KR20170095362A - Apparatus and method for coating a substrate with a movable sputter assembly and control over process gas parameters - Google Patents

Apparatus and method for coating a substrate with a movable sputter assembly and control over process gas parameters Download PDF

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Publication number
KR20170095362A
KR20170095362A KR1020177019750A KR20177019750A KR20170095362A KR 20170095362 A KR20170095362 A KR 20170095362A KR 1020177019750 A KR1020177019750 A KR 1020177019750A KR 20177019750 A KR20177019750 A KR 20177019750A KR 20170095362 A KR20170095362 A KR 20170095362A
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South Korea
Prior art keywords
sputter
process gas
gas
substrate
vacuum
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KR1020177019750A
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Korean (ko)
Inventor
다니엘 세버린
마르쿠스 벤더
마르쿠스 하니카
랄프 린덴베르크
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20170095362A publication Critical patent/KR20170095362A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0063—Reactive sputtering characterised by means for introducing or removing gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Abstract

According to embodiments, an apparatus and method for coating a substrate are provided. The apparatus includes a vacuum process chamber. The vacuum process chamber includes a gas inlet assembly and a sputter assembly. The gas inlet assembly includes at least one connector for connecting to one or more process gas sources. The sputter assembly includes a sputter source. The sputter assembly is movable in a vacuum process chamber. The apparatus further comprises a controller. The controller controls the flow of process gas introduced into the vacuum process chamber through the gas inlet assembly, the composition of the process gas introduced into the vacuum process chamber through the gas inlet assembly, and the composition of the process gas introduced into the vacuum process chamber, according to the current position of the sputter source in the vacuum process chamber. And a distribution of process gases introduced into the vacuum process chamber through the assembly. The controller may additionally or alternatively be configured to control the gas flow pumped out of the vacuum process chamber.

Description

FIELD OF THE INVENTION [0001] The present invention relates to an apparatus and a method for coating a substrate using a movable sputter assembly and control over process gas parameters,

[0001] The present disclosure relates to an apparatus and method for coating a substrate in a vacuum process chamber, and more particularly, to an apparatus and method for forming at least one layer of a sputtered material on a substrate. In particular, the apparatus includes a sputter assembly having at least one sputter source for coating a substrate. More particularly, at least some aspects of the disclosure relate to magnetron sputtering, particularly reactive sputtering or inert sputtering. The target of the at least one sputter source may be, for example, a rotatable cylindrical target.

[0002]  It is an important issue in many technical fields to form a layer on a substrate with high uniformity (i. E. Uniform thickness over extended surface). For example, in the field of thin film transistors (TFTs), thickness uniformity can be the key to reliably fabricating display metal lines. In addition, a uniform layer typically facilitates manufacturing reproducibility.

[0003] One method for forming a layer on a substrate is sputtering, and sputtering has been developed as a valuable method in various manufacturing applications, e.g., in the fabrication of TFTs. During sputtering, the atoms are released from the target material by bombardment of the target material with energetic particles (e.g., energized ions of inert or reactive gases). Thereby, the emitted atoms can be deposited on the substrate, whereby a layer of sputtered material can be formed.

[0004] However, forming a layer by sputtering can impair high uniformity requirements, for example due to the geometry of the substrate and / or the target. In particular, due to the irregular spatial distribution of the sputtered material, uniform layers of sputtered material over a wide range of substrates may be difficult to achieve. Providing multiple targets across a substrate can improve layer uniformity. Another option is to rotate the magnet of the magnetron sputter cathode at a constant angular velocity between the specific outer positions and the zero-position circumference. However, especially for some applications that raise high requirements for layer uniformity, the layer uniformity achieved thereby may not be sufficient.

[0005] Thus, additional methods and / or systems for facilitating a highly uniform layer of sputtered material are desirable.

[0006] According to an embodiment, there is provided an apparatus for coating a substrate. The apparatus includes a vacuum process chamber. The vacuum process chamber includes a gas inlet assembly and a sputter assembly. The gas inlet assembly includes at least one connector for connecting to one or more process gas sources. The sputter assembly includes a sputter source. The sputter assembly is movable in a vacuum process chamber. The apparatus further comprises a controller. The controller controls the flow of process gas introduced into the vacuum process chamber through the gas inlet assembly, the composition of the process gas introduced into the vacuum process chamber through the gas inlet assembly, and the composition of the process gas introduced into the vacuum process chamber, according to the current position of the sputter source in the vacuum process chamber. And a distribution of process gases introduced into the vacuum process chamber through the assembly. The controller may additionally or alternatively be configured to control the gas flow pumped out of the vacuum process chamber.

[0007] According to another embodiment, a method for coating a substrate in a vacuum chamber is provided. The method includes providing a first process gas environment for a sputter source, and sputtering a sputter material from a sputter source in a first process gas environment, wherein the sputter source has a first position relative to the substrate, . The method includes moving the sputter source relative to the vacuum chamber. The method further includes providing a second process gas environment different from the first process gas environment for the sputter source and sputtering the sputter material from the sputter source in a second process gas environment, Sputtering a sputter material from a sputter source in a second process gas environment, wherein the sputter source is located at a second position relative to the substrate, wherein the sputter source is located at a second position relative to the substrate.

[0008] Embodiments also relate to methods for operating the disclosed apparatus. These method steps may be performed manually or may be automated, for example, by a computer programmed by appropriate software, by any combination of the two, or in any other manner Lt; / RTI >

[0009] Additional advantages, features, aspects, and details that may be combined with the embodiments described herein will be apparent from the dependent claims, the description, and the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS [0010] The complete and enabling disclosure to those skilled in the art is more particularly enumerated in the remainder of the specification, including references to the accompanying drawings, in which:
1 shows a schematic view of an apparatus for coating a substrate, according to embodiments described herein;
Figure 2 illustrates an embodiment of an apparatus for coating a substrate, according to embodiments described herein;
Figure 3 illustrates, by way of non-limiting example, the working principle of the embodiment of Figure 2;
4-5 illustrate further embodiments of an apparatus for coating a substrate;
Figure 6 is a schematic block diagram illustrating a method for coating a substrate, in accordance with embodiments described herein.

[0011] Reference will now be made in detail to the various exemplary embodiments, and examples of one or more of those embodiments are illustrated in the various figures. Each example is provided as an illustration, and is not intended as a limitation. For example, features illustrated or described as part of one embodiment may be used with or in conjunction with other embodiments to produce further embodiments. The present disclosure is intended to cover such modifications and variations.

