JP2730794B2 - Conductor paste for aluminum nitride substrate - Google Patents
Conductor paste for aluminum nitride substrateInfo
- Publication number
- JP2730794B2 JP2730794B2 JP2244096A JP24409690A JP2730794B2 JP 2730794 B2 JP2730794 B2 JP 2730794B2 JP 2244096 A JP2244096 A JP 2244096A JP 24409690 A JP24409690 A JP 24409690A JP 2730794 B2 JP2730794 B2 JP 2730794B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum nitride
- nitride substrate
- powder
- conductor paste
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 title claims description 19
- 239000004020 conductor Substances 0.000 title claims description 18
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 16
- 239000000843 powder Substances 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 13
- 238000002425 crystallisation Methods 0.000 claims description 10
- 230000008025 crystallization Effects 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000032683 aging Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052809 inorganic oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000005065 mining Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910007472 ZnO—B2O3—SiO2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Non-Adjustable Resistors (AREA)
- Non-Insulated Conductors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、窒化アルミニウム焼結体基板用導体ペース
ト、特に該基板の電極や導電回路パターンを形成するた
めの導体ペーストに関する。Description: TECHNICAL FIELD The present invention relates to a conductor paste for a substrate of an aluminum nitride sintered body, and particularly to a conductor paste for forming an electrode and a conductive circuit pattern on the substrate.
窒化アルミ焼結体は、電気絶縁性に優れ、特に非常に
高い熱伝導率を持つ材料として、例えばレーザ素子やマ
イクロ波送信機用などのハイパワーハイブリッドICや、
高集積密度のLSIの基板への応用が有望視されている。Aluminum nitride sintered body is a material with excellent electrical insulation properties, especially as a material with very high thermal conductivity, such as high power hybrid ICs for laser devices and microwave transmitters,
The application of LSIs with high integration density to substrates is promising.
セラミックス焼結体を上記の用途に供する場合、基板
表面には導体パターンによる回路の形成が不可欠であ
る。導体回路を形成する方法は種々知られているが、従
来のアルミナを主成分とするセラミックス基板において
は、厚膜メタライズ法、すなわち導体ペーストを用いた
導体層形成方法が最も広く採用されている。When a ceramic sintered body is used for the above applications, it is essential to form a circuit by a conductor pattern on the substrate surface. Although various methods for forming a conductor circuit are known, a thick film metallization method, that is, a method for forming a conductor layer using a conductor paste, is most widely adopted for a conventional ceramic substrate containing alumina as a main component.
しかし、アルミナと同様の厚膜メタライズ法を窒化ア
ルミニウム基板に対して適用しようとすると、導体ペー
ストに含まれるフリット成分が窒化アルミニウムを分解
してしまう結果として導体−基板間に強い接合層が形成
できず、接着強度は著しく低いものしか得られず、高い
接着強度を得るためには、フリットと窒化アルミニウム
の反応を極力抑えることが必要である。However, when a thick film metallization method similar to alumina is applied to an aluminum nitride substrate, a strong bonding layer can be formed between the conductor and the substrate as a result of the frit component contained in the conductive paste decomposing the aluminum nitride. However, only an extremely low bond strength is obtained, and in order to obtain a high bond strength, it is necessary to minimize the reaction between the frit and the aluminum nitride.
従来、この反応を防ぐため、表面に酸化アルミニウム
の皮膜を形成しておく方法（特開昭64−24083号公報、
特開昭63−248785号公報、特開昭62−182182号公報、特
開昭59−121175号公報）や、フリットを使用しない方法
（荘司他、マイクロ接合研究委員会資料、MJ−108−8
9、平成元年２月７日）などが試みられているが、前者
は酸化アルミニウムの膜厚の管理が困難であり工程が複
雑となるうえ、強度も十分には得られず、また、後者は
はんだ付けエージング後の強度の低下が著しく、実用と
するには十分なものではなかった。Conventionally, in order to prevent this reaction, a method of forming a film of aluminum oxide on the surface (JP-A-64-24083,
JP-A-63-248785, JP-A-62-182182, JP-A-59-121175) and a method using no frit (Shoji et al., Micro Joining Research Committee Data, MJ-108-8)
9, February 7, 1989), but in the former, it is difficult to control the thickness of the aluminum oxide, which complicates the process and does not provide sufficient strength. However, the strength after soldering aging was remarkably reduced, and was not sufficient for practical use.
