KR20200081187A - Film forming apparatus, film forming method and manufacturing method of electronic device - Google Patents

Abstract

An objective of the present invention is to suppress quality degradation of sputtering even if sputtering is performed while moving a sputtering area in a chamber having a non-uniform pressure distribution. A film forming apparatus (1) comprises: a chamber (10) in which a film forming object (6) and a target (2) are arranged; and a moving means (moving base driving device (12)) to move a sputtering area (A1) for generating sputter particles from the target (2) in the chamber (10). The film forming apparatus (1) deposits the sputter particles on the film forming object (6) to form a film while moving the sputtering area (A1) by the moving means. The film forming apparatus (1) further comprises a pressure adjustment means (exhaust means (15), gas introduction means (16)) to adjust the pressure in the chamber (10). The pressure adjustment means adjusts the pressure in the chamber (10) in accordance with the position of the sputtering area (A1) in the chamber (10).

Description

Film forming apparatus, film forming method, and manufacturing method of electronic device {FILM FORMING APPARATUS, FILM FORMING METHOD AND MANUFACTURING METHOD OF ELECTRONIC DEVICE}

The present invention relates to a film forming apparatus, a film forming method, and a method for manufacturing an electronic device.

As a method of forming a thin film made of a material such as a metal or a metal oxide on a film-forming object such as a substrate or a laminate formed on a substrate, a sputtering method is widely known. The film-forming apparatus for forming a film according to the sputtering method has a configuration in a vacuum chamber in which a target made of a film-forming material and a film-forming object are disposed to face each other. When a voltage is applied to the target, plasma is generated in the vicinity of the target, and sputtered particles are released from the target surface by ionized inert gas elements colliding with the target surface, and the sputtered particles are deposited and deposited on the film-forming object. In addition, a magnetron sputtering method is also known in which a magnet is disposed on the back surface of a target (inside of the target in the case of a cylindrical target), and the electron density in the vicinity of the cathode is increased by the generated magnetic field to efficiently sputter.

As a conventional film-forming apparatus of this kind, for example, the thing as described in patent document 1 is known. The film-forming apparatus of patent document 1 forms a film by moving a target parallel to the film-forming surface of a film-forming object.

Japanese Patent Publication No. 2015-172240

Here, the pressure in the chamber of the film forming apparatus may not be uniform. That is, the pressure distribution in the chamber may be non-uniform, such as high pressure in the vicinity of the gas inlet port for introducing the sputter gas and low pressure in the vicinity of the exhaust port connected to the vacuum pump. When sputtering is performed while moving the cathode in the chamber as in Patent Document 1, the sputtering region from which sputter particles are emitted from the surface of the target also moves relative to the chamber. Therefore, as described above, when sputtering is performed while moving the sputtering region under conditions where the pressure distribution in the chamber is non-uniform, the pressure around the sputtering region changes between sputtering processes. Since the average free stroke of sputtered particles is inversely proportional to the pressure, the film formation rate will change if the pressure is different because the pressure is long in the low pressure region and the high molecular density is short in the high pressure region. As a result, there is a concern that the quality of the film formation decreases, for example, unevenness in film thickness or film quality. However, Patent Document 1 does not describe the control of film formation according to the pressure distribution of the sputter gas in the chamber.

This invention was made|formed in view of the said subject, The objective is to suppress the deterioration of sputtering quality, even when sputtering is performed while moving a sputtering area in a chamber which has a nonuniform pressure distribution.

A film forming apparatus as an aspect of the present invention includes a chamber in which a film forming object and a target are disposed, and moving means for moving a sputtering region generating sputter particles from the target within the chamber, wherein the A film forming apparatus that deposits and deposits the sputter particles on the film forming object while moving the sputtering area, and includes pressure adjusting means for adjusting the pressure in the chamber, and the pressure adjusting means is located at the position of the sputtering area in the chamber. It is characterized by adjusting the pressure in the chamber according to.

The film forming method as an aspect of the present invention is a film forming method using a chamber in which a film-forming object and a target are disposed, while the sputtering region generating sputter particles from the target is moved in the chamber, and the sputter particles are transferred to the film-forming object. And a deposition step of depositing and forming a film, wherein the pressure in the chamber is adjusted according to the position of the sputtering region in the chamber.

A method of manufacturing an electronic device as an aspect of the present invention is a method of manufacturing an electronic device, comprising: a film-forming object, a process of disposing a target in the chamber to face the film-forming object, and a sputtering region generating sputter particles from the target And a film forming step of depositing and depositing the sputter particles on the film forming object while moving in the chamber, wherein the film forming step adjusts the pressure in the chamber according to the position of the sputtering region in the chamber. It is characterized by.

According to the present invention, even when sputtering is performed while moving the sputtering region in a chamber having a non-uniform pressure distribution, deterioration in sputtering quality can be suppressed.

[Fig. 1] (a) is a diagram schematically showing the configuration of a film forming apparatus according to the first embodiment, and (b) is a side view of (a).
2 is a perspective view schematically showing the configuration of a magnet unit.
3 is a flowchart showing the flow of pressure adjustment in the first embodiment.
Fig. 4 (a) is a diagram schematically showing the configuration of the film forming apparatus of the second embodiment, and (b) to (d) are diagrams showing the movement of the magnet unit.
It is a figure which shows typically the structure of the film-forming apparatus of Embodiment 3.
6 is a diagram schematically showing the configuration of the film forming apparatus of the sixth embodiment, (a) shows a case where the TS distance is small, and (b) shows a case where the TS distance is large.
It is a figure which shows typically the general layer structure of an organic EL element.

Hereinafter, embodiments of the present invention will be described in detail. However, the following embodiments are merely illustrative of preferred structures of the present invention, and the scope of the present invention is not limited to such configurations. In the following description, the hardware configuration and software configuration of the apparatus, processing flow, manufacturing conditions, dimensions, materials, shapes, and the like, unless otherwise specified, are intended to limit the scope of the present invention to them only. It is not.

