JPS62142791A - Vacuum treatment device - Google Patents

Abstract

PURPOSE:To prevent the contamination of a vacuum treatment chamber and to make efficient vacuum treatment of many kinds of substrates by providing a preliminary vacuum chamber for carrying in and out of the substrates and vacuum treatment chamber to the wall surface of a vacuum conveying chamber and providing a vacuum evacuation system and substrate conveying or moving mechanism to each of the respective chambers. CONSTITUTION:This vacuum treatment device consists of the preliminary vacuum chamber 2 which carrier the substrates into said chamber from atm. and ejects the substrates subjected to the vacuum treatment to the outside, the treatment chamber 1 provided with electrodes 16, 25 and the vacuum conveying chamber 52 provided with the substrate conveying mechanism 48. The vacuum evacuation systems are provided to the respective chambers of the above-mentioned device to prevent the contamination of the treatment chamber 1 from the atm. The chambers 1 and 2 are freely attachably and detachably provided into installation holes 6, 7 on the wall surface of the chamber 52 so as to easily deal with the change of the substrate treatment mode. The movement of the substrates 18a, 18b between the treatment chamber 1 and the preliminary vacuum chamber 2 as well as the positions in the route for conveying the substrates is efficiently executed by the substrate moving mechanism consisting of lifts 21, 37.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a vacuum processing apparatus for surface processing a substrate in vacuum.

(Prior Art) Surface treatment equipment using plasma is well known as this type of vacuum processing equipment, and dry etching equipment using compatible gas plasma is widely used, especially in the semiconductor flk N device manufacturing process. There is.

As these dry enching devices, those shown in FIGS. 3-1 to 5 are often used.

The apparatus shown in FIG. 3 is a hatch processing type apparatus in which the nitrogen treatment 1 is exposed to the atmosphere every time the substrate is attached or detached, and after being attached to the substrate 18, vacuum treatment is performed.

In the apparatus shown in FIG. 4, a pre-vacuum chamber 2a is provided in the processing chamber 1 via a valve 51b, and the substrates 18 are transferred one by one from the substrate holter 3 placed in the atmosphere by opening the valve 5 and the pre-vacuum chamber 2a. from the preliminary vacuum chamber 2a to the processing chamber 1 via the valve 51b.
After performing the intended substrate processing, the substrate is passed through a valve 51c and a pond vacuum pre-processing chamber 2b, and is then taken out into the atmosphere again by opening a valve 51d, which is a processing apparatus having a so-called vacuum-tight mechanism.

The apparatus shown in FIG. 5 introduces the substrate 18 together with the substrate holder 3 into a large-volume preliminary vacuum chamber 2a, and transfers the substrate to a substrate transfer chamber installed between the processing chamber 1 and the preliminary vacuum chamber 2a. After the substrate is transferred to the processing chamber 1 through the chamber 4 and processed in the processing chamber 1, it is transferred again through the substrate transfer chamber 4 to the large-volume reserve-C empty chamber 2b where another substrate holder 3 is prepared. This is a processing type device that collects substrates and then takes out the collected substrates into the atmosphere. In addition, in the figure, 51e to 51
i indicates a valve.

(Problems to be Solved by the Invention) However, in each of these types of apparatuses, in the apparatus shown in FIG. 1-120 and the like in the atmosphere are adsorbed on the inner wall of the processing chamber 1, and this adsorbed gas (particularly I4□O) is released in stage 1'jl, where the processing chamber 1 is held in vacuum again and the substrate is processed. There is a problem in that the reproducibility of etching performance is significantly impaired.

