistors, coils, IC1LSC, 5LSI, etc.In recent years, the trend of increasing element size due to the higher functionality of semiconductor elements Problems such as stress on elements during sealing molding and thermal stress during mounting processes such as soldering, which had not been a problem, have now started to have an important effect on the reliability of semiconductors.
最近の半導体デバイスの動向を見ると、パッケージはＳ
ＯＰ、 ＦＰに代表されるように小型、ＷＩ型化の傾向
にある。またチップの動向としてはメモリーに代表され
るように高機能化、高集積化の方向にある。Looking at recent trends in semiconductor devices, packages are
There is a trend toward smaller, WI-type products, as exemplified by OP and FP. Furthermore, the trend in chips is toward higher functionality and higher integration, as typified by memory.
上記のようなデバイスの開発動向に対し、最近特に封止
材に要求される項目に低応力の付与があげられる。すな
わち、セー〃ド後の熱応力さらにはハンダ処理後の耐湿
性向上、と−トサイクル性の向上など従来よりよりハイ
レベ〜の低応力を封止材に付与しないとバッシベーシッ
ン割れ、チップ割れ、樹脂割れ、アルミスライドなど応
力が原因で信頼性が極端に低下する問題がある。In response to the above-mentioned device development trends, low stress has recently been particularly required of encapsulants. In other words, if we do not apply a higher level of stress to the encapsulant than before, such as thermal stress after soldering, improved moisture resistance after soldering, and improved thermal cycling properties, it will cause bass cracks, chip cracks, and resin. There are problems with extremely low reliability due to stress such as cracks and aluminum slides.
従来の方向で低応力をａｒｙ、シようとすると、−般的
に低応力を付与するためある種の可塑性付与剤を添加し
て低応力化を達成しようとすると総膨張のアップでドー
タμ的にはそれほど応力が低下せずに耐温性が低下する
問題がある。また、パリの発生など成形性が低下すると
いう問題もある。If you try to reduce stress in the conventional direction, - Generally speaking, if you try to achieve low stress by adding some kind of plasticizer to give low stress, the total expansion will increase and the daughter μ will increase. However, there is a problem in that the temperature resistance decreases without significantly reducing the stress. There is also the problem that moldability is reduced, such as the occurrence of flakes.
本発明の目的とするところは、低応力性に優れた封止用
エポキシ樹脂成形材料を提共することにある。An object of the present invention is to provide an epoxy resin molding material for sealing that has excellent low stress properties.
本発明はシリコン樹脂粉末を含有してなることを特徴と
する封止用エポキシ樹脂成形材料であるため、低応力性
を向上させることができたもので、以下本発明の詳細な
説明する。Since the present invention is an epoxy resin molding material for sealing characterized by containing silicone resin powder, it is possible to improve low stress properties.The present invention will be described in detail below.
本発明に使用するシリコン樹脂粉末は最大粒径として１
００ミクロン以下好ましくはωミクロン以下が好ましい
。すなわち１００ミクロンを越えると分散性が低下する
ばかりでなく、シリカとの相互作用、樹脂との相互作用
のバランスがくずれ、十分な低応力を付与出来ない。更
にシリコン樹脂粉末の添加に際しては他のシリコンオイ
ルを添加することが好ましい。シリコン樹脂粉末の表面
は完全防水化されているため、表面構造からエポキシ樹
脂、フェノール樹脂、さらにはシリカ粉とのなじみすな
わち親和性が悪い。そのため界面浮き出しによるリード
密着力の低下が見られるためである。又、シリコン樹脂
は末端官能基を有するシリコン樹脂で、アルキル基、エ
ポキシ基、アミノ基等の少くとも１つの官能基を有する
ものであることが望ましい。シリコン樹脂の添加量は、
全体量の１〜５０重量％（以下単に％と記す）であるこ
とが好ましい。即ち１％未満では低応力化し難く、ω％
をこえると成形性が低下する傾向にあるからである。エ
ポキシ樹脂としてはビスフェノ−ｐＡ型エポキシ樹脂、
ノボラック型エポキシ樹脂、可撓性エポキシ樹脂、ハロ
ゲン化エポキシ樹脂、グリシジルエステ〃型エポキシ樹
脂、高分子型エポキシ樹脂等のエポキシ樹脂に、アミン
系硬化剤、脂肪族ポリアミン、ポリアミド樹脂、芳香族
ジアミン、酸無水物硬化剤、〜イス酸錯化合物、フェノ
−／Ｌ’樹脂、イソシアネート樹脂等の硬化剤や架橋剤
やイミダゾ−μ、イミダシリン、有機フォスフイン化合
物、三級アミン等の硬化促進剤を加え、更に充填剤、離
型剤、界面活性剤等の添加剤を加えたものである。なお
ｙｙコン樹脂の添加方法は好ましくは使用する樹脂と予
じめ加熱溶融させたものを用いることが分散性の点でよ
く望ましいことである。更に成形については、トランス
ファー成形、射出成形等によるトランジスタ、ダイオー
ド、コンデンサー、フィルター、整流器、抵抗体、コイ
ル、ＩＣ，ＬＳＩ、ＶＬＳＩＬＳＩ等ノミノ多数個取シ
成形に適することは勿論、圧縮成形にも適用できるもの
である。以下本発明を実施例にもとすいて詳細に説明す
る。The silicone resin powder used in the present invention has a maximum particle size of 1
00 microns or less, preferably ω microns or less. That is, if it exceeds 100 microns, not only will the dispersibility deteriorate, but the balance between interaction with silica and interaction with resin will be disrupted, making it impossible to impart sufficiently low stress. Furthermore, when adding the silicone resin powder, it is preferable to add another silicone oil. Since the surface of silicone resin powder is completely waterproof, it has poor compatibility with epoxy resins, phenolic resins, and even silica powder due to its surface structure. This is because lead adhesion strength is reduced due to interface protrusion. Further, the silicone resin is a silicone resin having a terminal functional group, and preferably has at least one functional group such as an alkyl group, an epoxy group, or an amino group. The amount of silicone resin added is
It is preferably 1 to 50% by weight (hereinafter simply referred to as %) of the total amount. In other words, if it is less than 1%, it is difficult to reduce the stress, and ω%