本発明は上記従来技術の問題点を克服し、窒化アルミ
ニウム基板への接着強度が大きい導体層を形成すること
ができる窒化アルミニウム基板用導体ペーストを提供す
ることにある。An object of the present invention is to provide a conductor paste for an aluminum nitride substrate which can overcome the problems of the above-mentioned prior art and can form a conductor layer having high adhesive strength to an aluminum nitride substrate.
本発明者らは上記課題を解決すべく鋭意研究を重ねた
結果、金属粉末100重量部に対し、軟化温度が650℃以上
かつ結晶化温度が800℃以下のAl2O3−CaO−SiO2系結晶
化ガラスフリットを１〜20重量部含有することを特徴と
する窒化アルミニウム基板用導体ペーストを用いること
によって、窒化アルミニウム基板への接着強度が大きい
導体層を形成することができることを見いだし、本発明
に到達した。The present inventors have conducted intensive studies to solve the above problems, and found that Al 2 O 3 —CaO—SiO 2 having a softening temperature of 650 ° C. or more and a crystallization temperature of 800 ° C. or less with respect to 100 parts by weight of metal powder. It has been found that by using a conductor paste for an aluminum nitride substrate, which contains 1 to 20 parts by weight of a system-crystallized glass frit, a conductor layer having a high adhesive strength to an aluminum nitride substrate can be formed. The invention has been reached.
本発明に用いる金属粉末は、銀粉、パラジウム粉、銀
・パラジウム合金粉、銅粉、金粉など、導体ペースト用
原料粉末として一般に用いられるものが利用できる。As the metal powder used in the present invention, silver powder, palladium powder, silver / palladium alloy powder, copper powder, gold powder and the like generally used as raw material powder for conductor paste can be used.
軟化温度が650℃以上かつ結晶化温度が800℃以下のAl
2O3−CaO−SiO2系結晶化ガラスフリットとしては、例え
ばSiO225〜30重量％、Al2O37〜15重量％、CaO15〜24重
量％、TiO28〜15重量％、ZnO20〜30重量％、B2O30〜５
重量％の割合で含有するものが挙げられる。Al with a softening temperature of 650 ° C or higher and a crystallization temperature of 800 ° C or lower
The 2 O 3 -CaO-SiO 2 based crystallized glass frit, for example, SiO 2 25 to 30 wt%, Al 2 O 3 7~15 wt%, CaO15～24 wt%, TiO 2 8 to 15 wt%, ZnO20 30 wt%, B 2 O 3 0~5
What is contained in the ratio of the weight% is mentioned.
Al2O3−CaO−SiO2系のガラスは、加熱によって容易に
結晶化させることができる。また、この成分系のガラス
は、溶融状態でAlNとよく濡れなじむが、反応はしにく
く、焼成中にガスが発生して欠陥を形成することも少な
い。Al 2 O 3 -CaO-SiO 2 system glass may be easily crystallized by heating. Further, the glass of this component system is well wetted with AlN in a molten state, but hardly reacts, and is less likely to generate a gas during firing to form a defect.
結晶化ガラスフリットの軟化温度は、650℃未満であ
ると焼成の初期段階で溶融してしまうため、フリットと
窒化アルミニウム基板の間で僅かではあるが反応が起
り、結果として不十分な接着強度しか得られない。一
方、結晶化温度が800℃を越えるガラスフリットを用い
ると、焼成中にガラスの結晶化が十分進まずエージング
後の強度低下が著しい。If the softening temperature of the crystallized glass frit is lower than 650 ° C, it will melt in the initial stage of firing, so a small but reactive reaction will occur between the frit and the aluminum nitride substrate, resulting in insufficient bonding strength. I can't get it. On the other hand, when a glass frit having a crystallization temperature exceeding 800 ° C. is used, the crystallization of the glass does not proceed sufficiently during firing, and the strength after aging is remarkably reduced.
本発明は、結晶化ガラスとしてAl2O3−CaO−SiO2系ガ
ラスを用い、かつ、軟化温度及び結晶化温度を上記の如
く限定したことにより目的が達成できるものである。The present invention can achieve the object by using an Al 2 O 3 —CaO—SiO 2 system glass as the crystallized glass and limiting the softening temperature and the crystallization temperature as described above.