[0012] In the following description of the drawings, like reference numerals refer to like components. In general, only differences for the individual embodiments are described. The structures shown in the Figures are not necessarily drawn to scale, but instead provide a better understanding of the embodiments.

[0013] Figure 1 shows a top view of a device 100 for coating a substrate 10 in schematic form. Apparatus 100 includes a vacuum process chamber 102. The substrate may be stationary during the deposition process in the vacuum process chamber 102, particularly during deposition of the layer onto the substrate 10. Apparatus 100 includes a sputter assembly 110 that includes one or more sputter sources, e.g., sputter sources for sputtering from a rotatable target. The apparatus 100 includes a gas inlet assembly 150. 1, the gas inlet assembly 150 includes a gas inlet 154 and a connector 152 for connecting the gas inlet assembly 150 to a process gas source (not shown). The gas inlet assembly 150 may include additional gas inlets and / or additional connectors. The process gas is introduced into the vacuum process chamber 102 through the gas inlet assembly 150 and can be an inert gas for inert sputtering or a reactive gas for reactive sputtering.

[0014] Sputter assembly 110 may be fabricated by sputtering a sputter material onto substrate 10 in the position shown in Figure 1 by the sputter assembly and then translating along the front surface of the substrate as indicated by the dashed arrows And the broken line rectangle represents the sputter assembly 110 at a later point in time. The front surface of the substrate receives the sputter material, and sputtering continues as the sputter assembly is moved along the front surface. In the case of reactive sputtering, a layer of a sputter material, or a layer of a substance comprising reactants from the process gas and a sputter material, is formed on the front surface of the substrate. The gas inlet assembly 150 and connector 152 may be moved with the sputter assembly 110. The process gas may then be provided through the gas inlet assembly 150 during the entire coating process. Alternatively, the gas inlet assembly 150 may be stationary in the vacuum process chamber 102 and the gas inlet assembly 150 may be arranged in an array in the direction of the translation of the sputter assembly 110 (Not shown) that are connected to the gas inlet.

[0015] Due to the translational movement of the sputter assembly 110, in the sputter process, a coating with good uniformity will be deposited on the front surface of the substrate 10. The translational movement of the sputter assembly 110 may be accomplished by exposing the surfaces of the sputter assembly such that objects facing the sputter assembly (e.g., substrates for components of the vacuum process chamber, such as chamber walls or shields) and / Which means that the chamber geometry can change. The changing environment can affect the sputter process performed by the sputtering assembly.

[0016] In the embodiment shown in FIG. 1, the apparatus 100 further comprises a controller 190. The controller 190 is configured to detect information about the current position of the sputter assembly 110, and more particularly, information about the current position of the sputter assembly 110, such as the sputtering temperature of the sputter assembly 110, as indicated by the thick arrows pointing from the sputter assembly 110 to the controller 190. [ And receives information about the positions of the sources or the position of the sputter source. For example, information about the current position of the sputter assembly 110 or the sputter source (s) of the sputter assembly 110 may be measured, for example, continuously or at specific time intervals by the sensors, 190. Alternatively, the controller 190 may control the translation of the sputter assembly 110, and thus the current position of the sputter assembly 110 from the data used to control the translation. The controller 190 can further derive the position (s) of the sputter source (s) from the reference position of the sputter assembly 110, particularly when the sputter source (s) are arranged in a fixed spatial relationship with respect to each other have.

[0017] Based on information about the current position of the sputter assembly 110 during the sputter process, the controller 190 may control the flow of the process gas into the vacuum process chamber 102 through the gas inlet assembly 150, Or by controlling valves (not shown) in excess. In particular, the controller 190 may tailor the flow of the process gas to maintain a constant operating point of the sputter process, if necessary, and in accordance with the current position of the sputter assembly 110. Alternatively or additionally, the controller may tailor the composition of the process gas (e.g., by providing a different mixture of gases from the process gas sources) and / or by adjusting the composition of the process gas (e.g., , And by introducing more process gas through a particular gas inlet).

[0018] 1, all or a portion of the sputter source (s) of the sputter assembly 110 are exposed to a chamber component such as walls or shields 1, the sputter source (s) of the sputter assembly 110 confront the front side of the substrate 10. As an illustration, assuming reactive sputtering is performed, the process gas may react differently at the two positions shown and may be operated at different rates by the chamber components and substrate (different local effective pumping pumping). Thus, the controller can, for example, provide a higher flow of process gas at one position, e.g., at a first position, shown as solid lines, than at another position. The local gas density at the sputter source (s), particularly at the target (s) of the sputter source (s), can be kept constant in this manner, and can be maintained at a constant deposition rate of the sputter material Lt; / RTI >

[0019] By controlling process gas parameters such as flow, composition, and / or distribution, a more uniform coating of the substrate can be achieved. In the case of reactive sputtering, the stoichiometry can be improved since the operating point of the sputter process is kept constant.

[0020] Figure 2 shows an embodiment of an apparatus 200 for coating a substrate 10. The substrate 10 is attached to the substrate carrier 12. [ The substrate carrier 12 is guided by a substrate guiding system 270. The substrate guide system 270 may include, for example, rollers that support the substrate carrier 12 from below, and a magnet guide rail that guides the substrate carrier in a contactless manner from above. The substrate guide system 270 shown in Figure 2 is a system in which the substrate carrier 12 and substrate 10 are placed in and out of the vacuum process chamber 202 of the apparatus 200 and in the side walls of the vacuum process chamber 202 And is allowed to be transported through corresponding gates (not shown).

[0021] The apparatus 200 further includes a sputter assembly 210. The sputter assembly 210 includes a first rotatable target 212 and a first sputter source 211 having a first magnetron 214 and a second rotatable target 222 and a second magnetron 224 And a second sputter source 221 provided with a second sputtering source. The sputter assembly is mounted on a carriage (230).