Next, in the apparatus shown in FIG. 4, since the substrate is moved into and out of the processing chamber 1 through the preliminary vacuum chambers 2a and 2b, the entry of the atmosphere into the processing chamber 1 is limited to the third vacuum chamber. This can be prevented considerably compared to the device shown in the figure. However, if a cycle of vacuum processing of the substrate in the processing chamber 1, removal of the processed substrate, and introduction of the unprocessed substrate is repeated for a short time, for example, within 2 to 3 minutes, the entrance of the substrate 18 is The processing chamber 1 is not sufficiently airtight due to the separate opening and exit, and as a result, as in the case of the apparatus shown in FIG. Etching properties (its) cannot be obtained.On the other hand, the fifth
Regarding the processing form shown in the figure, since a plurality of substrates are introduced into or recovered from the preliminary vacuum chambers 2a and 2b, the volume of the preliminary vacuum chambers 2a and 2b becomes large.
For this purpose, after entering and exiting the board (1;n vacuum chamber 2a and vacuum chamber 2)
When evacuating room b, the preliminary vacuum chambers 2a and 2b are
The amount of adsorbed gas released from the walls of the vacuum chamber increases significantly (the amount of gas released is proportional to the surface area inside the vacuum chamber and inversely proportional to the time it is open to the atmosphere). For this reason, in order to perform vacuum evacuation until the adverse effect of the amount of gas released is negligible, it is necessary to
It takes 0 to 30 minutes. Requiring evacuation for such a long time becomes a factor that inhibits the throughput of the vacuum processing apparatus.

In addition, in the vacuum processing apparatuses shown in FIGS. 3 to 5, if the processing mode of the substrate is changed, the structure of the 114 components such as parts in the processing chamber 1 and the structure of the own wood in the processing chamber 1 must be changed. There will be times when this is unavoidable.

In such a case, especially as shown in FIGS. 4 and 5, preliminary vacuum chambers 2a and 2b and a vacuum transfer chamber 4 are specially installed adjacent to the processing chamber 1, and the substrate is not supported in vacuum. If the transfer mechanism (not shown) is distributed in each chamber, complicated and troublesome adjustment work is required when changing the transport mechanism or processing chamber 1. From the viewpoint of avoiding such adjustment work. In general, vacuum processing equipment tends to be specialized for each purpose, and this has been a major obstacle to multipurpose use.

The present invention has been made in order to solve the above-mentioned conventional problems, and its purpose is to reliably prevent contamination of the processing chamber due to air intrusion, to have excellent vacuum evacuation processing ability, and to It is an object of the present invention to provide a vacuum processing apparatus that can be used for multiple purposes and can easily cope with changes in processing modes.

(Means for Solving the Problems) In order to achieve the above object, the present invention provides the following tel!
has been completed. That is, the present invention includes a pre-ωn vacuum chamber, a vacuum transfer 1, and a barrel burying chamber, each having a vacuum evacuation system, and inserts substrates one by one from the atmosphere into the pre-vacuum chamber, and transfers the substrates to the vacuum transfer chamber. After the substrate is vacuum-processed in the processing chamber, the substrate is returned to the pre-vacuum chamber via the vacuum transfer chamber, and the substrate is transferred from the pre-vacuum chamber to the pre-vacuum chamber. In a vacuum processing apparatus that takes out a substance into the atmosphere, the preliminary vacuum chamber and the processing chamber are removably provided in a pair of installation holes formed in the wall surface of the vacuum transfer chamber, and the holes are airtight from the atmosphere side. a separate container portion for covering, and a container portion provided so as to be movable forward and backward in a state facing the container portion from the indoor side of the vacuum transfer chamber;
It is composed of separate substrate mounting parts that isolate the container part from the vacuum transfer chamber by advancing and moving to form an airtight chamber space, and the substrate mounting parts include substrates to be placed. This is a vacuum processing apparatus equipped with a substrate moving mechanism that moves the substrate to a transport path position.

(Function) In the present invention having the above configuration, during vacuum processing of a substrate, the movement of the substrate into and out of the preliminary vacuum chamber, the vacuum transfer chamber, and the processing chamber and the transfer operation are performed as follows. First, for example, the substrate mounting parts of the processing chamber and the pre-vacuum chamber are brought into the advanced movement state to airtightly isolate the pre-vacuum chamber, the vacuum transfer chamber, and the processing chamber, and the vacuum evacuation system is operated to separate the vacuum transfer chamber and the processing chamber. evacuate.

