JPS62156861A - Manufacture of solid-state image pickup device - Google Patents
Manufacture of solid-state image pickup deviceInfo
- Publication number
- JPS62156861A JPS62156861A JP60297562A JP29756285A JPS62156861A JP S62156861 A JPS62156861 A JP S62156861A JP 60297562 A JP60297562 A JP 60297562A JP 29756285 A JP29756285 A JP 29756285A JP S62156861 A JPS62156861 A JP S62156861A
- Authority
- JP
- Japan
- Prior art keywords
- channel stop
- channel
- peripheral circuit
- forming
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims abstract description 23
- 230000002093 peripheral effect Effects 0.000 claims abstract description 17
- 238000002955 isolation Methods 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000013518 transcription Methods 0.000 description 1
- 230000035897 transcription Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、固体撮像装置の製造方法に関し、特に半導
体基板上に集積化されており、入射光ｈｔに応じて電荷
を発生する感光部と、感光部で発生された電荷に応じて
電気信号を発生する周辺回路とを具備した固体撮像装置
の製造方法の関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for manufacturing a solid-state imaging device, and in particular, a photosensitive section that is integrated on a semiconductor substrate and that generates electric charges in response to incident light ht; The present invention relates to a method of manufacturing a solid-state imaging device including a peripheral circuit that generates an electrical signal in response to charges generated in a photosensitive section.
〔発明の技術的背景および背景技術の問題点〕従来、こ
の種の固体＠像装置の製造においては、周辺回路の素子
分離のためのチャンネルストップと、感光部の画素分離
のためのチャンネルストップを同時に同一の工程で形成
していた。[Technical Background of the Invention and Problems of the Background Art] Conventionally, in the manufacture of this type of solid-state @imaging device, channel stops for element isolation of peripheral circuits and channel stops for pixel isolation of photosensitive parts have been used. They were formed at the same time and in the same process.
周辺回路部には感光部よりも高い電圧が加わる。A higher voltage is applied to the peripheral circuit section than to the photosensitive section.
例えば感光部のバイアス電圧は１〜２ｖであるのに対し
周辺回路部には１０〜１２Ｖの電圧が加えられる。しか
るに、感光部のチャンネルストップを周辺回路部のチャ
ンネルストップと同時に形成すると、感光部のチャンネ
ルストップのＰＮ接合深さが必要以上に大きくなりこれ
に伴って画素領域が狭くなるという問題があった。For example, while the bias voltage of the photosensitive section is 1 to 2 V, a voltage of 10 to 12 V is applied to the peripheral circuit section. However, if the channel stop of the photosensitive section is formed at the same time as the channel stop of the peripheral circuit section, there is a problem that the PN junction depth of the channel stop of the photosensitive section becomes larger than necessary, and the pixel area becomes narrower accordingly.
即ら、周辺回路部のチャンネルストップは、しばしばフ
ィールド酸化膜の下に形成されるが、この場合、チャン
ネルストップのインブラ工程はフィールド酸化膜形成工
程の前に行なうことが必要であり、フィールド酸化Ｊ３
よびその後に行なわれるゲート酸化の工程を経ると、チ
ャンネルストップのインプラ属のＰＮ接合の出来上がり
深さは大きなものとなる。同一のインプラで感光部のチ
ャンネルストップを形成すると、第２図に破線で示すよ
うに感光部のチャンネルストップ１のＰＮ接合深さも大
きくなり、チャンネルストップ１の幅も拡がり、画素領
域２が狭くなり、このため撮像装首の感度が低くなると
いう問題があった。尚、第２図で、３はグー、ト酸化膜
、４はＣＶＤ等の工程によって堆積したＳ ｉ Ｏ２膜
、５は表面保護膜で、入射光はこれらの層を通して画素
領域に入る。That is, the channel stop in the peripheral circuit area is often formed under the field oxide film, but in this case, the in-blazing process for the channel stop must be performed before the field oxide film forming process, and the field oxide J3
After the subsequent gate oxidation step, the resulting depth of the channel stop implant PN junction becomes large. When the channel stop of the photosensitive area is formed using the same implant, the PN junction depth of the channel stop 1 of the photosensitive area increases, the width of the channel stop 1 also increases, and the pixel area 2 becomes narrower, as shown by the broken line in FIG. Therefore, there was a problem in that the sensitivity of the imaging neck device became low. In FIG. 2, 3 is a goo oxide film, 4 is a SiO2 film deposited by a process such as CVD, and 5 is a surface protection film, and incident light enters the pixel area through these layers.
