JPS61190153U - - Google Patents
Info
- Publication number
- JPS61190153U JPS61190153U JP7359985U JP7359985U JPS61190153U JP S61190153 U JPS61190153 U JP S61190153U JP 7359985 U JP7359985 U JP 7359985U JP 7359985 U JP7359985 U JP 7359985U JP S61190153 U JPS61190153 U JP S61190153U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- compound semiconductor
- group compound
- stacked
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
Description
第１図ａ〜ｃは、この考案の１実施例を説明す
るための素子断面図である。
１…半絶縁性ＩｎＰ基板、２…ＩｎＧａＡｓＰ
層、３…ＩｎＰ層、４…ＩｎＧａＡｓ層、５…ｎ
型ＩｎＧａＡｓ層、６…ｐ型ＩｎＰ層、７…反射
防止膜、８，９…電極。
FIGS. 1a to 1c are sectional views of an element for explaining one embodiment of this invention. 1... Semi-insulating InP substrate, 2... InGaAsP
layer, 3...InP layer, 4...InGaAs layer, 5...n
type InGaAs layer, 6... p-type InP layer, 7... antireflection film, 8, 9... electrode.
Claims (1)
合物半導体基板と、 少なくとも該開口を含む該基板上に積層された
第１導電型の―族化合物半導体の第１層と、 該第１層上に積層された―族化合物真性半
導体の第２層と、 該第２層上に積層された第２導電型の―族
化合物半導体の第３層と、 該第３層上に形成された第１電極と、 前記第１層に低抵抗領域を介して接続して形成
された第２電極と、 を備えてなることを特徴とする受光素子。[Claims for Utility Model Registration] A semi-insulating - group compound semiconductor substrate having an opening in a predetermined region, and a first layer of a - group compound semiconductor of a first conductivity type laminated on the substrate including at least the opening. a second layer of a - group compound semiconductor stacked on the first layer; a third layer of a - group compound semiconductor of a second conductivity type stacked on the second layer; and a third layer of a - group compound semiconductor stacked on the second layer. A light-receiving element comprising: a first electrode formed above; and a second electrode connected to the first layer through a low resistance region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7359985U JPS61190153U (en) | 1985-05-20 | 1985-05-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7359985U JPS61190153U (en) | 1985-05-20 | 1985-05-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61190153U true JPS61190153U (en) | 1986-11-27 |
Family
ID=30613119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7359985U Pending JPS61190153U (en) | 1985-05-20 | 1985-05-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61190153U (en) |
-
1985
- 1985-05-20 JP JP7359985U patent/JPS61190153U/ja active Pending
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