JPS62174371A - Ion plating device - Google Patents

Abstract

PURPOSE:To form a thin film having a uniform film thickness and film quality on a substrate by providing freely movable two stands and maintaining the specified distances between the evaporating sources and high-frequency coils respectively provided to the stands and the substrate provided above the same. CONSTITUTION:The curved substrate 1 for vapor deposition is conveyed in a vacuum chamber 2. The cylindrical stand 3A which is feely axially movable is provided in the chamber 2 through said chamber. The evaporating source 4 is provided to the top end of the stand 3A and a vapor deposition material 5 is supplied toward the substrate 1. A stationary feeder 71 and refrigerant supply pipe 81 are inserted into the stand 3A and are respectively connected to the flexible feeder 73 and frexible refrigerant pipe 82. The distance between the evaporating source 4 and the substrate 1 is always maintained constant. The other cylindrical stand 3B is axially freely movably provided in a vacuum chamber 2 through said chamber. The high-frequency coil 11 is provided to the top end of the stand 3B. The material 5 is ionized and accelerated to be stuck onto the substrate 1.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application 1] The present invention relates to an ion plating apparatus for forming a thin film on a glass substrate or the like.

[Prior art 1: The ion plating device has an evaporation source and an evaporation target inside a vacuum chamber.
The substrates are placed facing each other, and the evaporation material as a film-forming material is evaporated from the evaporation source, and the evaporation material is ionized by a high-frequency coil, accelerated in an electric field, and collided with the substrate to form a thin film with high precision. can be formed.

By the way, when forming a selectively transmitting light film or the like on a large substrate such as a vehicle window glass, a method is used in which the substrate is moved in a direction perpendicular to the evaporation source and a film is sequentially formed thereon. ing. In this case, if the substrate is curved, the facing distance between the evaporation source and the substrate portion passing directly above it will gradually change, so that the thickness of the film formed on the substrate will not be constant.

Therefore, for example, Japanese Patent Application Laid-Open No. 59-182738 discloses that the evaporation speed of the evaporation material is changed according to the change in the facing distance,
A thin film forming apparatus that obtains a uniform film thickness has been proposed.

[Problems to be Solved by the Invention] However, although a uniform film thickness can be obtained with the conventional apparatus described above, there is still a problem in that the quality of the film is not uniform due to the difference in flying distance of the vapor deposited H.

The present invention solves the problems of such conventional devices, and aims to provide an ion plating device capable of forming a thin film of uniform thickness and quality on a large, curved substrate.

[Means for Solving the Problems 1] The configuration of the present invention will be explained with reference to FIG. 1. A curved substrate 1 to be deposited is conveyed from one side to the other (arrow in the figure) in a vacuum chamber 2. A cylindrical pedestal 3A is installed through the wall of the vacuum chamber 2 and supported airtightly and movably in the axial direction. An evaporation source 4 to be supplied is installed in the mount 3A. A fixed power supply line 71 connected to the evaporation source 4 and a refrigerant supply pipe for supplying refrigerant to cool the evaporation source 4, for example, a cooling A water supply pipe 81 is inserted in an airtight manner, and these are connected to a flexible power supply line 73 and a flexible water supply pipe 82, respectively, at the outdoor end 32 of the pedestal 3A. As a result, the forward and reverse movement ratio is set so that the distance between the evaporation source 4 and the opposing portion of the substrate 1 passing directly above it is always constant.

Another cylindrical pedestal 3B is provided on the wall of the vacuum chamber 2 adjacent to the pedestal 3A, and the pedestal 3B penetrates the chamber wall airtightly and movably in the axial direction.

A high frequency coil 11 is provided at the tip of the pedestal 3B, positioned between the evaporation source 4 and the substrate 1.The tip forms an airtight box and introduces the atmosphere into the box. The matching circuit 10 of the high frequency coil 11 is housed therein. A fixed power supply line 75 connected to the matching circuit 10 is inserted through the cylinder of the pedestal 3B, and the power supply line 75 is connected to a flexible power supply line 76 at the outdoor end 37 of the pedestal 3B. . The pedestal 3B is moved upward by the driving means 6B.

The movement is shown following the pedestal 3A.

[Effect 1] The mounts 3A and 3B, which are movable in the axial direction, are moved by driving means 6A and 6B, respectively, and the evaporation source 4 on the mount 3A and the high-frequency coil 11 on the mount 3B, and the upper part thereof are moved. Since the distance between the opposing parts of the substrate 1 is always kept constant, a thin film of uniform thickness and quality can be formed on the substrate 1.

Furthermore, in the present invention, the frames 3A and 3B that support the evaporation source 4 and the high-frequency coil 11, respectively, are formed into a cylindrical shape, and the fixed power supply line 71 and water supply pipe 81 leading to the evaporation source 4 are inserted into the cylinder. , or by inserting a fixed power supply line 75 leading to the high frequency coil 11, and connecting these to each mount 3A,
3B is connected to the flexible power supply line 73, 76 and the flexible water supply pipe 82 at all outer ends of the vacuum chamber 2.
Flexible power supply line 7 directly to evaporation source 4 and high frequency coil 11 inside
3.76 and accidents such as short circuits and refrigerant leaks that tend to occur when installing the flexible water supply pipe 82 to Vfi can be completely prevented.

