JPS62164205A - Magnetic recording medium - Google Patents

Magnetic recording medium

Info

Publication number
JPS62164205A
JPS62164205A JP477286A JP477286A JPS62164205A JP S62164205 A JPS62164205 A JP S62164205A JP 477286 A JP477286 A JP 477286A JP 477286 A JP477286 A JP 477286A JP S62164205 A JPS62164205 A JP S62164205A
Authority
JP
Japan
Prior art keywords
magnetic
recording medium
layer
substrate
underlayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP477286A
Other languages
Japanese (ja)
Inventor
Shigeo Fujii
重男 藤井
Shiro Murakami
志郎 村上
Hajime Shinohara
篠原 肇
Shigeo Endo
遠藤 重郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP477286A priority Critical patent/JPS62164205A/en
Publication of JPS62164205A publication Critical patent/JPS62164205A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To increase the magnetic flux density of the titled recording medium and to further reduce the thickness of the thin film by forming the substrate with Mn or V, and forming the magnetic layer with a Co-base alloy. CONSTITUTION:The magnetic recording medium consists of the substrate layer formed on a substrate and consisting of Mn or V and a magnetic layer formed with a Co-base alloy contg. <=35atom% Ni or <=20atom% Cr or <=45atom% total amt. of Ni and Cr. When a layer consisting of an element selected from Si, Ge, and Ti is provided between the substrate layer and the substrate, uniform crystal growth of the metal in the substrate layer is promoted. With this constitution, the magnetic flux density is increased, and the recording medium with a thin film can be obtained.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は磁気記録媒体、特にコンピュータ外部メモリ装
置に用いられる固定磁気ディスクあるいはフレキシブル
ディスクに関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to magnetic recording media, particularly fixed magnetic disks or flexible disks used in computer external memory devices.

〔従来の技術〕[Conventional technology]

近年、コンピュータの小型化や処理能力の増大化に伴い
外部メモリ装置の記憶容量を更に増大させることが要求
されてきている。この要求を満足させるためには、外部
メモリ装置に用いられるメモリディスクも更に記録密度
を増加させる必要があり、このためには記録層を形成す
る磁性薄膜の磁気特性の向上と記録層のより一層の薄膜
化を促進しなければならない。
In recent years, as computers have become smaller and their processing power has increased, there has been a demand for further increases in the storage capacity of external memory devices. In order to satisfy this demand, it is necessary to further increase the recording density of memory disks used in external memory devices, and for this purpose, it is necessary to improve the magnetic properties of the magnetic thin film that forms the recording layer and to make the recording layer even thicker. It is necessary to promote thinning of the film.

そこで、かかる要求を満足させる1つの方法として、特
公昭55−14058号公報に示されるように、スパッ
タリング法により記録層を形成する方法が開発された。
Therefore, as one method for satisfying such requirements, a method of forming a recording layer by a sputtering method was developed, as disclosed in Japanese Patent Publication No. 14058/1983.

こり方法は、鉄あるいは鉄合金をターゲットとし反応ス
パッタリングによりディスク基板上にFeJaの薄膜層
を形成し、その後これを熱酸化してγ−Fe2O3とす
るものである。
The method involves forming a thin film layer of FeJa on a disk substrate by reactive sputtering using iron or an iron alloy as a target, and then thermally oxidizing this to form γ-Fe2O3.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記の磁気記録媒体においては、磁性層が酸化物である
ため飽和磁束密度が小さく記録媒体として実用に供する
ためには薄層化に限界があった。
In the above-mentioned magnetic recording medium, since the magnetic layer is an oxide, the saturation magnetic flux density is small and there is a limit to how thin the layer can be made to be for practical use as a recording medium.

また、250℃以上の熱処理過程を必要とするため、ア
ルミニウム合金上にN1−P下地層が形成された基板を
使用した場合、N1−P層の帯磁を招き記録特性の劣化
をもたらし安価な該基板を使用できないという不具合を
有していた。本発明は高飽和磁束密度の媒体を特殊下地
層の形成により、薄膜を磁化容易軸方向が膜面内になる
様エピタキシャル成長させ高い保磁力とヒステリシス角
形性を有することに特徴を有する。
In addition, since a heat treatment process of 250°C or higher is required, if a substrate with an N1-P underlayer formed on an aluminum alloy is used, the N1-P layer will become magnetized, resulting in deterioration of recording characteristics and reducing the cost of low-cost materials. The problem was that the board could not be used. The present invention is characterized in that a medium with a high saturation magnetic flux density is epitaxially grown by forming a special underlayer so that the axis of easy magnetization is in the plane of the film, resulting in a high coercive force and hysteresis squareness.