[0022] The apparatus 200 includes a process gas source 260. Process gas source 260 may include one or more tanks with gases such as argon, xenon, krypton, neon, oxygen, nitrogen, hydrogen, and water vapor, For example, a gas manifold. The apparatus 200 includes a gas inlet assembly 250. The gas inlet assembly 250 includes a connector 252 connected to the process gas source 260 via a connection line 262. The gas inlet assembly 250 includes a first gas lance 254 connected to the connector 252 by a first connection line 253 and a second gas lance 254 connected to the connector 252 by a second connection line 255. [ 2 gas lance 256 and a third gas lance 258 connected to the connector 252 by a third connection line 257 (see FIG. 3). The first sputter source 211 is arranged between the first gas lance 254 and the second gas lance 256 and the second sputter source 221 is arranged between the second gas lance 256 and the third gas lance 258 . The gas inlet assembly 250 is mounted on the carriage 230.

[0023] Apparatus 200 includes a vacuum pump system 265 that may include one or more vacuum pumps. In FIG. 2, one vacuum pump connection line 267 is shown connecting a vacuum pump system 265 to a gas outlet 204 arranged in the front wall of the vacuum process chamber 202. The apparatus 200 may include as many vacuum connection lines as there are one or more vacuum pump connection lines and one or more gas outlets, e.g., gas outlets. Each vacuum pump connection line may be connected to one vacuum pump or several vacuum pump connection lines may be connected to one vacuum pump.

[0024] The apparatus 200 includes a drive system 240 having a drive 245 such as a linear motor. The drive system 240 may include tracks, such as rails, over which the carriage 230 can move. The carriage 230 and thus the sputter assembly 210 and the gas inlet assembly 250 mounted on the carriage are arranged to effect translational movement along the substrate guidance system 270 and parallel to the substrate guidance system ) Drive system 240, as shown in FIG. The first shield 282 and the second shield 284 are arranged between the substrate guiding system 270 and the drive system 240 and a gap exists between the first shield 282 and the second shield 284 , The gap permitting the sputter material to pass between the shields and onto the front surface of the substrate 10.

[0025] While the sputter material is sputtered from the first rotatable target 212 and from the second rotatable target 222, the carriage 230 is moved at least along the length of the substrate, and more particularly, Lt; / RTI > 2, the sputter assembly 210 is in a first position in which the first sputter source 211 and the second sputter source 221 are in contact with the shield 282 outside the substrate processing area, . 2 indicates that the carriage 230 with the sputter assembly 210 and the process gas inlet assembly 250 has been moved and the second position of the carriage 230 and of the components mounted on the carriage Are shown by dashed lines. In the second position, the first sputter source 211 and the second sputter source 221 face the substrate 10 in the substrate processing region.

[0026] Apparatus 200 includes a controller 290. The controller 290 can control the translational movement of the carriage 230 and of the sputter assembly 210 and the translational movement of the gas inlet assembly 250 mounted on the carriage. In particular, the controller 290 may be configured to perform translational motion of the carriage 230 and components mounted on the carriage, as indicated by the line connecting the controller 290 and the driver 245 in Fig. And controls the driving system 240, in particular, the driving unit 245. The controller 290 controls the carriage 230 to move the second rotatable target 222 of the first sputter source 211 with the first rotatable target 212 , And the current positions of the second sputter source 221 with gas lances 254, 256, and 258. The controller 290 may also retain information about the position of the gas outlet 204.

[0027] Based on the positional information for the sputter assembly 210 and / or the gas inlet assembly 250, the controller 290 controls the characteristics of the gas evacuation from the process gas supply and from the vacuum process chamber, The controller controls process gas parameters.

[0028] The controller 290 may control the process gas source 260 as indicated by the line connecting the process gas source 260 and the controller 290 in Figure 2 and the composition of the process gas may be controlled by the controller 290 ). ≪ / RTI > For example, the controller 290 can control to what ratio the different gases contained in the process gas source 260 are mixed to form the current process gas composition. The process gas is transferred from the process gas source 260 to the connector 252 by a connecting line 262. The controller 290 may control the overall flow of the process gas to the sputter assembly 210, for example, by regulating flow through the connection line 262. The adjustment may be made by the connection of the connection line 262 or by the valve of the connector 252, or in a similar manner. The controller 290 can further control the distribution of the process gas. This means that the controller 290 can control partial flows of the process gas through individual gas inlets, such as the gas lances 254, 256, and 258 shown in FIG. The controller can control partial flows, e.g., by individual valves (see FIG. 3) of the connection lines 253, 255, 257, or by the distribution system of the connector 252.

[0029] The controller may also control the pumping system 265, as indicated by the line connecting the controller 290 and the vacuum pumping system 265 in Fig. The controller can control the total flow of gas pumped out of the vacuum process chamber 202 and, in the presence of more than one gas outlet, control the distribution of partial flows pumped out of each gas outlet . The controller can directly control the vacuum pump (s) of the vacuum pumping system 265 or can be connected to the vacuum pump connection line 267, Control valves can be controlled.

[0030] Figure 3 schematically illustrates an example of the control implemented by the controller 290 during the sputter process. 3, when the sputter assembly 210, particularly the first sputter source 211 and the second sputter source 221 move from left to right, during sputtering, the sputter assembly 210 is moved to the processing zone P The sputter assembly 210 will move from the outer region into the processing zone P where the sputter assembly 210 faces the substrate 10 and again moves to a zone outside the processing zone P where the sputter assembly 210 Confronting other components of the vacuum process chamber, e.g., the shields 282 and 284, or chamber walls, shown in FIG. 2 and 3, the processing zone P is included in the gap between the shield 282 and the shield 284.

[0031] 3, the controller 290 directs the total flow F of the process gas delivered to the gas inlet assembly 250 through the connection line 262 to the position x of the sputter assembly 210, And distributes partial flows to individual gas lances 254, 256, and 258 through the distribution of process gases, i. E., Via connection lines 253, 255, and 257, Adjust it according to the position of the gas lances. For example, the total flow F may be higher in the first outer zone E1 where the sputter sources 211, 221 do not face the substrate and may be higher in the sputter assembly 210 and in the gas inlet assembly 250 Can be reduced in the first transition zone T1 in which the components start entering the processing zone P and all of these components are in the processing zone P and in the central zone C facing the substrate 10 (As shown by dashed lines in FIG. 3) and the second transition region of the sputter assembly 210 and where the components of the gas inlet assembly 250 begin to exit the processing zone P T2 and may be at the same value as in the first outer zone E1 in the second outer zone E2 where the sputter sources 211, 221 do not face the substrate.

