JPS6217481Y2 - - Google Patents

Description

[Detailed description of the invention] This invention is an MO used for semiconductor integrated circuits, etc.
This invention relates to an improvement in a reaction apparatus used when forming a (molybdenum) film by a vapor phase growth method. Generally, the following apparatus and method are used to form an MO film on a semiconductor device using a vapor phase growth method.

First, a carbon susceptor (wafer base) 2 is placed in the center of a horizontal quartz reaction tube 1, and silicon wafers 3 are arranged on it. A high-frequency oscillation coil 4 is wound around the outer periphery of the reaction tube 1, and high-frequency energy is supplied to the coil to generate heat in the susceptor, or an infrared lamp is used to generate heat in the susceptor to heat the wafer. In this state, when _MOC15 (molyptene pentachloride) gas is flowed into the reaction tube together with a carrier gas, when the wafer surface temperature reaches a certain level or higher, a hydrogen reduction reaction causes an MO film to grow on the silicon wafer. This reaction is extremely sensitive to temperature, so the thickness of the MO film varies greatly depending on the wafer surface temperature, but when the temperature of the reaction tube itself exceeds a certain temperature, MO is also deposited on the inner wall of the reaction tube.

For this reason, especially in equipment that heats the susceptor with an infrared lamp, the susceptor is heated unevenly due to the MO film partially attached to the tube wall, resulting in temperature differences on the wafer surface and large variations in MO film thickness. Furthermore, there is a drawback that the surface temperature of the wafer drops below the required temperature.

The present invention relates to a vapor phase growth reaction apparatus that eliminates such drawbacks.

5 is a horizontal rectangular quartz tube, in which a gas inlet 7 is provided approximately in the center of one side wall 6 and a gas outlet 9 is provided approximately in the center of the other side wall 8. 10 is a carbon susceptor 11 disposed on the susceptor; a silicon wafer 12 is disposed along the quartz tube 5 and irradiates the susceptor; 13 is also disposed along the quartz tube 5; Pipe 1 where cooling water circulates in front of the blower that blows cooling air to the
4 is piped. Reference numeral 15 denotes a thermocouple that detects the temperature of the inner wall of the quartz tube 5. Based on the detection signal, the supply of cooling water into the pipe 14 is controlled, and the air blowing of the blower is controlled to keep the temperature of the inner wall of the quartz tube above the required level. prevent the rise of

Since the present invention has the above-mentioned structure, the temperature of the inner wall of the quartz tube does not rise above a predetermined temperature, so no metal film is deposited on the wall, and the susceptor can be heated evenly at all times to generate a uniform metal film on the silicon wafer surface. can. Note that the controlled temperature of the tube wall is naturally varied depending on the metal to be grown.

[Brief explanation of the drawing]

Figure 1 is a cross-sectional view of a conventional vapor phase growth reactor.
The figure is a sectional view of the present invention. 1, 5...Quartz tube, 2,10...Carbon susceptor, 3,11...Silicon wafer, 12...Infrared heat generating device, 13...Blower device.

Claims (1)

[Scope of utility model registration request] A vapor phase growth reaction apparatus that includes a susceptor in a quartz tube and deposits metal mixed in a carrier gas flowing into the quartz tube onto a substrate placed on the susceptor, comprising a heating means for heating the susceptor with a lamp, and a heating means for heating the susceptor with a lamp, and the tube wall. A vapor phase growth reaction apparatus comprising: a cooling means provided nearby to cool the tube wall; and a blowing means for sending cooling air to the tube wall via the cooling means.