（発明の目的）
本発明の目的は上記の問題を解決し、感度の高い固体搬
像装置を得ることができる製造方法を提供することにあ
る。(Objective of the Invention) An object of the present invention is to provide a manufacturing method capable of solving the above-mentioned problems and obtaining a solid-state image carrier with high sensitivity.
本発明の製造方法は、周辺回路部の素子分離のための第
１のチャンネルストップの形成と、感光部の画素分離の
ための第２のチャンネルストップの形成とを互いに別の
工程で行ない、前記第２のチャンネルストップの形成工
程にお番プる不純物のドープωを前記第１のチャンネル
ストップの形成工程に比べて少クシ、前記第２のチャン
ネルストップのＰＮ接合深さが前記第１のチャンネルス
トップに比べて浅くなるようにしたことを特徴とする。In the manufacturing method of the present invention, the formation of the first channel stop for element isolation in the peripheral circuit section and the formation of the second channel stop for pixel isolation in the photosensitive section are performed in separate steps, and The impurity doping ω used in the process of forming the second channel stop is smaller than that in the process of forming the first channel stop, and the PN junction depth of the second channel stop is smaller than that of the first channel stop. It is characterized by being shallower than the stop.
第１図は、本発明一実施例の固体銀像装置の製造方法の
各工程におｊｆる素子の状態を示す。同図において鎖線
の左側には、周辺回路部を、右側には感光部を示す。FIG. 1 shows the states of elements in each step of a method for manufacturing a solid silver image device according to an embodiment of the present invention. In the figure, the left side of the chain line shows the peripheral circuit section, and the right side shows the photosensitive section.
まず、同図（ａ）に示すように、Ｎ型基板１１にＰウェ
ル１２を形成する。尚同図で１３はＳ！０２膜である。First, as shown in FIG. 2A, a P well 12 is formed in an N type substrate 11. In the same figure, 13 is S! 02 film.
次に同図（ｂ）に示すように、周辺回路の素子分離のた
めのチャンネルストップ１４を形成する。次に、同図（
Ｃ）に示すように、フィールド酸化膜１５およびゲート
酸化膜１６を形成する。この結果、周辺回路部のチャン
ネルストップは破線で示すように、深さ、幅ともに大き
くなる。しかる後、同図（ｄ）に示すように感光部に画
素分離のためのチャンネルストップ１７を形成する。こ
のときのドープ岳は、周辺回路部のチャンネルストップ
１４に比べ少なくする。次に、同図（ｅ）に示すように
、感光部の全面にＮ型の不純物を注入（インプラ）して
画素領域１８を形成する。その後、同図（ｆ’）に示す
ように、ＣＶＤ工程等によって、５ｔＯ２膜１９を堆積
形成し、次いで表面保護膜２０を形成する。この結果、
感光部のチャンネルストップ１７も破線で示すように若
干拡がる。しかし、この拡がりは従来の方法によるとき
のそれに比べはるかに小さい。Next, as shown in FIG. 3B, a channel stop 14 is formed to isolate elements of the peripheral circuit. Next, the same figure (
As shown in C), a field oxide film 15 and a gate oxide film 16 are formed. As a result, the channel stop in the peripheral circuit section becomes larger in both depth and width, as shown by the broken line. Thereafter, a channel stop 17 for pixel separation is formed on the photosensitive portion, as shown in FIG. 3(d). The dope peak at this time is made smaller than the channel stop 14 in the peripheral circuit section. Next, as shown in FIG. 4E, a pixel region 18 is formed by injecting N-type impurities into the entire surface of the photosensitive area. Thereafter, as shown in FIG. 4(f'), a 5tO2 film 19 is deposited by a CVD process or the like, and then a surface protection film 20 is formed. As a result,
The channel stop 17 of the photosensitive section is also slightly expanded as shown by the broken line. However, this spread is much smaller than that when using conventional methods.
これはチャンネルストップ１７の形成後には、ＰＮ接合
深さを著しく大きくするような高温・長時間の工程がな
いためである。This is because after the channel stop 17 is formed, there is no high-temperature, long-time process that would significantly increase the PN junction depth.
尚、チャンネルストップ１４の形成工程とフィールド酸
化膜形成工程とをセルファラインで形成するＬＯＧＯ８
工程と組合せることも可能で、この場合もチャンネルス
トップ１７を別の工程で形成することにより同様の効果
が得られる。Note that in LOGO8, the process of forming the channel stop 14 and the process of forming the field oxide film are performed by self-line.
It is also possible to combine this process with other processes, and in this case as well, the same effect can be obtained by forming the channel stop 17 in a separate process.