従来かかる目的にはCr下地膜が形成されていたが、C
r下地膜は極めて活性なため雰囲気中の微量0□ガス等
により表面が酸化され、磁性膜の上記エピタキシー成長
に支障をきたし、保磁力、角形比の制御性に困難を有し
ていた。
Conventionally, a Cr underlayer was formed for this purpose, but C
Since the r base film is extremely active, its surface is oxidized by trace amounts of 0□ gas in the atmosphere, which impedes the epitaxy growth of the magnetic film and makes it difficult to control the coercive force and squareness ratio.

ずなわち、背圧10−6Torr以上の高真空中に5−
20 mTorrのArガスを流し、Cr下地膜を50
00人スパッタした場合次の磁性膜形成に至る時間の増
大と共にHcが低下する傾向を有している。このため背
圧、Arガス純度、下地膜形成後の磁性膜形成時間の制
御が極めて重要となり、かかるCr下地による磁気ディ
スク等の製法では磁性の制御が困難であった。
That is, in a high vacuum with a back pressure of 10-6 Torr or more,
Flowing Ar gas at 20 mTorr, the Cr base film was heated at 50 mTorr.
In the case of sputtering by 00 people, Hc tends to decrease as the time until the next magnetic film is formed increases. For this reason, control of back pressure, Ar gas purity, and magnetic film formation time after formation of the underlayer is extremely important, and it has been difficult to control magnetism in the manufacturing method of magnetic disks using such a Cr underlayer.

〔問題点を解決するための手段〕[Means for solving problems]

上記従来技術の問題点を解決するために、本発明はMn
、MoまたはV下地層上にCo基磁性層が形成されて成
ることを特徴とする磁気記録媒体である。
In order to solve the above-mentioned problems of the prior art, the present invention provides Mn
, Mo or V underlayer and a Co-based magnetic layer formed thereon.

以下本発明につき更に詳細に説明する。The present invention will be explained in more detail below.

本発明の磁気記録媒体は、Mn、Moまたは■下地層上
に磁性層が形成されている。磁性層はCo基合金であり
35原子%以下のNiまたは20原子%以下のCr、あ
るいはNiおよびCrの総量が45原子%以下を含んだ
組成であることが望ましい。この組成に限定した理由は
いずれの組成においても上限を超える場合f、c、c、
相の等軸異方性構造となり、記録媒体に適切な磁気特性
が得られないという理由による。
In the magnetic recording medium of the present invention, a magnetic layer is formed on a Mn, Mo or (2) underlayer. The magnetic layer is preferably a Co-based alloy and has a composition containing 35 atomic % or less of Ni, 20 atomic % or less of Cr, or a total amount of Ni and Cr of 45 atomic % or less. The reason for limiting this composition is that if any composition exceeds the upper limit, f, c, c,
This is because the phase becomes an equiaxed anisotropic structure, making it impossible to obtain appropriate magnetic properties for the recording medium.

Mn、Mo、V下地組及びCo基合金磁性層は、スパッ
タリング、イオンビームスパッタリンク、真空蒸着など
のイオン工学的手段により形成される。
The Mn, Mo, V underlayer and Co-based alloy magnetic layer are formed by ion engineering means such as sputtering, ion beam sputter linking, and vacuum evaporation.

