JPS62149433A - Copper clad molybdenum plate and manufacture thereof - Google Patents

Copper clad molybdenum plate and manufacture thereof

Info

Publication number
JPS62149433A
JPS62149433A JP29036785A JP29036785A JPS62149433A JP S62149433 A JPS62149433 A JP S62149433A JP 29036785 A JP29036785 A JP 29036785A JP 29036785 A JP29036785 A JP 29036785A JP S62149433 A JPS62149433 A JP S62149433A
Authority
JP
Japan
Prior art keywords
copper
clad
plate
laminate
molybdenum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29036785A
Other languages
Japanese (ja)
Inventor
昇 北森
高橋 傳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP29036785A priority Critical patent/JPS62149433A/en
Publication of JPS62149433A publication Critical patent/JPS62149433A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [発明の技術分野] 本発明は銅(Cu)クラッドモリブデン(Mo)板とそ
の製造方法に関し、更に詳しくは、Mo基板とそれにク
ラッドされたCuとの接合強度が大であり、しかもその
Cuには“ふくれ”等の表面欠陥の少ないCuクラッド
Mo板とその新規な製造方法に関する。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a copper (Cu) clad molybdenum (Mo) board and a method for manufacturing the same, and more specifically, the present invention relates to a copper (Cu) clad molybdenum (Mo) board and a method for manufacturing the same. Moreover, the present invention relates to a Cu-clad Mo plate whose Cu has few surface defects such as "bulges" and a novel manufacturing method thereof.

[発明の技術的背景とその問題点] 各種整渣素子を製造する際の半導体基板として、Mo板
の片面若しくは両面にCuをクラッドしたものが用いら
れている。
[Technical Background of the Invention and Problems thereof] A Mo plate clad with Cu on one or both sides is used as a semiconductor substrate for manufacturing various types of filtering elements.

このCuクラッドMo板は、例えば基板であるMo板の
片面若しくは両面に所定の厚みでCuメッキ膜が形成さ
れている。
In this Cu-clad Mo board, a Cu plating film is formed with a predetermined thickness on one or both sides of a Mo board that is a substrate, for example.

しかしながら、この方法の場合、得られたメッキ板はM
o面とCu面との界面における接合強度がそれ程大きく
なく、ハンドリング時または使用時に不測の外力によっ
て両者が剥離するという現象を生ずることがある。また
、Cuメッキ膜の形成時に、例えば適用した電IW条件
によってはMO表面とCuメッキ膜との間に酸化物が包
含されることがあり、その結果、Cuメッキ層に°゛ふ
くれ″が部分的に生じて、接合強度を低下せしめること
はもち論、Cuメッキ層の表面欠陥を招くことがある。
However, in the case of this method, the plated plate obtained is M
The bonding strength at the interface between the o-plane and the Cu plane is not so great, and an unexpected external force may cause the two to peel off during handling or use. Furthermore, during the formation of the Cu plating film, oxides may be included between the MO surface and the Cu plating film depending on the applied electric IW conditions, and as a result, the Cu plating layer may have some "bulges". This may not only reduce the bonding strength but also cause surface defects in the Cu plating layer.

上記した問題は、Cuメッキ膜に代えてCu箔を用いた
場合にも生じていることであり、その解決は強く求めら
れている。
The above-mentioned problem also occurs when Cu foil is used in place of the Cu plating film, and a solution to this problem is strongly desired.

[発明の目的] 本発明は、上記要請に応えるべく成されたものであり、
MoとCu間の接合強度が大きくしかもCuクラツド膜
にも“ふくれ°′等の表面欠陥が少ないCuクラッドM
o板とその製造方法の提供を目的とする。
[Object of the invention] The present invention has been made in order to meet the above requirements, and
Cu-clad M has high bonding strength between Mo and Cu, and the Cu-clad film has few surface defects such as bulges.
The purpose is to provide an o-board and its manufacturing method.

