JPS6389477A - Method of directly joining cu base member to ceramic substrate - Google Patents
Method of directly joining cu base member to ceramic substrateInfo
- Publication number
- JPS6389477A JPS6389477A JP61235294A JP23529486A JPS6389477A JP S6389477 A JPS6389477 A JP S6389477A JP 61235294 A JP61235294 A JP 61235294A JP 23529486 A JP23529486 A JP 23529486A JP S6389477 A JPS6389477 A JP S6389477A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- bonding
- heating
- alloy
- based member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 title claims description 18
- 238000005304 joining Methods 0.000 title claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 14
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 229910052745 lead Inorganic materials 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 239000010949 copper Substances 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910000640 Fe alloy Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- 229910000711 U alloy Inorganic materials 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910017827 Cu—Fe Inorganic materials 0.000 description 1
- 229910004353 Ti-Cu Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011225 non-oxide ceramic Substances 0.000 description 1
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Landscapes
- Laminated Bodies (AREA)
- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は電子回路基板に用いられるセラミックス基体へ
のＣｕ系部材の接合技術に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a technique for bonding a Cu-based member to a ceramic substrate used in an electronic circuit board.
近年電子工業の発展にともない、電子回路基板等セラミ
ックス基体へ導電性金属を被覆する必要性が増加してい
る。しかし従来の接合方法は、例えばＴｉ −Ｃｕ箔の
如きロー材を介してセラミックス基体へ導電性金属とし
ての銅を接合する等工程が複雑であり、しかも高い接合
強度を得るためには加圧が必要である等の欠点を有して
いた。In recent years, with the development of the electronic industry, there has been an increasing need to coat ceramic substrates such as electronic circuit boards with conductive metals. However, conventional bonding methods require complicated steps, such as bonding copper as a conductive metal to a ceramic substrate via a brazing material such as Ti-Cu foil, and require pressure to obtain high bonding strength. It had disadvantages such as being necessary.
従って工程が簡便で、しかも高い接合強度が得られる接
合方法の開発が強く望まれており、この様な方法の一つ
として、ダイレクトボンド法即ちロー材等の接合剤を用
いないで、Ｃｕ箔等の金属をセラミックス基体へ直接接
合する方法が、例えば特開昭４９−１７３８１号発明が
提案されている。Therefore, there is a strong desire to develop a bonding method that has a simple process and can provide high bonding strength. A method of directly bonding metals such as metals to ceramic substrates has been proposed, for example, in the invention of JP-A-49-17381.
即ち上記発明によれば、Ｃｕ箔をセラミックス基体とし
てのＡ１凸と接触させた後、両者を酸素０．０３〜０１
％を含む不活性ガス雰囲気中で、１０６５〜１０８３℃
の範囲内の温度で加熱することにより、両者間に良好な
接合状態を得ることが出来る。That is, according to the above invention, after the Cu foil is brought into contact with the A1 protrusion as the ceramic substrate, both are exposed to oxygen of 0.03 to 0.1
1065-1083℃ in an inert gas atmosphere containing %
A good bonding state can be obtained between the two by heating at a temperature within the range of .
しかし上記ダイレクトボンド法は、加熱温度が１０６５
〜１０８３℃とわずか１８℃の範囲しかなく、温度コン
トロールが非常に困難であるという問題点を有している
。即ち前記銅箔とセラミックス基体との接合体を工業的
に生産するためには、非常に温度分布が均一な高価な炉
を用いなければならず、工程が簡便であるという利点が
あまり活かされない。However, in the above direct bonding method, the heating temperature is 1065
The temperature range is only 18°C, 1083°C, and has the problem that temperature control is extremely difficult. That is, in order to industrially produce the bonded body of the copper foil and the ceramic substrate, an expensive furnace with a very uniform temperature distribution must be used, and the advantage of a simple process is not fully utilized.
本発明は上記の点に鑑みなされたものであり、その目的
とするところは、Ｃｕ系部材を接合温度が１岑
比較的広い範囲でセラミックス基材に良好な接合強度を
もって直接接合させ得る方法を提供することである。The present invention has been made in view of the above points, and its purpose is to provide a method for directly bonding a Cu-based member to a ceramic base material with good bonding strength over a relatively wide range of bonding temperatures. It is to provide.
即ち本発明によるＣｕ系部材をセラミックス基体に直接
接合する方法は、該Ｃｕ系部材としてＦｅ又はＰｂを０
．１〜ＩＣＩ含有する一合金製部材を用い、セラミック
ス基体と接触させて配置し、酸素の存在下で加熱するこ
とを特徴とするものである。That is, in the method of directly bonding a Cu-based member to a ceramic substrate according to the present invention, the Cu-based member contains no Fe or Pb.
