JPS62173724A - Device for formation of cvd film - Google Patents

Abstract

PURPOSE:To form a CVD film, uniformity thereof is improved remarkably, by turning a susceptor, on which wafers are arranged and placed, while rotating a pedestal on which each wafer is placed. CONSTITUTION:Gears 3a are shaped on the circumferential surface of pedestals 3 on which wafers 4 are placed, and the gears 3a and engaged with an internal gear 7a for a ring gear 7. The pedestals 3 are turned by the working of the ring gear 7 on the revolution of a susceptor 2. Accordingly, the effect of the slight nonuniformity of temperature distribution in the radial direction in a heater 5 and slight nonparallelism with an electrode 6 of the susceptor 2 is eliminated by shaping a desired CVD film because the susceptor 2 is revolved while the pedestals 3 are turned on the susceptor 2 even when there is the slight nonuniformity of temperature distribution in the radial direction of the heater 5 and even when the susceptor 2 does not run parallel with the electrode 6 slightly, and the uniformity of the film quality of the wafers 4 is not damaged, thus acquiring the CVD film having excellent equality.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in a film production device, and particularly to a film production device in which a portion of a susceptor on which a wafer is placed is rotated.

[Conventional technology]

Conventionally, when forming a passivation film or an interlayer insulating film on a desired wafer 14 by the Q process, in order to improve the uniformity of the film quality, a pedestal for placing the wafer 13, 13, etc. is used as shown in FIG. - Rotating the susceptor 12 loaded with the susceptor 12 in the reactor 11 [Problem to be solved by the invention] When an island film is formed using the above-mentioned conventional mouth generation device,
Although the uniformity of the film quality of the wafer in the rotational direction of the susceptor is improved, the uniformity of the film quality of the wafer in the radial direction of the susceptor is not improved. Therefore, if there is a slight unevenness in the temperature distribution in the radial direction of the heater above the susceptor, or if the susceptor loses its parallelism to the heater or electrode, the effect will be sensitively reflected on the wafer, and the susceptor will There is a drawback that the uniformity of the film quality of the wafer in the radial direction is impaired.

SUMMARY OF THE INVENTION An object of the present invention is to provide a film generation device that improves the uniformity of film quality on sea urchins in the rotational direction and radial direction of a susceptor.

[Means for solving problems]

The present invention provides a method for producing a CVD film characterized by having a susceptor that rotates within a reactor, and a plurality of pedestals on which a wafer to be processed is placed and that rotate independently on the susceptor in conjunction with the susceptor. Apparatus [Example] Next, the present invention will be described in detail with reference to the drawings.

As shown in FIGS. 1(a) and 1(b), in the reactor 1, the pedestal 3 on which the wafer 4 is placed faces the permanent magnet 8 attached to the lower part of the pedestal 3, with the same polarity facing them. The repulsive force of the permanent magnet 9 attached to the upper part of the susceptor 2 causes the susceptor 2 to be placed in a floating state. A gear top is formed on the circumferential surface of this pedestal 3, and this gear guard is an internal gear 7a of the ring gear 7.
The pedestal 3 is rotated by the movement of the gear 7 when the susceptor 20 rotates. 6 is 7j
The L pole, 10, is a gas inlet.

Therefore, by forming a desired film, the susceptor 2 can be rotated even if there is slight unevenness in the temperature distribution in the radial direction of the heater 5 or if the susceptor 2 is slightly not parallel to the electrode 6. At the same time, susceptor 2
By eliminating the effects of the rotation of the pedestal 3 above, the uniformity of the film quality of the wafer 4 is not impaired, and a film with excellent uniformity can be obtained. Furthermore, since the pedestal 3 is magnetically levitated, the friction between the pedestal 3, the ring gear 7, and the susceptor 2 is reduced, and the generation of fine metal powder due to wear is suppressed.

〔Effect of the invention〕

As explained above, the present invention makes it possible to obtain a film with significantly improved uniformity by rotating the susceptor on which wafers are placed side by side and simultaneously rotating the pedestal on which each wafer is placed. It has the effect that it can.

[Brief explanation of drawings]

FIG. 1(α) is a vertical cross-sectional view of a CVD film production apparatus according to an embodiment of the present invention, FIG. 1(b) is a cross-sectional view of the same, and FIG.
(to) is a longitudinal cross-sectional view of the film generation device. 1.11...Reactor, 2. ]2...Susceptor, 3,
13...Pedestal, 4,14...Wafer, 5,1
5... Heater, 6, 16... Electrode, 7... Ring gear, 8, 9... Permanent magnet, 1o... Gas inlet (α) Fig. 1(b) Fig. 1

Claims (1)

[Claims] (1) CVD film production characterized by having a susceptor that rotates in a reactor, and a plurality of pedestals on which a wafer to be processed is placed and that rotate independently on the susceptor in conjunction with the susceptor. Device.