JPS6147664A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6147664A JPS6147664A JP59169705A JP16970584A JPS6147664A JP S6147664 A JPS6147664 A JP S6147664A JP 59169705 A JP59169705 A JP 59169705A JP 16970584 A JP16970584 A JP 16970584A JP S6147664 A JPS6147664 A JP S6147664A
- Authority
- JP
- Japan
- Prior art keywords
- signal processing
- diffusion layer
- processing circuit
- section
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000005468 ion implantation Methods 0.000 claims abstract description 9
- 238000009792 diffusion process Methods 0.000 abstract description 22
- 150000002500 ions Chemical class 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明はホトダイオード部とその信号処理回路を一体化
したバイポーラＩＣに係る半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a semiconductor device related to a bipolar IC that integrates a photodiode section and its signal processing circuit.
〈従来技術〉
第２図に従来例を示す、Ａはホトダイオード部、Ｂは信
号処理回路部で画部分Ａ、Ｂが一体化して形成されてい
る。ホトダイオード部ＡはＰ型基板１にＮ９埋込拡散層
２、Ｎ型エピタキシャルＮ３゜Ｐ４４拡散４． Ｎ＋拡
散層６が層状に形成されて構成される。<Prior Art> A conventional example is shown in FIG. 2, where A is a photodiode section, B is a signal processing circuit section, and image sections A and B are formed integrally. The photodiode section A includes a P-type substrate 1, an N9 buried diffusion layer 2, an N-type epitaxial N3°P44 diffusion 4. The N+ diffusion layer 6 is formed in layers.
また信号処理回路部ＢはＰ型基板１にＮ＋埋込拡散層２
、Ｎ型エピタキシャル層３．Ｐ１１拡散４、Ｎ０拡散層
５，６が層状に形成されて構成される。７はＰ１分離拡
散層である。In addition, the signal processing circuit section B has an N+ buried diffusion layer 2 on a P type substrate 1.
, N-type epitaxial layer 3. The P11 diffusion layer 4 and the N0 diffusion layers 5 and 6 are formed in layers. 7 is a P1 separation diffusion layer.
ところでホトダイオードと信号処理回路を一体化したバ
イポーラＩＣを高速化する場合、ホトダイオード部と信
号処理回路部のそれぞれを高速化する必要がある。その
ためには一般的にはホトダイオード部はその容量の低減
を図る必要があり、信号処理回路部は小数キャリアの蓄
積時間の低減が必要である。しかしながら、従来はこの
ような必要性を満した半導体装置の提供がなされていな
かった。By the way, when increasing the speed of a bipolar IC that integrates a photodiode and a signal processing circuit, it is necessary to increase the speed of each of the photodiode section and the signal processing circuit section. To this end, it is generally necessary to reduce the capacitance of the photodiode section, and it is necessary to reduce the accumulation time of minority carriers in the signal processing circuit section. However, conventionally, no semiconductor device has been provided that meets these needs.
く目的〉
本発明はホトダイオードと信号処理回路を一体化したバ
イポーラＩＣに係る半導体装置において高速化を実現で
きる装置の提供を目的とする。Purpose of the present invention An object of the present invention is to provide a device that can realize higher speed in a semiconductor device related to a bipolar IC that integrates a photodiode and a signal processing circuit.
く構成〉
本発明者らは上記目的を達成するために、上記第１図に
おけるホトダイオード部ＡＯＮ型エピタキシャルＮ３の
比抵抗を大きくすることによりホトダイオード部の容量
を低減でき、また信号処理回路部ＢＯＮ型エピタキシャ
ル層３の比抵抗を小さくすることにより信号処理回路部
Ｂの小数キャリアの蓄積時間を低減できることに着目し
た結果、本発明をなした。すなわち、本発明はホトダイ
オード部とその信号処理回路部を一体化したバイポーラ
１．Ｃにおいて、ホトダイオード部以外の信号処理回路
部のエピタキシャル層の比抵抗をイオン注入により低下
させたことを特徴とする半導体装置である。In order to achieve the above object, the present inventors have made it possible to reduce the capacitance of the photodiode section by increasing the specific resistance of the photodiode section AON type epitaxial N3 in FIG. The present invention was achieved by focusing on the fact that the accumulation time of minority carriers in the signal processing circuit section B can be reduced by reducing the resistivity of the epitaxial layer 3. That is, the present invention provides a bipolar 1.1. The semiconductor device in C is characterized in that the specific resistance of the epitaxial layer of the signal processing circuit section other than the photodiode section is lowered by ion implantation.
〈実施例〉
第１図は本発明の半導体装置の実施例を示す断面図であ
る。第１図中において第１図の符号と同じ符号は同じ層
ないし領域を示すものとする。<Embodiment> FIG. 1 is a sectional view showing an embodiment of a semiconductor device of the present invention. In FIG. 1, the same reference numerals as those in FIG. 1 indicate the same layers or regions.