Roughly speaking, since the tip of the pedestal 3B is formed into an airtight box-like shape in the atmosphere and the matching circuit 10 is housed therein, the distance to the high-frequency coil 11 can be made sufficiently short.

[Example] In the figure, the upper half of the vacuum chamber 2 is formed to be long from side to side,
The substrate 1 to be deposited is transported in the upper half in the left-right direction (arrows in the figure) by a circuit transport device.

The substrate 1 is curved in the transport direction, and the curved shape is detected as the substrate 1 moves by a linear potentiometer 91 provided in contact with the upper surface thereof. A cylindrical pedestal 3A is provided on the bottom wall of the vacuum chamber 2, and the cylindrical pedestal 3A is provided through the bottom wall of the vacuum chamber 2.
is airtightly and vertically movably supported on the bottom wall via an O-ring 331 on the outer periphery of the penetration part.

The tip 31 of the pedestal 3A is closed, and the evaporation source 4 on which the electron gun 41 is installed is placed on the top surface. A evaporation material 5 is placed in the crucible of the evaporation source 4, and this is an electron gun 41.
The irradiated electrons evaporate the substrate toward the upper substrate transport path.

The outdoor end 32 of the frame 3△ is formed into a closed box shape,
A rack 61 is provided protruding from the lower surface of the outdoor end 32. The rack 61 is connected to a drive motor 6△ via a gear box 62.
When the motor 6A is rotated in the forward and reverse directions, the mount 3A moves up and down accordingly.

The motor 6A is operated by a circuit control device. That is, the control device inputs the detection signal of the alligator potentiometer 91, and in response, moves the pedestal 3A up and down by the motor 6A, thereby adjusting the distance between the evaporation source 4 and the opposing portion of the substrate 1 passing above it. keep constant.

Inside the cylindrical pedestal 3A, there are a water supply pipe 81 that supplies cooling water to the evaporation source 4, a power supply line 71 to the electron gun 41,
A signal line 72 extending to a film thickness sensor 94 located above the pedestal 3A is inserted.

Bare wires are used for the power supply line 71 and the signal line 72, and an insulating spacer 341 is provided at an appropriate position in the cylinder together with the water supply pipe 81.
Fixed. These power supply lines 71, signal lines 72, and water supply pipes 81 are connected to the electron gun 4 through open introduction terminals 351, 352, and 353 provided on the front end surface of the pedestal 3A.
1, the film thickness sensor 94, and the evaporation source 4.

Airtight introduction terminals 354, 355, and 356 are provided on the side wall of the outdoor end 32 of the frame 3A, and the other ends of the power supply line 71, the signal line 72, and the water supply pipe 81 reach these, respectively. The feeder line 71 is connected to the introduction terminal 3.
At 54, the signal line 72 is connected to a flexible power supply line 73 having an ordinary insulating coating, which extends from an external electron gun power source 92, and at an introduction terminal 355, the signal line 72 is connected to a flexible signal line 74, which extends from an external film thickness monitor 93. I'm doing it. Further, the water supply pipe 81 is connected to a flexible water supply pipe 82 which is connected to an external water supply source (circuit) at an introduction terminal 356.

A cylindrical pedestal 3B is installed on the bottom wall of the vacuum chamber 2, roughly adjacent to the cylindrical pedestal 3A. It is supported vertically and vertically.

The tip 36 and the outdoor end 37 of the pedestal 3B are formed into a closed box shape, and a rack 63 is provided with a protrusion δ2 on the lower surface of the entire outer end 37.
This is connected to the drive motor 6B via a gear A7 box 64. However, the motor 6B
As a result, the pedestal 3B is moved up and down following the pedestal 3A. - A matching circuit 10 consisting of a coil and a variable capacitor is housed in the tip 36 of the pedestal 3B, and a power supply line 75 connected to the matching circuit 10 is inserted through the cylinder of the pedestal 3B. From the matching circuit 10, a supporting stainless steel rod 111 that also serves as a power supply line extends upward through an airtight introduction terminal 357 provided on the top end surface of the pedestal 3B. The high frequency coil 11 is located directly above the coil.

The interior of the pedestal 3B is connected to the atmosphere. That is, the power supply line 75 reaches the outdoor end 37 of the pedestal 3B, and is connected to the flexible power supply line 76 from the external high-frequency power source 94 via an open introduction terminal 358 provided on the side wall thereof. The fixed power supply line 76 is fixed to the spacer 342 at a proper location.

The inside of the vacuum chamber 2 is exhausted from the exhaust port 21, and an electrode 95 is provided along the top wall of the vacuum chamber 2 near the top wall of the vacuum chamber 2 facing the evaporation source 4. The electrode 95 is connected to an external DC power source 96, thereby creating an electric field between the electrode 95 and the evaporation source 4.