Co基合金磁性層は、Mn、Mo、V層上にこの下地層
との2次元的方位関係を満足する結晶成長、所謂エピタ
キシャル成長によりり、c、p、構造を有するCo基合
金の磁化容易軸であるC軸方向が磁性面内に傾き、面内
記録媒体として適切な磁気特性を有するものと考えられ
る。Mn、Mo、V下地層厚は特に限定されるものでは
なく、また、この下地層の下にさらにSi+ G e 
r T i層などを設けた場合Si、Ge、Tiなどの
層はMn、Mo、V下地層の均一な結晶成長を促しその
下地層膜厚を軽減させる効果を有する。尚、S L G
e、 T i層もイオン工学的手段により形成される。
The Co-based alloy magnetic layer is grown on the Mn, Mo, and V layers by crystal growth that satisfies the two-dimensional orientation relationship with this underlayer, so-called epitaxial growth, so that the easy axis of magnetization of the Co-based alloy having the c, p, structure. It is considered that the C-axis direction is inclined in the magnetic plane and has magnetic properties suitable as a longitudinal recording medium. The thickness of the Mn, Mo, and V underlayers is not particularly limited.
When an r Ti layer or the like is provided, a layer of Si, Ge, Ti, etc. has the effect of promoting uniform crystal growth of the Mn, Mo, or V underlayer and reducing the thickness of the underlayer. Furthermore, S.L.G.
e, Ti layer is also formed by ionotechnical means.

〔実施例〕 1 平板マグネトロンr、f、スパッタ装置を用い、下記条
件にて下地膜および磁性膜を形成した。
[Example] 1 A base film and a magnetic film were formed under the following conditions using a flat plate magnetron r, f sputtering device.

初期排気圧    < 3 X 10−’Torrスパ
ッタ時Ar圧  1〜8mTOrr(下地層)10〜2
0mTorr (磁性層) 投入電力     300W ターゲット組成   0〜40at%Ni10〜25a
t%Cr 2O〜30at%Ni、 10〜20at%Crいずれ
も残部Co 極間隔      6011 基板温度     100〜200℃ 磁性層膜厚    700A 基 板     ガラス この磁気記録媒体の磁気特性は表1に示す如くであった
。本磁性特性は第1層および第2層下地膜成形後の時間
に関係なく50時間経過しても同様に高い磁気特性値を
示した。この点従来のCr下地による方法に対し、特性
の制御性にも優っていた。
Initial exhaust pressure < 3 X 10-'Torr Ar pressure during sputtering 1 to 8 mTOrr (base layer) 10 to 2
0mTorr (magnetic layer) Input power 300W Target composition 0~40at%Ni10~25a
t%Cr 2O to 30at%Ni, 10 to 20at%Cr, balance Co Pole spacing 6011 Substrate temperature 100 to 200°C Magnetic layer thickness 700A Substrate Glass The magnetic properties of this magnetic recording medium are as shown in Table 1. Ta. The magnetic properties showed similarly high magnetic property values even after 50 hours had elapsed, regardless of the time after the formation of the first and second underlayer films. In this respect, the controllability of properties was also superior to the conventional method using a Cr base.

Mn、V等の第2層下地膜をつけず実施例1と同様の方
法で形成した薄膜は保磁力2000e程度であり(表I
No、14. No、l 5) 、磁気記録媒体として
不適であった。Co−40Ni、 Co−25Cr。
A thin film formed in the same manner as in Example 1 without a second layer base film of Mn, V, etc. had a coercive force of about 2000e (Table I
No, 14. No. 15), it was unsuitable as a magnetic recording medium. Co-40Ni, Co-25Cr.

Co−3ON+−20Cr媒体(表111k1.3.h
k1.5゜隘8)においては、いずれもCo組成が少(
Ni。
Co-3ON+-20Cr medium (Table 111k1.3.h
At k1.5°8), the Co composition is low (
Ni.

Cr組成が多すぎたため充分な保磁力が得られなかった
。又、Cr下地膜を0.5μm形成50時間後表1と同
様な条件で同様の媒体を形成したが、Hc、は4000
e以下であり媒体に不適であった。
Sufficient coercive force could not be obtained because the Cr composition was too large. Furthermore, after 50 hours of forming a 0.5 μm thick Cr underlayer, a similar medium was formed under the same conditions as in Table 1, but Hc was 4000.
It was less than e and was unsuitable for the medium.

〔発明の効果〕〔Effect of the invention〕

以上、本発明の磁気記録媒体はCo基合金磁性層の下に
Mn、Mo、V下地層を設けることにより、良好な膜面
内の磁気特性を得ることができ従来のγ−Fe203ス
パッタ膜より3倍以上の磁束密度を有し、一層の薄膜化
を可能とし新たな記録媒体の製造が可能となった。
As described above, by providing the Mn, Mo, and V underlayers under the Co-based alloy magnetic layer, the magnetic recording medium of the present invention can obtain better in-plane magnetic properties than the conventional γ-Fe203 sputtered film. It has more than three times the magnetic flux density, making it possible to make the film even thinner, making it possible to manufacture new recording media.