[発明の概要] 本発明者らは上記目的を達成すべく鋭意研究を重ねる過
程で、MOとCu間の接合強度は熱間圧着時における両
者間の相互固溶の程度に影響されること、モしてCuク
ラツド膜の表面欠陥は熱間圧着時に酸化物が解離するこ
とによって生ずるものとのdG実を確認した。したがっ
て、MOとCu間に両者に対して相互固溶能に優れた中
間層を介在せしめ、しかも酸化物のない状態で熱間圧着
および相互拡散処理を施せば、上記問題点を解消し得る
との着想を抱き1種々の実験を経た結果、上記中間層と
してはニッケル(Ni)層がCuに対してもまたMOに
対しても良好な固溶能を有するとの事実を見出し、本発
明のクラツド板とその製造方法を開発するに到った。
[Summary of the Invention] In the course of intensive research to achieve the above object, the present inventors discovered that the bonding strength between MO and Cu is affected by the degree of mutual solid solution between them during hot press bonding. Furthermore, it was confirmed that the surface defects of the Cu clad film were caused by the dissociation of oxides during hot press bonding. Therefore, it is believed that the above problems can be solved by interposing an intermediate layer between MO and Cu that has excellent mutual solid solubility for both, and by performing hot pressing and mutual diffusion treatment in the absence of oxides. As a result of carrying out various experiments with the idea of We have developed a clad plate and its manufacturing method.

すなわち、本発明のCuクラッドMo板の構成は、M 
o ’l板とCuとがNi層を介して接合されているこ
とを特徴とし、その製造方法は、Mo基板の少なくとも
片面若しくは両面にNi層を介してCuを積層したのち
非酸化性雰囲気中で熱間圧着処理を施して積層体とする
工程;得られた積層体を非酸化性雰囲気中で加熱処理し
て、M。
That is, the configuration of the Cu-clad Mo plate of the present invention is M
It is characterized in that the o'l board and Cu are bonded via a Ni layer, and the manufacturing method thereof is to laminate Cu on at least one or both sides of a Mo substrate via a Ni layer, and then laminate it in a non-oxidizing atmosphere. Step of hot-pressing to form a laminate; heat-treating the obtained laminate in a non-oxidizing atmosphere to obtain M.

基板とNi層およびCuとNi層の各界面に拡散処理を
施す工程;得られた拡散処理積層体に圧延処理を施す工
程;とを具備することを特徴とする。
It is characterized by comprising the following steps: performing a diffusion treatment on each interface between the substrate and the Ni layer, and between the Cu and Ni layers; and performing a rolling treatment on the obtained diffusion-treated laminate.

本発明のクラツド板は、M o Q’^板とその片面若
しくは両面にクラッドされたCu箔とその中間に位置す
るNi層とから成り、h10基板の表面とNi層との界
面にはこれらの41互拡散層が存在しまた同時にCu箔
の表面と!Ji層との界面にはこれらの相互拡散層が存
在している積層体である。
The clad plate of the present invention consists of a M o Q'^ plate, a Cu foil clad on one or both sides of the plate, and a Ni layer located between the two. 41 There is an interdiffused layer and at the same time the surface of the Cu foil! This is a laminate in which these mutual diffusion layers exist at the interface with the Ji layer.

このクラツド板は次のような工程を経て製造することが
できる。
This clad plate can be manufactured through the following steps.

第1の工程は、Mo基板、Ni中間層、Cu箔(例えば
無酸素Cu)をこの順序で積層し、得られた積層体を還
元雰囲気中で熱間圧着して一体化する工程である。
The first step is to laminate a Mo substrate, a Ni intermediate layer, and a Cu foil (for example, oxygen-free Cu) in this order, and to integrate the resulting laminate by hot pressing in a reducing atmosphere.

