JPS6345467B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a vacuum processing apparatus for surface processing a substrate in vacuum.

(Prior Art) Surface treatment apparatuses using plasma are well known as vacuum processing apparatuses of this type, and dry etching apparatuses using compatible gas plasma are widely used, particularly in semiconductor device manufacturing processes.

As these dry etching apparatuses, those shown in FIGS. 3 to 5 are often used.

The apparatus shown in FIG.
This is a batch processing type device in which the substrate 18 is exposed to the atmosphere each time, and after being attached to the substrate 18, vacuum processing is performed.

The apparatus shown in FIG. 4 has a valve 51b in the processing chamber 1.
A preliminary vacuum chamber 2a is provided through the substrate holder 3 placed in the atmosphere, and the substrates 18 are guided one by one into the preliminary vacuum chamber 2a by opening the valve 51a, and further from the preliminary vacuum chamber 2a through the valve 51b. After the substrate is transported to the processing chamber 1 and subjected to the desired processing in this processing chamber 1, it is further passed through a valve 51c and another vacuum preliminary chamber 2b, and then taken out into the atmosphere again by opening the valve 51d, so that it is so-called vacuum-tight. It is a processing device with a mechanism.

The apparatus shown in FIG. 5 introduces the substrate 18 together with the substrate holder 3 into a large-volume preliminary vacuum chamber 2a, and transfers the substrate to a substrate transfer chamber installed between the processing chamber 1 and the preliminary vacuum chamber 2a. After the substrate is transferred to the processing chamber 1 through the chamber 4 and processed in the processing chamber 1, the substrate is transferred again through the substrate transfer chamber 4 to the large-volume preliminary vacuum chamber 2b in which another substrate holder 3 is prepared. This is a processing type device that collects substrates and then takes out the collected substrates into the atmosphere. In addition, in the figure, 51e to 51i indicate valves.

(Problems to be Solved by the Invention) However, in each of these types of apparatuses, in the apparatus shown in FIG. H ₂ O, etc. in the atmosphere is adsorbed on the inner wall of the processing chamber 1, and when the processing chamber 1 is kept in a vacuum again and substrate processing is performed, this adsorbed gas (particularly H ₂ O) is released, which impairs etching performance. There is a problem in that reproducibility is significantly impaired.

Next, in the apparatus shown in FIG. 4, since the substrate is moved into and out of the processing chamber 1 through the preliminary vacuum chambers 2a and 2b, the entry of the atmosphere into the processing chamber 1 is limited to the third vacuum chamber. This can be prevented considerably compared to the device shown in the figure. However, when carrying out a repeated cycle of vacuum processing the substrate in the processing chamber 1, taking out the processed substrate, and introducing the unprocessed substrate for a short time, for example, within 2 to 3 minutes, the inlet and outlet of the substrate 18 may be separated. As a result, the airtightness of the processing chamber 1 is not sufficient due to the fact that the processing chamber 1 is provided with I can't get it. On the other hand, in the processing mode shown in FIG. 5, since a plurality of substrates are introduced into or recovered from the preliminary vacuum chambers 2a and 2b, the volumes within the preliminary vacuum chambers 2a and 2b become large. When the preliminary vacuum chambers 2a and 2b are evacuated after the substrates are taken in and out, the amount of adsorbed gas released from the walls of the preliminary vacuum chambers 2a and 2b increases significantly (the amount of gas released is proportional to the surface area inside the vacuum chamber, (inversely proportional to the exposure time). Therefore, it takes 20 to 30 minutes after the start of evacuation to perform evacuation until the adverse effect of the amount of gas released is negligible. Requiring evacuation for such a long time becomes a factor that inhibits the throughput of the vacuum processing apparatus.

In addition, in the vacuum processing apparatuses shown in FIGS. 3 to 5, when changing the processing mode of the substrate, it is necessary to change the components such as parts in the processing chamber 1 or the structure of the processing chamber 1 itself. occurs.

In such a case, especially as shown in FIGS. 4 and 5, preliminary vacuum chambers 2a and 2b and a vacuum transfer chamber 4 are specially installed adjacent to the processing chamber 1, and a substrate transfer mechanism in vacuum is provided. (not shown) are dispersed in each chamber, multiple and troublesome adjustment operations must be performed when changing the transport mechanism or the processing chamber 1. In order to avoid such adjustment work, vacuum processing equipment generally tends to be of a dedicated type for each application, and this has been a major obstacle to multipurpose usage.