The present invention is very suitable for forming a thin film, particularly an inorganic thin film, on a film-forming object such as a substrate. The present invention can also be grasped as a film forming apparatus, a control method thereof, and a film forming method. The present invention can also be grasped as an apparatus for manufacturing an electronic device or a method for manufacturing an electronic device. The present invention can also be grasped as a program for executing a control method on a computer or as a storage medium storing the program. The storage medium may be a non-transitory storage medium readable by a computer.

<Embodiment 1>

Referring to the drawings, the basic configuration of the film forming apparatus 1 according to the first embodiment will be described. The film forming apparatus 1 is used for depositing and forming a thin film on a substrate (including a laminate formed on a substrate) in the manufacture of various electronic devices such as semiconductor devices, magnetic devices, electronic parts, and optical parts. Is used. More specifically, the film forming apparatus 1 is preferably used in the manufacture of electronic devices such as light emitting elements, photoelectric conversion elements, and touch panels. Among them, the film forming apparatus 1 according to the present embodiment is particularly preferably used in the production of organic light emitting elements such as organic EL (ErectroLuminescence) elements, and organic photoelectric conversion elements such as organic thin film solar cells. The electronic device in the present invention includes a display device (e.g., an organic EL display device) equipped with a light emitting element, a lighting device (e.g., an organic EL lighting device), and a sensor (e.g., organic) equipped with a photoelectric conversion element. CMOS image sensor).

<Organic EL element>

7 schematically shows a general layer configuration of the organic EL element. The general organic EL device shown in FIG. 7 includes an anode 601, a hole injection layer 602, a hole transport layer 603, an organic light emitting layer 604, an electron transport layer 605, and electrons on a substrate (film-forming object 6). The injection layer 606 and the cathode 607 are formed in this order. The film forming apparatus 1 according to the present embodiment is suitably used for forming a layered film of a metal or metal oxide used for an electron injection layer or an electrode (cathode) by sputtering on an organic film. In addition, it is not limited to the film formation on the organic film, and as long as it is a combination of materials that can be formed by sputtering, such as a metal material or an oxide material, a laminated film can be formed on various surfaces. Furthermore, the present invention is not limited to the film formation using a metal material or an oxide material, and can also be applied to film formation using an organic material. Each layer to be formed can be arbitrarily formed by using a mask having a desired mask pattern during film formation.

<Device configuration>

1(a) is a schematic diagram showing the configuration of the film forming apparatus 1 of the present embodiment. The film-forming apparatus 1 can accommodate the film-forming object 6 as a substrate therein. The film-forming apparatus 1 is a magnet unit that is disposed at a position facing the film-forming object 6 with the target 2 interposed between the chamber 10 in which the target 2 is disposed and the target 2 in the chamber 10. (3). In this embodiment, the target 2 is cylindrical, and together with the magnet unit 3 disposed therein, the rotating cathode unit 8 serving as a film forming source (hereinafter simply referred to as "cathode unit 8") There are cases). The term "cylindrical" as used herein does not only mean a mathematically rigid cylinder, but also includes that the busbar is not a straight line, but a curved line, and a section perpendicular to the central axis is not a mathematically rigid "circle". That is, the target 2 in this invention should just be a substantially cylindrical shape which can rotate about a center axis.

Before the film formation is performed, the film formation object 6 is aligned with the mask 6b and held by the holder 6a. The holder 6a may be provided with an electrostatic chuck for adsorbing and holding the film-forming object 6 by electrostatic force, or may be provided with a clamp mechanism for holding the film-forming object 6. In addition, the holder 6a may be provided with a magnet plate for pulling the mask 6b from the back surface of the film formation object 6. In the film forming step, the target 2 of the cathode unit 8 moves in a direction orthogonal to the rotational central axis while rotating around the rotational central axis. On the other hand, unlike the target 2, the magnet unit 3 does not rotate, and always generates a leakage magnetic field on the surface side of the target 2 facing the film-forming object 6, and the electron density in the vicinity of the target 2 Sputter with high. The region where the leakage magnetic field is generated is the sputtering region A1 in which sputter particles are generated. The sputtering area A1 of the target 2 moves with respect to the chamber 10 together with the movement of the cathode unit 8, thereby sequentially forming a film over the entire film forming object 6. Here, the magnet unit 3 is assumed not to rotate, but is not limited to this, and the magnet unit 3 may also rotate or swing.

The film-forming object 6 held by the holder 6a is horizontally arranged on the ceiling wall 10d side of the chamber 10. The film-forming object 6 is carried in, for example, from one gate valve 17 provided on the side wall of the chamber 10 to form a film, and after film formation, the gate valve 18 installed on the other side wall of the chamber 10 It is taken out from. In the drawing, a depot-up is formed in which the film-forming object 6 is formed in a state where the film-forming surface faces downward in the direction of gravity. However, the film-forming object 6 is disposed on the bottom side of the chamber 10 and the cathode unit 8 is disposed above it, so that the film-forming surface of the film-forming object 6 is formed in a state where the film-forming surface 6 faces upward in the direction of gravity, The configuration of depot down may be used. Alternatively, the film formation may be performed in a state in which the film-forming object 6 is vertically standing, that is, in a state in which the film-forming surface of the film-forming object 6 is parallel to the direction of gravity. In addition, the film-forming object 6 may be carried into the chamber 10 by one of the gate valve 17 and the gate valve 18 to form a film, and may be taken out from the gate valve that has passed through the film during the carrying-in.

As shown in Fig. 1(a), in the present embodiment, the inlet openings 41, 42 connected to the gas introduction means 16 (to be described later) are disposed at both ends in the X-axis direction of the chamber 10, and in the central portion. An exhaust port 5 is connected to the exhaust means 15 (to be described later).

Fig. 1(b) is a side view of the film forming apparatus 1 of Fig. 1(a) seen from another direction. The cathode unit 8 is supported by a support block 210 and an end block 220 whose both ends are fixed on the mobile table 230. The cylindrical target 2 of the cathode unit 8 is rotatable, and the magnet unit 3 therein is supported in a fixed state.