Mo基板にクラツーすべきCu箔はこの場合無酸素銅か
ら構成されることが好ましい、これは酸素の存在がクラ
ツド板に及ぼす悪影テは上記したとおりであるからであ
る。Mo基板とCu箔の間に介在させるNi中間層とし
ては、例えばNi箔、Niメッキ膜をあげることができ
る。これらの層厚は格別限定されるわけではないが、こ
の中間層はあくまでもMoとCuを接合する媒体として
機能すべきであることからして、通常はCu箔の厚みの
l〜50%程度に設定される。
In this case, the Cu foil to be applied to the Mo substrate is preferably composed of oxygen-free copper, since the presence of oxygen has an adverse effect on the clad plate as described above. Examples of the Ni intermediate layer interposed between the Mo substrate and the Cu foil include a Ni foil and a Ni plating film. The thickness of these layers is not particularly limited, but since this intermediate layer should function as a medium for bonding Mo and Cu, it is usually about 1 to 50% of the thickness of the Cu foil. Set.

これら3層の積層操作は大気中で行なわれるので、当然
、各層間には空気(酸素)が介在することになるが、し
かし、そのことは後述の工程をいずれも非酸化性雰囲気
下で進めることにより空気介在の不都合は解消される。
Since the lamination operation of these three layers is carried out in the atmosphere, naturally air (oxygen) will be present between each layer, but this means that all the steps described below are carried out in a non-oxidizing atmosphere. This eliminates the disadvantages of air intervention.

積層体の加熱圧着時における温度は、Cuの溶融温度よ
り低いことが必要であるが、あまり低い温度の場合は、
各層がリジッドであって圧着による一時的な接合効果の
向上は認められない。通常、温度は350〜t ooo
℃の範囲であることが好ましい。
The temperature during thermocompression bonding of the laminate needs to be lower than the melting temperature of Cu, but if the temperature is too low,
Each layer is rigid, and no temporary improvement in the bonding effect due to pressure bonding is observed. Usually the temperature is 350~toooo
Preferably, it is in the range of °C.

雰囲気は各層が酸化されない非酸化性雰囲気であること
が必要で具体的には水素雰囲気であることが好ましい。
The atmosphere needs to be a non-oxidizing atmosphere in which each layer is not oxidized, and specifically, a hydrogen atmosphere is preferable.

第2の工程は、第1の工程で得られた積層体に拡散処理
を施す工程である。第1の゛[程における各層の界面間
の接合は単なる。次械的な接合であるが、これをこの工
程では拡散用台の状態に転形せしめるのである。
The second step is a step of subjecting the laminate obtained in the first step to a diffusion treatment. The bonding between the interfaces of each layer in the first step is simple. This is a mechanical bonding process, but in this step it is transformed into a diffusion table.

すなわち、Mo基板とNi[]間層との接触界面、Ni
中間層とCumとの接触界面、これら2つの界面を拡散
接合せしめろ。相互拡散を起さないMOとCuとの間を
、Mo、Cuのいずれとも相互拡散するNiを介17て
接合するのである。
That is, the contact interface between the Mo substrate and the Ni[] layer, the Ni
Diffusion bond the contact interface between the intermediate layer and Cum and these two interfaces. MO and Cu, which do not cause interdiffusion, are bonded through Ni 17, which interdiffuses with both Mo and Cu.

具体的には、上記積層体を所定温度の還元雰囲気中に保
持すればよい。雰囲気は例えば水素雰囲気であることが
好ましい、温度が低すぎると各界面間における拡散反応
は有効に進行せず接合強度の白土効果は小さく、逆に1
080℃を超えるとCu箔が溶融してしまう。通常は3
50〜tooo℃、好ましくは6 (l 0〜950℃
である。
Specifically, the laminate may be held in a reducing atmosphere at a predetermined temperature. It is preferable that the atmosphere is, for example, a hydrogen atmosphere.If the temperature is too low, the diffusion reaction between each interface will not proceed effectively and the clay effect on the bonding strength will be small;
If the temperature exceeds 080°C, the Cu foil will melt. Usually 3
50~tooo℃, preferably 6 (l 0~950℃
It is.

また、保持時間があまり長く鷹ると、中間層としてのN
iは全てMoとCuに拡散してしまう。
Also, if the retention time is too long, the N
All i diffuses into Mo and Cu.