[0032] In the first transition zone T1 and in the second transition zone T2, the controller can customize the distribution of the process gas. For example, in the position of the carriage 230 and sputter assembly 210, shown in solid lines in Figure 3, the gas inlet assembly 250 is connected to the gas lance 254 through the connection line 253, Can be controlled to deliver less process gas to the gas lance 258 through the connection line 257 than to the gas lance 256 via the connection line 255. [ 3, the controller 290 then determines whether the gas lance 256 is in the processing zone P once the carriage 230 with the sputter assembly 210 and gas inlet assembly 250 mounted thereon is moved further to the right in FIG. It is possible to tailor the distribution of the process gas in the transition zone T1 by reducing the partial flow through the connection line 255 and then the gas lance 254 enters the processing zone P The partial flow through the connection line 253 can be reduced. In the transition zone T2, the partial flows accordingly can be increased in the same order.

[0033] The controller 290 may include a memory section for storing a gas parameter profile as exemplarily shown in Fig. While the carriage 230 is translationally moving through the vacuum process chamber and while the sputter assembly 210 is sputtering, the controller can customize the process gas parameters by values taken from the gas parameter profile.

[0034] As illustrated in Figure 3, the control implemented by the controller 290 is exemplary only and should not be understood as a limitation. In particular, the gas parameter profile may be more complex and may include information about the overall gas flow, distribution of the process gas, and / or control information on the composition of the process gas, based on the current positions of the components of the gas inlet assembly and / . ≪ / RTI > In addition, the control may be performed by controlling the chamber geometry, e.g., the position (s) of the vacuum outlet (s) through which one or more vacuum pumps evacuate the internal volume of the vacuum process chamber and / And may follow additional aspects of the shape and vicinity of other components. The corresponding control information, possibly stored in one or more of the gas parameter profiles, allows the controller to keep the operating point of the sputter process constant throughout the sputter process. The controller can additionally change the process gas parameters or other parameters in a pre-sputter process occurring prior to the sputter process. The control of the sputter-pre-process may be independent of the position, and the pre-sputtering may be performed at a fixed position, such as in the outer zone El.

[0035] Keeping the working point of the sputter process steady serves to increase the uniformity of the coating sputtered on the substrate. It is believed that the combination of moving the sputter source (s) and control over how far the process gas is introduced into the vacuum process chamber will result in a very uniform coating result. In addition, movement of the sputter source (s) allows the use of fewer numbers of sputter sources, as compared to the static arrangement of the sputter sources in the vacuum process chamber. This may be particularly advantageous if the target material sputtered on the substrate is expensive. For example, in the case of reactive sputtering using reactive gases such as oxygen and nitrogen, a stable operating point has a positive effect on the stoichiometry of the growing layer.

[0036] Embodiments of the disclosure facilitate the formation of layers on a substrate, and the layers have a high quality. In particular, the thickness of the layer deposited on the substrate can be very uniform across the entire substrate. In addition, the high homogeneity of the layer (e. G. In terms of properties such as growth crystal structure, resistivity, and / or layer stress) is facilitated. For example, in the production of TFTs, the signal delay depends on the thickness of the layer, and because the thickness non-uniformity can result in pixels being energized at slightly different times, (E.g., in the case of the manufacture of TFT-LCD displays). In addition, embodiments of the present disclosure may be advantageous in the case of forming subsequently etched layers, since uniformity of the layer thickness facilitates achieving the same results at different positions of the formed layer.

[0037] Figure 4 illustrates a further embodiment of an apparatus 300 for coating a substrate 10. Apparatus 300 includes a sputter assembly 310 that includes at least one sputter source. Apparatus 300 and / or sputter assembly 310 may have the same or similar characteristics as the apparatus and sputter assembly described herein with respect to FIGS. 1, 2, and 3. Apparatus 300 may include a controller 390 that may have any of the characteristics of the controller described in connection with FIGS. 1, 2, and 3. The controller 390 is configured to control a power source 360 coupled to the sputter assembly 310 via an electrical connection line 362. In particular, the controller is configured to control the power applied to the at least one sputter source by the power source 360, according to the current position of the at least one sputter source of the sputter assembly 310 or the sputter assembly 310 . Here, in addition to controlling the process gas parameters as described herein, power can be controlled by the controller 390.

[0038] In the embodiment shown in FIG. 5, the apparatus 400 for coating a substrate 10 includes a controller 490 that is capable of performing all the functions of the controller described with respect to FIGS. Additionally, the controller controls the power source 460. The power source 460 is connected to the power distribution system 450, and in particular to the power connector 452, by an electrical connection line 462. The power connector 452 is connected to the first sputter source 211 through the electrical connection line 453 and to the second sputter source 221 through the electrical connection line 455. The controller 490 controls the power applied to the first sputter source 211 based on the current positions of the first sputter source 211 and the second sputter source 221 and controls the power applied to the second sputter source 211 221, respectively. For example, the controller 490 may compare the positions of the first sputter source 211 and the second sputter source 221, shown in solid lines in Figure 5, and the positions of the second sputter source 221, The power applied to the sputter sources at the position of the carriage 230 can be controlled to be higher. The controller may include a power profile stored in a memory section to control power applied to the sputter sources and may access a power profile according to the position of the sputter sources or the sputter assembly 210. [

[0039] In this way, by controlling the process gas parameters and power parameters, the operating point of the sputter process can be stabilized and maintained even better, and the increased uniformity of the layer sputtered on the front surface of the substrate .

[0040] According to embodiments that may be combined with any of the embodiments described herein, an apparatus for coating a substrate is provided. The substrate may be a TFT substrate or a wafer. The substrate may be a glass substrate, a polymer substrate, or a semiconductor substrate. The substrate may be a larger area substrate, such as a sixth generation (GEN), seventh, seventh, eighth, ninth, tenth, or higher generation large area substrate. The dimensions of the substrate may be equal to or greater than, for example, 1100 mm x 1250 mm, equal to or greater than 1500 mm x 1800 mm, equal to or greater than 2160 mm x 2460 mm, equal to or greater than 2200 mm x 2500 mm , Or even equal to or larger than 2880 mm x 3130 mm. The apparatus may be a coating facility for coating such substrates, in particular for sputtering one or more layers of sputter material onto such substrates. The apparatus may comprise one or more process chambers, one or more transfer chambers, one or more load lock chambers, one or more swing modules, and / or one or more Rotation modules. The chamber and modules of the apparatus may be sized to accommodate the substrates described herein. Here, the substrates may be transported through the device in an upright format, which means that the shorter side is parallel to the transport direction of the substrate through the device. In such a case, the footprint of the device may be smaller than the other choices conveyed in landscape format, meaning that the longer sides are parallel to the transport direction.