The present invention has been made in order to solve the above-mentioned conventional problems, and its purpose is to reliably prevent contamination of the processing chamber due to air intrusion, to have excellent vacuum evacuation processing ability, and to It is an object of the present invention to provide a vacuum processing apparatus that can be used for multiple purposes and can easily cope with changes in processing modes.

(Means for Solving the Problems) In order to achieve the above object, the present invention is configured as follows. That is, the present invention includes a preliminary vacuum chamber, a vacuum transfer chamber, and a processing chamber, each having an evacuation system, and inserts substrates from the atmosphere one by one into the preliminary vacuum chamber, and transfers the substrates to the vacuum transfer chamber. After the substrate is vacuum-processed in the processing chamber, the substrate is returned to the pre-vacuum chamber via the vacuum transfer chamber, and the substrate is exposed to the atmosphere from the pre-vacuum chamber. In the vacuum processing apparatus, the preliminary vacuum chamber and the processing chamber are removably provided in a pair of installation holes formed in the wall surface of the vacuum transfer chamber, and each hole is airtightly covered from the atmosphere side. A separate container part is provided facing the container part from the indoor side of the vacuum transfer chamber so as to be movable forward and backward, and by moving forward, the container part is isolated from the vacuum transfer chamber to form an airtight chamber space. This is a vacuum processing apparatus in which the substrate mounting part is provided with a substrate moving mechanism for moving the mounted substrate to a transport path position.

(Function) In the present invention having the above configuration, during vacuum processing of a substrate, the movement of the substrate into and out of the preliminary vacuum chamber, the vacuum transfer chamber, and the processing chamber and the transfer operation are performed as follows. First, for example, the substrate mounting parts of the processing chamber and the pre-vacuum chamber are brought into the advanced movement state to airtightly isolate the pre-vacuum chamber, the vacuum transfer chamber, and the processing chamber, and the vacuum evacuation system is operated to separate the vacuum transfer chamber and the processing chamber. evacuate.

At the same time, the container section of the preliminary vacuum chamber is removed, the substrate is placed on the substrate mounting section, and the removed container section is airtightly mounted. In this way, the introduction of the substrate from the outside into the preliminary vacuum chamber is completed. Next, the vacuum evacuation system is operated to evacuate the preliminary vacuum chamber, and when this preliminary vacuum chamber and the vacuum transfer chamber and processing chamber, which have already been evacuated, reach the predetermined vacuum state, the preliminary vacuum The chamber and each substrate platform in the processing chamber are moved backward. This backward movement releases the separation between the vacuum transfer chamber, the preliminary vacuum chamber, and the processing chamber. Next, the substrate lift and substrate transfer mechanism are operated, and the substrate placed on the substrate platform for the preliminary vacuum chamber is first moved to the transfer path position by the substrate lift, and then this substrate is transferred. A mechanism transports it to a position directly above a substrate platform for a processing chamber, for example. Then, at the end of this substrate transfer, the substrate lift is operated to place the substrate on the substrate platform of the processing chamber. Next, by moving each substrate platform forward, the preliminary vacuum chamber, the vacuum transfer chamber, and the processing chamber are once again airtightly isolated, and the vacuum processing of the substrate is performed within the vacuum processing chamber. At the same time, the next substrate is introduced into the pre-vacuum chamber by the same operation as described above, and the pre-vacuum chamber is evacuated. Next, when the vacuum processing of the substrate in the processing chamber is completed, the substrate mounting section of the processing chamber is moved backward, and the substrate lift is further operated to move the vacuum processed substrate to the transport path position.

On the other hand, the substrate mounting portion of the preliminary vacuum chamber is also moved backward after the preliminary vacuum chamber is evacuated, and the substrate in the preliminary vacuum chamber is moved to the transport path position by the operation of the substrate lift. In this state, the substrate transport mechanism performs a transport operation, and the positions of the vacuum-treated substrate and the unprocessed substrate are exchanged. Next, the substrate lift is operated to place each substrate on the corresponding substrate platform. As a result, an unprocessed substrate is placed on the substrate placement section for the processing chamber, and a vacuum-processed substrate is placed on the substrate placement section for the preliminary vacuum chamber.

Next, by advancing and moving each substrate platform, the preliminary vacuum chamber, vacuum transfer chamber, and processing chamber are again airtightly isolated, and vacuum processing of unprocessed substrates is performed in the processing chamber, while the preliminary In the vacuum chamber, by removing the container part, the vacuum-treated substrate is taken out and the unprocessed substrate is introduced from the outside.

