JPH04315430A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To materialize the improvement of a manufactured semiconductor device, concerning a batch processing type of semiconductor manufacturing device. CONSTITUTION:A wafer holding jig 25 for holding a wafer 9 is provided fixedly inside a vertical reactor 21, and also a material gas chamber 31, to which material gas is supplied once, is provided, and a section, through which material gas is supplied to the wafer, is constituted to rotate and shift by rotating a disc 33 where a material gas supply port 32 is made.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a batch processing type semiconductor manufacturing apparatus.

Batch processing type semiconductor manufacturing equipment is required to be capable of manufacturing finished semiconductor products at a high yield.

For example, when considering forming a nitride film on the surface of a wafer or diffusing impurities (for example, phosphorus), in order to increase the yield, ■ the film thickness distribution and impurity distribution must be good ■ the particles must be It is necessary that this does not occur.

[0004] Therefore, in general, a vertical type is used because it provides a better distribution than a horizontal type.

[0005]

2. Description of the Related Art FIG. 4 shows an example of a conventional semiconductor manufacturing apparatus 1. As shown in FIG.

2 is a vertical reactor.

Reference numeral 3 denotes a wafer holding jig, which is provided in the reactor 2 and rotated by a motor 4 as shown by an arrow 5.

Reference numerals 6 and 7 indicate raw material gas pipes, which are connected to the bottom plate 8 of the reactor 2.

A plurality of wafers 9 are mounted on the wafer holding jig 3,
The wafer holding jig 3 rotates in the direction of arrow 5 in the stacked and set state with a gap in between, and the raw material gas A and the raw material gas B are
are separately supplied into the reactor 2 from gas supply ports 10 and 11 as shown by arrows 12 and 13, and a film is formed on each wafer 9.

Reference numeral 14 indicates exhaust.

[0011]

[Problems to be Solved by the Invention] The wafer holding jig 3 is
Since a plurality of wafers 9 are stacked at intervals, the height dimension h
1 is large.

When a plurality of wafers 9 are stacked on the wafer 11 holding jig 3 having a large height dimension h1, it tends to become unstable. Therefore, when the wafer holding jig 3 is rotated in this state as shown by the arrow 5, vibrations and wave-like shaking occur in the wafer holding jig 3, causing the wafer 9 to shift and become misaligned. occurs.

[0013] These particles adhered to the surface of the wafer 9 and caused defects, resulting in a low yield of 50%.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor manufacturing apparatus that can improve yield by preventing the generation of particles.

[0015]

[Means for Solving the Problems] The present invention provides a vertically oriented wafer holding jig for holding a plurality of wafers in a vertically elongated reactor, and a raw material gas supply section below the wafer holding jig. In the semiconductor manufacturing apparatus provided, the wafer holding jig is fixedly provided in the reactor, and the raw material gas supply section is formed in a part of the reactor, and the inside thereof is connected to the reactor. The conditions are the same as those in the reactor, and a raw material gas chamber to which raw material gas is supplied and a raw material gas supply port are formed, and the raw material gas chamber and the above-mentioned reactor are partitioned and rotatably provided. The structure consists of a circular plate and a motor that rotates the circular plate.

[0016]

[Operation] A configuration in which the wafer holding jig is fixedly provided has an effect of suppressing the generation of particles, compared to a configuration in which the wafer holding jig is rotated.

[0017] The raw material gas is once supplied into the raw material gas chamber,
The configuration in which the raw material gas is supplied from the rotating disc's raw material gas supply port to the wafer holding jig side allows the material gas to be supplied to the part to be rotated without unnecessary twisting or swinging of the raw material gas piping. do.

[0018]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor manufacturing apparatus 20 shown in FIGS. 1 and 2 has a vertical structure.

Reference numeral 21 denotes a vertically elongated reactor, which has a double structure consisting of an outer tube 22 and an inner tube 23, and a cap 24 at the bottom.
is blocked by.

Reference numeral 25 denotes a wafer holding jig having a large height h2, and is supported by a plurality of legs 27 extending from a cylindrical support base 26 on the cap 24.
It is fixed and erected inside 3.

30 is a raw material gas supply section, and the reactor 21
It is provided in the lower part of the wafer support jig 25 inside the wafer support jig 25, and as shown in FIG.
, a disk 33 having one raw material gas supply port 32, a motor 34, and the like. The raw material gas chamber 31 is
It consists of a cap 24 and a cylindrical body 35 fixed on the cap 24 and fitted inside the support base 26.

The disk 33 is disposed so as to substantially cover the upper end opening of the cylinder 35 and partition between the source gas chamber 31 and the reactor 21, and is connected to the rotating shaft of the motor 34 outside the reactor 21. 3
It is fixedly provided at 6.

