JPS62185390A - Semiconductor laser diode - Google Patents
Semiconductor laser diodeInfo
- Publication number
- JPS62185390A JPS62185390A JP2860286A JP2860286A JPS62185390A JP S62185390 A JPS62185390 A JP S62185390A JP 2860286 A JP2860286 A JP 2860286A JP 2860286 A JP2860286 A JP 2860286A JP S62185390 A JPS62185390 A JP S62185390A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- semiconductor laser
- laser diode
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 230000010355 oscillation Effects 0.000 claims abstract description 7
- 238000005253 cladding Methods 0.000 claims description 15
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract 2
- 239000002184 metal Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体レーザダイオードに関し、特に高速変調
用半導体レーザダイオードに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser diode, and particularly to a semiconductor laser diode for high-speed modulation.
ｌｉｔ来、この種の半導体レーザダイオードは第２［２
１に示す埋込み型半導体レーザダイオードのように、活
性層をエピタキシャル成長した後、エツチングによりメ
サを形成し、その後、エピタキシャル成長により活性層
とＰＮＰＮ構造となる電流ブロックのための埋込み層よ
り構成されており、ペレット平面は平らなプレーナ構造
となっている。Since then, this type of semiconductor laser diode has been
As in the buried semiconductor laser diode shown in 1, the active layer is epitaxially grown, a mesa is formed by etching, and then the active layer and a buried layer for a current block are formed into a PNPN structure by epitaxial growth. The pellet plane has a flat planar structure.
なお、従来例の第２図において、１１は金属電極、１２
はｐ型キャップ層、１３はｐ型埋込層、１４はｎ型ブロ
ツク層、１５はｐ型クラッド層、１６は１）型クラッド
層、１７は活性層、１８はｎ型クラッド層、１９は口型
基板、２０は金属電極である。In addition, in FIG. 2 of the conventional example, 11 is a metal electrode, and 12 is a metal electrode.
13 is a p-type cap layer, 13 is a p-type buried layer, 14 is an n-type block layer, 15 is a p-type cladding layer, 16 is a 1) type cladding layer, 17 is an active layer, 18 is an n-type cladding layer, 19 is a The mouth-shaped substrate 20 is a metal electrode.
上述した従来の第２図の様な半導体レーザダイオードの
構造はブロック層１４を設けて活性層１７以外に流れる
電流を阻止して活性層１７に電流を環中させやずくして
いる。また、横モード制御性を良くするために、活性領
域幅を１〜２μｒｎ程度に形成している。実効的にレー
ザ発振に必要な領域はこの活性領域の１〜２μｍｎであ
るがこの半導体ペレッ１〜の幅は組立ｆｔ卒業時べしツ
トのＪｌ！２扱いのために３００μｍ程度より小さくす
ることができないので光閉じ込めに寄与しないクラッド
層１５．１６．１８とブロック層１４．埋込層１３゜キ
ヤ・ツブ層１２等よりなるＰＮ接合部分の面積が広くな
り、寄生容量が非常に大きくなる４この寄生容量の影響
で、半導体レーザダイオードの高速変調特性を下げると
いう欠点がある。In the structure of the conventional semiconductor laser diode as shown in FIG. 2 described above, a blocking layer 14 is provided to block current from flowing to areas other than the active layer 17 and to allow the current to flow through the active layer 17. Further, in order to improve transverse mode controllability, the width of the active region is set to about 1 to 2 μrn. The area effectively required for laser oscillation is 1 to 2 μm of this active region, but the width of this semiconductor pellet 1~ should be Jl! The cladding layer 15, 16, 18 and the block layer 14. which do not contribute to optical confinement because they cannot be made smaller than about 300 μm due to the 2nd treatment. The area of the PN junction, which is made up of the buried layer 13 and the hollow layer 12, becomes larger, and the parasitic capacitance becomes very large.4 This parasitic capacitance has the disadvantage of lowering the high-speed modulation characteristics of the semiconductor laser diode. .
本発明の目的は、従来の欠点を除去し、寄生容量を小さ
くし高速変調特性に優れた半導体レーザダイオードを提
供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor laser diode that eliminates the conventional drawbacks, has reduced parasitic capacitance, and has excellent high-speed modulation characteristics.
〔問題点を解決するための手段Ｊ
本発明の半導体レーザダイオードは、レーザー発振動作
に必要な活性層近傍以外のクラッド層。[Means for Solving the Problems J] The semiconductor laser diode of the present invention has a cladding layer other than the vicinity of the active layer necessary for laser oscillation operation.
ブロック層、埋込層、キャップ層等よりなるＰＮ接合部
分を取除き活性領域部近傍をメサストライプ状に形成す
ることにより構成される。It is constructed by removing the PN junction portion consisting of the block layer, buried layer, cap layer, etc. and forming the vicinity of the active region in a mesa stripe shape.