．． The method is characterized in that a member made of an alloy containing 1 to ICI is used, is placed in contact with a ceramic substrate, and is heated in the presence of oxygen.
本発明においては、Ｃｕ系部材としてＦｅ又はＰｂを含
有するＣｕ合金製部材を用いるため、接合温度範囲が広
くなり容易に接合を行なうことが出来る。In the present invention, since a Cu alloy member containing Fe or Pb is used as the Cu-based member, the joining temperature range is wide and joining can be easily performed.
即ち本発明においては、 Ｆａ又はＰｂを含有するＣｕ
４市
合金製部材をセラミックス基材と接触させて配置し、酸
素の存在下で加熱することにより、前記Ｃｕ合金製部材
とセラミックスとの界面にＣｕ −Ｆｅ−０系又はＣｕ
−Ｐｂ−０系の液相が生成し、この液相がセラミックス
を濡らすこ゛とによって良好な接合状態が得られるが、
前記液相が生成する温度範囲が従来のＣｕ系材料として
純Ｃｕを使用した場合（１０６５〜１０ｇ５℃でＣｕ−
０系の液相が生成）にくらべて非常に広くなる。That is, in the present invention, Cu containing Fa or Pb
By placing a 4-city alloy member in contact with a ceramic base material and heating it in the presence of oxygen, Cu-Fe-0 or Cu is added to the interface between the Cu alloy member and the ceramic.
- A Pb-0 system liquid phase is generated and a good bonding state is obtained by wetting the ceramics with this liquid phase.
The temperature range in which the liquid phase is generated is when pure Cu is used as the conventional Cu-based material (Cu-
0 system liquid phase is formed).
本発明における接合温度即ち酸素の存在下での加熱温度
は、Ｆｅを含有するＣｕ合金製部材おいては１０１５−
１０８３℃、Ｐｂを含有するＣｕ合金製部材においては
８１２〜１０８３℃にする必要があるが、これは夫々の
下限未満の温度では銅系部材とセラミックスとの界面に
Ｃｕ −Ｆｅ −０系又はＯｕ −ｐｂ−ｏ系の液相が
生成せず、又１０８５℃を超えると包合金製部材自体が
溶融してしまうためである。The bonding temperature in the present invention, that is, the heating temperature in the presence of oxygen is 1015-
For Cu alloy members containing Pb, the temperature needs to be 812 to 1083°C, but this means that at temperatures below the respective lower limits, Cu-Fe-0 or Ou This is because a -pb-o liquid phase is not generated, and if the temperature exceeds 1085°C, the encapsulated alloy member itself will melt.
又本発明において、Ｆｅ又はｐｂの含有量を夫々０゜１
〜１０％の範囲内に限定したのは、０．１％未満では前
記液相が生成する温度範囲が純銅の場合にくらべてほと
んど広くならず、又１０％を超えると材料の加工が困難
となり、また導電性が劣るためである。In addition, in the present invention, the content of Fe or PB is set to 0°1, respectively.
The reason why it is limited to a range of ~10% is that if it is less than 0.1%, the temperature range in which the liquid phase is generated will hardly be wider than in the case of pure copper, and if it exceeds 10%, it will be difficult to process the material. This is also because the conductivity is poor.
本発明におけるＦｅ又はＰｂを含むＣｕ系部材を酸素の
存在下で加熱する方法としては、例えば該部材を窒素、
アルゴン等の不活性ガス中に酸素を微量含有する酸化性
ガス雰囲気中で加熱する方法、或いは該部材をあらかじ
め酸化させてその表面に２００〜５０００オングストロ
一ム程度の厚さの酸化物層を形成させた後、不活性ガス
雰囲気中で加熱する方法等をとることが出来る。而して
前記酸化性ガス雰囲気中で加熱する方法においては、不
活性ガス中の酸素量はα０５〜α２ｖ０１％の範囲内に
する必要があるが、これは酸素量が０．０５％未満では
Ｃｕ−Ｆｅ−０系又はＣｕ −Ｐｂ −０系の液相が充
分に生成しなくて接合が起らなく、又０．２％を超える
とＣｕ系部材表面の酸化が著しく、該Ｃｕ系部材の半田
付は性等が低下するためである。In the present invention, a method of heating a Cu-based member containing Fe or Pb in the presence of oxygen includes, for example, heating the member with nitrogen,
A method of heating in an oxidizing gas atmosphere containing a small amount of oxygen in an inert gas such as argon, or oxidizing the member in advance to form an oxide layer with a thickness of about 200 to 5000 angstroms on the surface. After that, a method of heating in an inert gas atmosphere can be used. In the method of heating in an oxidizing gas atmosphere, the amount of oxygen in the inert gas must be within the range of α05 to α2v01%, but this means that if the oxygen amount is less than 0.05%, Cu -Fe-0 system or Cu-Pb-0 system liquid phase is not sufficiently generated and bonding does not occur, and if it exceeds 0.2%, oxidation of the surface of the Cu-based member is significant, and the surface of the Cu-based member is This is because soldering deteriorates the properties.
