JP2551172B2 - Vapor phase epitaxial growth system - Google Patents
Vapor phase epitaxial growth systemInfo
- Publication number
- JP2551172B2 JP2551172B2 JP1311791A JP31179189A JP2551172B2 JP 2551172 B2 JP2551172 B2 JP 2551172B2 JP 1311791 A JP1311791 A JP 1311791A JP 31179189 A JP31179189 A JP 31179189A JP 2551172 B2 JP2551172 B2 JP 2551172B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial growth
- reaction tube
- high frequency
- frequency induction
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】 〔概 要〕 気相エピタキシャル成長装置に関し、 反応管の内壁にエピタキシャル成長用ガスの成分が付
着するのを防止するために設けた保温用具により保温さ
れた反応管の内壁の温度が、高周波誘導コイルに通電す
る電流によって変動しないような気相エピタキシャル成
長装置を目的とし、 サセプタ上に載置したエピタキシャル成長用基板を挿
入する反応管と、 この反応管の周囲に設けられ、このセサプタに高周波
電力に起因する渦電流を誘導させてこのサセプタを加熱
することによりエピタキシャル成長用基板を加熱する高
周波誘導コイルとから成り、 この反応管内に導入されるエピタキシャル成長用ガス
を分解してこのエピタキシャル成長用基板に被着する気
相エピタキシャル成長装置であって、 この反応管の外壁と高周波誘導コイルとの間に高周波
誘導を受けない保温用具を配置し、この保温用具を構成
する保温管の内部に高周波誘導を受ける線状加熱部材、
或いは環状加熱部材を埋設するように構成する。DETAILED DESCRIPTION OF THE INVENTION [Overview] Regarding a vapor phase epitaxial growth apparatus, the temperature of the inner wall of a reaction tube kept warm by a heat-retaining tool provided to prevent the components of the epitaxial growth gas from adhering to the inner wall of the reaction tube. However, for the purpose of a vapor phase epitaxial growth apparatus that does not fluctuate due to the current applied to the high frequency induction coil, a reaction tube into which the substrate for epitaxial growth placed on the susceptor is inserted, and this reaction tube is provided around this reaction tube. It consists of a high-frequency induction coil that heats the substrate for epitaxial growth by inducing eddy currents caused by high-frequency power to heat the susceptor.The gas for epitaxial growth introduced into the reaction tube is decomposed into the substrate for epitaxial growth. It is a vapor phase epitaxial growth apparatus to be deposited, Wall and place the insulation devices not subjected to high frequency induction between the high-frequency induction coil, a linear heating member which receives the high-frequency induction in the interior of the heat insulating tube constituting the heat insulating devices,
Alternatively, the annular heating member is embedded.
本発明は気相エピタキシャル成長装置に関する。 The present invention relates to a vapor phase epitaxial growth apparatus.
赤外線検知素子形成材料として、エネルギーバンドギ
ャップの狭い水銀・カドミウム・テルル（Hg1-X CdX T
e）の結晶が用いられている。Mercury, cadmium, tellurium (Hg 1-X Cd X T
The crystal of e) is used.
このようなHg1-x CdX Teの結晶を素子形成に都合が良
いように、大面積で薄層状態に形成するために気相エピ
タキシャル成長装置が用いられている。A vapor phase epitaxial growth apparatus is used to form such a Hg 1-x Cd X Te crystal in a thin layer state in a large area so that it is convenient for device formation.
従来の気相エピタキシャル成長装置は、第３図に示す
ように、石英ガラスで形成された反応管１の内部にカー
ボンより成るサセプタ２に載置された例えばカドミウム
テルル（CdTe）より成るエピタキシャル成長用基板３が
挿入され、該反応管１内が排気された後、水素ガス供給
管より水銀を収容した蒸発器５や、ジメチルカドミウム
を収容した蒸発器６や、ジエチルテルルを収容した蒸発
器７内に水素ガスを導入し、該水素ガスに前記水銀や、
ジメチルカドミウムや、ジエチルテルルを担持させたエ
ピタキシャル成長用ガスをガス導入管８を通じて反応管
１内に導く。As shown in FIG. 3, a conventional vapor phase epitaxial growth apparatus includes an epitaxial growth substrate 3 made of, for example, cadmium tellurium (CdTe) mounted on a susceptor 2 made of carbon inside a reaction tube 1 made of quartz glass. Is inserted and the inside of the reaction tube 1 is evacuated, then hydrogen is introduced from the hydrogen gas supply tube into the evaporator 5 containing mercury, the evaporator 6 containing dimethyl cadmium, and the evaporator 7 containing diethyl tellurium. Introducing a gas, the mercury and the mercury in the hydrogen gas,
A gas for epitaxial growth supporting dimethyl cadmium or diethyl tellurium is introduced into the reaction tube 1 through the gas introduction tube 8.