次に、本発明の実施例について図面を参照して説明する
。第１図は、本発明の一実施例の斜視図である。この実
施例の構造の製造方法では、ｎ型基板９上にエピタキシ
ャル成長で、ｎ型クラッド層８．活性層７．ｐをクラッ
ド層６を順次形成し、横モード制御のために、ポトリン
グラフィ技術を用いて活性Ｉ−幅を１〜２μｍに形成し
た後に、エピタキシャル成長で１〕型ツクラッド５及び
ｎ型ブロック層４．ｐ型埋込層３．ｐ型キャップ層２を
順次形成する。次に、ストライプ状電極１を形成するた
めに、ホトリソグラフィ技術を用いて、スＩ・ライブ幅
Ｗｓを３０〜５０μｉｎに制御し、レーザ発振に対して
余分なエピタキシャル成長層をエツチングにより取除く
ことで、第２図で示す所のｐ型キャップ層１２とｐ型埋
込層１３とｎ型ブロック層１４とｎ型クラッド層１５に
発生する寄生容量を低減できる。なおｎ型クラッド層１
６及び活性層の外側部１７、及びｎ型クラッド層１８の
一部までト取除くことにより寄生容量を小さくすること
ができる。Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a perspective view of one embodiment of the present invention. In the method of manufacturing the structure of this embodiment, an n-type cladding layer 8. is epitaxially grown on an n-type substrate 9. Active layer7. After sequentially forming a p-type cladding layer 6 and forming an active I-width of 1 to 2 μm using potrinography technology for transverse mode control, a 1]-type cladding layer 5 and an n-type block layer 4 are formed by epitaxial growth. ．． p-type buried layer 3. A p-type cap layer 2 is sequentially formed. Next, in order to form the striped electrodes 1, the stripe width Ws is controlled to 30 to 50 μin using photolithography technology, and the epitaxial growth layer unnecessary for laser oscillation is removed by etching. , the parasitic capacitance generated in the p-type cap layer 12, p-type buried layer 13, n-type block layer 14, and n-type cladding layer 15 shown in FIG. 2 can be reduced. Note that n-type cladding layer 1
6, the outer part 17 of the active layer, and a part of the n-type cladding layer 18, the parasitic capacitance can be reduced.
このメサストライプに電極ｌを形成することにより、高
速変調特性の優れた半導体レーザダイオードが得られる
。By forming the electrode 1 on this mesa stripe, a semiconductor laser diode with excellent high-speed modulation characteristics can be obtained.
以上説明したように本発明は、エツチングにより、レー
ザ発振に寄与していないｐ型キャップ層。As explained above, the present invention uses a p-type cap layer that does not contribute to laser oscillation due to etching.
ｐ型埋込層、ｎ型ブロツク層、ｐ瑣りラッド層等を取除
き、ストライブ状電極１を形成しているので、寄生容量
が小さくなり、高速変調特性に優れた半導体レーザダイ
オードを提供できる効果がある。Since the striped electrode 1 is formed by removing the p-type buried layer, n-type block layer, p-rad layer, etc., the parasitic capacitance is reduced and a semiconductor laser diode with excellent high-speed modulation characteristics is provided. There is an effect that can be achieved.
なお、第２図の様な従来の半導体レーザダイオードに比
べると第１図の本発明の半導体レーザダイオードでは、
高速変調特性で約５倍程度優れた特性とすることができ
る。In addition, compared to the conventional semiconductor laser diode as shown in FIG. 2, the semiconductor laser diode of the present invention shown in FIG.
The high-speed modulation characteristics can be improved by about 5 times.
第１図は本発明の一実施例の斜視図、第２図は従来の半
導体レーザダイオードの斜視図である。
１．１１・・・金属電極、２，１２・・・ｐ型キャップ
層、３．１３・ ｐ型埋込層、４．１４・−ｎ型ブロツ
ク層、５．１５・・・ｐ型クラッド層、６．１６・・・
ｐ型クラッド層、７．１７・・・活性層、８，１８・・
・ｎ型クラッド層、９．１９・・・ｎ型基板、１０．２
０・・・金属電極、Ｗｓ・・・ストライブ幅。FIG. 1 is a perspective view of an embodiment of the present invention, and FIG. 2 is a perspective view of a conventional semiconductor laser diode. 1.11...Metal electrode, 2,12...p type cap layer, 3.13...p type buried layer, 4.14...-n type blocking layer, 5.15...p type cladding layer , 6.16...
p-type cladding layer, 7.17...active layer, 8,18...
・N-type cladding layer, 9.19...n-type substrate, 10.2
0...metal electrode, Ws...stripe width.
Claims (1)
ブロック層、埋込層、キャップ層等よりなるＰＮ接合部
分を取除き、活性領域部近傍をメサストライプ状とした
ことを特徴とする半導体レーザダイドード。Cladding layers other than the vicinity of the active layer necessary for laser oscillation operation,
A semiconductor laser diode characterized in that a PN junction portion consisting of a block layer, a buried layer, a cap layer, etc. is removed, and the vicinity of the active region is formed into a mesa stripe shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2860286A JPS62185390A (en) | 1986-02-10 | 1986-02-10 | Semiconductor laser diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2860286A JPS62185390A (en) | 1986-02-10 | 1986-02-10 | Semiconductor laser diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62185390A true JPS62185390A (en) | 1987-08-13 |
Family
ID=12253133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2860286A Pending JPS62185390A (en) | 1986-02-10 | 1986-02-10 | Semiconductor laser diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62185390A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60169184A (en) * | 1984-02-13 | 1985-09-02 | Mitsubishi Electric Corp | Semiconductor laser |
-
1986
- 1986-02-10 JP JP2860286A patent/JPS62185390A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60169184A (en) * | 1984-02-13 | 1985-09-02 | Mitsubishi Electric Corp | Semiconductor laser |
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