Then, the removed container section is reattached, and the evacuation system is operated to evacuate the preliminary vacuum chamber. In this way, by repeating a series of steps from introducing the substrate into the preliminary vacuum chamber to taking out the vacuum-treated substrate, vacuum processing of the substrates is accomplished one after another.

(Example) Hereinafter, an example of the present invention will be described based on the drawings. FIG. 1 shows a cross-sectional configuration of an embodiment of the present invention, in which a pair of installation holes 6 and 7 are bored in the top wall 5 of the vacuum transfer chamber 52 at arbitrary distances apart. A processing container 8 serving as a container section is detachably attached to the outside of the top wall 5 so as to cover the installation hole 6. This processing container 8
A sealing member 9 is interposed between the abutting surfaces of the top wall 5 and the top wall 5 to maintain airtightness between the inside of the processing container 8 and the outside (atmosphere).

On the other hand, a processing substrate mounting section 10 is provided on the lower surface side of the installation hole 6 so as to face the processing container 8 . This processing substrate mounting section 10 is a flat airtight plate 1.
1, a cylindrical wall 12 that stands up from the upper surface of the airtight plate 11 and is inserted into the installation hole 6, and a pipe-shaped drive shaft 15 that extends vertically from the lower surface of the airtight plate 11.

The drive shaft 15 is hermetically inserted into the insertion hole 14 of the bottom wall 13 of the vacuum transfer chamber 52 via the seal member 42 and projects downwardly and outwardly. Inside the cylindrical wall 12, a first electrode 16 is fitted into the center hole of the processing substrate mounting section 10 and placed upright on the airtight plate 11. A recess 17 is formed on the upper surface of the first electrode 16, and a substrate 18a is placed on the upper surface of the first electrode 16 so as to cover the recess.

Further, a push-up plate 19 is housed in the recess 17, and a push-up rod 20 projects outward from the center of the push-up plate 19 through the center hole of the first electrode 16. The push-up plate 19 and push-up bar 20 constitute a processed substrate lift 21. The lower part of the push-up rod 20 is connected to a vertical drive mechanism (not shown), and by operating this vertical drive mechanism, the substrate 18a can be pushed upward.

Further, the drive shaft 15 of the processing substrate platform 10 is also connected to a vertical drive mechanism (not shown), and by operating this vertical drive mechanism, for example, by moving the processing substrate platform 10 upward. As shown in FIG. 1, a space serving as a processing chamber 1 is formed between the processing substrate mounting section 10 and the processing container 8. As shown in FIG.

In this case, a sealing member 22 is fitted into the upper surface of the outer periphery of the airtight plate 11.
2 achieves airtight pressure contact between the inner surface (lower surface) of the top wall 5 and the airtight plate 11. In addition, the vacuum transfer chamber 52
In order to achieve airtight separation between the processing chamber 1 and the airtight plate 1,
A seal member 23 is interposed between the center hole wall of the first electrode 16 and the push-up rod 20, respectively. The first electrode 16 is connected to a high frequency power source 24.

On the other hand, a second electrode 25 is disposed on the processing chamber 8 side facing the substrate 18a, and a DC voltage is applied to the second electrode 25 from a power source (not shown). The reason for providing the second electrode 25 to which a DC voltage is applied is to control the energy of ions incident on the substrate 18a. A gas introduction system 26 is connected to this second electrode 25, and the introduced gas is transferred to the second electrode 25.
The liquid is ejected from a plurality of holes provided in the substrate 18a toward the substrate 18a.

Furthermore, the processing container 8 includes an exhaust port 27, a valve 28, a vacuum pump 29, and a vacuum gauge 30.
A first exhaust system 31 is connected thereto. Vacuum pump 29 of this first exhaust system 31
For example, a plurality of pumps such as an oil rotary pump, a mechanical roots blower pump, an oil diffusion pump, a turbo molecular pump, a cryopump, or a combination thereof are used. Further, if necessary, a variable conductance may be provided between the processing chamber 1 and the vacuum pump 29 as a component of the first exhaust system 31 to control the pressure within the processing chamber 1 at a constant level, and a A trap may be provided before and after the vacuum pump 29 to remove the air.

