JP2813447B2 - Conductor paste for aluminum nitride sintered substrate - Google Patents
Conductor paste for aluminum nitride sintered substrateInfo
- Publication number
- JP2813447B2 JP2813447B2 JP2260073A JP26007390A JP2813447B2 JP 2813447 B2 JP2813447 B2 JP 2813447B2 JP 2260073 A JP2260073 A JP 2260073A JP 26007390 A JP26007390 A JP 26007390A JP 2813447 B2 JP2813447 B2 JP 2813447B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- weight
- aluminum nitride
- parts
- nitride sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Conductive Materials (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、窒化アルミニウム焼結基板用導体ペースト
に係るものであり、詳しくは該基板の表面に電極や導体
回路パターンなどの導体層を形成するための導体ペース
トに関する。Description: TECHNICAL FIELD The present invention relates to a conductor paste for an aluminum nitride sintered substrate, and more specifically, to form a conductor layer such as an electrode or a conductor circuit pattern on the surface of the substrate. To a conductive paste.
窒化アルミニウム焼結体は、電気的絶縁性および熱伝
導性が共に良好であり、例えば、LSIの基板などの高密
度実装回路基板や高出力の半導体搭載用の基板などへの
応用が有望視されている。Aluminum nitride sintered body has good electrical insulation and thermal conductivity, and is expected to be applied to, for example, high-density mounting circuit boards such as LSI boards and boards for mounting high-power semiconductors. ing.
ところで、セラミック基板を回路基板として使用する
場合、表面に導電層を形成することが不可欠であり、従
来よりアルミナ基板などでは導体ペーストを用いた導電
層形成が広く行われている。By the way, when a ceramic substrate is used as a circuit board, it is essential to form a conductive layer on the surface, and a conductive layer using a conductive paste has been widely used for alumina substrates and the like.
しかし、窒化アルミニウム焼結体の表面は金属に対す
る漏れ性が悪いので、従来の導体ペーストを窒化アルミ
ニウム焼結体の表面に強固に接着するのは困難であっ
た。However, since the surface of the aluminum nitride sintered body has poor leaking property to metal, it has been difficult to firmly bond the conventional conductor paste to the surface of the aluminum nitride sintered body.
本発明は従来の技術の有するこのような問題点に鑑み
てなされたものであって、その目的は、窒化アルミニウ
ム焼結基板への接着性が良好な窒化アルミニウム焼結基
板用導体ペーストを提供することにある。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems of the related art, and an object of the present invention is to provide a conductor paste for an aluminum nitride sintered substrate having good adhesion to the aluminum nitride sintered substrate. It is in.
上記目的を達成するために本発明の要旨は、銀粉、パ
ラジウム粉、銀−パラジウム合金粉、銅粉及び金粉から
なる群より選ばれた少なくとも１種以上の金属粉末100
重量部に対して、軟化点が500℃以上のB2O3−ZnO−SiO2
を必須成分とする結晶化ガラスを５〜30重量部および１
重量部以上のBi2O3と１重量部以上のCaOもしくはCa（O
H）２もしくはAl2O3もしくはAl（OH）３を合計で最大15
重量部添加してなる窒化アルミニウム焼結基板用導体ペ
ーストにある。In order to achieve the above object, the gist of the present invention is to provide at least one metal powder 100 selected from the group consisting of silver powder, palladium powder, silver-palladium alloy powder, copper powder and gold powder.
B 2 O 3 -ZnO-SiO 2 having a softening point of 500 ° C or more based on parts by weight
5 to 30 parts by weight of crystallized glass containing
Parts by weight of Bi 2 O 3 and 1 part by weight of CaO or Ca (O
H) 2 or Al 2 O 3 or Al (OH) 3 up to 15 in total
It is a conductor paste for aluminum nitride sintered substrates obtained by adding parts by weight.
金属粉末としては、銀粉、ラジウム粉、銀−パラジウ
ム合金粉、銅粉、金粉など、導体ペースト用原料粉とし
て一般に用いられているものを好適に使用できる。As the metal powder, a silver powder, a radium powder, a silver-palladium alloy powder, a copper powder, a gold powder and the like generally used as a raw material powder for a conductor paste can be suitably used.
B2O3−ZnO−SiO2を必須成分とする結晶化ガラスは、
窒化アルミニウム焼結基板との接着性が良好で導体上の
ブリスター現象も見られないが、係る結晶化ガラスでも
軟化点が500℃以下であれば、導体の半田濡れが悪くな
り、一方、軟化点が500℃以上でも非晶質ガラスでは接
着強度が充分でない。Crystallized glass containing B 2 O 3 -ZnO-SiO 2 as an essential component,
Good adhesion to the aluminum nitride sintered substrate and no blister phenomenon on the conductor is observed, but even with such crystallized glass, if the softening point is 500 ° C or lower, the solder wetting of the conductor becomes worse, while the softening point However, even at a temperature of 500 ° C. or higher, the bonding strength is not sufficient with amorphous glass.
