JPS6216276B2 - - Google Patents
Info
- Publication number
- JPS6216276B2 JPS6216276B2 JP6363083A JP6363083A JPS6216276B2 JP S6216276 B2 JPS6216276 B2 JP S6216276B2 JP 6363083 A JP6363083 A JP 6363083A JP 6363083 A JP6363083 A JP 6363083A JP S6216276 B2 JPS6216276 B2 JP S6216276B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etched
- etching solution
- solution
- aqueous solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 48
- 239000000243 solution Substances 0.000 claims description 41
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 32
- 239000007864 aqueous solution Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 13
- 238000003486 chemical etching Methods 0.000 claims description 11
- SOCTUWSJJQCPFX-UHFFFAOYSA-N dichromate(2-) Chemical class [O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O SOCTUWSJJQCPFX-UHFFFAOYSA-N 0.000 claims description 10
- 239000003513 alkali Substances 0.000 claims description 9
- 229920006395 saturated elastomer Polymers 0.000 claims description 3
- 238000005530 etching Methods 0.000 description 57
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 38
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 239000000203 mixture Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N methyl alcohol Substances OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- GIOZLVMCHDGNNZ-UHFFFAOYSA-N magnesium;oxido-(oxido(dioxo)chromio)oxy-dioxochromium Chemical compound [Mg+2].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O GIOZLVMCHDGNNZ-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- -1 GaAs Chemical class 0.000 description 1
- PJLJHXZTANASPP-UHFFFAOYSA-N O.OO.OS(O)(=O)=O Chemical compound O.OO.OS(O)(=O)=O PJLJHXZTANASPP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000001447 alkali salts Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- CMMUKUYEPRGBFB-UHFFFAOYSA-L dichromic acid Chemical class O[Cr](=O)(=O)O[Cr](O)(=O)=O CMMUKUYEPRGBFB-UHFFFAOYSA-L 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003189 isokinetic effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6363083A JPS59190366A (ja) | 1983-04-13 | 1983-04-13 | ３−ｖ族化合物結晶用化学エツチング液 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6363083A JPS59190366A (ja) | 1983-04-13 | 1983-04-13 | ３−ｖ族化合物結晶用化学エツチング液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59190366A JPS59190366A (ja) | 1984-10-29 |
| JPS6216276B2 true JPS6216276B2 (enrdf_load_stackoverflow) | 1987-04-11 |
Family
ID=13234853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6363083A Granted JPS59190366A (ja) | 1983-04-13 | 1983-04-13 | ３−ｖ族化合物結晶用化学エツチング液 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59190366A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5181924B2 (ja) * | 2008-08-21 | 2013-04-10 | ソニー株式会社 | 半導体発光素子及びその製造方法、並びに、下地に設けられた凸部、下地における凸部形成方法 |
-
1983
- 1983-04-13 JP JP6363083A patent/JPS59190366A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59190366A (ja) | 1984-10-29 |