On the other hand, a preliminary vacuum container 32 that covers the installation hole 7 is airtightly and removably attached to the upper surface of the installation hole 7 via a seal member 33. Further, on the lower surface side of the installation hole 7, a preliminary vacuum substrate mounting section 34, which is substantially similar to the processing substrate mounting section 10, is provided so as to be able to move up and down (advance and retreat) in conjunction with a vertical drive mechanism (not shown). ing. Then, the preliminary vacuum substrate mounting section 34
moves upward, and the airtight plate 35 of the preliminary vacuum substrate placement section 34 and the lower surface of the top wall 5 come into airtight contact via the sealing member 22a, whereby the preliminary vacuum substrate placement section 34 and the preliminary vacuum container 32 A space serving as a preliminary vacuum chamber 2 is formed in between.

A substrate mounting surface is formed on the upper surface of the cylindrical wall 36 of the preliminary vacuum substrate mounting section 34, and a substrate 18b introduced from the outside is mounted on this substrate mounting surface. Also,
Inside the cylindrical wall 36, a preliminary vacuum substrate lift 37 similar to the processed substrate lift 21 is provided so as to be movable up and down. In order to ensure airtightness between the preliminary vacuum chamber 2 and the outside (atmosphere), a sealing member 40 is interposed between the drive shaft 38 of the preliminary vacuum substrate mounting section 34 and the push-up rod 39 of the preliminary vacuum substrate lift 37. In addition, in order to ensure airtightness between the vacuum transfer chamber 52 and the outside air, a seal member 42 is provided between the insertion hole 41 provided in the bottom wall 13 of the vacuum transfer chamber 52 and the drive shaft 38.
is interposed. Further, a second exhaust system 47 consisting of valves 43 and 44, a vacuum pump 45, an exhaust port 53, and a vacuum gauge 46 is connected to the vacuum transfer chamber 52 and the preliminary vacuum chamber 2. By controlling the opening and closing of 43 and 44, the vacuum transfer chamber 52 and the preliminary vacuum chamber 2 can be evacuated individually or simultaneously. As the vacuum pump 45, in order to quickly evacuate the preliminary vacuum chamber 2, an oil diffusion pump, a cryopump, a turbo molecular pump, or the like having a high pumping speed is used.

In addition, inside the vacuum transfer chamber 52, with the preliminary vacuum substrate placement section 34 and the processed substrate placement section 10 moved downward, the processing substrate placement section 10 is placed from a position directly above the preliminary vacuum substrate placement section 34. Board 18b to position directly above
A substrate transport mechanism 48 is provided to transport the substrate.

This substrate transport mechanism 48 is constructed by known means such as a transport belt, a linearly moving fork, and a rotating arm. Further, the vacuum transfer chamber 52 is provided with a relay stage 50 that functions as a relay place for substrate transfer.

By the way, a substrate holder 3 capable of accommodating a plurality of substrates 18 is provided at a position near the outside of the vacuum transfer chamber 52 and is movable up and down, and a substrate transfer mechanism 49 is provided near the substrate holder 3. ing.

This substrate transfer mechanism 49 has a similar structure to the substrate transfer mechanism 48 provided in the vacuum transfer chamber 52. This substrate transport mechanism 49 takes out the substrate 18 from the substrate holder 3 with the preliminary vacuum container 32 removed, and places the taken out substrate 18 on the preliminary vacuum substrate mounting section 34.

The apparatus of this embodiment is constructed as described above, and its operation will be explained below with reference to FIGS. 1 and 2. In the state shown in FIG. 1, the processing substrate placement section 10 and the preliminary vacuum substrate placement section 34 are in the upward movement (advancing movement) position, and the processing chamber 1, preliminary vacuum chamber 2, and substrate transfer chamber 4 are each airtight. They are in a state of isolation. Then, the first exhaust system 31 and the second
Due to the exhaust operation of the exhaust system 47, the processing chamber 1, preliminary vacuum chamber 2, and substrate transfer chamber 4 are in a high vacuum state.

Under such a high vacuum environment, dry etching processing and the like of the substrate 18a are performed in the processing chamber 1. That is, in the processing chamber 1 there is a gas introduction system 26.
A gas mainly consisting of halogenated carbon is introduced through the electrode 16, while high frequency power is applied to the first electrode 16, and a DC voltage is applied to the second electrode 25. As a result, the introduced gas becomes a plasma state, and activated atoms and molecules in an excited state act on the substrate 18a, and the desired vacuum processing such as dry etching processing is performed according to well-known behavior.