以上のように、本発明によれば、感光部のチャンネルス
トップの形成を、周辺回路部のチャンネルストップの形
成とは別の工程で行ない、感光部のチャンネルストップ
１７の形成に用いる不純物・のドープ化を少なくしたの
で、チャンネルストップの拡張を抑制し、画素領域の面
積を大きくすることができる。従って、感度の高い固体
銀像装置を得ることができる。As described above, according to the present invention, the channel stop of the photosensitive area is formed in a separate process from the formation of the channel stop of the peripheral circuit area, and the impurity doping used for forming the channel stop 17 of the photosensitive area is performed. Since the number of pixels is reduced, expansion of the channel stop can be suppressed and the area of the pixel region can be increased. Therefore, a solid silver image device with high sensitivity can be obtained.
第１図（ａ）〜（ｆ）は本発明一実施例の製造方法の各
工程における素子の状態を示す断面図、第２図は従来の
方法で形成した固体搬像装置の画素部を示す断面図であ
る。
１１・・・Ｎ型基板、１２・・・Ｐウェル、１４・・・
フィールド酸化膜、１６・・・ゲート酸化膜、１７・・
・画素部のチャンネルストップ、１８・・・画素領域。
出願人代理人 佐 藤 −雄
図面の浄書（内容に変更な１゛
ｒス
嘔
色 １ に
に １ ｚ
手続 ネ［１１正 書 （方式）
昭和６１年４月２日FIGS. 1(a) to (f) are cross-sectional views showing the states of elements in each step of the manufacturing method according to an embodiment of the present invention, and FIG. 2 shows a pixel portion of a solid-state image forming device formed by a conventional method. FIG. 11...N type substrate, 12...P well, 14...
Field oxide film, 16... Gate oxide film, 17...
- Channel stop of pixel section, 18...pixel area. Applicant's agent Sato - Engraving of the drawings (if there are any changes to the contents) Procedures Ne [11 Official transcription (method) April 2, 1986
Claims (1)
て電荷を発生する感光部と、前記感光部で発生された電
荷に応じて電気信号を発生する周辺回路とを具備した固
体撮像装置の製造方法において、前記周辺回路部の素子
分離のための第１のチャンネルストップの形成と、前記
感光部の画素分離のための第２のチャンネルストップの
形成とを互いに別の工程で行ない、前記第２のチャンネ
ルストツプの形成工程における不純物のドープ量を前記
第１のチャンネルストップの形成工程に比べて少なくし
、前記第２のチャンネルストップのＰＮ接合深さが前記
第１のチャンネルストップに比べて浅くなるようにした
ことを特徴とする固体撮像装置の製造方法。 ２、前記第２のチャンネルストップの形成を、前記第１
のチャンネルストップの形成およびその後に行なわれる
ゲート酸化膜の形成よりも後に行なうことを特徴とする
特許請求の範囲第１項記載の方法。[Scope of Claims] 1. A photosensitive section that is integrated on a semiconductor substrate and generates electric charge according to the amount of incident light, and a peripheral circuit that generates an electric signal according to the electric charge generated in the photosensitive section. In the method for manufacturing a solid-state imaging device, forming a first channel stop for element isolation in the peripheral circuit section and forming a second channel stop for pixel isolation in the photosensitive section are separated from each other. The amount of impurity doped in the step of forming the second channel stop is smaller than that of the step of forming the first channel stop, and the PN junction depth of the second channel stop is equal to the depth of the PN junction of the second channel stop. 1. A method of manufacturing a solid-state imaging device, characterized in that the channel stop is shallower than the channel stop of No. 1. 2. Forming the second channel stop in the first
2. The method according to claim 1, wherein the step is performed after the formation of the channel stop and the subsequent formation of the gate oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60297562A JPS62156861A (en) | 1985-12-28 | 1985-12-28 | Manufacture of solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60297562A JPS62156861A (en) | 1985-12-28 | 1985-12-28 | Manufacture of solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62156861A true JPS62156861A (en) | 1987-07-11 |
Family
ID=17848149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60297562A Pending JPS62156861A (en) | 1985-12-28 | 1985-12-28 | Manufacture of solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62156861A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143585A (en) * | 1997-07-04 | 2000-11-07 | Nec Corporation | Method of manufacturing solid state image sensing device |
-
1985
- 1985-12-28 JP JP60297562A patent/JPS62156861A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6143585A (en) * | 1997-07-04 | 2000-11-07 | Nec Corporation | Method of manufacturing solid state image sensing device |
| US6469329B1 (en) | 1997-07-04 | 2002-10-22 | Nec Corporation | Solid state image sensing device and method of producing the same |
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