The moving table 230 is supported so as to be movable along a pair of guide rails 250 through a conveying guide 240 such as a linear bearing. The cathode unit 8 moves along the guide rail 250 in the movement region facing the film formation object 6 while rotating around the rotation axis while the rotation axis N is stretched in the Y-axis direction ( White arrow in Fig. 1(a)).

The target 2 is rotationally driven by the target drive device 11 which is a rotation means. As the target drive device 11, a general drive mechanism having a drive source such as a motor and transmitting power to the target 2 via a power transmission mechanism can be used. The target driving device 11 may be mounted on the support block 210 or the end block 220.

The mobile table 230 is driven along the guide rail 250 by the mobile table drive device 12. In this embodiment, as the moving table 230 moves, the cathode unit 8 including the target 2 moves within the chamber 10, and accordingly, the sputtering area A1 moves within the chamber 10. Therefore, the moving table drive apparatus 12 in this embodiment is a moving means which moves the sputtering area A1 in the chamber 10. As for the movable table drive device 12, various well-known motion mechanisms, such as a screw feed mechanism using a ball screw etc. which converts rotational motion of a rotation motor into drive force, a linear motor, can be used. The moving table drive device 12 in the illustrated example moves the target in a direction (X-axis direction) that intersects the long longitudinal direction (Y-axis direction) of the target. You may provide the anti-seizure plates 261 and 262 before and after the target movement direction of the moving table 230 for moving the sputtering area. In addition, the guide rail 250, the moving table 230, and the control unit 14 may be included in the moving means.

The target 2 functions as a source of a film-forming material for forming a film on the film-forming object 6. As a material of the target 2, for example, metal elements such as Cu, Al, Ti, Mo, Cr, Ag, Au, Ni, or alloys or compounds containing these metal elements are exemplified. Alternatively, a transparent conductive oxide such as ITO, IZO, IWO, AZO, GZO or IGZO may be used. A layer of the backing tube 2a made of another material is formed inside the layer on which the film forming material is formed. The power supply 13 is connected to the backing tube 2a via a target holder (not shown). At this time, the target holder (not shown) and the backing tube 2a function as a cathode that applies a bias voltage (for example, a negative voltage) applied from the power source 13 to the target 2. However, a bias voltage may be applied to the target itself without providing a backing tube. Also, the chamber 10 is grounded.

The magnet unit 3 forms a magnetic field in the direction toward the film formation object 6. As shown in Fig. 2, the magnet unit 3 is provided with a center magnet 31 extending in a direction parallel to the axis of rotation of the cathode unit 8, and a center magnet 31 surrounding the center magnet 31 around the polarity. A magnet 32 and a yoke plate 33 are provided. It can also be said that the center magnet 31 extends in a direction crossing the movement direction of the cathode unit 8. The peripheral magnet 32 is constituted by a pair of straight portions 32a and 32b extending parallel to the center magnet 31 and rotating portions 32c and 32d connecting both ends of the straight portions 32a and 32b. It is done. The magnetic field formed by the magnet unit 3 has a magnetic force line that returns from the magnetic pole of the central magnet 31 to the linear portions 32a, 32b of the peripheral magnet 32 in a loop shape. As a result, a toroidal magnetic field tunnel extending in the long longitudinal direction of the target 2 is formed near the surface of the target 2. Electrons are captured by this magnetic field, and plasma is concentrated in the vicinity of the surface of the target 2, thereby improving the efficiency of sputtering. The region of the surface of the target 2 where the magnetic field of this magnet unit leaks is shown in FIG. 1(a) as the sputtering region A1 in which sputter particles are generated. The gas pressure in the vicinity of the sputtering region A1 affects the emergency distance of the particles. In addition, the range in the vicinity of the sputtering region A1 is not necessarily limited by the distance, and may be appropriately defined in accordance with the effect on the desired film forming accuracy.

Gas introduction means 16 and exhaust means 15 are connected to the chamber 10. The gas introduction means 16 and the exhaust means 15 function as a pressure adjusting means, and under the control of the control unit 14, the introduction or exhaust of sputter gas is performed to adjust the pressure inside the chamber or to predetermined the inside of the chamber. The pressure should be maintained. The sputtering gas is, for example, an inert gas such as argon or a reactive gas such as oxygen or nitrogen. The gas introduction means 16 of this embodiment introduces sputter gas through the introduction ports 41 and 42 provided on both sides of the chamber 10. Moreover, the exhaust means 15, such as a vacuum pump, exhausts from the inside of the chamber 10 to the outside through the exhaust port 5. Further, the control unit 14 that controls the gas introducing means 16 and the exhaust means 15 may be considered as a pressure adjusting means, and at least one of the gas introducing means 16 and the exhaust means 15 is called a pressure adjusting means. You may think. Alternatively, it may be considered as a pressure adjusting means including at least one of the gas introduction means 16 and the exhaust means 15 and the control unit 14. Details will be described later, but in the present embodiment, the pressure adjusting means adjusts the pressure in the chamber 10 according to the position of the sputtering region A1 in the chamber 10.

The gas introducing means 16 is composed of a supply source such as a gas cylinder, a piping system connecting the supply source and the inlets 41 and 42, various vacuum valves installed in the piping system, a mass flow controller and the like. The gas introduction means 16 is able to adjust the gas introduction amount by a flow control valve of the mass flow controller. The flow control valve is configured to be electrically controllable, such as a solenoid valve. In addition, the position where the introduction ports 41 and 42 are arranged is not limited to both side walls of the chamber, and may be either side walls or a bottom wall or a ceiling wall. In addition, the pipe may extend into the chamber, and the introduction port may open into the chamber 10. In addition, a plurality of the introduction ports 41 and 42 of each side wall may be arranged in the long longitudinal direction (Y-axis direction) of the target 2, respectively.