そして反応管の周囲に設けた高周波誘導コイル９に通
電して、前記サセプタ２を加熱することでエピタキシャ
ル成長用基板３を加熱し、該反応管内に導入されたエピ
タキシャル成長用ガスを加熱分解して基板上にHg1-x Cd
X Teのエピタキシャル結晶をエピタキシャル成長してい
る。Then, the high-frequency induction coil 9 provided around the reaction tube is energized to heat the susceptor 2 to heat the epitaxial growth substrate 3, and the epitaxial growth gas introduced into the reaction tube is decomposed by heating to decompose the substrate. At Hg 1-x Cd
The epitaxial crystal of X Te is epitaxially grown.
なお、12は排気管でフランジ13を介してエピタキシャ
ル成長後の廃棄ガスを反応管の外部へ排気している。An exhaust pipe 12 exhausts the waste gas after the epitaxial growth to the outside of the reaction pipe through a flange 13.
ところで、上記エピタキシャル成長用ガスの内の水銀
ガスの飽和蒸気圧温度は180℃程度と低いために、反応
管の内壁に水銀ガスが凝固して付着する問題があり、そ
のためエピタキシャル成長用ガスが所定の成分を維持し
た状態でエピタキシャル成長用基板に供給されず、組成
の安定したHg1-X CdX Teのエピタキシャル結晶が得られ
ない問題がある。By the way, since the saturated vapor pressure temperature of mercury gas in the epitaxial growth gas is as low as about 180 ° C., there is a problem that mercury gas is solidified and adheres to the inner wall of the reaction tube, and therefore the epitaxial growth gas has a predetermined component. It is not supplied to the substrate for epitaxial growth while maintaining the above condition, and there is a problem that an epitaxial crystal of Hg 1-X Cd X Te having a stable composition cannot be obtained.
この問題を解決するために、従来の気相エピタキシャ
ル成長装置に於いては、高周波誘導コイル９と反応管１
の間に、反応管の内壁を加熱するヒータ10を設け、該ヒ
ータに高周波誘導コイルに通電する高周波電源とは別個
にヒータ電源11を設け、該ヒータ電源を用いてヒータに
通電することでヒータを加熱し、反応管の内壁の温度を
所定の温度に保ち、水銀が反応管の内壁に付着しないよ
うにしている。In order to solve this problem, in the conventional vapor phase epitaxial growth apparatus, the high frequency induction coil 9 and the reaction tube 1 are used.
Between the two, a heater 10 for heating the inner wall of the reaction tube is provided, a heater power source 11 is provided separately from the high frequency power source for energizing the high frequency induction coil in the heater, and a heater is energized by using the heater power source. Is heated to keep the temperature of the inner wall of the reaction tube at a predetermined temperature so that mercury does not adhere to the inner wall of the reaction tube.
〔発明が解決しようとする課題〕 ところで上記した従来の気相エピタキシャル成長装置
では、この保温用のヒータ10の材質が、高周波誘導を受
けやすい材質で形成されており、前記高周波誘導コイル
９に通電する高周波電力の誘導を受けて一定の温度に制
御されない問題がある。[Problems to be Solved by the Invention] In the conventional vapor phase epitaxial growth apparatus described above, however, the material of the heater 10 for heat retention is formed of a material that easily receives high frequency induction, and the high frequency induction coil 9 is energized. There is a problem that the temperature is not controlled to a constant temperature due to induction of high frequency power.
この反応管の内壁の温度が所定温度以上に高くなる
と、反応管内に導入されてきたジエチルテルルガスやジ
メチルカドミウムガス等のエピタキシャル成長用ガス
が、エピタキシャル成長用基板上に到達する迄に分解し
て、所定の組成のエピタキシャル結晶が基板上に形成さ
れない問題がある。When the temperature of the inner wall of the reaction tube becomes higher than a predetermined temperature, the epitaxial growth gas such as diethyl tellurium gas or dimethyl cadmium gas introduced into the reaction tube is decomposed by the time it reaches the epitaxial growth substrate to a predetermined temperature. There is a problem that an epitaxial crystal having the composition of 1 is not formed on the substrate.