伺本発明に用いるセラミックスとしては、Ａｌｔｏｓ、
ＢｅＯ等の酸化物系セラミックスや、Ｓｉｓ Ｎ４ 、
Ｓｉｎ。Ceramics used in the present invention include Altos,
Oxide ceramics such as BeO, Sis N4,
Sin.
Ａ！Ｎ等の非酸化物系セラミックスを用いることが出来
る。A! Non-oxide ceramics such as N can be used.
更に本発明においては、基本的には加圧は必要でないが
、必要に応じて０１〜ＩＫｇ／−程度の加圧を行なって
も差貝支えなく、この場合には更に高い接着強度を得る
ことが出来る。Furthermore, in the present invention, pressure is basically not required, but if necessary, pressure of about 01 to IKg/- can be applied without any difference in strength, and in this case, even higher adhesive strength can be obtained. I can do it.
〔実施例１〕 以下に実施例により本発明を更に具体的に説明する。[Example 1] The present invention will be explained in more detail below with reference to Examples.
厚さ１００μｍのＣｕ箔及びＦｅ又はＰｂを含有するＣ
ｕ合金箔を厚さ０６５５閣のＡｉ高基体上に乗せ、酸素
をα０５〜０．１ ｖｏ１％含む窒素ガス中で、８２０
〜１０７０℃の温度範囲内で１０分間加熱して、前記Ｃ
ｕ又はＣｕ合金箔をＡ１山基体に接合した。Cu foil with a thickness of 100 μm and C containing Fe or Pb
A U alloy foil was placed on an Ai high substrate with a thickness of 0655 mm, and heated at 820 mm in nitrogen gas containing oxygen at α05 ~ 0.1 vol%.
Heating for 10 minutes within the temperature range of ~1070°C
U or Cu alloy foil was bonded to the A1 base.
而して得られた接合体について接合強度を測定した。銅
箔の材質、窒素ガス中の酸素濃度、加熱温度等の試験条
件並びに得られた接合体の接合強度（ＫＬｉ／ｃｒｎ）
を第１表にまとめて示す。The bonding strength of the thus obtained bonded body was measured. Test conditions such as copper foil material, oxygen concentration in nitrogen gas, heating temperature, and bonding strength of the resulting bonded body (KLi/crn)
are summarized in Table 1.
第１表から明らかな様に、Ｃｕ系部材中のＦｅ、Ｐｂ量
が本発明の組成範囲内である本発明例随１．２のＣｕ
−Ｆｅ合金及びＮ１３のＣｕ −Ｐｂ合金は、夫々１０
７０〜１０２０℃、１０７０℃〜、ｇ２０℃の温度範囲
内において良好な接合強度が得られている。As is clear from Table 1, the amount of Fe and Pb in the Cu-based member is within the composition range of the present invention.
-Fe alloy and N13 Cu-Pb alloy each have 10
Good bonding strength was obtained within the temperature ranges of 70 to 1020°C, 1070°C to g20°C.
一方Ｆｅ又はｐｂ量が本発明の組成範囲よりも少ない比
較例Ｎα４．５のＣｕ−Ｆｅ合金、Ｃｕ−Ｐｂ合金及び
従来例Ｎｉｌ ６のＣｕは１０７０℃に加熱した場合に
は良好な接合強度が得られるが、１０６０℃以下の温度
に加熱した場合は接合が起らない。On the other hand, the Cu-Fe alloy of Comparative Example Nα4.5, Cu-Pb alloy, and the Cu of Conventional Example Nil 6, in which the amount of Fe or Pb is smaller than the composition range of the present invention, have good bonding strength when heated to 1070°C. However, when heated to a temperature of 1060° C. or lower, no bonding occurs.
