JPS6214946B2 - - Google Patents

Info

Publication number
JPS6214946B2
JPS6214946B2 JP52135523A JP13552377A JPS6214946B2 JP S6214946 B2 JPS6214946 B2 JP S6214946B2 JP 52135523 A JP52135523 A JP 52135523A JP 13552377 A JP13552377 A JP 13552377A JP S6214946 B2 JPS6214946 B2 JP S6214946B2
Authority
JP
Japan
Prior art keywords
charge transfer
gate electrode
transfer element
charge
element group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52135523A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5468190A (en
Inventor
Masanobu Morishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP13552377A priority Critical patent/JPS5468190A/ja
Publication of JPS5468190A publication Critical patent/JPS5468190A/ja
Publication of JPS6214946B2 publication Critical patent/JPS6214946B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP13552377A 1977-11-10 1977-11-10 Two-dimensional charge transfer element and its driving method Granted JPS5468190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13552377A JPS5468190A (en) 1977-11-10 1977-11-10 Two-dimensional charge transfer element and its driving method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13552377A JPS5468190A (en) 1977-11-10 1977-11-10 Two-dimensional charge transfer element and its driving method

Publications (2)

Publication Number Publication Date
JPS5468190A JPS5468190A (en) 1979-06-01
JPS6214946B2 true JPS6214946B2 (enrdf_load_stackoverflow) 1987-04-04

Family

ID=15153750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13552377A Granted JPS5468190A (en) 1977-11-10 1977-11-10 Two-dimensional charge transfer element and its driving method

Country Status (1)

Country Link
JP (1) JPS5468190A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928062B2 (ja) * 1979-09-10 1984-07-10 株式会社東芝 電荷転送素子におけるバイアス電荷の形成法

Also Published As

Publication number Publication date
JPS5468190A (en) 1979-06-01

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