本発明は上記した問題点を除去するもので、高周波誘
導コイルに通電する高周波電流によって影響を受けない
保温用具を有する気相エピタキシャル成長装置を目的と
する。The present invention eliminates the above-mentioned problems, and an object of the present invention is to provide a vapor phase epitaxial growth apparatus having a heat retaining tool which is not affected by the high frequency current passing through the high frequency induction coil.
本発明の気相エピタキシャル成長装置は、サセプタ上
に載置したエピタキシャル成長用基板を挿入する反応管
と、この反応管の周囲に設けられ、このサセプタに高周
波電力に起因する渦電流を誘導させてこのサセプタを加
熱することによりエピタキシャル成長用基板を加熱する
高周波誘導コイルとから成り、この反応管内に導入され
るエピタキシャル成長用ガスを分解してこのエピタキシ
ャル成長用基板に被着する気相エピタキシャル成長装置
であって、この反応管の外壁と高周波誘導コイルとの間
に高周波誘導を受けない保温用具を配置し、この保温用
具を構成する保温管の内部に高周波誘導を受ける線状加
熱部材、或いは環状加熱部材を埋設するように構成す
る。The vapor phase epitaxial growth apparatus of the present invention includes a reaction tube into which an epitaxial growth substrate placed on a susceptor is inserted, and a reaction tube that is provided around the reaction tube and induces an eddy current caused by high frequency power in the susceptor. And a high-frequency induction coil for heating the epitaxial growth substrate by heating the vapor phase epitaxial growth apparatus for decomposing the epitaxial growth gas introduced into the reaction tube and depositing the gas on the epitaxial growth substrate. A heat insulating tool that does not receive high frequency induction is placed between the outer wall of the tube and the high frequency induction coil, and a linear heating member that receives high frequency induction or an annular heating member is embedded inside the heat insulation tube that constitutes this heat insulating tool. To configure.
本発明の気相エピタキシャル成長装置は、第１図及び
第２図に示すように、高周波誘導コイル９と反応管１と
の間に高周波誘導を受けないアルミナのような絶縁性を
有し、保温性の良好な環状の保温用具21を配置してお
り、第２図（ａ）、及び第２図（ｂ）に示すように、鉄
等の高周波誘導を受ける材料からなる線状加熱部材22、
或いは環状加熱部材23を形成し、これらの加熱部材を保
温用具を構成する保温管25内に埋設することにより、保
温用具の温度を所定の値に制御することができるので、
反応管の内壁の温度を所定の温度に制御することが可能
となる。The vapor phase epitaxial growth apparatus of the present invention, as shown in FIGS. 1 and 2, has an insulating property such as alumina that does not receive high frequency induction between the high frequency induction coil 9 and the reaction tube 1, and has a heat retention property. 2 is arranged, and as shown in FIGS. 2 (a) and 2 (b), a linear heating member 22 made of a material that receives high frequency induction such as iron,
Alternatively, the annular heating member 23 is formed, and by embedding these heating members in the heat retaining tube 25 constituting the heat retaining tool, the temperature of the heat retaining tool can be controlled to a predetermined value.
It is possible to control the temperature of the inner wall of the reaction tube to a predetermined temperature.
以下、図面を用いて本発明の一実施例につき詳細に説
明する。An embodiment of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の気相エピタキシャル成長装置の模式
図、第２図は本発明の保温用具の実施例の断面図であ
る。FIG. 1 is a schematic view of a vapor phase epitaxial growth apparatus of the present invention, and FIG. 2 is a sectional view of an embodiment of a heat retaining tool of the present invention.