結晶化ガラスフリットの金属粉末100重量部に対する
含有量は１〜20重量部とする。１重量部未満では接着強
度が十分に得られず、20重量部を越えるはんだ濡れ性が
悪化する。The content of the crystallized glass frit relative to 100 parts by weight of the metal powder is 1 to 20 parts by weight. If the amount is less than 1 part by weight, sufficient adhesive strength cannot be obtained, and the solder wettability exceeding 20 parts by weight deteriorates.
本発明のペーストにおいて、金属粉末並びにフリット
粉末の他にはんだ濡れ性や接着強度をさらに向上させる
目的で、Bi2O3、CdO、Sb2O3、Sb2O5、V2O3、V2O5、Cr2O
3等の無機酸化物をさらに配合しても差し支えない。こ
れら無機酸化物の添加量には特に制限はないが、好適に
は金属粉末100重量部に対して20重量部以下である。In the paste of the present invention, for the purpose of further improving the wettability and bonding strength solder other metal powders and frit powder, Bi 2 O 3, CdO, Sb 2 O 3, Sb 2 O 5, V 2 O 3, V 2 O 5 , Cr 2 O
An inorganic oxide such as 3 may be further added. The amount of the inorganic oxide is not particularly limited, but is preferably 20 parts by weight or less based on 100 parts by weight of the metal powder.
第１表に示す配合にしたがって、各種金属粉末その他
の添加物を、有機ビヒクルと共に三本ロール機にて混練
・分散を行ってペーストを得た。According to the composition shown in Table 1, various metal powders and other additives were kneaded and dispersed together with an organic vehicle using a three-roll machine to obtain a paste.
ただし、銀粉としては同和ケミカル性の平均粒径1.3
μｍのもの、パラジウム粉としては同和鉱業製の平均粒
径0.1μｍのもの、白金粉としては同和鉱業製の平均粒
径0.1μｍのもの、銅粉としては小坂製錬製の平均粒径
１μｍのもの、無機酸化物粉としては特級試薬のそのま
ま用いた。また表に示されたフリットのうちＯ粉,M粉,N
粉はすべてAl2O3−CaO−SiO2系の結晶化ガラスであり、
Ｏ粉は軟化点730℃・結晶化温度（ピーク値）780℃、Ｍ
粉は軟化点760℃・結晶化温度（ピーク値）848℃、Ｎ粉
は軟化点745℃・結晶化温度（ピーク値）800℃のもの
で、Ｚ粉はZnO−B2O3−SiO2系の結晶化ガラスで軟化点7
20℃・結晶化温度（ピーク値）810℃のものである。However, the average particle size of the silver powder is 1.3.
μm, palladium powder with an average particle size of 0.1 μm manufactured by Dowa Mining, platinum powder with an average particle size of 0.1 μm manufactured by Dowa Mining, and copper powder with an average particle size of 1 μm manufactured by Kosaka Smelting Co., Ltd. As the inorganic oxide powder, a special grade reagent was used as it was. O powder, M powder, N
All powders are Al 2 O 3 -CaO-SiO 2 crystallized glass,
O powder has softening point of 730 ℃, crystallization temperature (peak value) 780 ℃, M
Flour softening point 760 ° C. · crystallization temperature (peak value) 848 ° C., N powder softening point 745 ° C. · crystallization temperature (peak value) intended 800 ° C., Z powder ZnO-B 2 O 3 -SiO 2 Softening point 7 with crystallized glass
It has a crystallization temperature (peak value) of 810 ° C at 20 ° C.
このペーストを川崎製鉄製窒化アルミニウム基板上に
印刷し、貴金属ペーストの場合は空気中ピーク温度850
℃、ピーク保持時間10分、In−Out40分でベルト炉で焼
成した。銅ペーストの場合には窒素中ピーク温度900
℃、ピーク保持時間10分、In−Out60分でベルト炉で焼
成した。ベルト炉は光洋リンドバーグ社製パイロットII
型ベルト炉を用いた。This paste is printed on Kawasaki Steel's aluminum nitride substrate.
