JPS61133223A - Epoxy resin molding material for semiconductor sealing - Google Patents
Epoxy resin molding material for semiconductor sealingInfo
- Publication number
- JPS61133223A JPS61133223A JP25547184A JP25547184A JPS61133223A JP S61133223 A JPS61133223 A JP S61133223A JP 25547184 A JP25547184 A JP 25547184A JP 25547184 A JP25547184 A JP 25547184A JP S61133223 A JPS61133223 A JP S61133223A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- molding material
- resin molding
- modified silicone
- curing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は半導体を封止するエポキシ樹脂成形材料に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an epoxy resin molding material for encapsulating a semiconductor.
近年、半導体素子の発達は目ざましいものがあり、特に
メモリーを中心とする分野では高機能化に伴う素子サイ
ズの大型化傾向の中で耐湿性の低下、更に従来問題にな
らなかった封止した際の素子上への応力、更には半田処
理等の実装工程における熱応力の問題が半導体の信M性
に重大な影響を持つようになった。又、近年種々の新硬
化促進剤の開発によって耐湿性は従来より向上すること
が判明し、硬化助剤の寄与については今後見に研究が進
められる状勢であるが、種々の硬化助剤については薄パ
リ発生の問題があった。薄パリ発生は成形作業性を低下
させるだけでなく半導体素子の信頼性も低下する。。一
般的な方法ではシリカ等の充填剤の粒度分布、樹脂分子
量分布の調整くより薄パリを止める方法があるが充分で
なく又、硬化速度によっても変化するため完全な方法と
は云えなかった。In recent years, the development of semiconductor devices has been remarkable.Especially in the field of memory, the trend toward larger device sizes due to higher functionality has led to a decline in moisture resistance, and problems with sealing, which had not been a problem in the past. The problems of stress on the elements, and furthermore, thermal stress during the mounting process such as soldering have come to have a serious impact on the reliability of semiconductors. In recent years, it has been found that the development of various new curing accelerators has improved moisture resistance compared to conventional ones, and research on the contribution of curing aids will continue in the future. There was a problem with the occurrence of light flakes. The occurrence of thin flakes not only reduces molding workability but also reduces the reliability of semiconductor devices. . Conventional methods include adjusting the particle size distribution of fillers such as silica and the molecular weight distribution of resins to prevent thin flakes, but these methods are not sufficient and also vary depending on the curing speed, so it cannot be said to be a perfect method.
本発明の目的は成形性がよく且つ耐湿性、低応力の半導
体封止用エポキシ樹脂成形材料を提供することにある。An object of the present invention is to provide an epoxy resin molding material for semiconductor encapsulation that has good moldability, moisture resistance, and low stress.
本発明はエポキシ樹脂100重量部(以下単に部と記す
)に対し変性シリコン化合物2〜艶部を含有せしめたこ
とを特徴とする半導体封止用エボキシ樹脂成形材料で以
下本発明の詳細な説明する。The present invention relates to an epoxy resin molding material for semiconductor encapsulation, which is characterized in that 100 parts by weight (hereinafter simply referred to as "parts") of an epoxy resin contains 2 to 2 to 10 parts of a modified silicone compound, and the present invention will be described in detail below. .