ずな゛わち本発明はホトダイオード部Ａを除いた信号処
理回路部ＢのＮ−型エピタキシャル層３内にイオン注入
によりＮ型拡散層８を形成している。That is, in the present invention, the N type diffusion layer 8 is formed in the N- type epitaxial layer 3 of the signal processing circuit section B excluding the photodiode section A by ion implantation.
このＮ型拡散Ｎ８はＮ４埋込拡散層２とタッチさビても
よい。またＮ型拡散層８は耐圧の点よりＰ＋分離拡散層
７とはタッチさせないのがよい。イオン注入は２種類以
上のイオンを注入してもよい。This N-type diffusion N8 may touch the N4 buried diffusion layer 2. Further, from the viewpoint of breakdown voltage, it is preferable that the N-type diffusion layer 8 not touch the P+ isolation diffusion layer 7. In the ion implantation, two or more types of ions may be implanted.
また信号処理部では必要に応じてイオン注入しない部分
を作ってもよい。Further, in the signal processing section, a portion where ions are not implanted may be created as necessary.
イオン注入の工程はＰ“分離拡散層工程後、又はＰ＋分
離拡散工程中に行なう。が、他の適当な時期に行なって
もよい。The ion implantation process is performed after the P'' isolation diffusion layer process or during the P+ isolation diffusion process, but may be performed at any other suitable time.
またイオン注入の他の通常の不純物拡散によりＮ型拡散
層８を形成することも可能であるが、一般的に不純物濃
度は低濃度であり、またバラツキを低減する必要もある
からイオン注入がよい。It is also possible to form the N-type diffusion layer 8 by ordinary impurity diffusion other than ion implantation, but ion implantation is preferable since the impurity concentration is generally low and it is also necessary to reduce variations. .
〈効果〉
本発明は以上の構成よりなり、ホトダイオード部とその
信号処理回路部を一体化したバイポーラＩＣにおいて、
ホトダイオード部以外の信号処理回路部のエピタキシャ
ル層の比抵抗をイオン注入により低下させたので、ホト
ダイオードと信号処理回路を一体化したバイポーラＩＣ
において、信号処理速度の高速化が達成できた。<Effects> The present invention has the above-described configuration, and in a bipolar IC in which a photodiode section and its signal processing circuit section are integrated,
Since the specific resistance of the epitaxial layer in the signal processing circuit section other than the photodiode section has been lowered by ion implantation, it is possible to create a bipolar IC that integrates the photodiode and signal processing circuit.
, we were able to achieve faster signal processing speed.
第１図は本発明の半導体装置の実施例を示す断面図、第
２図は従来の半導体装置の断面図である。
Ａ−’ホトダイオード部
Ｂ・・・信号処理回路部
３・・・エピタキシャル層
８・・・Ｎ型拡散層FIG. 1 is a sectional view showing an embodiment of the semiconductor device of the present invention, and FIG. 2 is a sectional view of a conventional semiconductor device. A-' Photodiode section B... Signal processing circuit section 3... Epitaxial layer 8... N-type diffusion layer
Claims (1)
イポーラＩＣにおいて、ホトダイオード部以外の信号処
理回路部のエピタキシャル層の比抵抗をイオン注入によ
り低下させたことを特徴とする半導体装置。1. A semiconductor device comprising a bipolar IC that integrates a photodiode section and its signal processing circuit section, characterized in that the specific resistance of an epitaxial layer of the signal processing circuit section other than the photodiode section is lowered by ion implantation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59169705A JPS6147664A (en) | 1984-08-13 | 1984-08-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59169705A JPS6147664A (en) | 1984-08-13 | 1984-08-13 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6147664A true JPS6147664A (en) | 1986-03-08 |
Family
ID=15891344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59169705A Pending JPS6147664A (en) | 1984-08-13 | 1984-08-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6147664A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63122164A (en) * | 1986-11-11 | 1988-05-26 | Pioneer Electronic Corp | Optical sensor integrated circuit |
| JPS63182874A (en) * | 1987-01-24 | 1988-07-28 | Hamamatsu Photonics Kk | Semiconductor photodetector |
| US5252851A (en) * | 1991-01-30 | 1993-10-12 | Sanyo Electric Co., Ltd. | Semiconductor integrated circuit with photo diode |
| JP2006128724A (en) * | 2006-01-23 | 2006-05-18 | Toshiba Corp | Solid-state imaging device |
-
1984
- 1984-08-13 JP JP59169705A patent/JPS6147664A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63122164A (en) * | 1986-11-11 | 1988-05-26 | Pioneer Electronic Corp | Optical sensor integrated circuit |
| JPS63182874A (en) * | 1987-01-24 | 1988-07-28 | Hamamatsu Photonics Kk | Semiconductor photodetector |
| US5252851A (en) * | 1991-01-30 | 1993-10-12 | Sanyo Electric Co., Ltd. | Semiconductor integrated circuit with photo diode |
| JP2006128724A (en) * | 2006-01-23 | 2006-05-18 | Toshiba Corp | Solid-state imaging device |
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