第１図及び第２図に示すように、本発明の気相エピタ
キシャル成長装置は、反応管１と高周波誘導コイル９と
の管に環状で高周波誘導を受けないアルミナ等で形成さ
れた円筒状の保温用具21を配置し、この環状の保温用具
21を構成する保温管25の内部に高周波誘導を受ける鉄等
の材料からなる線状加熱部材22、或いは環状加熱部材23
を埋設し、この線状加熱部材の線径、或いは環状加熱部
材の板厚等を適宜変化すると、これらの部材が高周波誘
導コイル９に印加する高周波電力の誘導により加熱さ
れ、その加熱温度がこれらの加熱部材の線径、或いは板
厚等によって変化するので、これらの線径、或いは板厚
の選択により管壁の温度を所望の温度にすることが可能
となる。As shown in FIG. 1 and FIG. 2, the vapor phase epitaxial growth apparatus of the present invention has a cylindrical heat-retaining body made of alumina or the like which is annular in the tubes of the reaction tube 1 and the high frequency induction coil 9 and is not subjected to high frequency induction. Place the tool 21 and keep it warm
A linear heating member 22 or a ring-shaped heating member 23 made of a material such as iron that receives high frequency induction inside a heat insulating tube 25 that constitutes 21
Embedded therein and the wire diameter of the linear heating member or the plate thickness of the annular heating member is appropriately changed, these members are heated by induction of high frequency power applied to the high frequency induction coil 9, and the heating temperature is Since it varies depending on the wire diameter or the plate thickness of the heating member, the temperature of the pipe wall can be set to a desired temperature by selecting the wire diameter or the plate thickness.
これらの加熱部材の材質は、鉄に限定されるものでな
く、カンタル線やニクロム線等を用いることが可能であ
る。The material of these heating members is not limited to iron, and it is possible to use Kanthal wire, Nichrome wire, or the like.
なお、第１図に示すように、保温用具21を設けていな
い領域に補助ヒータ24を設ければ、この領域の反応管の
内壁にエピタキシャル成長用ガスの成分が付着するのを
防止することが可能となる。As shown in FIG. 1, if an auxiliary heater 24 is provided in a region where the heat retaining tool 21 is not provided, it is possible to prevent the components of the epitaxial growth gas from adhering to the inner wall of the reaction tube in this region. Becomes
このような本発明の気相エピタキシャル成長装置を用
いて、エピタキシャル成長する場合、エピタキシャル成
長ガスとしての水素ガスをキャリアガスとして６／分
の流量で反応管内に導入し、また反応管内のガス圧を１
気圧として、前記水素ガスに担持されたジエチルテルル
ガスを、2.4×10-4気圧の分圧で、ジメチルカドミウム
ガスを、5.0×10-5気圧の分圧で、水銀を６×10-3気圧
の分圧で反応管内に導入する。When epitaxial growth is performed using such a vapor phase epitaxial growth apparatus of the present invention, hydrogen gas as an epitaxial growth gas is introduced into the reaction tube at a flow rate of 6 / min as a carrier gas, and the gas pressure in the reaction tube is set to 1
As the atmospheric pressure, diethyl tellurium gas supported on the hydrogen gas is used at a partial pressure of 2.4 × 10 −4 atm, dimethylcadmium gas is at a partial pressure of 5.0 × 10 −5 atm, and mercury is 6 × 10 −3 atm. Is introduced into the reaction tube at a partial pressure of.
そして前記サセプタを390℃の温度で加熱し、前記保
温用具の加熱部材の線径、或いは厚さを変化させること
で反応管の管壁の温度が190℃に保たれ、この成長温度
条件で気相エピタキシャル成長すると、組成の安定した
エピタキシャル結晶が再現性良く得られた。Then, by heating the susceptor at a temperature of 390 ° C. and changing the wire diameter or the thickness of the heating member of the heat retaining tool, the temperature of the wall of the reaction tube is maintained at 190 ° C. By phase epitaxial growth, epitaxial crystals with stable composition were obtained with good reproducibility.
以上述べたように、本発明の気相エピタキシャル成長
装置によれば、高周波誘導コイル９に通電する高周波電
力の制御により、保温用具の温度を所定の温度に保持す
ることができるので、反応管の管壁の温度を所定の温度
に保持することが可能となり、組成の安定したエピタキ
シャル結晶を得ることが可能となる。As described above, according to the vapor phase epitaxial growth apparatus of the present invention, the temperature of the heat retaining tool can be maintained at a predetermined temperature by controlling the high frequency power supplied to the high frequency induction coil 9, and thus the tube of the reaction tube can be maintained. The wall temperature can be maintained at a predetermined temperature, and an epitaxial crystal with a stable composition can be obtained.
以上の説明から明らかなように、本発明の気相エピタ
キシャル成長装置によれば、反応管の管壁の温度が高周
波誘導コイルに通電する高周波電力の制御により保温用
具の温度が安定した温度になり、再現性の良いエピタキ
シャル結晶を得ることが可能となる。As is apparent from the above description, according to the vapor phase epitaxial growth apparatus of the present invention, the temperature of the tube wall of the reaction tube becomes a stable temperature due to the control of the high frequency power supplied to the high frequency induction coil, It is possible to obtain an epitaxial crystal with good reproducibility.
