JPS62163974U - - Google Patents
Info
- Publication number
- JPS62163974U JPS62163974U JP1986051489U JP5148986U JPS62163974U JP S62163974 U JPS62163974 U JP S62163974U JP 1986051489 U JP1986051489 U JP 1986051489U JP 5148986 U JP5148986 U JP 5148986U JP S62163974 U JPS62163974 U JP S62163974U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- single crystal
- conductivity type
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 3
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
第１図は本考案の実施例を示す化合物半導体太
陽電池の断面図であり、第２図Ａ〜Ｅは、この化
合物半導体太陽電池の工程断面図である。
１，１０…Ｓｉ基板、２，１２…（１１１）面
、１３…ｎ型ＧａＡｓ層、１４…ｐ型ＧａＡｓ層
、１５…ｐ型ＧａＡｌＡｓ層、１６…コンタクト
部、７，１７…絶縁膜、８，１８…ｐ側電極、９
，１９…ｎ側電極。
FIG. 1 is a cross-sectional view of a compound semiconductor solar cell showing an embodiment of the present invention, and FIGS. 2A to 2E are process cross-sectional views of this compound semiconductor solar cell. DESCRIPTION OF SYMBOLS 1, 10... Si substrate, 2, 12... (111) plane, 13... n-type GaAs layer, 14... p-type GaAs layer, 15... p-type GaAlAs layer, 16... contact part, 7, 17... insulating film, 8 , 18... p-side electrode, 9
, 19...n-side electrode.
Claims (1)
形成された第１導電型のＳｉ基板と、 該Ｓｉ基板の表面上に積層された第１導電型Ｇ
ａＡｓ単結晶の第１層と、 該第１層上に積層された第２導電型ＧａＡｓ単
結晶の第２層と、 該第２層上に所定領域に開口を有して形成され
た第２導電型ＧａＡｌＡｓ単結晶の第３層と、 該開口に前記第２層に接続して形成された第１
電極と、 該Ｓｉ基板の（１００）の裏面上に形成された
第２電極とを備えてなることを特徴とする化合物
半導体太陽電池。[Claims for Utility Model Registration] A first conductivity type Si substrate on the surface of which undulations surrounded by (111) planes are regularly formed, and a first conductivity type G layered on the surface of the Si substrate.
a first layer of aAs single crystal; a second layer of second conductivity type GaAs single crystal laminated on the first layer; and a second layer formed with an opening in a predetermined region on the second layer. a third layer of conductive type GaAlAs single crystal; and a first layer formed in the opening connected to the second layer.
A compound semiconductor solar cell comprising: an electrode; and a second electrode formed on the (100) back surface of the Si substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986051489U JPS62163974U (en) | 1986-04-08 | 1986-04-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986051489U JPS62163974U (en) | 1986-04-08 | 1986-04-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62163974U true JPS62163974U (en) | 1987-10-17 |
Family
ID=30875799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986051489U Pending JPS62163974U (en) | 1986-04-08 | 1986-04-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62163974U (en) |
-
1986
- 1986-04-08 JP JP1986051489U patent/JPS62163974U/ja active Pending
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