[0041] The apparatus includes a vacuum process chamber. The vacuum process chamber may be connected to a vacuum pump system for evacuating the vacuum process chamber. The vacuum process chamber and vacuum pump system may be configured to provide a vacuum environment in the vacuum process chamber. The term "vacuum" within this application, 10 -2 mbar pressure under (e. G., As in the case that the process gas can ttaeil to flow in the vacuum process chamber, is not limited to approximately 10 -2 mbar (but this ), Or, more specifically, at a pressure below 10 -3 mbar (e.g., about 10 -5 mbar (but not limited to, such as when the process gas may not flow in the vacuum process chamber )). The vacuum process chamber may include vacuum process chamber walls. The vacuum process chamber may include gates or gates for introducing the substrate into the vacuum process chamber and / or for transferring the substrate out of the vacuum process chamber. The gate (s) may be formed in at least one of the vacuum process chamber walls, e.g., on one or more sidewalls. The gate (s) may comprise gate or gate valves for tightly connecting the vacuum to a neighboring chamber or neighboring module.

[0042] The vacuum process chamber includes a sputter assembly. The sputter assembly includes a sputter source. The sputter source may comprise a target, particularly a rotatable target or a planar target. The target may comprise or consist of Al, Mo, Ti, Cu, ITO, IZO, IGZO, W, Si, Nb or alloys or compositions thereof. The sputter source may comprise a magnetron assembly, particularly a magnetron assembly arranged within the rotatable target of the sputter source. The magnetron assembly may have a fixed orientation or may be configured to perform an oscillating movement.

[0043]  The sputter source may be the first sputter source of the sputter assembly, and the sputter assembly may include N additional sputter sources, where N may range from 1 to 20, for example, from 1 to 10. [ For example, the sputter assembly may comprise 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or more additional sputter sources. Additional sputter source (s), e.g., second, third, fourth, etc., sputter sources may be of the same type as the first sputter source. The total number of sputter sources may be N + 1, and the sputter sources may be arranged along a line or with a bow. The sputter sources may be arranged with regular spaces between the sputter sources, or they may be arranged with varying spaces between the sputter sources. The sputter sources may form a sputter source array.

[0044] The vacuum process chamber includes a gas inlet assembly. The gas inlet assembly includes at least one connector for connecting to one or more process gas sources. The apparatus may include one or more process gas sources and / or one or more connection lines for connecting one or more process gas sources to at least one connector of the gas inlet assembly, for example, , One or more pipes or tubes. Process gas or process gases, such as process gas (s) for reactive sputtering or process gas (s) for inert sputtering, may be included in one or more process gas sources. Examples of process gases for reactive sputtering are O 2 , N 2 , H 2 , H 2 O, or mixtures thereof. Examples of process gases for inert sputtering are Ar, Xe, Kr, Ne or mixtures thereof.

[0045] The gas inlet assembly may include M gas inlets for introducing the process gas into the vacuum process chamber, where M ranges from 1 to 30, in particular from 2 to 20. The number M of gas inlets is determined by the relationship M = N '+ 1 where N' is 1 or N + 1 and N is as described above, or the relationship M = N'-1 Where N 'is N + 1 and N is as described above). The gas inlets may be arranged such that there is one sputter source between the process gas flows exiting the vacuum process chamber from all pairs of gas inlets. The gas inlets may be arranged such that, for each gas inlet, the process gas flow exiting the particular gas inlet into the vacuum process chamber is directed between different pairs of sputter sources. The gas inlets may be arranged such that there is one sputter source between every pair of gas inlets. The gas inlets may be arranged such that there is one gas inlet between every pair of sputter sources. The gas inlets may be gas lances. The gas inlets are in fluid connection with at least one connector, e.g., by a system of pipes or tubes.

[0046] The vacuum process chamber may include one or more gas outlets, e.g., L gas outlets, where L is in the range of 1 to 10. One or more gas outlets may be configured for connection with a vacuum pump system comprising one or more vacuum pumps. One or more gas outlets may be arranged in the chamber wall or in the chamber walls, for example in the front wall or rear wall of the vacuum process chamber. The apparatus may comprise a vacuum pump system, and in particular may include one or more vacuum pumps connected to one or more gas outlets.

[0047] According to embodiments described herein, the sputter assembly is movable in a vacuum process chamber. In particular, the sputter assembly can be movable relative to the vacuum chamber, particularly with respect to the vacuum process chamber wall (s). The sputter assembly may be movable relative to the substrate when the substrate is loaded into the vacuum process chamber. The sputter assembly may be movable in translational motion. The translational motion may be parallel to the substrate surface of the substrate being coated. The translational motion may be parallel to one or more chamber walls, e.g., parallel to the front and / or back wall of the vacuum process chamber. The translational motion may be a continuous motion, in particular a uniform motion, i. E. At least a motion with a constant velocity in the processing zone as described herein.

[0048] The apparatus may include a drive system coupled to the sputter assembly, wherein the drive system is configured to effect translational motion of the sputter assembly. The sputter assembly, and in particular the sputter source (s) of the sputter assembly, can be mounted on a carriage. The carriage may be movable in translational motion. The apparatus may include a track, e.g., a rail system, for supporting and moving the carriage. The apparatus may include a drive system coupled to a carriage of the sputter assembly, wherein the drive system is configured to effect translational motion of the carriage.

[0049]  The gas inlet assembly may be movable with the sputter assembly. In particular, the gas inlet assembly and the sputter assembly may be mounted together on the carriage. Connection lines, such as pipes or tubes, for connecting at least one connector to one or more process gas sources may be flexible, or may be flexible at least in some of the connection lines. Thus, the connection lines for connecting at least one connector to one or more process gas sources may react by bending against movement of the gas inlet assembly. Alternatively, the gas inlet assembly, and particularly the gas inlet or gas inlet of the gas inlet assembly, may be fixedly arranged in the vacuum process chamber.