また、金属粉末100重量部に体するこの結晶化ガラス
の添加量が５重量部未満では、基板との接着強度が充分
でなく、30重量部超になると酸化ビスマスなどのフラッ
クスを添加しても半田濡れ性は充分ではない。Further, if the amount of the crystallized glass incorporated into 100 parts by weight of the metal powder is less than 5 parts by weight, the adhesive strength with the substrate is not sufficient, and if it exceeds 30 parts by weight, a flux such as bismuth oxide may be added. Solder wettability is not sufficient.
そこで、軟化点が500℃以上でB2O3−ZnO−SiO2を必須
成分とする結晶化ガラスを金属粉末100重量部に対して
５〜30重量部添加することにより、基板との接着強度が
高くて半田濡れ性が良好な導体を得ることができる。Therefore, by adding 5 to 30 parts by weight of crystallized glass having a softening point of 500 ° C. or more and B 2 O 3 —ZnO—SiO 2 as an essential component to 100 parts by weight of the metal powder, the adhesive strength with the substrate is increased. And a conductor having high solder wettability can be obtained.
さらに、金属粉末100重量部に対してBi2O3とCaOもし
くはCa（OH）２もしくはAl2O3もしくはAl（OH）３を合
計で最大15重量部添加するのが好ましく、Bi2O3を１重
量部以上添加することにより、B2O3−ZnO−SiO2系結晶
化ガラスのみでは必ずしも充分ではない導体の半田濡れ
性を完全なものとすることができる。また、CaOもしく
はCa（OH）２もしくはAl2O3もしくはAl（OH）３を１重
量部以上添加することにより、ガラスの滲み出しを防止
することができる。Further, it is preferable to add up to 15 parts by weight of Bi 2 O 3 and CaO or Ca (OH) 2 or Al 2 O 3 or Al (OH) 3 in total relative to the metal powder 100 parts by weight, Bi 2 O 3 Is added in an amount of 1 part by weight or more, the solder wettability of the conductor, which is not always sufficient only with the B 2 O 3 —ZnO—SiO 2 -based crystallized glass, can be completed. Furthermore, the CaO or Ca (OH) 2 or Al 2 O 3 or Al (OH) 3 by adding 1 part by weight or more, it is possible to prevent bleed through of the glass.
以下に実施例を挙げて本発明を説明するが、本発明は
これら実施例により何等限定されるものではない。Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited to these examples.
８頁の表１に示す配合の金属粉末、ガラス粉および無
機添加物を有機ビヒクルと混練し、３本ロール機でこれ
らの物質を均一に分散してペーストを得た。そして、こ
のペーストを川崎製鉄（株）製の窒化アルミニウム焼結
基板上に適当なパターンで印刷し、所定条件で乾燥させ
た。その後、このペーストを窒素雰囲気のベルト炉に装
入して、貴金属ペーストの場合は、ピーク温度900℃、
ピーク保持時間10分、昇温−降温のサイクル時間60分で
焼成を行った。また、銅ペーストの場合、ピーク温度を
600℃とした以外は同上条件で焼成を行った。なお、ベ
ルト炉は光洋リンドバーグ社製のパイロットII型ベルト
炉を用いた。The metal powder, glass powder and inorganic additive having the composition shown in Table 1 on page 8 were kneaded with an organic vehicle, and these substances were uniformly dispersed with a three-roll machine to obtain a paste. Then, this paste was printed on an aluminum nitride sintered substrate manufactured by Kawasaki Steel Corporation in an appropriate pattern and dried under predetermined conditions. After that, this paste was charged into a belt furnace in a nitrogen atmosphere, and in the case of a noble metal paste, the peak temperature was 900 ° C,
The calcination was performed with a peak retention time of 10 minutes and a cycle time of temperature rise / fall 60 minutes. In the case of copper paste, the peak temperature
The firing was performed under the same conditions as above except that the temperature was changed to 600 ° C. The belt furnace used was a pilot II type belt furnace manufactured by Koyo Lindberg.
そして、このようにして得た導体について、以下のよ
うな方法で、半田濡れ性、初期接着強度およびエージン
グ後の接着強度を測定した。この測定結果を表１に示
す。The conductor thus obtained was measured for solder wettability, initial adhesive strength and adhesive strength after aging by the following methods. Table 1 shows the measurement results.