The exhaust means 15 includes a vacuum pump, a piping system connecting the vacuum pump and the exhaust port 5, and an electrically controllable flow rate control valve such as a conductance valve provided in the piping system, and adjusts the displacement by the control valve It is possible. The position where the exhaust port 5 is arranged is not limited to the central portion of the bottom wall as in the illustrated example, and may be an end of the bottom wall (a position near the side wall), a side wall, or a ceiling wall. In addition, the pipe may extend into the chamber, and the exhaust port 5 may open into the chamber 10.

In the illustrated example, the introduction ports 41 and 42 are provided on the side wall 10b at the starting end side and the side wall 10a at the end side of the moving area where the cathode unit 8 moves. , The exhaust port 5 is provided on the bottom wall 10c side of the central position of the moving area of the mobile table. In the film forming process (sputter process), film formation is performed while introducing sputter gas from the introduction port 4 and evacuating from the exhaust port 5.

The film forming apparatus 1 has a pressure sensor 7 installed on the wall of the chamber 10 and capable of acquiring the pressure in the chamber 10. The pressure sensor 7 may be considered as a pressure acquisition means, or may be considered as a pressure acquisition means including a pressure sensor and a control unit 14. The pressure sensor 7 transmits the obtained pressure value to the control unit 14. As the pressure sensor 7, various vacuum gauges such as a diaphragm vacuum gauge such as a capacitance manometer, a thermal conductivity vacuum gauge such as a Pirani vacuum gauge or a thermocouple vacuum gauge, and a crystal friction vacuum gauge can be used. In addition, the pressure sensor 7 only needs to be able to measure the pressure in the chamber 10, the installation position is arbitrary, and the pressure sensor 7 may be provided to be movable relative to the chamber 10. As will be described later, in the present embodiment, the pressure in the chamber 10 is adjusted by using the pressure in the chamber 10 measured by the pressure sensor 7 as an index value, and the pressure in the vicinity of the sputtering region A1 is adjusted. do. In addition, when the pressure sensor 7 is installed to be movable relative to the chamber 10, information corresponding to the index pressure value Pi and the pressure distribution information is stored in the storage unit for each position of the pressure sensor 7 You can do it.

<Deposition method>

Next, a film forming method using the film forming apparatus 1 will be described. The film forming method according to the present embodiment includes a film forming process (sputter process). In the film forming step, the target driving device 11 is driven by the control unit 14 to rotate the target 2, and a bias voltage is applied to the target 2 from the power source 13. While applying the bias voltage to the target 2 while rotating the target 2, the mobile platform driving device 12 is driven, and the cathode unit 8 is set at a predetermined speed from the start of the moving area at a predetermined direction. To move. When a bias voltage is applied to the target 2, plasma is concentrated in the vicinity of the surface of the target 2 facing the film formation object 6, and gas ions in a cation state in the plasma sputter the target 2, Scattered sputter particles are deposited on the object to be formed 6. As the cathode unit 8 moves, sputter particles are sequentially deposited from the upstream side to the downstream side in the direction of movement of the cathode unit 8. Thereby, a film is formed on the object to be formed. In this embodiment, the pressure in the chamber 10 is adjusted according to the position of the cathode unit 8 while moving the sputtering region A1 in the film forming process.

<Pressure adjustment>

Next, the pressure adjustment during the film-forming process by the film-forming apparatus 1 which concerns on this embodiment is demonstrated with reference to drawings. 3 is a flowchart showing the flow of pressure adjustment.

After starting the film forming process, in step S101, the control unit 14 acquires a target pressure value Pt that is a target value of the pressure in the vicinity of the sputtering region A1 during film formation. The target pressure value Pt may be a value specified by the user of the film forming apparatus 1, and the control unit 14 may accept input from the user via an input unit (not shown). In the film forming apparatus 1, the pressure in the chamber 10 is such that the pressure (local pressure value) in the vicinity of the sputtering region A1 is always the target pressure value Pt regardless of the position of the sputtering region A1 in the chamber 10. Adjust.

In step S102, the control unit 14 acquires information on the position of the cathode unit 8 in the chamber 10. Information on the position of the cathode unit 8 in the chamber 10 can be obtained, for example, from the mobile platform drive device 12.

In step S103, the control unit 14 determines the control pressure value Pc with reference to a table or a formula stored in the storage unit (not shown). The control pressure value Pc is a value equal to or different from the target pressure value Pt, and is a pressure value measured by the pressure sensor 7 when the pressure in the vicinity of the sputtering region A1 reaches the target pressure value Pt. That is, by controlling at least one of the exhaust means 15 and the gas introduction means 16 so that the pressure value measured by the pressure sensor 7 becomes the control pressure value Pc, the pressure in the vicinity of the sputtering area A1 is set to the target pressure value Pt. Can be done with

In the table or equation stored in the storage unit (not shown), the pressure distribution in the chamber 10 at that time for each pressure value (hereinafter also referred to as an index pressure value Pi) measured by the pressure sensor 7 Information (a table or equation in which the position of the cathode unit 8 and the pressure value in the vicinity of the cathode unit 8 at that position are correlated) is included. That is, the storage unit (not shown) stores a plurality of pressure distribution information respectively corresponding to a plurality of different index pressure values Pi. In step S103, the control unit 14 refers to the plurality of tables or equations, and the pressure distribution information at which the pressure value at the position of the cathode unit 8 obtained in step S102 becomes the target pressure value Pt. Choose. Then, the index pressure value Pi corresponding to the selected table or equation is set as the control pressure value Pc. Further, if there is no pressure distribution information in which the pressure value at the position of the cathode unit 8 obtained in step S102 is the target pressure value Pt, the pressure distribution information whose pressure value is closest to the target pressure value Pt is selected. May be

The pressure distribution information is acquired in advance by installing a moving pressure sensor (not shown) in the cathode unit 8 and acquiring pressure while moving the moving pressure sensor (not shown) together with the cathode unit 8 Put it. Alternatively, a plurality of pressure sensors are installed in the chamber 10, and pressure is acquired using a plurality of pressure sensors, so that they are acquired in advance. Alternatively, it may be acquired in advance by simulation based on the shape of the chamber 10, the position of the exhaust ports 5, the positions of the introduction ports 41, 42, and the like. The storage unit (not shown) stores a plurality of pieces of this pressure distribution information while changing the index pressure value Pi.

