JPS62182977U - - Google Patents
Info
- Publication number
- JPS62182977U JPS62182977U JP6959686U JP6959686U JPS62182977U JP S62182977 U JPS62182977 U JP S62182977U JP 6959686 U JP6959686 U JP 6959686U JP 6959686 U JP6959686 U JP 6959686U JP S62182977 U JPS62182977 U JP S62182977U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- base
- airtight chamber
- sealing
- vertical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims 2
- 239000012808 vapor phase Substances 0.000 claims 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 239000000565 sealant Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 239000003566 sealing material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
第１図は本考案の要部断面図、第２図は従来例
の断面図である。
１１……基台、１３，１４……シール材、１５
……石英ベルジヤ、２０……反応室、２７……サ
セプタ、２８……基板。
FIG. 1 is a sectional view of a main part of the present invention, and FIG. 2 is a sectional view of a conventional example. 11...Base, 13, 14...Sealing material, 15
...Quartz bell gear, 20...Reaction chamber, 27...Susceptor, 28...Substrate.
Claims (1)
内へ前記基台に対し水平に設けられたサセプタ上
に載置された複数の基板表面に半導体物質のエピ
タキシヤル薄膜を気相成長させる縦型気相成長装
置において、前記気密室のシールを行うシール材
が接する部材に非粘着物質をコーテイングしたこ
とを特徴とする縦型気相成長装置のシール機構。 A vertical vapor phase method in which epitaxial thin films of semiconductor materials are grown in vapor phase on the surfaces of a plurality of substrates placed on a susceptor installed horizontally to the base in an airtight chamber formed by a base and a quartz bell gear, etc. 1. A sealing mechanism for a vertical vapor phase growth apparatus, characterized in that a non-adhesive substance is coated on a member in contact with a sealant for sealing the airtight chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6959686U JPS62182977U (en) | 1986-05-09 | 1986-05-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6959686U JPS62182977U (en) | 1986-05-09 | 1986-05-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62182977U true JPS62182977U (en) | 1987-11-20 |
Family
ID=30910472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6959686U Pending JPS62182977U (en) | 1986-05-09 | 1986-05-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62182977U (en) |
-
1986
- 1986-05-09 JP JP6959686U patent/JPS62182977U/ja active Pending
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