上記のようにして窒化アルミニウム焼結基板上に2mm
×2mmの導体パッドを10個焼成したものにフラックスを
つけて230℃の半田浴（60％Sn/40％Pb）に５秒間浸漬し
て引き上げたときの半田濡れ面積の平均値を測定し、90
％以上を良好、90％未満を不良とした。2mm on aluminum nitride sintered substrate as above
The average value of the solder wetting area was measured when a flux was applied to the fired 10 conductor pads of × 2 mm, immersed in a 230 ° C solder bath (60% Sn / 40% Pb) for 5 seconds, and lifted up. 90
% Or more was regarded as good, and less than 90% was regarded as bad.
半田濡れ性の評価を行った基板の導体パッド上に直径
0.65mmの錫メッキ銅線を半田付けし、90゜ピール試験を
行い、基板から導体パッドが剥離するときの強度を測定
した。表１にはこれらの平均値を示す。The solder wettability was evaluated on the conductor pad of the board.
A 0.65 mm tin-plated copper wire was soldered, and a 90 ° peel test was performed to measure the strength at which the conductive pad was peeled off from the substrate. Table 1 shows these average values.
初期接着強度を測定する場合と同じようにして、導体
パッド上に錫メッキ銅線を半田付けした基板を150時間
で48時間時効した後に、同上方法で接着強度を測定し
た。表１にはその平均値を示す。In the same manner as in the measurement of the initial adhesive strength, the substrate in which the tin-plated copper wire was soldered on the conductor pad was aged for 150 hours for 48 hours, and then the adhesive strength was measured by the same method. Table 1 shows the average values.
表１より以下の点が明らかである。 The following points are clear from Table 1.
本実施例に係る導体はすべて半田濡れ性が良好であ
り、エージング後の接着強度も2.0kg/2mm□以上であ
り、極めて実用性能に優れている。All of the conductors according to this example have good solder wettability, and the adhesive strength after aging is 2.0 kg / 2 mm □ or more, which is extremely excellent in practical performance.
比較例１に係る導体は軟化点が415℃の結晶化ガラ
ス粉末を添加したものであるから、半田濡れ性が悪い。Since the conductor according to Comparative Example 1 was added with crystallized glass powder having a softening point of 415 ° C., the solder wettability was poor.
比較例２に係る導体は軟化点が690℃の非晶質ガラ
ス粉末を添加したものであるから、接着強度が充分でな
い。Since the conductor according to Comparative Example 2 was obtained by adding an amorphous glass powder having a softening point of 690 ° C., the bonding strength was not sufficient.
比較例３に係る導体は軟化点が620℃のB2O3−ZnO−
SiO2系の結晶化ガラス粉末を添加したものであるが、そ
の添加量が４重量部と少ないので、接着強度が充分でな
い。The conductor according to Comparative Example 3 has a softening point of B 2 O 3 -ZnO-
Although SiO 2 -based crystallized glass powder is added, the addition amount is as small as 4 parts by weight, so that the adhesive strength is not sufficient.
比較例４に係る導体は軟化点が580℃のB2O3−ZnO−
SiO2系の結晶化ガラス粉末を添加したものであるが、そ
の添加量が35重量部と多いので、半田濡れ性が悪い。The conductor according to Comparative Example 4 has a softening point of B 2 O 3 -ZnO-
Although SiO 2 -based crystallized glass powder is added, the addition amount is as large as 35 parts by weight, so that solder wettability is poor.
比較例５に係る導体にはBi2O3が添加されていない
ので、半田濡れ性が不良である。Since Bi 2 O 3 was not added to the conductor according to Comparative Example 5, the solder wettability was poor.
比較例６に係る導体にはCaOもしくはCa（OH）２も
しくはAl2O3もしくはAl（OH）３が添加されていないの
で、ガラスの滲み出しがあった。Since CaO or Ca (OH) 2 or Al 2 O 3 or Al (OH) 3 was not added to the conductor according to Comparative Example 6, the glass bleed out.
