JPS6217379B2 - - Google Patents
Info
- Publication number
- JPS6217379B2 JPS6217379B2 JP54165568A JP16556879A JPS6217379B2 JP S6217379 B2 JPS6217379 B2 JP S6217379B2 JP 54165568 A JP54165568 A JP 54165568A JP 16556879 A JP16556879 A JP 16556879A JP S6217379 B2 JPS6217379 B2 JP S6217379B2
- Authority
- JP
- Japan
- Prior art keywords
- gold
- layer
- silver
- silicon
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010931 gold Substances 0.000 claims description 30
- 229910052737 gold Inorganic materials 0.000 claims description 29
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 19
- 239000004332 silver Substances 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 230000005496 eutectics Effects 0.000 claims description 9
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 229910001020 Au alloy Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 28
- 239000011521 glass Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 150000002343 gold Chemical class 0.000 description 2
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16556879A JPS5688340A (en) | 1979-12-21 | 1979-12-21 | Heat resistant electrode and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16556879A JPS5688340A (en) | 1979-12-21 | 1979-12-21 | Heat resistant electrode and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5688340A JPS5688340A (en) | 1981-07-17 |
| JPS6217379B2 true JPS6217379B2 (enrdf_load_stackoverflow) | 1987-04-17 |
Family
ID=15814827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16556879A Granted JPS5688340A (en) | 1979-12-21 | 1979-12-21 | Heat resistant electrode and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5688340A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213145A (ja) * | 1983-05-18 | 1984-12-03 | Toshiba Corp | 半導体装置及びその製造方法 |
-
1979
- 1979-12-21 JP JP16556879A patent/JPS5688340A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5688340A (en) | 1981-07-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3323956A (en) | Method of manufacturing semiconductor devices | |
| US2990502A (en) | Method of alloying a rectifying connection to a semi-conductive member, and semi-conductive devices made by said method | |
| JPH08181392A (ja) | 電気素子の接合材料および接合方法 | |
| US2820932A (en) | Contact structure | |
| US4042951A (en) | Gold-germanium alloy contacts for a semiconductor device | |
| US3241011A (en) | Silicon bonding technology | |
| US3227933A (en) | Diode and contact structure | |
| JP4724355B2 (ja) | 半導体装置 | |
| US3581166A (en) | Gold-aluminum leadout structure of a semiconductor device | |
| JPS6217379B2 (enrdf_load_stackoverflow) | ||
| JP2687017B2 (ja) | ショットキバリア半導体装置 | |
| US3032695A (en) | Alloyed junction semiconductive device | |
| JPS5850021B2 (ja) | 半導体装置の製法 | |
| JPS6346984B2 (enrdf_load_stackoverflow) | ||
| US3254389A (en) | Method of making a ceramic supported semiconductor device | |
| JPS6148776B2 (enrdf_load_stackoverflow) | ||
| JP2708798B2 (ja) | 炭化ケイ素の電極形成方法 | |
| JP2007514312A (ja) | 補強された内部接続メタライゼーションを有するワイヤボンディングされた半導体部品 | |
| US3324361A (en) | Semiconductor contact alloy | |
| US3353073A (en) | Magnesium-aluminum alloy contacts for semiconductor devices | |
| US3331995A (en) | Housed semiconductor device with thermally matched elements | |
| JPS59189625A (ja) | 半導体装置の製造方法 | |
| JP2529397B2 (ja) | チップ部品載置用電極 | |
| US3670218A (en) | Monolithic heteroepitaxial microwave tunnel die | |
| US4987476A (en) | Brazed glass pre-passivated chip rectifier |