At the same time, the container section of the preliminary vacuum chamber is removed, the substrate is placed on the substrate mounting section, and the substrate is airtightly attached to the container section removed from the chamber, thereby introducing the substrate from the outside into the preliminary vacuum chamber. is completed. Next, the vacuum evacuation system is operated to evacuate the preliminary vacuum chamber, and when this preliminary vacuum chamber and the vacuum transfer chamber and processing chamber, which have already been evacuated, reach the predetermined vacuum state, the preliminary vacuum Each board in the chamber and processing chamber: ll
! Move the storage section backwards. This backward movement releases the isolation state between the vacuum transfer chamber, the preliminary vacuum chamber, and the processing chamber. Next, operate the substrate lift and substrate transport mechanism,
First, the substrate placed on the substrate rest for the preliminary vacuum chamber is moved to the transport path position by a substrate lift, and then this substrate is moved by the substrate transport mechanism to a position directly above the substrate rest for the processing chamber, for example. Transport to. Then, at the end of this substrate transfer, the substrate lift is operated to place the substrate on the substrate platform of the processing chamber. Next, by moving each substrate platform forward, the preliminary vacuum chamber, the vacuum transfer chamber, and the processing chamber are once again airtightly isolated, and the vacuum processing of the substrate is performed within the vacuum processing chamber. At the same time, the next substrate is introduced into the pre-vacuum chamber by the same operation as described above, and the pre-vacuum chamber is evacuated. Next, when the vacuum processing of the substrate in the processing chamber is completed 17, the substrate mounting section of the processing chamber is moved backward, and the substrate lift is further operated to move the vacuum processed substrate to the transport path position.

On the other hand, the JS plate mounting part of the preliminary vacuum chamber is also moved backward after evacuation of the preliminary vacuum chamber, and the substrate in the preliminary vacuum chamber is moved to the transfer path position by the operation of substrate lift 1~. In this state, the substrate transfer mechanism performs a transfer operation to exchange the positions of the vacuum-treated substrate and the unprocessed substrate.Next, the substrate lift is operated to place each substrate on the corresponding substrate. As a result, an unprocessed substrate is placed on the substrate placement section for the processing chamber, and a vacuum-processed substrate is placed on the substrate placement section for the preliminary vacuum chamber.

Next, by moving each board mounting section forward,
ii The vacuum chamber, the vacuum transfer chamber, and the processing chamber are again hermetically isolated, and the unprocessed substrate is vacuum-processed in the processing chamber.
On the other hand, in the preliminary vacuum chamber, vacuum-processed substrates are removed and unprocessed substrates are introduced from the outside by removing the container section.

Then, the removed container section is reattached, and the exhaust system is operated to evacuate the preliminary vacuum chamber. In this way, by repeating the series of steps 1.1n from introducing the substrate into the preliminary vacuum chamber to taking out the vacuum-treated substrate, vacuum processing of the substrates is accomplished one after another.

(Example) Hereinafter, one example of the present invention will be described based on the drawings. FIG. 1 shows a cross-sectional configuration of an embodiment of the present invention, in which a pair of installation holes 6 and 7 are bored in the top wall 5 of the vacuum transfer chamber 52 at arbitrary distances apart. A processing container 8 as a container portion is provided on the outside of the top wall 5 so as to cover the installation hole 6. is stored in a removable manner. A sealing member 9 is interposed between the abutting surfaces of the processing container 8 and the top wall 5 to maintain airtightness between the inside of the processing container 8 and the outside (atmosphere).

On the other hand, a processing substrate mounting section 10 is provided on the lower surface side of the installation hole 6 so as to face the processing container 8 .

The processing substrate mounting section 10 includes a flat airtight plate 11, a cylindrical wall 12 that stands up from the upper surface of the airtight plate 11 and is inserted into the installation hole 6, and a pipe vertically installed from the lower surface of the airtight plate 11. It consists of a drive shaft 15 having a shape.