本発明に係る導体ペーストは、基板との接着強度が高
くて且つ半田濡れ性が良好であって、窒化アルミニウム
焼結基板導体ペーストとして極めて好適に用いることが
できる。INDUSTRIAL APPLICABILITY The conductive paste according to the present invention has high adhesive strength to a substrate and good solder wettability, and can be used very suitably as an aluminum nitride sintered substrate conductive paste.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 岡田 駿 神奈川県逗子市沼間５丁目765―120 (72)発明者 中野 正 千葉県千葉市川崎町１番地 川崎製鉄株 式会社技術研究本部内 (56)参考文献 特開 平４−31336（ＪＰ，Ａ) 特開 平２−312201（ＪＰ，Ａ) 特開 平２−39410（ＪＰ，Ａ) 特開 昭62−216301（ＪＰ，Ａ) 特開 昭61−210659（ＪＰ，Ａ) 特公 昭62−53032（ＪＰ，Ｂ２) 特公 昭62−1662（ＪＰ，Ｂ２) 特公 昭60−37562（ＪＰ，Ｂ２) 特公 昭58−20155（ＪＰ，Ｂ２) (58)調査した分野(Int.Cl.6，ＤＢ名) H01B 1/14 - 1/24 H05K 1/09 C09D 5/24 C04B 41/87──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Shun Okada 5-765-120 Numa, Zushi City, Kanagawa Prefecture (72) Inventor Tadashi Nakano 1 Kawasaki-cho, Chiba-shi, Chiba References JP-A-4-31336 (JP, A) JP-A-2-312201 (JP, A) JP-A-2-39410 (JP, A) JP-A-62-1216301 (JP, A) JP-A Sho 61-210659 (JP, A) Japanese Patent Publication 62-53032 (JP, B2) Japanese Patent Publication 62-1662 (JP, B2) Japanese Patent Publication 60-37562 (JP, B2) Japanese Patent Publication 58-20155 (JP, B2) B2) (58) Field surveyed (Int. Cl. 6 , DB name) H01B 1/14-1/24 H05K 1/09 C09D 5/24 C04B 41/87
Claims (1)
粉、銅粉及び金粉からなる群より選ばれた少なくとも１
種以上の金属粉末100重量部に対して、軟化点が500℃以
上のB2O3−ZnO−SiO2を必須成分とする結晶化ガラスを
５〜30重量部および１重量部以上のBi2O3と１重量部以
上のCaOもしくはCa（OH）２もしくはAl2O3もしくはAl
（OH）３を合計で最大15重量部添加してなる窒化アルミ
ニウム焼結基板用導体ペースト。At least one selected from the group consisting of silver powder, palladium powder, silver-palladium alloy powder, copper powder and gold powder.
The species or more metal powder 100 parts by weight, B softening point of more than 500 ℃ 2 O 3 5~30 parts by weight of crystallized glass the -ZnO-SiO 2 as an essential component and 1 part by weight or more of Bi 2 O 3 and at least 1 part by weight of CaO or Ca (OH) 2 or Al 2 O 3 or Al
(OH) 3 the total up to 15 parts by weight added to become sintered aluminum nitride substrate conductor paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2260073A JP2813447B2 (en) | 1990-09-27 | 1990-09-27 | Conductor paste for aluminum nitride sintered substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2260073A JP2813447B2 (en) | 1990-09-27 | 1990-09-27 | Conductor paste for aluminum nitride sintered substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04137310A JPH04137310A (en) | 1992-05-12 |
| JP2813447B2 true JP2813447B2 (en) | 1998-10-22 |
Family
ID=17342931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2260073A Expired - Fee Related JP2813447B2 (en) | 1990-09-27 | 1990-09-27 | Conductor paste for aluminum nitride sintered substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2813447B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100954722B1 (en) * | 2008-07-04 | 2010-04-23 | (주) 아모엘이디 | Electrode material of ??? substrate, method of formating electrode on ??? substrate and ??? substrate |
| CN102194537A (en) * | 2010-03-19 | 2011-09-21 | 第一毛织株式会社 | Paste for solar cell electrode and solar cell using the same |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4688379B2 (en) * | 2001-09-26 | 2011-05-25 | 福田金属箔粉工業株式会社 | Circuit board, manufacturing method thereof, and electronic apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6253032A (en) * | 1985-09-02 | 1987-03-07 | Nippon Telegr & Teleph Corp <Ntt> | Optical fiber two-way transmission system |
| JPH0431336A (en) * | 1990-05-25 | 1992-02-03 | Showa Denko Kk | Thick film conductor composition |
-
1990
- 1990-09-27 JP JP2260073A patent/JP2813447B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100954722B1 (en) * | 2008-07-04 | 2010-04-23 | (주) 아모엘이디 | Electrode material of ??? substrate, method of formating electrode on ??? substrate and ??? substrate |
| CN102194537A (en) * | 2010-03-19 | 2011-09-21 | 第一毛织株式会社 | Paste for solar cell electrode and solar cell using the same |
| CN102194537B (en) * | 2010-03-19 | 2013-05-01 | 第一毛织株式会社 | Paste for solar cell electrode and solar cell using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04137310A (en) | 1992-05-12 |
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