JPS6214824B2 - - Google Patents

Info

Publication number
JPS6214824B2
JPS6214824B2 JP12971779A JP12971779A JPS6214824B2 JP S6214824 B2 JPS6214824 B2 JP S6214824B2 JP 12971779 A JP12971779 A JP 12971779A JP 12971779 A JP12971779 A JP 12971779A JP S6214824 B2 JPS6214824 B2 JP S6214824B2
Authority
JP
Japan
Prior art keywords
pattern
mask
patterns
electron beam
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12971779A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5652754A (en
Inventor
Akira Saito
Yasunobu Ooshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP12971779A priority Critical patent/JPS5652754A/ja
Publication of JPS5652754A publication Critical patent/JPS5652754A/ja
Publication of JPS6214824B2 publication Critical patent/JPS6214824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP12971779A 1979-10-08 1979-10-08 Manufacture of mask for manufacturing semiconductor device Granted JPS5652754A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12971779A JPS5652754A (en) 1979-10-08 1979-10-08 Manufacture of mask for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12971779A JPS5652754A (en) 1979-10-08 1979-10-08 Manufacture of mask for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5652754A JPS5652754A (en) 1981-05-12
JPS6214824B2 true JPS6214824B2 (enExample) 1987-04-03

Family

ID=15016459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12971779A Granted JPS5652754A (en) 1979-10-08 1979-10-08 Manufacture of mask for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5652754A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5751000U (enExample) * 1980-09-04 1982-03-24

Also Published As

Publication number Publication date
JPS5652754A (en) 1981-05-12

Similar Documents

Publication Publication Date Title
JP2896347B2 (ja) フォトマスク
EP0369053B1 (de) Verfahren zur Herstellung von Masken mit Strukturen im Submikrometerbereich
JPH04274238A (ja) 位相シフトマスクの作製方法
JP3210143B2 (ja) Ｘ線マスク構造体とその作製方法、及び、該ｘ線マスク構造体を用いたｘ線露光方法と、該ｘ線マスク構造体を用いて作成するデバイス製造方法
US4349621A (en) Process for X-ray microlithography using thin film eutectic masks
CA2107795C (en) Processes for electron lithography
TWI232495B (en) Manufacturing method of transfer mask substrate and transfer mask
JPS6211068B2 (enExample)
JPS6214824B2 (enExample)
US5104481A (en) Method for fabricating laser generated I.C. masks
US6296991B1 (en) Bi-focus exposure process
US4612274A (en) Electron beam/optical hybrid lithographic resist process in acoustic wave devices
JPS61113062A (ja) フオトマスク
JP3274448B2 (ja) ステンシルマスクの製造方法
JPH03257825A (ja) 半導体装置の製造方法
JPS6155106B2 (enExample)
JP2892014B2 (ja) 光露光用マスク及び露光方法
JPS57198632A (en) Fine pattern formation
JPH04291345A (ja) パターン形成方法
US4368215A (en) High resolution masking process for minimizing scattering and lateral deflection in collimated ion beams
US20020119397A1 (en) Methods of forming patterns across photoresist and methods of forming radiation-patterning tools
GB1589286A (en) Alignment of a photo-mask with respect to the surface of a substrate body
JP2798944B2 (ja) 薄膜形成方法
JPS61222127A (ja) サブミクロンホトレジストパタ−ン形成方法
KR960002507A (ko) 마스크 및 그 제조방법