このような状態になっても、結果的にはMOとCu間の
拡散接合は達成されているのでその接合強度も高い。し
か12、若干なりともN1中間層を残置せしめた方が全
体としての接合強度は犬きくなる。Ni中間層の残置若
(逆にいえば、Niの拡散呈)は、温度一定の場合、保
持時間が短いほど多い。したがって、保持時間を適宜変
化ごせることにより、残置するNi中間層の厚みを変化
させる。通常、上記した温度の場合、保持時1)は5分
以上であればよい。
Even in such a state, diffusion bonding between MO and Cu is achieved and the bonding strength is high. However, if the N1 intermediate layer is left to some extent, the overall bonding strength will be stronger. When the temperature is constant, the shorter the retention time, the more the Ni intermediate layer remains (or, conversely, the diffusion of Ni). Therefore, by appropriately changing the holding time, the thickness of the remaining Ni intermediate layer can be changed. Normally, in the case of the above-mentioned temperature, holding time 1) may be 5 minutes or more.

第3の工程は、第2の工程で得られた拡散処理積層体を
所望の板厚にまで圧延する工程である。
The third step is a step of rolling the diffusion-treated laminate obtained in the second step to a desired thickness.

このときの圧延操作は、格別限定されるものではなく、
常法を適宜に適用すればよい。
The rolling operation at this time is not particularly limited,
Common law may be applied as appropriate.

[発明の実施例] 実施例 厚み10ma+のMo板の片面に厚み0.3mmのN1
箔、厚み1.5mmの無酸素Cu箔を順次重ね合わせ、
全体を温度800°Cで加熱圧着して一体化した。雰囲
気は水素であった。全体の厚みは8mmであった。
[Embodiments of the invention] Example N1 with a thickness of 0.3 mm on one side of a Mo plate with a thickness of 10 ma+
Foil, oxygen-free Cu foil with a thickness of 1.5 mm is layered one after another,
The whole was heat-pressed and integrated at a temperature of 800°C. The atmosphere was hydrogen. The total thickness was 8 mm.

得られた積層体を850℃の水素炉中に30分放置して
拡散処理を施したのち通常のロール圧延を施して厚み0
.5mmのクラツド板を得た。
The obtained laminate was left in a hydrogen furnace at 850°C for 30 minutes to undergo a diffusion treatment, and then rolled with normal rolls to a thickness of 0.
.. A 5 mm clad plate was obtained.

得られたクラツド板におけるMo板と表面Cu箔との密
着度を図に示すような方法により折り曲げ回数として測
定した。すなわち、角部が4Rである2個の台座1a、
lbの間に図のようにクラツド板2を挟んで圧着し、こ
のクラツド板2を左右に90度折り曲げる操作を反復し
、クラツド板2のCuが剥離するまでの折り曲げ回数を
測定した。結果は3〜6回であった。なお、折り曲げ回
数は1往復の折り曲げを1回と数える。
The degree of adhesion between the Mo plate and the surface Cu foil in the obtained clad plate was measured as the number of bends by the method shown in the figure. That is, two pedestals 1a whose corners are 4R,
The cladding plate 2 was sandwiched and crimped between the cladding plates 1 and lb as shown in the figure, and the operation of bending the cladding plate 2 by 90 degrees left and right was repeated, and the number of times of bending until the Cu of the cladding plate 2 peeled off was measured. The results were 3 to 6 times. In addition, the number of times of bending is counted as one bending back and forth.

また、表面Cu箔の表面状態を詳細に肉限観察したとこ
ろ、“ふくれ“′は皆無であった。
Further, when the surface state of the surface Cu foil was closely observed, there was no "bulge" at all.

比較例 実施例で用いたMo板の片面に厚みll−15JiのC
uメンキ膜を形成した。
Comparative Example C with a thickness of ll-15Ji was applied to one side of the Mo plate used in the example.
A U-menki film was formed.