In step S104, the control unit 14 adjusts the pressure in the chamber 10 based on the control pressure value Pc determined in step S103. Specifically, at least one of the exhaust means 15 and the gas introduction means 16 is controlled so that the pressure value measured by the pressure sensor 7 becomes the control pressure value Pc. The control pressure value Pc corresponds to the first pressure value. As described above, by setting the pressure value measured by the pressure sensor 7 as the control pressure value Pc, the pressure in the vicinity of the sputtering region A1 can be set as the target pressure value Pt. Thereby, sputtering is performed while always maintaining the pressure in the vicinity of the sputtering area A1 at the target pressure value Pt.

In step S105, the control unit 14 determines whether the film formation of the film formation target object 6 has been completed. As a result of the determination, if the film forming is not completed, the process proceeds to step S106, and the film forming continues while the cathode unit 8 is moved and pressure adjusted.

The method of determining the control pressure value Pc based on the target pressure value Pt and the cathode position in step S103 is not limited to the above-described method. For example, in the storage unit (not shown), for each target pressure value Pt, the index pressure value Pi is such that the position of the cathode unit 8 and the pressure in the vicinity of the sputtering region A1 at that position become the target pressure value Pt. You may also remember the tables or formulas to which they are associated. In this case, the control unit 14 can more easily determine the control pressure value Pc for each cathode unit 8 by referring to this table or equation. Alternatively, when the target pressure value Pt is determined in advance, the storage unit (not shown) may store only one of the above-described tables or equations. That is, in this case, the control unit 14 adjusts the pressure based on the position information of the cathode unit 8 and the control pressure value Pc predetermined according to the position of the cathode unit 8.

Alternatively, the above table or formula stored in the storage unit (not shown) is used to set the position of the cathode unit 8 and the pressure value in the vicinity of the cathode unit 8 at that position as the target pressure value Pt. At least one of the control amounts of the exhaust means 15 and the gas introduction means 16 may be stored. As said control amount, for example, the opening degree of the flow rate control valve arrange|positioned between the exhaust means 15 and the exhaust port 5, and the supply source and introduction ports 41 and 42 of the gas introduction means 16 The opening degree etc. of the flow control valve arrange|positioned between are mentioned. In this case, instead of determining the control pressure value Pc in step S103, the control unit 14 determines the control amount of at least one of the exhaust means 15 and the gas introduction means 16. In addition, in step S104, the control unit 14 controls at least one of the exhaust means 15 and the gas introduction means 16 with the control amount determined in step S103.

In general, since an uneven pressure distribution exists inside the vacuum chamber, when sputtering is performed while moving the sputtering region in the vacuum chamber, the pressure in the vicinity of the sputtering region fluctuates. Therefore, unevenness occurs in the film thickness and film quality of the film to be formed. On the other hand, in the present embodiment, as described above, the pressure in the chamber 10 is adjusted according to the position of the sputtering region A1 in the chamber 10. Thereby, since the pressure in the vicinity of the sputtering region A1 can always be kept substantially constant, even if the pressure distribution of the gas inside the chamber is non-uniform, the film formation rate can be kept substantially constant. As a result, unevenness in the film thickness and film quality of the film to be formed on the film-forming object 6 can be reduced, and the deterioration in sputtering quality can be suppressed.

<Embodiment 2>

Next, Embodiment 2 of the present invention will be described. Hereinafter, description will be made focusing on differences from the first embodiment, and the same reference numerals are assigned to the same components and the description is simplified.

4(a) shows the film forming apparatus 1 of the present embodiment. In the film forming apparatus 1, a planar cathode unit 308 using a flat target 302 is used, rather than a rotating cathode unit using a cylindrical target. The planar cathode unit 308 has a target 302 arranged in parallel with the film-forming object 6, and a magnet unit 3, which is a magnetic field generating means, on the opposite side to the film-forming object 6 of the target 302 Are deployed. In addition, a backing plate 302a to which electric power is applied from the power source 13 is provided on a surface of the target 302 opposite to the film formation object 6. When electric power is applied to the backing plate 302a, sputter particles are emitted from the sputtering region A1. The planar cathode unit 308 is provided on the upper surface of the mobile table 230.

In the film-forming process, the planar cathode unit 308 is orthogonal to the long longitudinal direction of the target 302 along the guide rail 250 on the moving area facing the film-forming surface of the film-forming object 6 (In the drawing, move in the X-axis direction). The vicinity of the surface of the target 302 facing the film formation target 6 is a sputtering region A1 in which electron density can be increased by a magnetic field generated by the magnet unit 3 and sputter particles are generated. In the film forming step, the sputtering region A1 moves along the film forming surface of the film forming object 6 along with the movement of the planar cathode unit 308 to sequentially form a film on the film forming object 6.

4(b) to 4(d), in the planar cathode unit 308, the magnet unit 3 may be movable relative to the target 302. In this way, the sputtering region A1 can be made relatively out of position relative to the target 302, so that the utilization efficiency of the target 302 can be increased.

In this embodiment, as in the first embodiment, the pressure in the chamber 10 is adjusted according to the position of the sputtering area A1 (in this embodiment, depending on the position of the planar cathode unit 308). Thereby, even in the case of using the planar cathode unit 308 as in the present embodiment, the pressure in the vicinity of the sputtering region A1 can always be kept approximately constant. For this reason, even if the pressure distribution of the gas inside the chamber is non-uniform, the film-forming rate can be kept substantially constant. As a result, unevenness in the film thickness and film quality of the film produced on the film forming target 6 can be reduced, and the deterioration in sputtering quality can be suppressed.

