JPS6217874B2 - - Google Patents
Info
- Publication number
- JPS6217874B2 JPS6217874B2 JP56015467A JP1546781A JPS6217874B2 JP S6217874 B2 JPS6217874 B2 JP S6217874B2 JP 56015467 A JP56015467 A JP 56015467A JP 1546781 A JP1546781 A JP 1546781A JP S6217874 B2 JPS6217874 B2 JP S6217874B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- metal
- metal coating
- lead
- die pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011347 resin Substances 0.000 claims description 35
- 229920005989 resin Polymers 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000000956 alloy Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-FTXFMUIASA-N lead-202 Chemical compound [202Pb] WABPQHHGFIMREM-FTXFMUIASA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
【発明の詳細な説明】
本発明はリードフレームに半導体素子を載置
し、これを樹脂封止した半導体装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device in which a semiconductor element is mounted on a lead frame and sealed with resin.
従来のこのような半導体装置に於ては、銅、鉄
或いはこれらの合金よりなるリードフレームで、
ダイパツト部と外部導出リードの一部、即ちダイ
パツド部に近接し金属細線の接続される部分のみ
に、例えば金或いは銀の如き貴金属が選択的にめ
つきされたリードフレームが広く用いられてい
る。このようなリードフレームに半導体素子を載
置し、金属細線による配線を施した後、半導体素
子周辺と金属配線部とを樹脂で封止した半導体装
置では、リードフレームが樹脂表面と接する境界
部附近に於て、樹脂はリードフレームの素材金属
と直接接触する構造を有している。また、樹脂を
封止した後外部導出リードの樹脂より外部に導出
された部位に、主に良好な半田付け性を得ること
と、酸化腐食を防止することを目的に、例えば
錫、鉛、或いはこれらの合金よりなる外装金属被
膜が形成されている。 In conventional semiconductor devices, the lead frame is made of copper, iron, or an alloy of these.
A lead frame is widely used in which a noble metal such as gold or silver is selectively plated only on the die pad portion and a portion of the external lead, that is, the portion close to the die pad portion and to which a thin metal wire is connected. In a semiconductor device such as this, in which a semiconductor element is placed on a lead frame, wiring is performed using thin metal wires, and the periphery of the semiconductor element and the metal wiring are sealed with resin, the area near the boundary where the lead frame contacts the resin surface. In this case, the resin has a structure in which it is in direct contact with the metal material of the lead frame. In addition, after sealing the resin, the parts of the external leads that are led out from the resin are coated with, for example, tin, lead, or other materials, mainly to obtain good solderability and to prevent oxidative corrosion. An exterior metal coating made of these alloys is formed.
このような従来の半導体装置に於いては、樹脂
封入の際に樹脂の境界部より、リード表面に漏出
した樹脂薄膜の付着した部分（いわゆる樹脂バ
リ）には、外装金属被膜は被覆されず、またこの
樹脂薄膜が脱落すると、リードフレームの素材金
属が露出し、この露出部で素材金属の酸化腐食が
進行し、リードの断線等を生じ易いという欠点を
有している。 In such conventional semiconductor devices, the outer metal coating does not cover the parts (so-called resin burrs) where the resin thin film leaked onto the lead surface from the resin boundary during resin encapsulation. Further, when this thin resin film falls off, the metal material of the lead frame is exposed, and oxidation corrosion of the metal material progresses in this exposed portion, which is likely to cause disconnection of the leads.
本発明の目的は耐酸化性の優れた機械的に強い
リードを有する信頼度の優れた半導体装置を提供
することにある。 An object of the present invention is to provide a highly reliable semiconductor device having mechanically strong leads with excellent oxidation resistance.
即ち、本発明の半導体装置によれば、樹脂封入
の際に付着する樹脂薄膜の外装金属被膜の被覆さ
れなくなるリード部分には予め、酸化耐食性の優
れた、例えばニツケル銀、アルミニウムあるいは
これらの合金の金属被膜が形成された半導体装置
を得る。 That is, according to the semiconductor device of the present invention, the lead portions that are not covered by the outer metal coating of the resin thin film that is attached during resin encapsulation are coated with a material having excellent oxidation corrosion resistance, such as nickel silver, aluminum, or an alloy thereof. A semiconductor device on which a metal film is formed is obtained.
このような半導体装置によればリードの素材金
属の露出を防止でき、酸化腐食の進行し難い信頼
度の高い半導体装置を供給することが可能であ
る。 According to such a semiconductor device, it is possible to prevent the material metal of the leads from being exposed, and it is possible to provide a highly reliable semiconductor device in which oxidation corrosion is difficult to progress.
次に本発明説明の為に従来の半導体装置ならび
に、本発明の半導体装置の一実施例につさ図面を
参照してより詳細に説明する。 Next, in order to explain the present invention, a conventional semiconductor device and an embodiment of the semiconductor device of the present invention will be described in more detail with reference to the drawings.