This drive shaft 15 is connected to the insertion hole 1 in the bottom wall 13 of the vacuum transfer chamber 52.
4 is hermetically inserted through a sealing member 42 and protrudes downwardly and outwardly. Inside the cylindrical wall 12, a first electric filter 16 is fitted into the center hole of the processing substrate mounting section 10 and placed upright on the airtight plate 11. A four part 17 is formed on the upper surface of the first electrode 16, and a substrate 18a is placed on the upper surface of the first electrode 16 so as to cover the recessed part.

Further, a push-up plate 19 is housed in the fourth part 17,
A push-up rod 20 projects outward from the center of the push-up plate 19 through the center hole of the first electrode 16 .

The push-up plate 19 and the push-up bar 20 constitute a processed substrate lift 21. The lower part of the push-up rod 20 is connected to a vertical drive mechanism (not shown),
By operating this vertical drive mechanism, the substrate 18a can be pushed upward.

Further, the drive shaft 15 of the processing substrate platform 10 is also connected horizontally to a vertical drive a (not shown), and by operating this vertical drive mechanism, for example, the processing substrate platform 10 is moved upward. As shown in FIG.
A space serving as the processing chamber 1 is formed between the processing chamber 8 and the processing chamber 8.

In this case, a seal member 22 is provided on the upper surface of the outer periphery of the airtight plate 11.
The sealing member 22 achieves airtight pressure contact between the inner surface (lower surface) of the top wall 5 and the airtight plate 11 . In addition, in order to achieve airtight isolation between the vacuum transfer chamber 52 and the processing chamber 1, the airtight plate 11, the 16 first electrodes, and the first electrode f! Seal portions tt23 are interposed between the center hole wall of f116 and the push-up rod 20, respectively. The first electrode 16 is connected to a high frequency power source 24.

On the other hand, a second electrode 25 is disposed on the processing chamber 8 side facing the substrate 18a, and a DC voltage is applied to the second senior minister 25 from a power source (not shown). The reason for providing the second electrode 25 to which a DC voltage is applied is to control the energy of ions incident on the substrate 18a. A gas introduction system 26 is connected to this second electrode 25, and the introduced gas is transferred to the second double positive electrode 2.
The liquid is ejected from a plurality of holes provided in 5 toward the substrate 18a.

Furthermore, the processing container 8 includes an exhaust boat 27 and a HARTS 28.
A first exhaust system 31 composed of two vacuum pumps and a vacuum gauge 30 is connected to the first exhaust system 31 . The vacuum pump 29 of the first exhaust system 31 may be, for example, an oil rotary pump, a mechanical roots blower pump, an oil diffusion pump, a turbomolecular pump, a cryopump, or a combination thereof. Several pumps are used. In addition, if necessary, this first exhaust system 31
As a component, a variable conductance may be provided between the processing chamber 1 and the vacuum pump 29 to control the pressure within the processing chamber 1 at a constant level, and traps for removing harmful residue components may be provided before and after the two vacuum pumps. It's okay.

On the other hand, a preliminary vacuum container 32 that covers the installation hole 7 is airtightly and removably attached to the upper surface of the installation hole 7 via a seal member 33. In addition, on the lower surface side of the installation hole 7, a preliminary vacuum substrate mounting section 34, which is substantially similar to the processing substrate mounting section 10, is arranged to move up and down (advance and retreat) in conjunction with a lower drive unit t1-1 (not shown). ) are freely provided. Then, the preliminary vacuum substrate placement parts 3 and 4 move upward, and the airtight plate 35 of the preliminary vacuum substrate placement part 34 and the lower surface of the top wall 5 are connected to the sealing member 22a.
By contacting them airtightly, a space serving as the preliminary vacuum chamber 2 is formed between the preliminary vacuum substrate mounting section 34 and the preliminary vacuum container 32.