This is because moldability tends to decrease when the amount exceeds this value. As the epoxy resin, bispheno-pA type epoxy resin,
In addition to epoxy resins such as novolac type epoxy resins, flexible epoxy resins, halogenated epoxy resins, glycidyl ester type epoxy resins, and polymer type epoxy resins, amine hardeners, aliphatic polyamines, polyamide resins, aromatic diamines, Add curing agents and crosslinking agents such as acid anhydride curing agents, isoic acid complex compounds, pheno-/L' resins, and isocyanate resins, and curing accelerators such as imidazo-μ, imidacillin, organic phosphine compounds, and tertiary amines, Furthermore, additives such as fillers, mold release agents, and surfactants are added. As for the method of adding the yycon resin, it is preferable to use a resin that has been heated and melted in advance with the resin used, from the viewpoint of dispersibility. Furthermore, regarding molding, it is suitable for multi-cavity molding of transistors, diodes, capacitors, filters, rectifiers, resistors, coils, ICs, LSIs, VLSILSIs, etc. by transfer molding, injection molding, etc., as well as compression molding. It is possible. The present invention will be explained in detail below using examples.
実施例１及び２と比較例
第１表の配合表に従って材料を配合、混合、混練して半
導体封止用エポキシ樹脂成形材料を得、トランスファー
成形機を用いて金型温度１７５°Ｃ１成型圧力５０輪、
硬化時間３分の巣作でトランジスタを封止成形して電子
部品を得た。The materials were blended, mixed and kneaded according to the formulation table of Examples 1 and 2 and Comparative Example Table 1 to obtain an epoxy resin molding material for semiconductor encapsulation, and the mold temperature was 175°C and the molding pressure was 50 using a transfer molding machine. ring,
A transistor was sealed and molded with a curing time of 3 minutes to obtain an electronic component.
第 １ 表
〔発明の効果〕
実施例１及び２と比較例の成形品を試験した結果は第２
表で明白なように本発明の封止用エポキシ樹脂成形材料
から得られた成形品の性能はよく本発明による封止用エ
ポキシｔ＃脂成形材料の優れていることを確認した。Table 1 [Effects of the invention] The results of testing the molded products of Examples 1 and 2 and comparative examples are shown in Table 2.
As is clear from the table, the performance of the molded products obtained from the epoxy resin molding material for sealing of the present invention was good, confirming the superiority of the epoxy T# resin molding material for sealing according to the present invention.
第 ２ 表
注
牽（（−５５’ＣＸ ３ｏ分］処理後、（１５０°ＱＸ
３０分）処理〕を１サイクμとして２０００サイクル処
理後のクラック発生数をみる。Table 2 Note: After treatment ((-55'CX 3o min), (150°QX
The number of cracks generated after 2000 cycles of treatment is determined by setting 1 cycle μ of 30 minutes) treatment.
Claims (2)
止用エポキシ樹脂成形材料。(1) An epoxy resin molding material for sealing characterized by containing silicone resin powder.
樹脂で、全体量に対し１〜５０重量％添加することを特
徴とする特許請求の範囲第１項記載の封止用エポキシ樹
脂成形材料。(2) The epoxy resin molding material for sealing according to claim 1, wherein the silicone resin powder is a silicone resin having a terminal functional group and is added in an amount of 1 to 50% by weight based on the total amount.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3443786A JPS62192445A (en) | 1986-02-18 | 1986-02-18 | Epoxy resin molding material for sealing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3443786A JPS62192445A (en) | 1986-02-18 | 1986-02-18 | Epoxy resin molding material for sealing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62192445A true JPS62192445A (en) | 1987-08-24 |
Family
ID=12414201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3443786A Pending JPS62192445A (en) | 1986-02-18 | 1986-02-18 | Epoxy resin molding material for sealing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62192445A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0193155A (en) * | 1987-10-05 | 1989-04-12 | Sumitomo Bakelite Co Ltd | Resin-sealed semiconductor device |
| JPH02173155A (en) * | 1988-12-27 | 1990-07-04 | Toray Ind Inc | Epoxy-containing composition |
| JPH04338613A (en) * | 1991-05-15 | 1992-11-25 | Murata Mfg Co Ltd | Magnetic shielding resin |
| JP2010118574A (en) * | 2008-11-14 | 2010-05-27 | Denso Corp | Reactor, and method of manufacturing the same |
-
1986
- 1986-02-18 JP JP3443786A patent/JPS62192445A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0193155A (en) * | 1987-10-05 | 1989-04-12 | Sumitomo Bakelite Co Ltd | Resin-sealed semiconductor device |
| JPH02173155A (en) * | 1988-12-27 | 1990-07-04 | Toray Ind Inc | Epoxy-containing composition |
| JPH04338613A (en) * | 1991-05-15 | 1992-11-25 | Murata Mfg Co Ltd | Magnetic shielding resin |
| JP2010118574A (en) * | 2008-11-14 | 2010-05-27 | Denso Corp | Reactor, and method of manufacturing the same |
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