第１図は従来の半導体装置を示す縦断面図、第
２Ａ図は本発明の半導体装置の一実施例を示す縦
断面図、第２Ｂ図は第２Ａ図の実施例の樹脂を除
いた上面図である。第１図に於いて、例えば銅、
鉄、或いはこれらの合金よりなるリードフレーム
１００はダイパツド部１０１ならびに、外部導出
リード１０２のダイパツド部１０１に近接する先
端部１０３には、例えば金、銀の如き貴金属１０
４がめつきされている。半導体素子１０５は、ダ
イパツド部１０１に固着され、半導体素子１０５
の電極（図示せず）と外部導出リード１０２は金
属細線１０６により、リード先端１０３で接続さ
れている。 FIG. 1 is a vertical sectional view showing a conventional semiconductor device, FIG. 2A is a vertical sectional view showing an embodiment of the semiconductor device of the present invention, and FIG. 2B is a top view of the embodiment of FIG. 2A with the resin removed. It is. In Figure 1, for example, copper,
The lead frame 100 made of iron or an alloy thereof has a die pad portion 101 and a tip portion 103 of the external lead 102 close to the die pad portion 101 that is coated with a precious metal 10 such as gold or silver.
4 is plated. The semiconductor element 105 is fixed to the die pad part 101, and the semiconductor element 105 is fixed to the die pad part 101.
An electrode (not shown) and an external lead 102 are connected at a lead tip 103 by a thin metal wire 106 .
半導体素子１０５、金属細線１０６、ならびに
リードフレーム１００のこれら装着部は樹脂１０
７により封止され、外部導出リード１０２の樹脂
１０７より外部に導出された部位には、例えば
錫、鉛或いはこれらの合金よりなる外装金属被膜
１０８が形成されている。 The semiconductor element 105, the thin metal wire 106, and the mounting portion of the lead frame 100 are made of resin 10.
An exterior metal coating 108 made of, for example, tin, lead, or an alloy thereof is formed on a portion of the external lead lead 102 that is sealed by the resin 107 and led out from the resin 107 .
このような従来の半導体装置に於いては、樹脂
１０６を封入する際、樹脂１０７の境界部より、
外部導出リード１０２の表面に漏出した樹脂薄膜
１０９の付着した部分には、外装金属被膜１０８
は被覆されず、また、この樹脂薄膜１０９が脱落
すると、リードフレーム１００の素材金属が露出
する為、前述の如き欠点を有している。 In such a conventional semiconductor device, when encapsulating the resin 106, from the boundary of the resin 107,
The outer metal coating 108 is applied to the part where the leaked resin thin film 109 adheres to the surface of the external lead-out lead 102.
is not covered, and when the thin resin film 109 falls off, the metal material of the lead frame 100 is exposed, resulting in the drawbacks mentioned above.
本発明は従来の半導体装置のかかる欠点を解消
するものである。即ち、第２Ａ図、第２Ｂ図に於
いて、例えば、銅、鉄、或いはこれらの合金より
なるリードフレーム２００のダイパツド部２０
１、ならびに外部導出リード２０２のダイパツド
部２０１に近接する先端部２０３には、例えば
金、銀の如き貴金属２０４がめつきされ、後に樹
脂２０７で封止される境界部に例えばニツケル、
銀、アルミニウム、或いは、これらの合金等より
なる金属被膜２１０が形成されている。半導体素
子２０５はダイパツド部２０１に固着され、半導
体素子２０５の電極（図示せず）と外部導出リー
ド２０２は金属細線２０６によりリード先端２０
３で接続されている。半導体素子２０５、金属細
線２０６ならびにリードフレーム２００のこれら
装着部は樹脂２０６により封止され外部導出リー
ド２０２の、前記金属被膜２１０を含み、樹脂２
０７より外部に導出された部位には上述の如き金
属被膜２０７が形成されている。 The present invention eliminates these drawbacks of conventional semiconductor devices. That is, in FIGS. 2A and 2B, for example, the die pad portion 20 of the lead frame 200 made of copper, iron, or an alloy thereof
1 and the tip portion 203 of the external lead-out lead 202 close to the die pad portion 201 are plated with a noble metal 204 such as gold or silver, and the boundary portion that will be later sealed with resin 207 is plated with, for example, nickel, etc.
A metal coating 210 made of silver, aluminum, or an alloy thereof is formed. The semiconductor element 205 is fixed to the die pad part 201, and the electrodes (not shown) of the semiconductor element 205 and the external leads 202 are connected to the lead tips 20 by thin metal wires 206.
Connected by 3. The mounting portions of the semiconductor element 205, the thin metal wires 206, and the lead frame 200 are sealed with a resin 206, and include the metal coating 210 of the external leads 202.
A metal coating 207 as described above is formed on the portion led out from 07.