[0050]  The apparatus, particularly the vacuum process chamber, may include a substrate guide system arranged in a vacuum process chamber. The substrate guide system can be arranged and oriented to support the substrate during coating. The substrate guide system may be arranged to move the substrate into and out of the vacuum process chamber, for example, through one or more gates in the sidewalls of the vacuum process chamber. The substrate guide system includes a substrate carrier for holding the substrate or a track for supporting the substrate, e.g., an assembly of rollers, and / or a track for guiding the substrate / substrate carrier, e.g., a magnetic rail that interacts with the substrate carrier can do. The sputter assembly, and in particular the carriage, if present, can be movable along the substrate guiding system. When the gas inlet assembly is fixedly arranged in the vacuum process chamber, the sputter assembly, and in particular the carriage, can be arranged between the gas inlet assembly and the substrate guide system.

[0051] The vacuum process chamber may include a processing zone. The processing zone may be at least as wide as the dimensions of the substrate parallel to the direction of transport of the substrate in the vacuum process chamber and may be at least as high as the dimensions of the substrate in the vacuum process chamber, high). The vacuum process chamber may include shields. The processing region may be defined by a gap between the shields, or may be included in such a gap. The shields may be arranged in the substrate guidance system to shield the substrate or substrate carrier during coating. The vacuum process chamber may include at least one non-processing zone outside the processing zone, for example, one for each side of the processing zone, and two non-processing zones. The non-processing regions may be at least as wide as the sputter assembly or carriage. The sputter assembly may be movable at least over the width of the processing zone. Additionally, the sputter assembly may be movable over or into at least one non-processing zone.

[0052] The apparatus may further comprise a controller. According to an embodiment that may be combined with any of the embodiments described herein, the controller may control the process gas parameters, e.g., a vacuum process through the gas inlet assembly, in accordance with the current position of the sputter source in the vacuum process chamber At least one of the total process gas flow introduced into the chamber, the composition of the process gas introduced into the vacuum process chamber through the gas inlet assembly, and the distribution of the process gas introduced into the vacuum process chamber through the gas inlet assembly. Control of the distribution may include control of partial process gas flows flowing into the vacuum process chamber from the gas inlets of the gas inlet assembly.

[0053] According to an embodiment that may be combined with any of the embodiments described herein, the gas flow pumped out of the vacuum process chamber may also belong to the process gas parameters. Depending on the current position of the sputter source in the vacuum process chamber, the controller may alternatively or additionally control the process gas parameters relating to the introduction of the process gas into the vacuum process chamber, Control the flow and / or control the flow of gas pumped out of the vacuum process chamber, including, in particular, controlling the distribution of partial gas flows pumped out of the process gas chamber through one or more gas outlets have. The controller may, for example, control the throughput and / or pumping rate of the gas being pumped out of the vacuum process chamber. The controller can control the vacuum pump system, particularly one or more vacuum pumps, to control the gas flow pumped out of the vacuum process chamber. The controller can control the throughput and / or pumping rate at the inlet (s) of one or more vacuum pumps or at one or more gas outlets. The controller can either control the vacuum pumps directly or control one or more control valves in the control valves, e.g., the outlet (s) of the vacuum process chamber.

[0054] The controller controls the current position of at least one of the following components of the apparatus: N additional sputter sources (where N is as described above), carriage, and one or more gas inlets of the gas inlet assembly ), At least one of the process gas parameters (e.g., the total process gas flow, the composition of the process gas, the distribution of the process gas, and / or the gas flow pumped out of the vacuum process chamber). The controller may control the flow of the process gas flowing through the M gas inlets according to the position (s) of the sputter source (s) and / or the position of the M gas inlets (where M is as described above) The composition of the process gas, and the total process gas flow. The distribution of the process gas introduced into the vacuum process chamber, the composition of the process gas, and the overall process gas flow will be referred to herein as process gas inlet parameters and include the distribution of partial gas flows pumped out of the vacuum process chamber, The total gas flow pumped out of the chamber will be referred to as process gas outlet parameters. These parameters are generally included in the term "process gas parameters ". The controller may control the process gas outlet parameters according to the position (s) of the gas outlet (s) of the vacuum process chamber.

[0055] The controller may tailor at least one of the process gas parameters based on the current position of the gas inlet (s) and / or the sputter source (s). The current position of the gas inlet (s) and / or the sputter source (s) may be fixedly mounted on the substrate processing system, shields, vacuum outlet (s), or chamber walls of the vacuum process chamber, May be defined for any other component of the vacuum process chamber. If a substrate is present in the vacuum process chamber to receive the coating, then the current position (s) can be determined for the substrate.

[0056] The controller may be configured to continuously adjust at least one of the process gas parameters, particularly when the sputter assembly is continuously moved while the sputter material is sputtered from the sputter source (s) of the sputter assembly. Here, "continuously tuning" does not preclude that at least one process gas parameter may be constant over a range of positions of the sputter source (s) and / or gas inlet (s) At least one of the gas parameters is changed at least once. Custom alignment occurs during the sputter process. The controller can be further configured to tailor at least one of the process gas parameters during the sputter pre-process, regardless of the position at which the sputter pre-process occurs.

[0057] A controller may be coupled to the drive system to control the translation of the sputter assembly. The controller can be configured to obtain information regarding the position of the sputter assembly, and in particular, the positions of the components of the gas inlet assembly or of the sputter assembly, as described herein. This information can be obtained by sensors or by other feedback equipment. Alternatively, the controller may already have this information, especially if the controller controls the movement of the sputter assembly, e.g., by a drive system.

[0058] The controller may include a memory section for storing the gas parameter profile. The gas parameter profile includes control information regarding the gas parameters, such as the gas outlet (s), of the components of the sputter assembly and / or the position of the gas inlet (s) of the gas inlet assembly of the sputter assembly . The controller may apply the control information of the gas parameter profile based on the information the controller has or obtained with respect to the current position of the components of the device and may control the gas parameters accordingly. The controller can control valves, gas distribution systems, gas manifolds, and / or pumping systems, for example, to adjust gas parameters, as described herein with respect to Figures 1-3. The controller may be configured to control the gas parameters to stably maintain the operating point of the sputter process. Thus, the controller can tailor the process gas environment by adjusting the process gas parameters, and can keep the local process conditions at the target (s) constant.

[0059] The control parameters included in the gas parameter profile and the gas parameter profile are used to determine additional specificities of the geometry of the vacuum process chamber such as the current relative position between one or more vacuum outlets and the sputter assembly / You can follow the location. The geometry of the chamber along the path of movement of the sputter assembly may additionally or alternatively be varied, for example, due to the presence or absence of additional components that may affect or influence the shape of the chamber walls or sputter environment have. The gas parameter profile may reflect any such changes in the geometry of the chamber geometry in that the control information allows it to maintain the operating point of the sputter process even under these changing circumstances.