After the vacuum processing of the substrate 18a in the processing chamber 1 is completed in this manner, the processing substrate mounting section 10 is moved downward (backward movement). Then, as shown in FIG. 2, the processed substrate lift 21 is moved upward,
Move the vacuum-treated substrate 18a to substrate transport path position H.
push up to. On the other hand, when the preliminary vacuum chamber 2 reaches a predetermined vacuum pressure, the preliminary vacuum substrate mounting section 34 is moved downward and the preliminary vacuum substrate lift 37 is moved upward, and the substrate 18b is also moved to the substrate transport path position H.
It is in a state of being pushed up to. In this state, the substrate transfer mechanism 48 carries out the transfer operation, and the substrate 18a
and 18b are first transported to the relay stage 50. Then, the substrate 18a is transferred from this relay stage 50 to the preliminary vacuum substrate lift 37,
Further, the substrate 18b is transported to the processing substrate lift 21. In other words, the substrate 18a and the substrate 18b are exchanged. After this substrate exchange, the processed substrate lift 21 and the preliminary vacuum substrate lift 37 are moved downward, and the substrate 18a is moved to the preliminary vacuum substrate mounting section 3.
4, and the substrate 18b is placed on the first electrode 1
It is placed on top of 6. Next, the processing substrate mounting section 10
Then, the preliminary vacuum substrate mounting section 34 is moved upward, and as shown in FIG. 1, the processing chamber 1, preliminary vacuum chamber 2, and vacuum transfer chamber 52 are hermetically isolated.

In this state, vacuum processing of the substrate 18b is performed in the processing chamber 1, while in the pre-vacuum chamber 2, the pre-vacuum container 32 is removed, and the pre-vacuum substrate lift 37 is moved up and down, and the substrate transport mechanism 49 The vacuum-treated substrate 1
The unloading of the substrate 8a and the loading of the next substrate 18 from the substrate holder 3 are accomplished. Then, this unprocessed substrate 18
is placed on the pre-vacuum substrate mounting section 34, the pre-vacuum container 32 is reinstalled, and the pre-vacuum chamber 2 is evacuated by the evacuation operation of the second exhaust system 47. In this way, by repeating a series of processes from introducing the unprocessed substrate 18 into the preliminary vacuum chamber 2 to taking out the vacuum-treated substrate, vacuum processing of a plurality of substrates is automatically performed in sequence.

In this case, the vacuum pressure in the processing chamber 1 and vacuum transfer chamber 52 is constantly detected by the vacuum gauges 30 and 46, and whenever the vacuum pressure decreases, the first exhaust system 31 and the second The exhaust system 47 is operated to perform an exhaust operation to maintain the vacuum pressure at an optimum level at all times.

As described above, according to this embodiment, when a substrate is taken into or out of the preliminary vacuum chamber 2, the preliminary vacuum chamber 2, the vacuum transfer chamber 4, and the processing chamber 1 are completely isolated, and the Since the entrance and exit of the substrate to and from the vacuum chamber 2 is limited to only one location, the processing chamber 1 and the vacuum transfer chamber 52 will not be contaminated by air intrusion due to the entry and exit of the substrate from the outside. Further, since the preliminary vacuum chamber 2 only has a volume necessary to accommodate one substrate, it can be made into a very small space. Therefore, it becomes possible to shorten the evacuation time of the preparatory vacuum chamber 2, improve work efficiency in substrate processing, and is advantageous in mass production of semiconductor substrates. Furthermore, the preliminary vacuum chamber 2
The substrate transport mechanism 48 that transports the substrate between the auxiliary vacuum chamber 2 and the processing chamber 1 is not distributed among the preparatory vacuum chamber 2 and the processing chamber 1, but is centrally located within the vacuum transport chamber 52, so that the overall system There is an advantage that the configuration can be greatly simplified, and the conventional complicated and troublesome work of having to mutually adjust substrate transport mechanisms distributed in each room is freed. Further, since the processing container 8 of the processing chamber 1 is configured to be detachable, when changing the mode of vacuum processing of the substrate, it is only necessary to attach the corresponding processing container 8. It is possible to extremely easily change the apparatus in accordance with changes in the substrate processing mode without requiring complicated and troublesome operations.
In that case, when the processing chamber 1 is evacuated, the processing chamber 1
Since the processing container 8 is pressed and held against the mounting surface due to the pressure difference between the inside and the atmosphere, the mechanical configuration of the mounting mechanism for the processing container 8 can be simplified.
Changes to the processing chamber 1 and maintenance and inspection of the processing chamber 1 are performed while the processing chamber 1 is isolated from the preliminary vacuum chamber 2 and the vacuum transfer chamber 52. Therefore, after the changes and inspections are completed, the entire apparatus is This has the advantage that the time required to recover the vacuum state for operation can be shortened.

