JPS62169389A - 半導体レ−ザアレイ装置 - Google Patents

半導体レ−ザアレイ装置

Info

Publication number
JPS62169389A
JPS62169389A JP61011532A JP1153286A JPS62169389A JP S62169389 A JPS62169389 A JP S62169389A JP 61011532 A JP61011532 A JP 61011532A JP 1153286 A JP1153286 A JP 1153286A JP S62169389 A JPS62169389 A JP S62169389A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser array
array device
waveguide
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61011532A
Other languages
English (en)
Japanese (ja)
Other versions
JPH053756B2 (enrdf_load_html_response
Inventor
Mototaka Tanetani
元隆 種谷
Akihiro Matsumoto
晃広 松本
Shusuke Kasai
秀典 河西
Kaneki Matsui
完益 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP61011532A priority Critical patent/JPS62169389A/ja
Priority to GB8701163A priority patent/GB2187330B/en
Priority to US07/005,056 priority patent/US4813051A/en
Priority to DE19873701655 priority patent/DE3701655A1/de
Publication of JPS62169389A publication Critical patent/JPS62169389A/ja
Publication of JPH053756B2 publication Critical patent/JPH053756B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP61011532A 1986-01-21 1986-01-21 半導体レ−ザアレイ装置 Granted JPS62169389A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61011532A JPS62169389A (ja) 1986-01-21 1986-01-21 半導体レ−ザアレイ装置
GB8701163A GB2187330B (en) 1986-01-21 1987-01-20 Semiconductor laser array device
US07/005,056 US4813051A (en) 1986-01-21 1987-01-20 Semiconductor laser array device
DE19873701655 DE3701655A1 (de) 1986-01-21 1987-01-21 Halbleiterlaseranordnung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61011532A JPS62169389A (ja) 1986-01-21 1986-01-21 半導体レ−ザアレイ装置

Publications (2)

Publication Number Publication Date
JPS62169389A true JPS62169389A (ja) 1987-07-25
JPH053756B2 JPH053756B2 (enrdf_load_html_response) 1993-01-18

Family

ID=11780577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61011532A Granted JPS62169389A (ja) 1986-01-21 1986-01-21 半導体レ−ザアレイ装置

Country Status (4)

Country Link
US (1) US4813051A (enrdf_load_html_response)
JP (1) JPS62169389A (enrdf_load_html_response)
DE (1) DE3701655A1 (enrdf_load_html_response)
GB (1) GB2187330B (enrdf_load_html_response)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62282483A (ja) * 1986-05-30 1987-12-08 Sharp Corp 半導体レ−ザアレイ装置
JPS63306689A (ja) * 1987-05-22 1988-12-14 シーメンス、アクチエンゲゼルシヤフト 横結合レーザーダイオードアレー
FR2642228A1 (fr) * 1989-01-20 1990-07-27 Menigaux Louis Procede de fabrication d'un dispositif semi-conducteur quasi plat susceptible d'effet laser multi-longueurs d'onde et dispositif correspondant
JP2547464B2 (ja) * 1990-04-13 1996-10-23 シャープ株式会社 半導体レーザ素子の製造方法
FR2662304B1 (fr) * 1990-05-21 1992-07-24 France Telecom Procede de fabrication d'une structure integree guide-detecteur de lumiere en materiau semi-conducteur.
US5325388A (en) * 1993-05-05 1994-06-28 The United States Of America As Represented By The Secretary Of The Army Optoelectronic waveguide neural architecture
JP3329764B2 (ja) * 1999-05-13 2002-09-30 日本電気株式会社 半導体レーザー及び半導体光増幅器
JP2006186090A (ja) * 2004-12-27 2006-07-13 Matsushita Electric Ind Co Ltd 半導体レーザ装置およびそれを用いた光ピックアップ装置
US9425917B1 (en) * 2006-03-15 2016-08-23 Neophotonics Corporation High data rate long reach transceiver using wavelength multiplexed architecture
US8085825B2 (en) * 2007-03-06 2011-12-27 Sanyo Electric Co., Ltd. Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4156452A (en) * 1977-11-03 1979-05-29 Sharkey Metals Limited Furnaces
US4255717A (en) * 1978-10-30 1981-03-10 Xerox Corporation Monolithic multi-emitting laser device
JPS57190386A (en) * 1981-05-19 1982-11-22 Nec Corp Semiconductor laser
US4573163A (en) * 1982-09-13 1986-02-25 At&T Bell Laboratories Longitudinal mode stabilized laser
US4594718A (en) * 1983-02-01 1986-06-10 Xerox Corporation Combination index/gain guided semiconductor lasers
JPS6089990A (ja) * 1983-10-21 1985-05-20 Sumitomo Electric Ind Ltd 光集積回路
JPS60176289A (ja) * 1984-02-22 1985-09-10 Sumitomo Electric Ind Ltd 光集積回路
JPS61102087A (ja) * 1984-10-25 1986-05-20 Sharp Corp 半導体レ−ザ装置
US4742526A (en) * 1985-01-12 1988-05-03 Sharp Kabushiki Kaisha Semiconductor laser array device

Also Published As

Publication number Publication date
DE3701655A1 (de) 1987-07-23
DE3701655C2 (enrdf_load_html_response) 1992-05-14
GB8701163D0 (en) 1987-02-25
GB2187330B (en) 1989-10-25
JPH053756B2 (enrdf_load_html_response) 1993-01-18
US4813051A (en) 1989-03-14
GB2187330A (en) 1987-09-03

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