本発明に用いる変性シリコン化合物はエポキシ変性シリ
コン中間体、アミノ変性シリコン中間体、力〃ボン酸変
性シリコン中間体、水酸基変性シリコン中間体、ポリエ
ーテル変性シリコン中t’ll、グリコ−!変性シリコ
ン中間体等の変性シリコン化合物全般を用いるもので特
に限定するものではないが好ましくはアミノ当量500
〜3000の7ミノシリコン中間体を用いることが全体
バランスのうえで望ましいことである。変性シリコン化
合物の量はエポキシ樹脂100部に対し2〜お部である
こと空必要である。即ち2部未満では成形時の薄パリ防
止効果がなく、且つ耐湿性が向上せず田部をこえても低
応力、耐湿性の向上が同一であるためである。本発明に
用いるエポキシ樹脂はビスフェノ−A/A型エポキシ樹
脂、ノボラック型エポキシ樹脂、可撓性エポキシ樹脂、
ハロゲン化エポキシ樹脂、グリシジルエステ/L/型エ
ポキシ樹脂、高分子型エポキシ樹脂等のエポキシ樹脂に
、アミン系硬化剤、脂肪族ポリアミン、ポリアミド樹脂
、芳香族ジアミン、酸無水物硬化剤、ルイス酸錯化合物
、フェノール樹脂、イソシアネート樹脂等の硬化剤や架
橋剤やイミダゾール、イミダシリン、有襲フォスフイン
化合物等の硬化促進剤を加え、更に充填剤、離型剤、界
面活性剤等の添加剤を加えたものである。なお変性シリ
コン化合物の添加方法は特に限定するものではないが好
ましくは樹脂中或は硬化剤、硬化促進剤中に変性シリコ
ン化合−物を予じめ分散させてから用いることが望まし
い。更に該成形材料の成形については、トランスファー
成形、射出成形等〈よるトランジスタ、ダイオード、コ
ンデンサー、フィμター、整流器、抵抗体、コイμ、I
C、LSI 、 5LSI等の電子部品の多数個取り成
形に適することは勿論、注型、圧縮成形にも適用できる
ものである。以下本発明を実施例にもとすいて詳細に説
明する。The modified silicone compounds used in the present invention include epoxy-modified silicone intermediates, amino-modified silicone intermediates, acid-modified silicone intermediates, hydroxyl-modified silicone intermediates, polyether-modified silicone intermediates, glyco-! It uses modified silicon compounds in general such as modified silicon intermediates, and is not particularly limited, but preferably has an amino equivalent of 500.
From the viewpoint of overall balance, it is desirable to use a 7-minosilicon intermediate of ~3000. The amount of the modified silicone compound must be 2 to 10 parts per 100 parts of the epoxy resin. That is, if the amount is less than 2 parts, there is no effect of preventing thin flakes during molding, and moisture resistance is not improved, and even if the amount exceeds the level, low stress and improvement in moisture resistance are the same. The epoxy resins used in the present invention include bispheno-A/A type epoxy resin, novolac type epoxy resin, flexible epoxy resin,
For epoxy resins such as halogenated epoxy resins, glycidyl ester/L/type epoxy resins, and polymeric epoxy resins, amine curing agents, aliphatic polyamines, polyamide resins, aromatic diamines, acid anhydride curing agents, Lewis acid complexes, etc. Compounds, curing agents such as phenolic resins, isocyanate resins, crosslinking agents, curing accelerators such as imidazole, imidacillin, attack phosphine compounds, etc. are added, and additives such as fillers, mold release agents, surfactants, etc. are added. It is. The method of adding the modified silicone compound is not particularly limited, but it is preferable to disperse the modified silicone compound in advance in the resin, curing agent, or curing accelerator before use. Furthermore, regarding the molding of the molding material, transfer molding, injection molding, etc.
Not only is it suitable for multi-cavity molding of electronic components such as C, LSI, and 5LSI, but it can also be applied to casting and compression molding. The present invention will be described in detail below using examples.
実施例1乃至3と従来例1及び2
第1表の配合表に従って材料を配合、混合、混線しで半
導体封史用エポキシ樹脂成形材料を得、トランスファー
成形機を用いて金型温度175“C1成型圧力50−1
硬化時間3分の条件でトランジスタを封止成形して電子
部品を得た。Examples 1 to 3 and Conventional Examples 1 and 2 An epoxy resin molding material for semiconductor encapsulation was obtained by blending, mixing, and mixing the materials according to the recipe in Table 1, and was molded at a mold temperature of 175"C1 using a transfer molding machine. Molding pressure 50-1
A transistor was sealed and molded under conditions of a curing time of 3 minutes to obtain an electronic component.
第1表
部
〔発明の効果〕
実施例1乃至3と従来例1及び2の成形品を試険した結
果は第2表で明白なように本発明の半導体封止用エポキ
シ樹脂成形材料から得られた成形品は成形性がよく、寄
耐湿性且つ低応カ品であり本発明による半導体封止用エ
ポキシ樹脂成形材料の優れていることを確認した。Table 1 [Effects of the Invention] As is clear from Table 2, the results of testing the molded products of Examples 1 to 3 and Conventional Examples 1 and 2 show that the epoxy resin molding material for semiconductor encapsulation of the present invention can be used. The obtained molded product had good moldability, moisture resistance, and low stress, confirming the superiority of the epoxy resin molding material for semiconductor encapsulation according to the present invention.