<Embodiment 3>

Next, Embodiment 3 of the present invention will be described. Hereinafter, description will be made focusing on differences from the above-described embodiments, and the same reference numerals are assigned to the same components and the description is simplified.

5 shows the film-forming apparatus 1 of this embodiment. 4(b) to 4(d), the magnet unit 3 in the planar cathode unit can be moved relative to the target 302. In this embodiment, the flat plate-shaped target 402 is larger than the film-forming object 6 in both the X-axis direction and the Y-axis direction, and is fixedly provided with respect to the chamber 10. In addition, the magnet unit 3 as a magnetic field generating means moves relative to the target 402 fixed to the chamber 10 (ie, relative to the chamber 10). In response to this, the sputtering region A1 through which the target particles of the target 402 are emitted also moves relative to the film formation target 6.

The target 402 is disposed at the boundary between the vacuum region and the atmospheric pressure region, and the magnet unit 3 is placed in the atmosphere outside the chamber 10. That is, as shown in FIG. 5, the target 402 is disposed to hermetically close the opening 10c1 provided in the bottom wall 10c of the chamber 10. The target 402 faces the interior space of the chamber 10 and faces the film formation object 6. The backing plate 402a to which electric power is applied from the power source 13 is provided on the surface of the target 402 opposite to the film formation target 6, and the backing plate 402a faces the external space. In addition, although it is assumed here that the target 402 is disposed at the boundary between the vacuum region and the atmospheric pressure region, the present invention is not limited thereto, and other members may be provided between the target 402 and the atmospheric pressure region, and the target 402 may be provided. You may arrange|position on the bottom wall 10c of the chamber 10.

The magnet unit 3 is disposed outside the chamber 10, and the pressure sensor 7 is disposed within the chamber 10. The magnet unit 3 is supported by the magnet unit moving device 430 outside the chamber 10 and is movable along the target 402 in the X-axis direction. The magnet unit 3 is driven by the magnet driving device 121 driving the magnet unit moving device 430. The magnet unit moving device 430 is a device for linearly guiding the magnet unit 3 in the X-axis direction, and although not particularly illustrated, guides such as a movable platform supporting the magnetic unit 3 and a rail guiding the movable platform are provided. And the like. The sputtering area A1 moves in the X-axis direction by the movement of the magnet unit 3. The magnet unit 3 is controlled and moved by the control unit 14, and the control unit 14 acquires the pressure value measured by the pressure sensor 7 at any time.

In the present embodiment, the inlet port 42 is disposed on the side wall 10b on the starting end side of the moving region where the cathode unit 8 moves, and the exhaust port 5 is disposed on the side wall 10a on the end side. Therefore, in the chamber 10, a pressure distribution in which the pressure is high in the vicinity of the side wall 10b at the starting end and the pressure is low in the vicinity of the side wall 10a at the termination end exists. In addition, the position and number of the inlet and the exhaust ports are not limited to this example.

In the present embodiment, as in the above-described respective embodiments, the pressure in the chamber 10 is adjusted according to the position of the sputtering region A1 (in this embodiment, depending on the position of the magnet unit 3). Thereby, even in the case of this embodiment, the pressure in the vicinity of the sputtering area A1 can always be kept substantially constant. Therefore, even if the pressure distribution of the gas inside the chamber is non-uniform, the film formation rate can be maintained substantially constant. As a result, unevenness in the film thickness and film quality of the film produced on the film forming target 6 can be reduced, and the deterioration in sputtering quality can be suppressed.

[Embodiment 4]

Next, Embodiment 4 of the present invention will be described. Hereinafter, description will be given focusing on differences from the above-described respective embodiments, and the same reference numerals are assigned to the same components to simplify the description.

The structure of the film-forming apparatus 1 of this embodiment is the same as that of the film-forming apparatus 1 of the first embodiment. In this embodiment, in addition to adjusting the pressure in the chamber during the film forming step, the electric power supplied to the target 2 is adjusted.

The film forming apparatus 1 has power supply means for supplying power to the target 2. As described above, the bias voltage is applied to the target 2 from the power source 13 via the backing tube 2a or directly, whereby power is supplied. Therefore, the power supply means in this embodiment includes a power source 13. In addition, since the power source 13 is controlled by the control unit 14 and supplies the electric power indicated by the control unit 14 to the target 2, the control unit 14 is supplied to the power supply means in this embodiment. You may also think about it. Alternatively, the power supply means may not include the power source 13 but may include only the control unit 14.

In the film forming process, the power supply means changes the power supplied to the target 2. Specifically, in the configuration of FIG. 1, the power supply means supplies power supplied to the target 2 at the starting and ending sides of the moving path of the cathode unit 8 having a relatively high pressure in the vicinity of the sputtering area A1. Change it to grow. Further, the electric power supplied to the target 2 is changed so that the pressure in the vicinity of the sputtering region A1 becomes small in the center portion of the movement path of the cathode unit 8 which is relatively low. That is, when the pressure near the sputtering area A1 is the first pressure, the first power is supplied to the target 2. Then, when the pressure in the vicinity of the sputtering region A1 is a second pressure higher than the first pressure, second power greater than the first power is supplied.

As a result, when the pressure in the vicinity of the sputtering region A1 is high and the average free stroke of the sputtering particles is shortened, larger electric power is supplied, so that the amount of sputtering particles emitted from the sputtering region A1 increases. Further, when the pressure in the vicinity of the sputtering region A1 is low and the average free stroke of the sputtering particles becomes long, smaller electric power is supplied, so the amount of sputtering particles emitted from the sputtering region A1 decreases. In this embodiment, by controlling the supply power in addition to the adjustment of the pressure in the chamber, it is possible to control the amount of sputter particles emitted in addition to controlling the average free stroke. As a result, the film-forming rate can be kept constant more easily than in the case of simply adjusting the pressure in the chamber. Therefore, also according to the present embodiment, it is possible to reduce the non-uniformity in the film thickness and film quality of the film produced on the film formation object 6, and suppress the deterioration in sputtering quality.