[0060]  The apparatus may further include a power source for applying power to the sputter source (s). In addition to controlling the gas parameters, the controller can be configured to control the power applied to the sputter source (s) by the power source, according to the current position of the sputter source (s) in the vacuum process chamber or the sputter assembly have. The controller may include a memory section that includes at least one power profile in accordance with the position of the sputter source or the position of the sputter source in the vacuum chamber. The controller may be configured to access the power profile (s) to determine the power applied to the sputter source (s) in accordance with the position of the sputter source (s) in the vacuum chamber. The power profile (s) may be pre-determined, e.g., pre-calculated. The controller can be configured to control the power applied to the sputter source and / or to the N additional sputter sources, where N is as described above.

[0061] According to the embodiment schematically illustrated in FIG. 6, a method 600 for coating a substrate in a vacuum chamber is provided. The method includes providing a first process gas environment for a sputter source, as indicated by 610 in FIG. 6, and sputtering a sputter material from a sputter source in a first process gas environment, wherein The sputter source is located in the first position relative to the substrate. The method includes moving the sputter source relative to the vacuum chamber, as indicated by 620 in Fig. The method includes providing a second process gas environment different from the first process gas environment for the sputter source, as indicated by 630 in FIG. 6, and providing a sputter material from the sputter source in a second process gas environment Further comprising sputtering, wherein the sputter source is located at a second position relative to the substrate.

[0062] The first process gas environment and the second process gas environment may be such that the local sputter conditions at the target (s) of the sputter source (s) are kept constant. In other words, the operating point of the sputter process can be maintained at the first and second positions, and more particularly, at any positions between the first position and the second position. The sputter source can be moved while the sputter material is sputtered, for example, can be moved continuously and / or uniformly. Thus, the process gas environment of the sputter source may be tailored based on the current position of the sputter source relative to the substrate, or any fixed components of the vacuum process chamber, e.g., the substrate guidance system, as described herein . The process gas environment can be continuously tuned in harmony with the continuous translational motion of the sputter source (s), and / or gas inlets of the gas inlet assembly, as described herein.

[0063] The first process gas environment may be determined by a first set of process gas parameters. The first set of process gas parameters includes at least one of the following: a first process gas composition, a first process gas flow into a first process gas environment, a second process gas flow inward into a first process gas environment, A first distribution of the first process gas environment, a first gas flow of the first process gas environment, a first gas flow of the first process gas environment, and a first distribution of the partial gas flows outward of the first process gas environment. The second process gas environment may be determined by a second set of process gas parameters. The second set of process gas parameters includes at least one of the following: a second process gas composition, a total process gas flow to a second inside of the second process gas environment, a partial process gas flow inward into the second process gas environment At least one of a second distribution of the first process gas environment, a second distribution of the second process gas environment, a total gas flow to the second outside of the second process gas environment, and a second distribution of partial gas flows to the outside out of the second process gas environment. The second process gas environment may include the following items: the second gas composition may be different from the first gas composition; The entire process gas flow to the second inside may be different from the entire process gas flow to the first inside; The second distribution of partial process gas flows into the interior may be different from the first distribution of partial process gas flows into the interior; The total gas flow to the second outward may be different from the total gas flow to the first outward; And a second distribution of partial gas flows to the outside may be different from a first distribution of partial gas flows to the outside of the first process gas environment.

[0064] At a first instant in time or during a first period of time, the first process gas environment may comprise a first process gas composition in a first amount and in a first dispense. The method may further include determining a total process gas flow inward and / or an overall gas flow outward to provide a first amount of process gas in a first processing environment at a first moment in time or during a first period of time And a step of controlling. The method may include controlling the first process gas composition by mixing gases in a relationship expressed, for example, in terms of volume percentages of gases. The method may be performed by controlling partial flows inward of the process gas into the vacuum process chamber through the gas inlets and / or by controlling partial flows outward of the gas through the gas outlets of the vacuum process chamber , Controlling the first distribution of the process gas in a first process gas environment at a first moment in time or during a first period of time. At a second instant in time or during a second period of time, the second process gas environment may comprise a second process gas composition in a second amount and in a second dispense. The second quantity, the second process gas composition, and the second dispense of the process gas in the second process gas environment at the second instant in time or during the second period of time may comprise a first quantity, a first process gas composition , And the first distribution, as described herein. The second gas composition may be different from the first gas composition. Alternatively or additionally, the second amount may be different from the first amount. Alternatively or additionally, the first distribution may be different from the second distribution.

[0065] The first process gas environment provided in the first position and the second process gas environment provided in the second position are selected to maintain a constant operating point for sputtering the sputter material. The process gas environment can be continuously adjusted based on the current position of the gas inlet (s) and / or the sputter source (s) of the gas inlet assembly to stably maintain the operating point of the sputter process.

[0066] A first process gas environment may be provided to the sputter source and to N additional sputter sources, where N may be as described herein. A second process gas environment may be provided to the sputter source and to the N additional sputter sources. The gas inlets, e.g., the M gas inlets of the gas inlet assembly described herein, are configured to transfer the process gas, deliver a first process gas environment at a first position, a second process gas environment at a second position, And may be used to create any other process gas environment at any position of the source (s).

[0067] The sputter process of the method for coating a substrate, as described herein, comprises the step of performing any of the functions of the components of the apparatus for coating a substrate, according to embodiments described herein . Additional embodiments are directed to the use of an apparatus as described herein for coating a substrate. The use of the device may include one, some, or all of the features of the method described herein, and the corresponding components of the device are used to perform the sputter process.

[0068] At least some aspects of the disclosure particularly relate to substrate coating techniques solutions involving deposition, patterning, and processing of substrates and equipment, processes, and materials used in coatings, with representative examples being semiconductor and dielectric materials Devices and silicon-based wafers, flat panel displays (e.g., TFTs), masks and filters, energy conversion and storage (e.g., photovoltaic cells, fuel cells, and batteries) , Solid-state lighting (e.g. LEDs and OLEDs), magnetic and optical storage, micro-electro-mechanical systems (MEMS) and nano-electro-mechanical systems (NEMS) optical and opto-electro-mechanical systems, micro-optic and optoelectronic devices, transparent substrates, architectural and automotive glasses, metal and polymer foils and packaging (packaging) Metallization systems for micro-and nano-molding, and applications involving micro-and nano-molding.