第 2 表 注Table 2 note
Claims (2)
合物2〜30重量部を含有せしめたことを特徴とする半
導体封止用エポキシ樹脂成形材料。(1) An epoxy resin molding material for semiconductor encapsulation, characterized in that it contains 2 to 30 parts by weight of a modified silicone compound per 100 parts by weight of epoxy resin.
ることを特徴とする特許請求の範囲第1項記載の半導体
封止用エポキシ樹脂成形材料。(2) The epoxy resin molding material for semiconductor encapsulation according to claim 1, wherein the modified silicone compound is an aminosilicon intermediate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25547184A JPS61133223A (en) | 1984-12-03 | 1984-12-03 | Epoxy resin molding material for semiconductor sealing |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25547184A JPS61133223A (en) | 1984-12-03 | 1984-12-03 | Epoxy resin molding material for semiconductor sealing |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS61133223A true JPS61133223A (en) | 1986-06-20 |
Family
ID=17279223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25547184A Pending JPS61133223A (en) | 1984-12-03 | 1984-12-03 | Epoxy resin molding material for semiconductor sealing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61133223A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63114243A (en) * | 1986-10-31 | 1988-05-19 | Nitto Electric Ind Co Ltd | Semiconductor device |
JPS63236305A (en) * | 1987-03-25 | 1988-10-03 | Matsushita Electric Ind Co Ltd | Epoxy resin molding material for sealing coil element |
JPS63275624A (en) * | 1987-05-08 | 1988-11-14 | Hitachi Ltd | Epoxy resin composition for semiconductor sealing and resin-sealed semiconductor device |
JPH01203423A (en) * | 1988-02-08 | 1989-08-16 | Matsushita Electric Works Ltd | Epoxy resin molding material |
JPH01215820A (en) * | 1988-02-24 | 1989-08-29 | Hitachi Ltd | Epoxy resin composition for semiconductor sealing and resin-sealed semiconductor device |
JPH02173155A (en) * | 1988-12-27 | 1990-07-04 | Toray Ind Inc | Epoxy-containing composition |
JPH02189357A (en) * | 1989-01-19 | 1990-07-25 | Matsushita Electric Works Ltd | Epoxy resin molding material for semiconductor sealing |
JPH0379657A (en) * | 1989-08-23 | 1991-04-04 | Matsushita Electric Works Ltd | Preparation of epoxy resin composition |
JPH0381360A (en) * | 1989-08-23 | 1991-04-05 | Matsushita Electric Works Ltd | Preparation of epoxy resin composition |
-
1984
- 1984-12-03 JP JP25547184A patent/JPS61133223A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63114243A (en) * | 1986-10-31 | 1988-05-19 | Nitto Electric Ind Co Ltd | Semiconductor device |
JPS63236305A (en) * | 1987-03-25 | 1988-10-03 | Matsushita Electric Ind Co Ltd | Epoxy resin molding material for sealing coil element |
JPS63275624A (en) * | 1987-05-08 | 1988-11-14 | Hitachi Ltd | Epoxy resin composition for semiconductor sealing and resin-sealed semiconductor device |
JPH01203423A (en) * | 1988-02-08 | 1989-08-16 | Matsushita Electric Works Ltd | Epoxy resin molding material |
JPH01215820A (en) * | 1988-02-24 | 1989-08-29 | Hitachi Ltd | Epoxy resin composition for semiconductor sealing and resin-sealed semiconductor device |
JPH02173155A (en) * | 1988-12-27 | 1990-07-04 | Toray Ind Inc | Epoxy-containing composition |
JPH02189357A (en) * | 1989-01-19 | 1990-07-25 | Matsushita Electric Works Ltd | Epoxy resin molding material for semiconductor sealing |
JPH0379657A (en) * | 1989-08-23 | 1991-04-04 | Matsushita Electric Works Ltd | Preparation of epoxy resin composition |
JPH0381360A (en) * | 1989-08-23 | 1991-04-05 | Matsushita Electric Works Ltd | Preparation of epoxy resin composition |
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