〔実施例２〕
厚さ１００μｍのＣｕ−２％Ｆｅ合金箔をあらかじめ大
気中で加熱して１０００オングストロームの厚さの酸化
物層を形成させた後、これを該酸化物層を介して厚さＯ
，Ｇ ５５ ｒｒｍのＭ、○導体上に乗せ、窒素ガス中
で１０５０℃で１０分間加熱したところ、７．５に９／
αの良好な接着強度を有する接合体が得られた。[Example 2] A Cu-2% Fe alloy foil with a thickness of 100 μm was heated in advance in the air to form an oxide layer with a thickness of 1000 angstroms. O
, G 55 rrm M, ○ When placed on a conductor and heated in nitrogen gas at 1050°C for 10 minutes, the result was 7.5 to 9/
A bonded body having a good adhesive strength of α was obtained.
厚さ１００μｍのＣｕ−２％Ｆｅ合金箔を厚さα６５５
１１１ＩＯ隔０３基体上に乗せ、α３Ｋｆ１／嘉彎加圧
した状態で、酸素を０１％含む窒素ガス中で１０５０℃
で１０分間加熱したところ、９３に９／ｃｒｎの良好な
接着強度を有する接合体が得られた。100μm thick Cu-2%Fe alloy foil with thickness α655
Placed on a 111IO 03 substrate and pressurized to α3Kf1/Kaikai, heated at 1050°C in nitrogen gas containing 01% oxygen.
When heated for 10 minutes, a bonded body having a good adhesive strength of 93 to 9/crn was obtained.
本発明によれば、銅系部材をセラミックス基体へ直接接
合する際の温度範囲がかなり広くて、温度コントロール
が従来にくらべて非常に容易であり、しかも得られる接
合体の接合強度も良好である等工業上顕著な効果を奏す
るものである。According to the present invention, the temperature range when directly bonding a copper-based member to a ceramic substrate is considerably wide, temperature control is much easier than in the past, and the bonding strength of the resulting bonded body is also good. It has remarkable industrial effects.
Claims (3)
接合するにあたり、該Ｃｕ系部材としてＦｅ又はＰｂを
０．１〜１０％含有するＣｕ合金製部材を用い、セラミ
ックス基体と接触させて配置し、加熱することを特徴と
するＣｕ系部材をセラミックス基体に直接接合する方法
。(1) When directly joining a Cu-based member to a ceramic substrate by heating, a Cu alloy member containing 0.1 to 10% of Fe or Pb is used as the Cu-based member and placed in contact with the ceramic substrate, A method for directly bonding a Cu-based member to a ceramic substrate, which involves heating.
配置し、酸化性ガス雰囲気中で加熱することを特徴とす
る特許請求の範囲第１項記載のＣｕ系部材をセラミック
ス基体に直接接合する方法。(2) A method for directly joining a Cu-based member to a ceramic substrate according to claim 1, which comprises placing the Cu-alloy member in contact with the ceramic substrate and heating it in an oxidizing gas atmosphere. .
ックス基体と接触させて配置し、不活性ガス雰囲気中で
加熱することを特徴とする特許請求の範囲第１項記載の
Ｃｕ系部材をセラミックス基体に直接接合する方法。(3) The Cu-based member according to claim 1 is placed in contact with a ceramic substrate after being oxidized in advance, and heated in an inert gas atmosphere. Method of joining directly to.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61235294A JPS6389477A (en) | 1986-10-02 | 1986-10-02 | Method of directly joining cu base member to ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61235294A JPS6389477A (en) | 1986-10-02 | 1986-10-02 | Method of directly joining cu base member to ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6389477A true JPS6389477A (en) | 1988-04-20 |
Family
ID=16983982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61235294A Pending JPS6389477A (en) | 1986-10-02 | 1986-10-02 | Method of directly joining cu base member to ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6389477A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5583317A (en) * | 1994-01-14 | 1996-12-10 | Brush Wellman Inc. | Multilayer laminate heat sink assembly |
| US5777259A (en) * | 1994-01-14 | 1998-07-07 | Brush Wellman Inc. | Heat exchanger assembly and method for making the same |
| US6022426A (en) * | 1995-05-31 | 2000-02-08 | Brush Wellman Inc. | Multilayer laminate process |
-
1986
- 1986-10-02 JP JP61235294A patent/JPS6389477A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5583317A (en) * | 1994-01-14 | 1996-12-10 | Brush Wellman Inc. | Multilayer laminate heat sink assembly |
| US5686190A (en) * | 1994-01-14 | 1997-11-11 | Brush Wellman Inc. | Multilayer laminate product and process |
| US5777259A (en) * | 1994-01-14 | 1998-07-07 | Brush Wellman Inc. | Heat exchanger assembly and method for making the same |
| US6022426A (en) * | 1995-05-31 | 2000-02-08 | Brush Wellman Inc. | Multilayer laminate process |
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