The pressure inside the raw material gas chamber 31 is the same as the pressure inside the reactor 21, and the raw material gas chamber 31 is a part of the inside of the reactor 21.

Reference numerals 37 and 38 are raw material gas pipes, one end of which is connected to the cap 24 and communicated with the raw material gas chamber 31.

39 is an exhaust pipe, which is the outer pipe 2 of the reactor 21.
It is provided at the lower part of the manifold 40 of 2.

Next, the operation of the device 20 having the above configuration will be explained.

First, a plurality of wafers 9 are stacked and set in the wafer holding jig 25 at intervals.

Exhaust is carried out through the exhaust pipe 39, and the reactor 2 is
1 to the desired pressure.

The raw material gas chamber 31 communicates with the reactor 21, and the raw material gas chamber 31 is also under the same conditions as the reactor 21.

Raw material gas A (for example, SiH2 Cl2)
is supplied into the raw material gas chamber 31 from an opening 41 through a pipe 37, and another raw material gas B (for example, NH3) is supplied into the raw material gas chamber 31 from an opening 42 through another pipe 38. Two types of raw material gases, SiH2 Cl2 and NH3, are mixed in the raw material gas chamber 31. The inside of the raw material gas chamber 31 has the same conditions as the inside of the reactor 21, and the raw material gas chamber 3
Mixing of the gases within 1 takes place without any problems.

The upper part of the source gas chamber 31 is covered by a disk 33, and gas is supplied from the source gas chamber 31 to the reactor 21 only through the source gas supply port 32 in the disk 33. .

Here, since the disk 33 is rotated by the motor 34 and the source gas supply port 32 is offset from the center of the disk 33, the source gas supply port 32 rotates as shown at 43. and move.

[0033] Thereby, the mixed raw material gas is supplied into the reactor 21 while the portion to which the raw material gas is supplied moves in a rotating manner as shown by the locus 43.

In this state, a nitride film is formed on the surface of each wafer 9.

This nitride film is formed to have a uniform thickness distribution because the portion to which the raw material gas is supplied moves.

Furthermore, since the wafer holding jig 25 does not rotate, no particles are generated, and the nitride film is of good quality and does not contain particles.

[0037] As a result, semiconductors can be manufactured at a higher yield than conventional methods, for example, at a yield of about 80%.

Furthermore, if POCl3 is supplied as the raw material gas A and PCl3 is supplied as the raw material gas B, phosphorus can be diffused onto the surface of the wafer 9.

In this case, the diffusion is performed in a state where the impurity distribution is uniform and there are no particles.

[0040] As a result, semiconductors can be manufactured at a higher yield than in the past.

[0041]

As explained above, according to the invention of claim 1, in the case of film formation, the film thickness distribution is not impaired, and in the case of impurity diffusion, the impurity distribution is not impaired. Moreover, the generation of particles can be suppressed, and the yield of finished semiconductor devices can be improved.

[Brief explanation of drawings]

FIG. 1 is a perspective view of an embodiment of a semiconductor manufacturing apparatus of the present invention.

FIG. 2 is an elevational view of the semiconductor manufacturing apparatus of FIG. 1;

FIG. 3 is a partially cutaway perspective view showing the raw material gas supply section shown in FIGS. 1 and 2;

FIG. 4 is a diagram showing an example of a conventional semiconductor manufacturing apparatus.

[Explanation of symbols]

9 Wafer 20 Semiconductor manufacturing equipment 21 Reactor 22 Outer tube 23 Inner pipe 24 Cap 25 Wafer holding jig 26 Support stand 27 Legs 30 Raw material gas supply section 31 Raw material gas chamber 32 Raw material gas supply port 33 Disc 34 Motor 35 Cylindrical body 36 Rotation axis 37, 38 Raw material gas piping 39 Exhaust pipe 40 Manifold 41, 42 Opening 43 Movement trajectory of raw material gas supply port

Claims (1)

[Claims] 1. A wafer holding jig (25) for holding a plurality of wafers (9) is vertically provided in a vertically elongated reactor (21), and a raw material gas supply section is provided below the wafer holding jig. (30), in which the wafer holding jig (25) is fixedly provided in the reactor (21), and the raw material gas supply section (30) is provided in the reactor (21). ), the inside of which is kept under the same conditions as the inside of the reactor (21), and has a raw material gas chamber (31) to which raw material gas is supplied, and a raw material gas supply port (32). ), a disc (33) rotatably provided to partition the source gas chamber (31) and the reactor (21), and a motor for rotating the disc (33). (
34) A semiconductor manufacturing apparatus characterized by having a configuration consisting of the following.