A substrate mounting surface is formed on the upper surface of the cylindrical wall 36 of the preliminary vacuum substrate mounting section 34, and a substrate 18b introduced from the outside is mounted on this substrate mounting surface. Further, inside the cylindrical wall 36, a preliminary vacuum substrate lift 3 similar to the processing substrate lift 1-21 is provided.
7 is provided so as to be movable up and down. In order to ensure airtightness between the preliminary vacuum chamber 2 and the outside (atmosphere), the drive shaft 38 of the preliminary vacuum substrate mounting section 34 and the preliminary vacuum substrate lift 37 are connected to each other.
A sealing member 40 is interposed between the push-up rod 39 and the
Further, in order to ensure airtightness between the vacuum transfer chamber 52 and the outside air, a seal member 42 is interposed between the insertion hole 41 provided in the bottom wall 13 of the vacuum transfer chamber 52 and the drive shaft 38. Further, the vacuum transfer chamber 52 and the preliminary vacuum chamber 2 include valves 43 and 44, a vacuum pump 45, an exhaust boat 53,
A second exhaust system 47 consisting of a vacuum gauge 46 is connected, and by controlling the opening and closing of the valves 43 and 44, the vacuum transfer chamber 52 and the pre-vacuum chamber 2 can be evacuated individually or simultaneously. The vacuum pump 45 may be an oil diffusion pump with a high evacuation speed, in order to quickly evacuate the preliminary vacuum chamber 2.
Cryopumps, turbo molecular pumps, etc. are used.

In addition, a preliminary vacuum substrate (placement section 34
and with the processed substrate platform 10 moved downward,
A substrate transport mechanism 4 that transports the substrate 18b from a position directly above the preliminary vacuum substrate platform 34 to a position directly above the processed substrate platform 10.
The substrate transport machine tfI48 provided with the 8 is IRrted by known means such as a transport belt, a linear moving fork, and a rotating arm. Further, the vacuum transfer chamber 52 is provided with a relay stage 50 that functions as a relay place for substrate transfer.

Incidentally, a substrate holder 3 capable of accommodating a plurality of substrates 18 is provided at a position near the outside of the vacuum transfer chamber 52 and is movable downward, and a substrate transfer mechanism 49 is provided near the substrate boulder 3. It is being

This substrate transfer machine fi'a 49 has the same structure as the substrate transfer mechanism 48 provided in the vacuum transfer chamber 52. This substrate transport mechanism 49 takes out the substrate 18 from the substrate holder 3 with the preliminary vacuum container 32 removed, and
This collected group [18] is pre-loaded onto the O1i vacuum substrate mounting section 34.
It will be placed on

The apparatus of this embodiment is configured as described above, and the following is explained below.
The operation will be explained based on FIGS. 1 and 2. In the state shown in FIG. 1, the processing substrate a placement section 10 and the preliminary vacuum substrate placement section 34 are in the upward movement (advance movement) position, and the processing chamber 1, preliminary vacuum chamber 2, and substrate transfer chamber 4 are each airtight. They are in a state of isolation. Due to the exhaust operations of the first exhaust system 31 and the second exhaust system 47, the processing chamber 1, preliminary vacuum chamber 2, and substrate transfer chamber 4 are in a high vacuum state.

Under such a high vacuum environment, the substrate 1 is
The dry etching process shown in 8a is performed. That is,
A gas mainly composed of halogenated carbon is introduced into the processing chamber 1 via a gas introduction system 26. On the other hand, high frequency power is applied to the first electrode 16, and high frequency power is applied to the second electrode 2.
A DC voltage is applied to 5. As a result, the introduced gas enters the glass state, and atoms and molecules in the activated excited state apply to the substrate 18a, and due to well-known behavior,
] Vacuum processing such as tri-etching processing is performed.

