JPS6216599B2 - - Google Patents

Info

Publication number
JPS6216599B2
JPS6216599B2 JP55130517A JP13051780A JPS6216599B2 JP S6216599 B2 JPS6216599 B2 JP S6216599B2 JP 55130517 A JP55130517 A JP 55130517A JP 13051780 A JP13051780 A JP 13051780A JP S6216599 B2 JPS6216599 B2 JP S6216599B2
Authority
JP
Japan
Prior art keywords
region
photoelectric conversion
shift register
vertical
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55130517A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5755672A (en
Inventor
Yasuo Ishihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP55130517A priority Critical patent/JPS5755672A/ja
Priority to US06/304,301 priority patent/US4527182A/en
Priority to EP81107482A priority patent/EP0048480B1/en
Priority to DE8181107482T priority patent/DE3168333D1/de
Publication of JPS5755672A publication Critical patent/JPS5755672A/ja
Publication of JPS6216599B2 publication Critical patent/JPS6216599B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP55130517A 1980-09-19 1980-09-19 Solid-state image pickup device and its driving method Granted JPS5755672A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP55130517A JPS5755672A (en) 1980-09-19 1980-09-19 Solid-state image pickup device and its driving method
US06/304,301 US4527182A (en) 1980-09-19 1981-09-21 Semiconductor photoelectric converter making excessive charges flow vertically
EP81107482A EP0048480B1 (en) 1980-09-19 1981-09-21 Semiconductor photoelectric converter
DE8181107482T DE3168333D1 (en) 1980-09-19 1981-09-21 Semiconductor photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55130517A JPS5755672A (en) 1980-09-19 1980-09-19 Solid-state image pickup device and its driving method

Publications (2)

Publication Number Publication Date
JPS5755672A JPS5755672A (en) 1982-04-02
JPS6216599B2 true JPS6216599B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-04-13

Family

ID=15036179

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55130517A Granted JPS5755672A (en) 1980-09-19 1980-09-19 Solid-state image pickup device and its driving method

Country Status (1)

Country Link
JP (1) JPS5755672A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS589361A (ja) * 1981-07-08 1983-01-19 Hitachi Ltd 固体撮像素子
JPS58187082A (ja) * 1982-04-26 1983-11-01 Matsushita Electric Ind Co Ltd 固体撮像装置の駆動方法
JPS5965470A (ja) * 1982-10-05 1984-04-13 Nec Corp 電荷結合素子の出力構造
JPS607766A (ja) * 1983-06-27 1985-01-16 Sony Corp 固体撮像素子の製法
JPS6020687A (ja) * 1983-07-15 1985-02-01 Nippon Kogaku Kk <Nikon> 電子スチルカメラ
JPS60169165A (ja) * 1984-02-10 1985-09-02 Hitachi Ltd 固体撮像素子
JPH0624239B2 (ja) * 1984-02-15 1994-03-30 ソニー株式会社 縦形オ−バ−フロ−イメ−ジセンサ−
JPH0680812B2 (ja) * 1985-03-29 1994-10-12 松下電子工業株式会社 固体撮像装置
JPS61121580A (ja) * 1984-11-16 1986-06-09 Matsushita Electronics Corp 固体撮像装置
JPS61176150A (ja) * 1985-01-31 1986-08-07 Toshiba Corp 固体撮像装置
JPS61198110U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1985-06-03 1986-12-11
JPS61281790A (ja) * 1985-06-07 1986-12-12 Hitachi Ltd 固体撮像装置
JPS62156870A (ja) * 1985-12-28 1987-07-11 Matsushita Electronics Corp 固体撮像装置の製造方法
JPH07120774B2 (ja) * 1986-12-05 1995-12-20 松下電子工業株式会社 固体撮像装置
KR930000914B1 (ko) * 1990-01-29 1993-02-11 금성일렉트론 주식회사 Ccd 영상센서에서 포토 다이오드의 ofd 억제를 위한방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724576A (en) * 1980-07-22 1982-02-09 Toshiba Corp Solid state image pick up device

Also Published As

Publication number Publication date
JPS5755672A (en) 1982-04-02

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