第１図は本発明の気相エピタキシャル成長装置の模式
図、 第２図（ａ）および第２図（ｂ）は本発明の保温用具の
実施例の断面図、 第３図は従来の気相エピタキシャル成長装置の模式図で
ある。 図において、 １は反応管、２はサセプタ、３はエピタキシャル成長用
基板、９は高周波誘導コイル、21は保温用具、22は線状
加熱部材、23は環状加熱部材、24は補助ヒータ、25は保
温管を示す。FIG. 1 is a schematic view of a vapor phase epitaxial growth apparatus of the present invention, FIGS. 2 (a) and 2 (b) are cross-sectional views of an embodiment of a heat retaining tool of the present invention, and FIG. 3 is a conventional vapor phase epitaxial growth. It is a schematic diagram of an apparatus. In the figure, 1 is a reaction tube, 2 is a susceptor, 3 is a substrate for epitaxial growth, 9 is a high frequency induction coil, 21 is a heat retaining tool, 22 is a linear heating member, 23 is an annular heating member, 24 is an auxiliary heater, and 25 is heat retaining. Shows a tube.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭61−229320（ＪＰ，Ａ) 特開 昭60−110116（ＪＰ，Ａ) 特開 昭59−171113（ＪＰ，Ａ) 特開 昭61−242015（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A 61-229320 (JP, A) JP-A 60-110116 (JP, A) JP-A 59-171113 (JP, A) JP-A 61- 242015 (JP, A)
Claims (1)
用基板を挿入する反応管と、 該反応管の周囲に設けられ、前記サセプタに高周波電力
に起因する渦電流を誘導させて該サセプタを加熱するこ
とによりエピタキシャル成長用基板を加熱する高周波誘
導コイルとから成り、 該反応管内に導入されるエピタキシャル成長用ガスを分
解して前記エピタキシャル成長用基板に被着する気相エ
ピタキシャル成長装置であって、 前記反応管の外壁と高周波誘導コイルとの間に高周波誘
導を受けない保温用具を配置し、前記保温用具を構成す
る保温管の内部に高周波誘導を受ける線状加熱部材、或
いは環状加熱部材を埋設したことを特徴とする気相エピ
タキシャル成長装置。1. A reaction tube into which a substrate for epitaxial growth mounted on a susceptor is inserted, and a reaction tube provided around the reaction tube to induce an eddy current resulting from high frequency power in the susceptor to heat the susceptor. A vapor-phase epitaxial growth apparatus for decomposing an epitaxial growth gas introduced into the reaction tube and depositing the gas on the epitaxial growth substrate by a high frequency induction coil for heating the epitaxial growth substrate by an outer wall of the reaction tube. A heat insulating tool that is not subjected to high frequency induction is arranged between the high frequency induction coil, and a linear heating member that receives high frequency induction or an annular heating member is embedded inside a heat insulating tube that constitutes the heat insulating tool. Vapor phase epitaxial growth system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1311791A JP2551172B2 (en) | 1989-11-29 | 1989-11-29 | Vapor phase epitaxial growth system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1311791A JP2551172B2 (en) | 1989-11-29 | 1989-11-29 | Vapor phase epitaxial growth system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03171638A JPH03171638A (en) | 1991-07-25 |
| JP2551172B2 true JP2551172B2 (en) | 1996-11-06 |
Family
ID=18021498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1311791A Expired - Lifetime JP2551172B2 (en) | 1989-11-29 | 1989-11-29 | Vapor phase epitaxial growth system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2551172B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6331212B1 (en) * | 2000-04-17 | 2001-12-18 | Avansys, Llc | Methods and apparatus for thermally processing wafers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59171113A (en) * | 1983-03-17 | 1984-09-27 | Fuji Electric Corp Res & Dev Ltd | Heat-treatment furnace for semiconductor wafer |
| JPS60110116A (en) * | 1983-11-18 | 1985-06-15 | Furukawa Electric Co Ltd:The | Semiconductor thin film vapor growth apparatus |
| JPS61229320A (en) * | 1985-04-03 | 1986-10-13 | Matsushita Electric Ind Co Ltd | Vapor growth device |
-
1989
- 1989-11-29 JP JP1311791A patent/JP2551172B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03171638A (en) | 1991-07-25 |
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