実施例と同様の方法でCuメンキ膜を有するMo板の折
り曲げ試験を行ったところ、折り曲げ間物1±0〜1回
であった6 [発明の効果] 以上の説明で明らかなように、本発明方法で製造された
CuクラッドMo板はCuとMo間の接合強度が大きく
またクラッドされたCu表面にも゛ふくれパなとの欠陥
は存在しないので例えば半導体基板として使用したとき
、ハンドリングや使用時における信頼性が高く、Cu表
面への他の部材の例えば半田づけ操作時にあってもその
操作が行ない易くなり、その工業的価値は大である。
When a bending test was carried out on a Mo plate having a Cu coating film in the same manner as in the example, the number of bending errors was 1±0 to 1.6 [Effects of the Invention] As is clear from the above explanation, The Cu-clad Mo board manufactured by the invention method has a high bonding strength between Cu and Mo, and there are no defects such as swelling on the clad Cu surface, so it is easy to handle and use when used as a semiconductor substrate, for example. It has high reliability and is easy to perform, for example, when soldering other components to the Cu surface, and has great industrial value.

【図面の簡単な説明】[Brief explanation of drawings]

図は、クランド板におけるMoノ、(板とクラ、ドCu
箔との密着度の評価方法を説明するための図である。
The figure shows Mo in the clamp plate, (plate and clamp, de Cu)
It is a figure for explaining the evaluation method of the degree of adhesion with foil.

Claims (3)

【特許請求の範囲】[Claims] (1)モリブデン基板と銅とがニッケル層を介して接合
されていることを特徴とする銅クラッドモリブデン板。
(1) A copper-clad molybdenum board characterized in that a molybdenum substrate and copper are bonded via a nickel layer.
(2)銅が無酸素銅である特許請求の範囲第1項記載の
銅クラッドモリブデン板。
(2) The copper-clad molybdenum plate according to claim 1, wherein the copper is oxygen-free copper.
(3)モリブデン基板の少なくとも片面若しくは両面に
ニッケル層を介して銅を設けたのち非酸化性雰囲気中で
熱間圧着処理を施して積層体とする工程; 得られた積層体を非酸化性雰囲気中で加熱処理して、モ
リブデン基板とニッケル層および銅とニッケル層の各界
面に拡散処理を施す工程; 得られた拡散処理積層体に圧延処理を施す工程; とを具備することを特徴とする銅クラッドモリブデン板
の製造方法。
(3) Step of providing copper via a nickel layer on at least one or both sides of a molybdenum substrate and then subjecting it to hot-pressing treatment in a non-oxidizing atmosphere to form a laminate; a step of performing a diffusion treatment on each interface between the molybdenum substrate and the nickel layer and a copper and nickel layer by heating in the wafer; a step of performing a rolling treatment on the obtained diffusion-treated laminate; Method for manufacturing copper-clad molybdenum plates.
JP29036785A 1985-12-25 1985-12-25 Copper clad molybdenum plate and manufacture thereof Pending JPS62149433A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29036785A JPS62149433A (en) 1985-12-25 1985-12-25 Copper clad molybdenum plate and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29036785A JPS62149433A (en) 1985-12-25 1985-12-25 Copper clad molybdenum plate and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS62149433A true JPS62149433A (en) 1987-07-03

Family

ID=17755112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29036785A Pending JPS62149433A (en) 1985-12-25 1985-12-25 Copper clad molybdenum plate and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS62149433A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007053246A (en) * 2005-08-18 2007-03-01 Toshiba Corp Heat dissipation substrate and semiconductor device using it

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144139A (en) * 1983-02-07 1984-08-18 Sumitomo Metal Mining Co Ltd Manufacture of molybdenum-based composite plate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144139A (en) * 1983-02-07 1984-08-18 Sumitomo Metal Mining Co Ltd Manufacture of molybdenum-based composite plate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007053246A (en) * 2005-08-18 2007-03-01 Toshiba Corp Heat dissipation substrate and semiconductor device using it
JP4707501B2 (en) * 2005-08-18 2011-06-22 株式会社東芝 Heat dissipation substrate and semiconductor device using the same

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