[Embodiment 5]

Next, Embodiment 5 of the present invention will be described. Hereinafter, description will be given focusing on differences from the above-described respective embodiments, and the same reference numerals are assigned to the same components to simplify the description.

The structure of the film-forming apparatus 1 of this embodiment is the same as that of the film-forming apparatus 1 of the first embodiment. In this embodiment, in addition to adjusting the pressure in the chamber during the film forming step, the movement speed of the sputtering region A1 is adjusted. In addition, the movement speed of the sputtering area A1 can be considered similar to the movement speed of the cathode unit 8 when the magnet unit 3 is fixed relative to the target 2. In addition, when the magnet unit 3 moves with respect to the target 2, the movement speed of the sputtering area A1 is considered to be the same as the combined speed of the movement speed of the cathode unit 8 and the movement speed of the magnet unit 3. Can.

In the film forming step, the moving means changes the moving speed of the sputtering region A1. Specifically, in the configuration of Fig. 1, the moving means changes the moving speed of the sputtering region A1 so that the pressure in the vicinity of the sputtering region A1 becomes smaller on the start and end sides of the movement path of the cathode unit 8, which is relatively high. Order. In addition, the movement speed of the sputtering region A1 is changed so that the pressure in the vicinity of the sputtering region A1 becomes large in the central portion of the movement path of the cathode unit 8 which is relatively low. That is, when the pressure in the vicinity of the sputtering area A1 is the first pressure, the sputtering area A1 is moved at the first moving speed. Then, when the pressure in the vicinity of the sputtering region A1 is a second pressure higher than the first pressure, the sputtering region A1 is moved at a second movement speed smaller than the first movement speed.

Thereby, when the pressure in the vicinity of the sputtering region A1 is high and the average free stroke of the sputtering particles is shortened, the time for the sputtering region A1 to stay in the region facing the predetermined region of the film formation object 6 becomes longer. In addition, when the pressure in the vicinity of the sputtering region A1 is low and the average free stroke of the sputtering particles is long, the time in which the sputtering region A1 stays within a region facing the predetermined region of the film formation object 6 is shortened. In this embodiment, in addition to the adjustment of the pressure in the chamber, the moving speed of the sputtering region A1 is adjusted, and in addition to controlling the average free stroke, it is possible to control the time for forming a film in a predetermined region of the film forming target 6. have. As a result, the film-forming rate can be kept constant more easily than in the case of simply adjusting the pressure in the chamber. Therefore, also according to the present embodiment, it is possible to reduce the non-uniformity in the film thickness and film quality of the film produced on the film formation object 6, and suppress the deterioration in sputtering quality.

[Embodiment 6]

Next, Embodiment 6 of the present invention will be described. Hereinafter, description will be given focusing on differences from the above-described respective embodiments, and the same reference numerals are assigned to the same components to simplify the description.

6 shows the film-forming apparatus 1 of this embodiment. The film forming apparatus 1 of the present embodiment forms a film for moving the holder 6a holding the film forming object 6 and the mask 6b up and down in the normal direction of the film forming surface of the film forming object 6. The object lifting mechanism 640 is provided. The film-forming object lifting mechanism 640 is provided on the ceiling wall 10d of the chamber 10. The film-forming object lifting mechanism 640 includes a linearly moving ball screw 642 that receives or transmits power from a driving source such as a motor to raise or lower the holder 6a. The distance (TS) between the target (T:Target) and the substrate (S:Substrate), which is a film-forming target, is driven by the direct movement of the ball screw (642) under control of the control unit (14) and the holder (6a) moving up and down. Distance). In addition, the structure of the film-forming object lifting mechanism is not limited to the illustrated example, and may be one that can change the T-S distance according to an instruction from the control unit 14 or as prescribed.

Thus, the film forming apparatus 1 of this embodiment has T-S distance changing means for changing the T-S distance. In addition, in this embodiment, in addition to adjusting the pressure in the chamber during the film forming step, the T-S distance is adjusted.

In the film forming step, the T-S distance changing means changes the T-S distance. Specifically, in the configuration of Fig. 6, the TS distance changing means changes the TS distance so that the pressure in the vicinity of the sputtering area A1 becomes smaller on the start and end sides of the movement path of the relatively high cathode unit 8 ( Fig. 6(a)). Further, the T-S distance is changed so that the pressure in the vicinity of the sputtering area A1 becomes large in the center of the movement path of the cathode unit 8 (Fig. 6(b)). That is, when the pressure in the vicinity of the sputtering region A1 is the first pressure, the T-S distance is set to the first distance. In addition, when the pressure in the vicinity of the sputtering region A1 is a second pressure higher than the first pressure, the T-S distance is set to be a second distance smaller than the first distance.

Thereby, when the pressure in the vicinity of the sputtering region A1 is high and the average free stroke of the sputtering particles becomes short, the distance from the target surface to the film formation target 6 becomes short. Further, when the pressure in the vicinity of the sputtering region A1 is low and the average free stroke of the sputtering particles becomes long, the distance from the target surface to the film formation target 6 increases. In this embodiment, in addition to controlling the average free stroke by adjusting the TS distance in addition to the adjustment of the pressure in the chamber, the flight distance required for the sputter particles emitted from the sputtering region A1 to be deposited on the film formation object 6 in addition to controlling the average free stroke. Can be controlled. As a result, the film-forming rate can be kept constant more easily than in the case of simply adjusting the pressure in the chamber. Therefore, also according to the present embodiment, it is possible to reduce the non-uniformity in the film thickness and film quality of the film produced on the film formation object 6, and suppress the deterioration in sputtering quality.

In addition, in this embodiment, although the film-forming object lifting mechanism 640 which moves the film-forming object 6 in the normal direction of the film-forming surface of the film-forming object 6 as a T-S distance change means is shown, it is not limited to this. For example, as the T-S distance changing means, a mechanism for moving the target 2 or the cathode unit 8 in the normal direction of the film forming surface of the film forming object 6 may be used.