基板をガラスに代えて安定化ZrO□(ZrO□・6Y
203)セラミック基板、NiPメツキ処理、11基板
、アルマイト処理Aβ基板を使用した場合についてもガ
ラスと同様の下地層効果が認められ、表1と同様の高い
面内異方性を有する高保磁力、高磁束密度媒体が得られ
た。
Stabilized ZrO□ (ZrO□・6Y
203) The same underlayer effect as glass was observed when using ceramic substrates, NiP plating treatment, 11 substrates, and alumite treatment Aβ substrates, and high coercive force and high A magnetic flux density medium was obtained.

本発明により、Cr下地膜よりも制御性の良い高い磁気
特性を有する合金面内磁気記録用媒体が得られる様にな
った。
According to the present invention, it has become possible to obtain an alloy longitudinal magnetic recording medium having high magnetic properties with better controllability than a Cr underlayer.

Claims (4)

【特許請求の範囲】[Claims] (1)基板上に形成された下地層および磁性層より成る
磁気記録媒体において、この下地層がMn、Moまたは
Vより成り、磁性層はCo基合金より成ることを特徴と
する磁気記録媒体。
(1) A magnetic recording medium comprising an underlayer and a magnetic layer formed on a substrate, wherein the underlayer is made of Mn, Mo or V, and the magnetic layer is made of a Co-based alloy.
(2)磁性層は35原子%以下のNi、または20原子
%以下のCr、あるいはNiおよびCrの総量で45原
子%以下含有し残部実質的にCoより成ることを特徴と
する特許請求の範囲第1項記載の磁気記録媒体。
(2) Claims characterized in that the magnetic layer contains 35 atomic % or less of Ni, 20 atomic % or less of Cr, or 45 atomic % or less of the total amount of Ni and Cr, with the remainder substantially consisting of Co. The magnetic recording medium according to item 1.
(3)基板上に形成された下地層および磁性層からなる
磁気記録媒体において、この下地層はSi、Ge及びT
iから選ばれた少くとも一種の元素から成る第一層と、
その上の形成されたMn、MoあるいはVより成る第二
層からなり、磁性層はCo基合金より成ることを特徴と
する磁気記録媒体。
(3) In a magnetic recording medium consisting of an underlayer and a magnetic layer formed on a substrate, this underlayer is made of Si, Ge, and T.
a first layer consisting of at least one element selected from i;
A magnetic recording medium comprising a second layer made of Mn, Mo or V formed thereon, and a magnetic layer made of a Co-based alloy.
(4)磁性層は35原子%以下のNi、または20原子
%以下のCr、あるいはNiおよびCrの総量で45原
子%以下含有し、残部が実質的にCoより成ることを特
徴とする特許請求の範囲第3項記載の磁気記録媒体。
(4) A patent claim characterized in that the magnetic layer contains 35 atomic % or less of Ni, 20 atomic % or less of Cr, or 45 atomic % or less of the total amount of Ni and Cr, with the remainder substantially consisting of Co. The magnetic recording medium according to item 3.
JP477286A 1986-01-13 1986-01-13 Magnetic recording medium Pending JPS62164205A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP477286A JPS62164205A (en) 1986-01-13 1986-01-13 Magnetic recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP477286A JPS62164205A (en) 1986-01-13 1986-01-13 Magnetic recording medium

Publications (1)

Publication Number Publication Date
JPS62164205A true JPS62164205A (en) 1987-07-20

Family

ID=11593130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP477286A Pending JPS62164205A (en) 1986-01-13 1986-01-13 Magnetic recording medium

Country Status (1)

Country Link
JP (1) JPS62164205A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998048413A1 (en) * 1997-04-22 1998-10-29 Carnegie Mellon University Manganese containing layer for magnetic recording media
US6432563B1 (en) 2000-04-03 2002-08-13 Carnegie Mellon University Zinc enhanced hard disk media

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998048413A1 (en) * 1997-04-22 1998-10-29 Carnegie Mellon University Manganese containing layer for magnetic recording media
US6432563B1 (en) 2000-04-03 2002-08-13 Carnegie Mellon University Zinc enhanced hard disk media

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