このような本発明の半導体装置に於ては、樹脂
封止工程でリード２０２上に所定部位からはみ出
して被着する樹脂薄膜２０９により外装金属被膜
２０８の被覆されない部分には、酸化、耐食性の
優れた金属被膜２１０が形成されている為、不所
望にはみ出した樹脂薄膜２０９を除去してもリー
ドフレーム２００の素材金属は露出することがな
く、外部導出リード２０２の酸化腐食の進行によ
る断線等の生じ難い信頼度の高い半導体装置を提
供することができる。 In such a semiconductor device of the present invention, the resin thin film 209 that protrudes from a predetermined portion and adheres onto the leads 202 during the resin sealing process covers the portions of the exterior metal coating 208 that are not covered by the resin film, which has excellent oxidation and corrosion resistance. Since the metal coating 210 is formed, the raw metal of the lead frame 200 will not be exposed even if the resin thin film 209 that has undesirably protruded is removed. It is possible to provide a highly reliable semiconductor device that is unlikely to cause such problems.
以上に一実施例を説明したが、金属被膜２１０
は耐酸化性が強く、リード素材との密着力の強い
ものであれば、ニツケルや銀やアルミニウムに限
られることはない。又、この金属被膜２１０は樹
脂表面近傍のリード全表面に被着すればより一層
効果的であることは明らかである。 Although one embodiment has been described above, the metal coating 210
is not limited to nickel, silver, or aluminum, as long as it has strong oxidation resistance and strong adhesion to the lead material. Furthermore, it is clear that this metal coating 210 is more effective if it is applied to the entire surface of the lead near the resin surface.
第１図は従来の半導体装置を示す縦断面図、第
２Ａ図は本発明の一実施例を示す縦断面図、第２
Ｂ図は、第２Ａ図の実施例の樹脂を除いた上面図
である。
１００，２００……リードフレーム、１０１，
２０１……ダイパツド部、１０２，２０２……外
部導出リード、１０３，２０３……外部導出リー
ド先端部、１０４，２０４……貴金属めつき、１
０５，２０５……半導体素子、１０６，２０６…
…金属細線、１０７，２０７……樹脂、１０８，
２０８……外装金属被膜、１０９，２０９……樹
脂薄膜、２１０……金属被膜。
FIG. 1 is a vertical cross-sectional view showing a conventional semiconductor device, FIG. 2A is a vertical cross-sectional view showing an embodiment of the present invention, and FIG.
Figure B is a top view of the embodiment of Figure 2A with the resin removed. 100,200...lead frame, 101,
201... Die pad part, 102, 202... External lead-out lead, 103, 203... External lead-out lead tip, 104, 204... Precious metal plating, 1
05,205...Semiconductor element, 106,206...
...Thin metal wire, 107,207...Resin, 108,
208...Exterior metal coating, 109, 209...Resin thin film, 210...Metal coating.
Claims (1)
該ダイパツト部に固着された半導体素子と、該半
導体素子の複数電極と前記複数の外部導出リード
とをそれぞれ接続する金属細線と、前記複数の外
部導出リードのそれぞれにその途中において設け
られた耐酸化性の第１の金属被膜と、該第１の金
属被膜上を境界として、該半導体素子、該金属細
線、該ダイパツド部ならびにこれらの周辺の各外
部導出リード部分を含めて封止した樹脂と、半田
付性を良好にする第２の金属被膜であつて該樹脂
外において該第１の金属被膜の端部と接触し該樹
脂外にある各外部導出リード部分を被覆しかつ該
第１の金属被膜と異なる材料でなる第２の金属被
膜とを有し、該樹脂内にある各外部導出リード部
分は該第２の金属被膜で覆われていない半導体装
置。1 A die pad part, a plurality of external leads,
A semiconductor element fixed to the die pad portion, thin metal wires connecting the plurality of electrodes of the semiconductor element and the plurality of external lead-out leads, and oxidation-resistant wires provided in the middle of each of the plurality of external lead-out leads. a resin that seals the semiconductor element, the thin metal wire, the die pad portion, and each external lead portion around these with the first metal coating as a boundary; A second metal coating that improves solderability and contacts the end of the first metal coating outside the resin and covers each external lead portion outside the resin, and the first metal A semiconductor device comprising a second metal coating made of a material different from the coating, and each external lead portion within the resin is not covered with the second metal coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56015467A JPS57128947A (en) | 1981-02-04 | 1981-02-04 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56015467A JPS57128947A (en) | 1981-02-04 | 1981-02-04 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57128947A JPS57128947A (en) | 1982-08-10 |
| JPS6217874B2 true JPS6217874B2 (en) | 1987-04-20 |
Family
ID=11889599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56015467A Granted JPS57128947A (en) | 1981-02-04 | 1981-02-04 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57128947A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59117166U (en) * | 1983-01-27 | 1984-08-07 | 新電元工業株式会社 | Resin-encapsulated semiconductor device |
| US10062639B2 (en) * | 2014-12-10 | 2018-08-28 | Stmicroelectronics Sdn Bhd | Integrated circuit device with plating on lead interconnection point and method of forming the device |
-
1981
- 1981-02-04 JP JP56015467A patent/JPS57128947A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57128947A (en) | 1982-08-10 |
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