Note that in the above embodiment, high frequency power is applied to the first electrode 16 and DC voltage is applied to the second electrode 25, but this is reversed and a DC voltage is applied to the first electrode 16, High frequency power may be applied to the second electrode.

(Effects of the Invention) Since the present invention has the configuration and operation described above, it is possible to prevent the processing chamber and the substrate transfer chamber from being contaminated by air intrusion due to the entry and exit of substrates in the preliminary vacuum chamber. Therefore, very high quality substrate vacuum processing with good reproducibility can be achieved.

In addition, the pre-vacuum chamber is small, that is, the volume of the chamber is small, and there is only one point where the substrate enters and exits from the outside, so the time for evacuation of the pre-vacuum chamber is reduced and the vacuum of the processing chamber is reduced. It is now possible to prevent pressure drop, and as a result,
The work efficiency of substrate processing can be improved.

Furthermore, the processing chamber can be changed very easily by replacing the processing container in the processing chamber, and thus the apparatus of the present invention can be effectively utilized for multiple purposes.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing the structure of an embodiment according to the present invention, FIG. 2 is a sectional view showing the operation of this embodiment, and FIGS. 3 to 5 are diagrams showing the structure of a conventional device. 1...Processing chamber, 2, 2a, 2b...Preliminary vacuum chamber, 3...Substrate holder, 4...Substrate transfer chamber, 5...
...Top wall, 6,7...Installation hole, 8...Processing container, 9
... Seal member, 10 ... Processed substrate mounting section, 11
... Airtight plate, 12 ... Cylinder wall, 13 ... Bottom wall, 14
... Insertion hole, 15 ... Drive shaft, 16 ... First electrode, 17 ... Recess, 18, 18a, 18b ... Substrate, 19 ... Push-up plate, 20 ... Push-up rod,
21...processed substrate lift, 22, 22a, 23...
... Seal member, 24 ... High frequency power supply, 25 ... Second electrode, 26 ... Gas introduction system, 27 ... Exhaust port, 28 ... Valve, 29 ... Vacuum pump,
30... Vacuum gauge, 31... First exhaust system, 3
2... Preliminary vacuum container, 33... Seal member, 34
...Preliminary vacuum substrate mounting section, 35...Airtight plate, 36
...Cylinder wall, 37...Preliminary vacuum substrate lift, 38...
... Drive shaft, 39 ... Push-up rod, 40 ... Seal member, 41 ... Insertion hole, 42 ... Seal member, 4
3, 44...Valve, 45...Vacuum pump, 46
...Vacuum gauge, 47...Second exhaust system, 48,
49...Substrate transport mechanism, 50...Relay stage,
51a-51i... Valve, 52... Vacuum transfer chamber, 53... Exhaust port.

Claims (1)

[Claims] 1. A preliminary vacuum chamber, a vacuum transfer chamber, and a processing chamber each having an evacuation system are provided, and substrates are inserted one by one from the atmosphere into the preliminary vacuum chamber, and the substrates are transferred to the vacuum transfer chamber. After the substrate is vacuum-processed in the processing chamber, the substrate is returned to the pre-vacuum chamber via the vacuum transfer chamber, and the substrate is transferred from the pre-vacuum chamber to the pre-vacuum chamber. In a vacuum processing apparatus that takes out a substance into the atmosphere, the preliminary vacuum chamber and the processing chamber are removably provided in a pair of installation holes formed in the wall surface of the vacuum transfer chamber, and the holes are airtight from the atmosphere side. Separate container parts are provided to cover the vacuum transfer chamber, and the container parts are movably moved forward and backward from the indoor side of the vacuum transfer chamber in a state opposite to the container parts, and the container parts are isolated from the vacuum transfer chamber by moving forward and backward, thereby creating an airtight chamber space. The substrate mounting section is provided with a substrate moving mechanism for moving the substrate to be placed on the transfer path position, and the substrate mounting section is provided with a substrate moving mechanism for moving the substrate to be placed on the transfer path position. A vacuum processing apparatus comprising a substrate transport mechanism that transports a substrate moved to a transport path position by the movement mechanism to a predetermined position. 2. The vacuum processing apparatus according to claim 1, wherein an electrode to which direct current or alternating current power is applied is provided on the substrate platform forming the processing chamber.