C., baked in a belt furnace at a peak retention time of 10 minutes and In-Out of 40 minutes. Peak temperature in nitrogen 900 for copper paste
Firing was performed in a belt furnace at a temperature of 10 ° C, a peak holding time of 10 minutes, and an In-Out time of 60 minutes. Belt furnace is Koyo Lindberg Pilot II
A mold belt furnace was used.
基板上には2mm×2mmパッドを10個形成し、焼成終了後
6/4はんだ浴中に基板を５秒間浸漬し、はんだ濡れを確
認し、それぞれのパッド上に直径0.65mmの錫被覆導線を
はんだ付けし90度ピール試験を行い、初期値、並びに48
時間150℃エージングの接着強度を測定した。これらの
結果を第２表に示した。After forming 10 2mm x 2mm pads on the substrate,
The board was immersed in a 6/4 solder bath for 5 seconds to confirm solder wetting, soldered a tin-coated conductor of 0.65 mm diameter on each pad, and performed a 90 degree peel test.
The adhesive strength after aging at 150 ° C. was measured. Table 2 shows the results.
これらの結果からわかるように、本発明のペーストか
ら作られた導体の接着強度は、48時間 エージング後でもいずれも2.5kg/2mm□以上であり、実
用的であることがわかる。As can be seen from these results, the adhesive strength of the conductor made from the paste of the present invention was 48 hours. Even after aging, the weight was 2.5 kg / 2 mm square or more, which proved to be practical.
本発明による窒化アルミニウム基板用導体ペースト
を、窒化アルミニウム基板の表面に例えば印刷によって
塗布し焼成することにより、窒化アルミニウム基板への
接着強度が大きい導体層を形成することができ、その工
業的利用価値は大である。The conductor paste for an aluminum nitride substrate according to the present invention is applied to the surface of the aluminum nitride substrate by, for example, printing and sintering, whereby a conductor layer having a high adhesive strength to the aluminum nitride substrate can be formed. Is great.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 佐伯 周二 滋賀県大津市陽明町８―７ (72)発明者 岡田 駿 神奈川県逗子市沼間５丁目765―120 (56)参考文献 特開 昭59−164684（ＪＰ，Ａ) 特開 平３−193686（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Shuji Saeki 8-7, Yomeicho, Otsu City, Shiga Prefecture (72) Inventor Shun Okada 5-765-120, Numa, Zushi City, Kanagawa Prefecture (56) References JP-A Sho 59- 164684 (JP, A) JP-A-3-193686 (JP, A)
Claims (1)
℃以上かつ結晶化温度が800℃以下のAl2O3−CaO−SiO2
系結晶化ガラスフリットを１〜20重量部含有することを
特徴とする窒化アルミニウム基板用導体ペースト。1. A softening temperature of 650 with respect to 100 parts by weight of metal powder.
Al 2 O 3 -CaO-SiO 2 whose crystallization temperature is 800 ° C or lower
A conductor paste for an aluminum nitride substrate, comprising 1 to 20 parts by weight of a system crystallized glass frit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2244096A JP2730794B2 (en) | 1990-09-17 | 1990-09-17 | Conductor paste for aluminum nitride substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2244096A JP2730794B2 (en) | 1990-09-17 | 1990-09-17 | Conductor paste for aluminum nitride substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04124077A JPH04124077A (en) | 1992-04-24 |
| JP2730794B2 true JP2730794B2 (en) | 1998-03-25 |
Family
ID=17113693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2244096A Expired - Fee Related JP2730794B2 (en) | 1990-09-17 | 1990-09-17 | Conductor paste for aluminum nitride substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2730794B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0664991A (en) * | 1992-08-21 | 1994-03-08 | Kyocera Corp | Method for cladding aluminum nitride-based sintered compact with metallic layer |
| JP3209089B2 (en) * | 1996-05-09 | 2001-09-17 | 昭栄化学工業株式会社 | Conductive paste |
| JP5662361B2 (en) * | 2012-02-09 | 2015-01-28 | 京都エレックス株式会社 | Resistor paste for ceramic substrate heater and ceramic substrate heater |
-
1990
- 1990-09-17 JP JP2244096A patent/JP2730794B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04124077A (en) | 1992-04-24 |
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