After the vacuum processing of the substrate 18a in the processing chamber 1 is completed in this way, the processing substrate platform 10 is moved downward (backward movement).
will be held. Then, as shown in FIG. 2, the processed substrate lift 21 is moved upward, and the vacuum-processed substrate 18a is pushed up to the substrate transport path position H. On the other hand, Yo (Iiii
When the vacuum chamber 2 reaches a predetermined vacuum pressure, the preliminary vacuum substrate lift 34 is moved downward and the preliminary vacuum substrate lift 37 is moved upward, and the substrate 18b is also moved to the substrate transport path position 1.
It is pushed up to 1. In this state, )1(
One transport movement of the temporary transport mechanism 118 is performed, and the substrates 18a and 18b are first transported to the relay stage 50. Then, the relay stage 50 or 15 substrate 18a is transported to the preliminary vacuum substrate lift 37, and the substrate 18b is transported to the processing substrate lift 21. In other words, the substrate 18a
Then, the board 18b is replaced with the board 18b. This board exchange! After a, the processing groups (anti-lifts 1 to 21 and preliminary vacuum substrate lift 37 are moved downward, and the substrate 18a is pref+in
5 on the vacuum substrate mounting section 34! The substrate 18b is placed on the first electrode 16. Next, the processing substrate mounting section 10 and the preliminary vacuum substrate mounting section 34 are moved upward, and as shown in FIG. In the process chamber 1, the substrate 18b is subjected to vacuum processing, while in the pre-vacuum chamber 2, the pre-vacuum container 32 is removed, and the pre-vacuum substrate lift 37 is moved up and down. The substrate transfer machine 1II49 is withdrawn, and the vacuum-treated substrate 18a is carried out and the next substrate 18 is carried in from the substrate holder 3. After this unprocessed substrate 18 is placed on the preliminary vacuum substrate mounting section 34, the pref1M vacuum chamber 32 is reinstalled, and the evacuation of the flifi vacuum chamber 2 is preliminarily performed by the evacuation operation of the second evacuation system 47. Exhaust is performed. In this way, by repeating a series of processes from introducing the unprocessed substrate 18 into the preliminary vacuum chamber 2 to taking out the vacuum-treated substrate, vacuum processing of a plurality of substrates is automatically performed in sequence.

In this case, the vacuum pressures in the processing chamber 1 and the vacuum transfer chamber 52 are constantly detected by the vacuum gauges 30 and 46, and whenever the vacuum pressure decreases, the first exhaust system 31
Then, the second exhaust system 47 is operated to perform exhaust operation to maintain the vacuum pressure at the optimum pressure at all times.

As described above, according to this embodiment, when a substrate is taken into or out of the preliminary vacuum chamber 2, the preliminary vacuum chamber 2, the vacuum transfer chamber 4, and the processing chamber 1 are completely isolated, and the Since the entrance and exit of the substrate to and from the preliminary vacuum chamber 2 is limited to one place, the processing chamber 1 and the vacuum transfer chamber 52 will not be contaminated by air intrusion due to the entry and exit of the substrate to the outside. Since the volume of the chamber 2 is sufficient to accommodate one substrate, it can be made into a very small space. Therefore, it is possible to shorten the evacuation time of the preliminary vacuum chamber 2, improve the working efficiency of substrate processing, and this is advantageous in mass production of semiconductor substrates.

Further, the substrate transport mechanism 48 that transports the substrate between the preliminary vacuum chamber 2 and the processing chamber 1 is not distributed among the preliminary vacuum chamber 2 and the processing chamber 1, but is arranged all at once in the vacuum transfer chamber 52. This has the advantage of greatly simplifying the overall equipment configuration and freeing the conventional complicated and troublesome work of having to mutually adjust the substrate transport mechanisms distributed in each room. . Furthermore, processing chamber 1
Since the processing container 8 is configured to be detachable,
When changing the mode of vacuum processing of substrates, it is convenient to install the corresponding processing container 8. Therefore, it is possible to change the equipment according to the change of the mode of substrate processing without requiring the complicated and troublesome 11-day work of the conventional example. In this case, when the processing chamber 1 is evacuated, the processing container 8 is held against the surface due to the pressure difference between the inside of the processing chamber 1 and the atmosphere. It becomes possible to simplify the mechanical configuration of the mounting machine FM.

Changes to the processing chamber 1, maintenance and inspection of the processing chamber 1, etc. are carried out in advance (ift vacuum chamber 2 and vacuum transfer chamber 52).
This has the advantage of reducing the amount of time it takes to restore the entire device to a vacuum state where it can be operated after the changes and inspections (after the work is completed).

Note that in the above embodiment, high frequency power is applied to the first electrode 16 and DC voltage is applied to the second electrode 25, but this is reversed and a DC voltage is applied to the first electrode 16, Second
High frequency power may be applied to the electrodes.