In an ion plating apparatus having such a structure, when the curved substrate 1 is moved, the evaporation source 4 and the high-frequency coil 11 are moved up and down so as to always maintain the same distance from the opposing portion of the substrate 1 during movement. . The evaporation material 5 that is evaporated from the evaporation source 4, ionized by the coil 11, and accelerated by the electric field is always deposited on the substrate 1 at a constant flight distance, and a thin film of uniform thickness and film quality is sequentially formed on the substrate 1. Well formed.

The vertical movement of the pedestal 3A provided with the evaporation source 4 is guaranteed by the flexible power supply lines 73, 74 and the flexible water supply pipe 82, and the wiring 71, 72 and piping 81 in the vacuum atmosphere are connected to the pedestal 3A. Since it is fixed, problems such as short circuits and water leaks will not occur.

Further, the vertical movement of the pedestal 3B provided with the high-frequency coil 11 is guaranteed by the flexible power supply line 76, and the inside of the tip of the pedestal 3B located in the vacuum chamber is set to an atmospheric atmosphere.
Since the matching circuit 10 of the coil 11 is housed here,
The high-frequency coil 11 and the matching circuit 10 can be connected by fixed wiring, and the distance between them is short, so power loss can be kept small.

If it is not necessary to change the relative spacing between the evaporation source 4 and the high-frequency coil 11, they can be provided within the same cylindrical pedestal 3, as shown in FIG. In the figure, the pedestal 3 is moved up and down by a motor 6 via a rack 61 and a gear box 62. A matching circuit 10 is provided in the tip 31 of the pedestal 3, and the circuit 10 is connected to the high frequency coil 11 via an airtight introduction terminal 381. power supply line 71,
The signal line 72 and the water supply pipe 81 are connected to the electron gun 4 via airtight introduction terminals 382, 383, and 384, respectively.
1, the film thickness sensor 94, and the evaporation source 4, and the inside of the pedestal 3 is in an atmospheric atmosphere.

Incidentally, when forming a compound film, it is necessary to open a reactive gas supply pipe near the evaporation source 4, but the gas supply pipe can be laid in the same structure as the water supply pipes 81 and 82 described above. can

[Brief explanation of drawings]

1 and 2 are the first and second embodiments of the present invention, respectively.
1 is a schematic cross-sectional view of an ion plating apparatus showing an embodiment of the present invention. 1... Substrate to be deposited 2...
Vacuum chamber 3.3A, 3B...Cylindrical mount 10...Matching circuit 11...Group/High frequency coil 31.36...Tip 32.37...Group/Full Outer end 331.332/Old...O-ring 341...Spacer 354.355.356.357.381.382.3
83.384...Introduction terminal 4 with airtightness
...Evaporation source 41. Old...Electron gun 5...
... Vapor deposition material 6.6A, 6B ... Drive motor (drive means)
61.63...Rack 71.75...Fixed power supply line 74.76...Flexible power supply line (fixed refrigerant pipe) 8
1... Fixed water supply pipe 82... Flexible water supply pipe (flexible refrigerant pipe) 91.
...Linear potentiometer 92 ...Electron gun power supply 93 ... Film thickness monitor 94 ... Film thickness sensor 95 ... Electrode 96 ... ...DC power supply Figure 1'IJ2 Figure

Claims (2)

[Claims] (1) An evaporation source is provided in the vacuum chamber to evaporate and supply the evaporation material, and a curved evaporation target substrate is passed directly above the evaporation source, and between the evaporation source and the evaporation substrate,
In an ion plating apparatus that is provided with a high-frequency coil that ionizes evaporated deposition material and accelerates the ionized deposition material toward the deposition substrate using an electric field,
a cylindrical mount penetrating the wall of the vacuum chamber, supported airtightly and movably in the axial direction, and having the evaporation source at its tip; A driving means for moving the evaporation target substrate forward and backward in opposing directions so that the distance from the opposing part is always constant, and supplies a fixed power supply line connected to the evaporation source and a refrigerant for cooling the evaporation source. A fixed refrigerant pipe is hermetically inserted into the cylindrical mount, and these are connected to the flexible power supply line and the flexible refrigerant pipe at the outdoor end of the cylindrical mount, respectively, and the fixed refrigerant pipe is connected adjacent to the cylindrical mount. Another cylindrical pedestal is provided at least one cylindrical pedestal is provided, penetrates through the wall of the vacuum chamber, is supported airtightly and movably in the axial direction, and is provided with the above-mentioned high-frequency coil at its tip; The other cylindrical pedestal is provided with a driving means that moves according to the shape of the cylindrical pedestal, and the tip of the other cylindrical pedestal is formed into an airtight box shape into which air is introduced. A matching circuit is housed therein, a fixed power supply line connected to the matching circuit is inserted into the other cylindrical mount, and this is connected to the flexible power supply line at the outdoor end of the cylindrical mount. Ion plating equipment. (2) A patent claim in which the cylindrical mount and the other cylindrical mount are shared by an integrated cylindrical mount, the evaporation source and the high-frequency coil are provided on the cylindrical mount, and the matching circuit is housed within the tip of the mount. The ion plating apparatus according to item 1.