[Other embodiments]

In each of the above embodiments, the case where the cathode unit 8 or the planar cathode unit 308 is one is shown, but a plurality of such units may be arranged inside the chamber. Alternatively, even if there is only one such unit, a plurality of targets may be disposed in the unit. In addition, each component shown in each said embodiment is not limited to the example of each said embodiment, As long as there is no contradiction, you may combine it arbitrarily with each other.

1: film forming apparatus
2: Target
6: Tabernacle object
10: chamber
12: Mobile platform driving device (moving means)
14: control
15: exhaust means
16: Gas introduction means
A1: Sputtering area

Claims (21)

A chamber in which a film formation object and a target are disposed,
Moving means for moving the sputtering region generating sputter particles from the target within the chamber
Have
A film forming apparatus that deposits and deposits the sputter particles on the film forming object while moving the sputtering region by the moving means,
It has a pressure adjusting means for adjusting the pressure in the chamber,
The pressure adjusting means adjusts the pressure in the chamber according to the position of the sputtering region in the chamber.
A film forming apparatus, characterized in that. According to claim 1,
Pressure obtaining means for acquiring pressure in the chamber,
A storage section for storing a table or a formula in which the position of the sputtering region in the chamber, the pressure value acquired by the pressure obtaining means, and the local pressure value in the vicinity of the sputtering region are correlated.
Further comprising,
The pressure adjusting means adjusts the pressure in the chamber based on the position of the sputtering region in the chamber and the table or formula stored in the storage unit.
A film forming apparatus, characterized in that. According to claim 2,
The pressure obtaining means includes a pressure sensor fixedly disposed with respect to the chamber
A film forming apparatus, characterized in that. The method of claim 2 or 3,
The pressure adjusting means is a first pressure that is a pressure value acquired by the pressure obtaining means when the local pressure value becomes a predetermined pressure value based on the position of the sputtering region in the chamber and the table or the formula. A value is obtained, and the pressure in the chamber is adjusted so that the pressure value acquired by the pressure acquisition means becomes the first pressure value.
A film forming apparatus, characterized in that. According to claim 1,
Pressure obtaining means for acquiring pressure in the chamber,
Further provided is a storage section for storing a table or equation in which the position of the sputtering region in the chamber and the pressure value acquired by the pressure obtaining means correspond to each other when the local pressure value in the vicinity of the sputtering region is a predetermined pressure value. ,
The pressure adjusting means adjusts the pressure in the chamber based on the position of the sputtering region in the chamber and the table or formula stored in the storage unit.
A film forming apparatus, characterized in that. According to claim 1,
Further comprising a storage section for storing a table or a formula in which the position of the sputtering region in the chamber and the control amount by the pressure adjusting means are correlated,
The pressure adjusting means adjusts the pressure in the chamber based on the position of the sputtering region in the chamber and the table or formula stored in the storage unit.
A film forming apparatus, characterized in that. The method according to any one of claims 2 to 6,
The table or the formula is based on the pressure distribution in the chamber obtained in advance.
A film forming apparatus, characterized in that. The method according to any one of claims 1 to 7,
The moving means moves the sputtering area by moving the target in the chamber.
A film forming apparatus, characterized in that. The method of claim 8,
The moving means moves the sputtering area by moving the target in a direction crossing the long longitudinal direction of the target.
A film forming apparatus, characterized in that. The method of claim 8 or 9,
The moving means moves the sputtering region by moving the magnetic field generating means arranged to face the film formation object with the target interposed therebetween.
A film forming apparatus, characterized in that. The method according to any one of claims 1 to 7,
The target is fixed to the chamber to face the film-forming object, and the moving means moves the sputtering region by moving the magnetic field generating means disposed to face the film-forming object with the target interposed therebetween.
A film forming apparatus, characterized in that. The method according to any one of claims 1 to 10,
The target is cylindrical,
Further comprising rotating means for rotating the target
A film forming apparatus, characterized in that. The method according to any one of claims 1 to 11,
The target is a flat plate shape
A film forming apparatus, characterized in that. The method according to any one of claims 1 to 13,
Further comprising a power supply means for supplying power to the target,
The power supply means changes the power supplied to the target according to the position of the sputtering area in the chamber.
A film forming apparatus, characterized in that. The method of claim 14,
The power supply means changes the power supplied to the target according to the pressure in the vicinity of the sputtering area.
A film forming apparatus, characterized in that. The method according to any one of claims 1 to 15,
The moving means changes the moving speed of the sputtering region according to the position of the sputtering region in the chamber.
A film forming apparatus, characterized in that. The method of claim 16,
The moving means changes the moving speed of the sputtering region according to the pressure in the vicinity of the sputtering region.
A film forming apparatus, characterized in that. The method according to any one of claims 1 to 17,
Further has a distance changing means for changing the distance between the film formation object and the sputtering region,
The distance changing means changes the distance between the film formation object and the sputtering area according to the position of the sputtering area in the chamber.
A film forming apparatus, characterized in that. The method of claim 18,
The distance changing means changes the distance between the object to be formed and the sputtering area according to the pressure in the vicinity of the sputtering area.
A film forming apparatus, characterized in that. As a method for forming a film using a chamber in which a film forming object and a target are disposed,
And a film deposition process of depositing and depositing the sputter particles on the film forming object while moving a sputtering region generating sputter particles from the target in the chamber.
In the film forming step, the pressure in the chamber is adjusted according to the position of the sputtering region in the chamber.
The film forming method characterized in that. A method for manufacturing an electronic device,
A process of forming a film-forming object and a target in the chamber so as to face the film-forming object;
And a film deposition process of depositing and depositing the sputter particles on the film forming object while moving a sputtering region generating sputter particles from the target in the chamber.
In the film forming step, the pressure in the chamber is adjusted according to the position of the sputtering region in the chamber.
A method of manufacturing an electronic device, characterized in that.

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