(Effects of the Invention) Since the present invention has the configuration and operation as described above, the processing chamber and the substrate imaging chamber are not contaminated by atmospheric intrusion due to the entry and exit of substrates in the preliminary vacuum chamber. Therefore, extremely high-quality substrate vacuum processing with good reproducibility can be achieved.
Since the volume of the chamber is small and there is only one point where the substrate enters and exits from the outside, it is possible to shorten the evacuation time of the pref11N vacuum chamber and prevent a drop in the vacuum pressure of the processing chamber. This makes it possible to improve the work efficiency of substrate processing.Furthermore, it becomes possible to change the processing chamber extremely easily by replacing the processing container in the processing chamber. The device of the invention can be effectively utilized for multiple purposes.

[BRIEF DESCRIPTION OF THE DRAWINGS] Fig. 1 is a sectional view showing the structure of an embodiment according to the present invention, Fig. 2 is a sectional view showing the operation of this embodiment, and Figs. 3 to 5 are sectional views of the conventional example. It is a device configuration diagram. . 1... Processing room, 2.2a, 2b...
Preparatory vacuum chamber, 3... Substrate boulder, 4...
...Substrate transfer chamber, 5...Top wall, 6.7...
...Installation hole, 8...Processing container, 9...
... Seal member, 10 ... Processed substrate mounting section, 11 ... Airtight plate, 12 ...
・Cylinder wall, 13... Bottom wall, 14... Insertion hole, 15... Drive shaft, 16...
First electrode, 17... recess, 18.18a,
18b... Board, 1... Push-up plate, 20... Push-up bar, 21...
・・Processing substrate lift, 22.22a, 23・・・・
・Sealing member, 24...High frequency power supply, 25
...Second electrode, 26...Gas introduction system, 27...Exhaust port, 28...
...Valve, 29...Vacuum pump, 3'0...
...Vacuum gauge, 31...First exhaust system, 32...Prefiiii vacuum vessel, 33...
... Seal member, 34 ... Preliminary vacuum substrate mounting part, 35 ... Airtight plate, 36 ... Cylinder wall,
37... Preliminary vacuum board lift, 38...
...Drive shaft, 39...Pushing rod, 40...
... Seal member, 41 ... Insertion hole, 42
... Seal member, 43.44 ... Valve, 45 ... Vacuum pump, 46 ...
・Vacuum gauge, 47...Second exhaust system, 48
．． 49...Substrate transport mechanism, 50...
Relay stage, 51a to 51i... Valve, 52... Vacuum transfer chamber, 53... Exhaust port.

Claims (2)

[Claims] (1) Equipped with a preliminary vacuum chamber, a vacuum transfer chamber, and a processing chamber each having an evacuation system, and inserting substrates from the atmosphere one by one into the preliminary vacuum chamber, and transferring the substrates via the vacuum transfer chamber. After the substrate is vacuum-processed in the processing chamber, the substrate is returned to the preliminary vacuum chamber via the vacuum transfer chamber, and the substrate is exposed to the atmosphere from the preliminary vacuum chamber. In the vacuum processing apparatus to be taken out, the preliminary vacuum chamber and the processing chamber are removably provided in a pair of installation holes formed in the wall surface of the vacuum transfer chamber, and each of the preliminary vacuum chamber and the processing chamber is provided with a separate hole that airtightly covers the hole from the atmosphere side. a container section, and separate chambers which are provided so as to be movable forward and backward from the indoor side of the vacuum transfer chamber so as to face the container section, and whose advance movement isolates the container section from the vacuum transfer chamber to form an airtight chamber space. The substrate mounting section is provided with a substrate moving mechanism for moving the substrate to be placed on the transfer path position, and the moving mechanism moves the substrate into the vacuum transfer chamber. A vacuum processing apparatus comprising a substrate transport mechanism that transports a substrate moved to a transport path position to a predetermined position. (2) The vacuum processing apparatus according to claim (1), wherein an electrode to which direct current or alternating current power is applied is provided on the substrate platform forming the processing chamber.