JPS6217378B2 - - Google Patents
Info
- Publication number
- JPS6217378B2 JPS6217378B2 JP54034985A JP3498579A JPS6217378B2 JP S6217378 B2 JPS6217378 B2 JP S6217378B2 JP 54034985 A JP54034985 A JP 54034985A JP 3498579 A JP3498579 A JP 3498579A JP S6217378 B2 JPS6217378 B2 JP S6217378B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- chamber
- anode
- substrate
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052782 aluminium Inorganic materials 0.000 claims description 33
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 238000007743 anodising Methods 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 239000000243 solution Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000008151 electrolyte solution Substances 0.000 claims description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 33
- 238000000034 method Methods 0.000 description 29
- 229920002120 photoresistant polymer Polymers 0.000 description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- 238000002048 anodisation reaction Methods 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 6
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- -1 aluminum ions Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/005—Apparatus specially adapted for electrolytic conversion coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/892,916 US4192729A (en) | 1978-04-03 | 1978-04-03 | Apparatus for forming an aluminum interconnect structure on an integrated circuit chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54132168A JPS54132168A (en) | 1979-10-13 |
| JPS6217378B2 true JPS6217378B2 (enExample) | 1987-04-17 |
Family
ID=25400706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3498579A Granted JPS54132168A (en) | 1978-04-03 | 1979-03-20 | Device for forming mutual connecting structure of aluminum on ic chip |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4192729A (enExample) |
| JP (1) | JPS54132168A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0523677A3 (en) * | 1991-07-16 | 1994-10-19 | Canon Kk | Method and apparatus for anodic oxidation treatment |
| US5441618A (en) * | 1992-11-10 | 1995-08-15 | Casio Computer Co., Ltd. | Anodizing apparatus and an anodizing method |
| JP3308333B2 (ja) * | 1993-03-30 | 2002-07-29 | 三菱電機株式会社 | 電解メッキ装置，及び電解メッキ処理方法 |
| US5580825A (en) * | 1993-09-20 | 1996-12-03 | International Technology Exchange Corp. | Process for making multilevel interconnections of electronic components |
| US6001234A (en) * | 1997-09-30 | 1999-12-14 | Semitool, Inc. | Methods for plating semiconductor workpieces using a workpiece-engaging electrode assembly with sealing boot |
| US6358388B1 (en) * | 1996-07-15 | 2002-03-19 | Semitool, Inc. | Plating system workpiece support having workpiece-engaging electrodes with distal contact-part and dielectric cover |
| US5980706A (en) * | 1996-07-15 | 1999-11-09 | Semitool, Inc. | Electrode semiconductor workpiece holder |
| US6805778B1 (en) | 1996-07-15 | 2004-10-19 | Semitool, Inc. | Contact assembly for supplying power to workpieces during electrochemical processing |
| US20020000380A1 (en) * | 1999-10-28 | 2002-01-03 | Lyndon W. Graham | Method, chemistry, and apparatus for noble metal electroplating on a microelectronic workpiece |
| US6460404B1 (en) * | 2000-10-12 | 2002-10-08 | Chartered Semiconductor Manufacturing Ltd. | Apparatus and method for detecting bad edge bead removal in a spin-on-glass coater tool |
| US6627052B2 (en) * | 2000-12-12 | 2003-09-30 | International Business Machines Corporation | Electroplating apparatus with vertical electrical contact |
| US20040178065A1 (en) * | 2001-03-16 | 2004-09-16 | Semitool, Inc. | Electrode semiconductor workpiece holder and processing methods |
| US7150820B2 (en) * | 2003-09-22 | 2006-12-19 | Semitool, Inc. | Thiourea- and cyanide-free bath and process for electrolytic etching of gold |
| DE102005039100A1 (de) * | 2005-08-09 | 2007-02-15 | Gebr. Schmid Gmbh & Co. | Einrichtung zur Aufnahme bzw. Halterung mehrerer Substrate und Galvanisiereinrichtung |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3317410A (en) * | 1962-12-18 | 1967-05-02 | Ibm | Agitation system for electrodeposition of magnetic alloys |
| US3554891A (en) * | 1967-12-22 | 1971-01-12 | Ibm | Automatic impurity profiling machine |
| US3536594A (en) * | 1968-07-05 | 1970-10-27 | Western Electric Co | Method and apparatus for rapid gold plating integrated circuit slices |
| US3732159A (en) * | 1970-04-17 | 1973-05-08 | Corning Glass Works | Flow-through chamber for analysis of continuously flowing sample solution |
| DE2051710B2 (de) * | 1970-10-21 | 1975-09-04 | Robert Bosch Gmbh, 7000 Stuttgart | Maschine für die elektrochemische Metallbearbeitung mit mehreren Bearbeitungsstellen |
| US3745100A (en) * | 1971-12-22 | 1973-07-10 | Us Army | Method of preparing semiporous film of aluminum oxide voltage anodization |
| US3909368A (en) * | 1974-07-12 | 1975-09-30 | Louis W Raymond | Electroplating method and apparatus |
| US4118303A (en) * | 1976-08-30 | 1978-10-03 | Burroughs Corporation | Apparatus for chemically treating a single side of a workpiece |
-
1978
- 1978-04-03 US US05/892,916 patent/US4192729A/en not_active Expired - Lifetime
-
1979
- 1979-03-20 JP JP3498579A patent/JPS54132168A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4192729A (en) | 1980-03-11 |
| JPS54132168A (en) | 1979-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6217378B2 (enExample) | ||
| US6120641A (en) | Process architecture and manufacturing tool sets employing hard mask patterning for use in the manufacture of one or more metallization levels on a workpiece | |
| JP5220398B2 (ja) | 電子構造の製造方法 | |
| US6664197B2 (en) | Process for etching thin-film layers of a workpiece used to form microelectronic circuits or components | |
| JP3501642B2 (ja) | 基板処理方法 | |
| US4087367A (en) | Preferential etchant for aluminium oxide | |
| US6143126A (en) | Process and manufacturing tool architecture for use in the manufacture of one or more metallization levels on an integrated circuit | |
| US5803980A (en) | De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue | |
| JPS6252460B2 (enExample) | ||
| US6784109B2 (en) | Method for fabricating semiconductor devices including wiring forming with a porous low-k film and copper | |
| KR0157889B1 (ko) | 선택적 구리 증착방법 | |
| JP2004247738A (ja) | 半導体基板上に導電金属ラインの形成方法 | |
| US5538921A (en) | Integrated circuit fabrication | |
| EP1086485A2 (en) | Process and manufacturing tool architecture for use in the manufacture of one or more metallization levels on a workpiece | |
| US7252750B2 (en) | Dual contact ring and method for metal ECP process | |
| EP1320128A1 (en) | Method for making interconnect structures | |
| US6228765B1 (en) | Structure and method for forming conductive members in an integrated circuit | |
| US6863769B2 (en) | Configuration and method for making contact with the back surface of a semiconductor substrate | |
| EP0767487A1 (en) | Improvements in or relating to semiconductor device fabrication | |
| WO2010133550A1 (en) | Method for coating a semiconductor substrate by electrodeposition | |
| KR0176195B1 (ko) | 반도체 장치의 배선 형성 방법 | |
| KR100537207B1 (ko) | 불활성금속의 화학적 기계적 연마방법 | |
| KR100808595B1 (ko) | 반도체 소자의 소자분리막 형성 방법 | |
| JPH0114701B2 (enExample) | ||
| JPH05211242A (ja) | 半導体装置およびその製造方法 |