[0069] While the foregoing is directed to some embodiments, other and further embodiments may be devised without departing from the scope of the invention as defined by the following claims.

Claims (15)

An apparatus for coating a substrate,
The apparatus comprises:
And a vacuum process chamber,
A gas inlet assembly including at least one connector for connecting to one or more process gas sources;
A sputter assembly comprising a sputter source, the sputter assembly being movable relative to the vacuum process chamber; And
The apparatus comprises:
A flow of process gas introduced into the vacuum process chamber through the gas inlet assembly according to the current position of the sputter source in the vacuum process chamber or into the vacuum process chamber through the gas inlet assembly A controller configured to control at least one of a composition of the process gas, a distribution of the process gas introduced into the vacuum process chamber through the gas inlet assembly, and a gas flow pumped out of the vacuum chamber.
An apparatus for coating a substrate. The method according to claim 1,
Wherein the sputter source comprises a rotatable target,
An apparatus for coating a substrate. 3. The method according to claim 1 or 2,
Wherein the substrate guide system is arranged to support a substrate during coating and to move the substrate into and out of the vacuum process chamber, the sputter assembly comprising: A substrate guide system,
An apparatus for coating a substrate. 4. The method according to any one of claims 1 to 3,
And a drive system coupled to the sputter assembly, wherein the drive system is configured to effect translational movement of the sputter assembly, and in particular, the controller is configured to control the translational movement of the sputter assembly Coupled to said drive system,
An apparatus for coating a substrate. 5. The method according to any one of claims 1 to 4,
Wherein the gas inlet assembly is movable with the sputter assembly, and in particular, the gas inlet assembly and the sputter assembly are mounted on a carriage,
An apparatus for coating a substrate. 6. The method according to any one of claims 1 to 5,
Wherein the gas inlet assembly comprises M gas inlets for introducing the process gas into the vacuum process chamber and wherein M is in the range of 1 to 15, And at least one of a distribution of the process gas, a composition of the process gas, and a flow of the process gas flowing through the M gas inlets,
An apparatus for coating a substrate. 7. The method according to any one of claims 1 to 6,
Wherein the sputter assembly comprises N additional sputter sources, wherein N is in the range of 1 to 10, and wherein the N additional sputter sources are of the same type as the sputter source,
An apparatus for coating a substrate. 8. The method according to any one of claims 1 to 7,
A shield disposed in the substrate guiding system for shielding the substrate or substrate carrier during coating;
A chamber wall of the vacuum process chamber; And
Further comprising at least one of one or more vacuum pumps connected to one or more gas outlets of the vacuum process chamber,
Wherein the controller controls the flow of the process gas, the composition of the process gas, the distribution of the process gas, and the flow rate of the process gas, depending on whether the sputter assembly or the sputter source faces the substrate or faces the shield or the chamber wall. Varying at least one of an entire gas flow pumped out of the vacuum process chamber by one or more vacuum pumps and a distribution of partial gas flows pumped out of the vacuum process chamber through the one or more gas outlets ≪ / RTI >
An apparatus for coating a substrate. 9. The method according to any one of claims 1 to 8,
And a power source for applying power to the sputter source,
Wherein the controller is configured to control power applied to the sputter source by the power source in accordance with the current position of the sputter source or the sputter assembly in the vacuum process chamber.
An apparatus for coating a substrate. A method for coating a substrate in a vacuum chamber,
The method comprises:
Providing a first process gas environment for the sputter source;
Sputtering a sputter material from the sputter source in the first process gas environment, the sputter source being located at a first position relative to the substrate;
Moving the sputter source relative to the vacuum chamber;
Providing, for the sputter source, a second process gas environment different than the first process gas environment; And
Sputtering a sputter material from the sputter source in the second process gas environment, the sputter source being located at a second position relative to the substrate; / RTI >
A method for coating a substrate in a vacuum chamber. 11. The method of claim 10,
Wherein the sputter source is continuously moved while the sputter material is sputtered and the process gas environment of the sputter source is continuously adapted to be based on a current position of the sputter source relative to the substrate,
A method for coating a substrate in a vacuum chamber. The method according to claim 10 or 11,
The first process gas environment comprises a first process gas composition, an entire process gas flow into the first process gas environment into the first process gas environment, a first distribution of partial process gas flows inward into the first process gas environment, A first set of process gas parameters comprising at least one of a total gas flow out of the first process gas environment to a first out side and a first partial outgassing partial gas flows out of the first process gas environment, And the second process gas environment is determined by the second process gas composition, the entire process gas flow into the second inside of the second process gas environment, the partial process gas flows into the second process gas environment A second distribution, a total gas flow out of the second process gas environment to the second outward, Process comprising at least one of the second distribution of partial gas flow in the outer environment out of the gas, the process is determined by a second set of gas parameters,
The following items:
The second gas composition being different from the first gas composition;
Wherein the total process gas flow to the second inside differs from the total process gas flow to the first inside;
Wherein a second distribution of the partial process gas flows into the interior differs from a first distribution of the partial process gas flows into the interior;
Wherein the total gas flow to the second outward is different than the total outward gas flow to the first outward; And
Wherein a second distribution of partial gas flows outwardly is maintained at least one of a difference from a first distribution of partial gas flows outwardly,
A method for coating a substrate in a vacuum chamber. 13. The method according to any one of claims 10 to 12,
Wherein the first process gas environment provided in the first position and the second process gas environment provided in the second position are selected to maintain a constant operating point for sputtering the sputter material,
A method for coating a substrate in a vacuum chamber. 14. The method according to any one of claims 10 to 13,
Wherein providing the first process gas environment comprises providing the first process gas environment for the sputter source and for N additional sputter sources, wherein N ranges from 1 to 10, 2 process gas environment comprises providing the second process gas environment to the sputter source and to the N additional sputter sources.
A method for coating a substrate in a vacuum chamber. 15. The method according to any one of claims 10 to 14,
Wherein the sputter source faces the substrate at the second position and the sputter source is in contact with a component of the vacuum chamber, particularly a shield or chamber wall, at the first position,
A method for coating a substrate in a vacuum chamber.
KR1020177019750A 2014-12-16 2014-12-16 Apparatus and method for coating a substrate with a movable sputter assembly and control over process gas parameters KR20170095362A (en)

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