JP2778020B2 - Surface treatment equipment - Google Patents
Surface treatment equipmentInfo
- Publication number
- JP2778020B2 JP2778020B2 JP1121053A JP12105389A JP2778020B2 JP 2778020 B2 JP2778020 B2 JP 2778020B2 JP 1121053 A JP1121053 A JP 1121053A JP 12105389 A JP12105389 A JP 12105389A JP 2778020 B2 JP2778020 B2 JP 2778020B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- surface treatment
- gas
- chamber
- sample stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、CVD,PVDのように、密閉された容器内に
気体あるいはミスト状物質を導入しつつ排気装置による
排気により作られた一定圧力の雰囲気に、光，熱，電気
・磁気的な力あるいはイオンや電子などの荷電粒子を作
用させ、雰囲気物質や雰囲気物質の化合物を、該密閉容
器と気密に仕切られている別室から仕切りを開いて搬出
され試料台に載置された試料の表面に堆積，付着させる
表面処理装置のメンテナンス周期の長期化のための構成
に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a constant pressure generated by exhausting a gas or a mist-like substance into a closed container, such as CVD and PVD, by an exhaust device. By applying charged particles such as light, heat, electric or magnetic force or ions or electrons to the atmosphere of the atmosphere, the partition of the atmosphere substance or the compound of the atmosphere substance is opened from another room which is air-tightly separated from the closed container. The present invention relates to a configuration for prolonging a maintenance cycle of a surface treatment apparatus that deposits and adheres to a surface of a sample placed and carried out on a sample stage.
第５図にこの種表面処理装置の一例としてプラズマCV
D装置の従来の構成例を示す。導波管12を介してプラズ
マ生成室１内に導入されたマイクロ波と励磁ソレノイド
14が生ずる磁力線とによる電磁界の作用により、ガス導
入管路19を介して該プラズマ生成室内に導入されたキャ
リアガス（プラズマ生成用ガス）をプラズマ化し、プラ
ズマ生成室１の下方の開口９から下方へ広がる磁力線に
よる拡散効果により反応室２内に流れ出したプラズマ
を、ガス導入管路16を介して反応室２内に導入された反
応ガスに作用させて化学的・物理的変化を生じさせ、生
成された物質を試料10の表面に堆積，付着させるもので
ある。このとき、生成された物質は、試料10の表面だけ
でなく、被処理試料が貯蔵されるロードロック室３を、
試料10の表面処理中反応室２から気密に隔離するゲート
バルブ４の試料出入口にも堆積，付着する。なお、図中
符号13は、プラズマ生成室１内を導波管12内の大気圧雰
囲気から気密に仕切るための，誘電体からなる真空窓で
ある。FIG. 5 shows a plasma CV as an example of this type of surface treatment apparatus.
1 shows a conventional configuration example of a D apparatus. Microwave introduced into plasma generation chamber 1 via waveguide 12 and excitation solenoid
The carrier gas (plasma generation gas) introduced into the plasma generation chamber via the gas introduction pipe 19 is turned into plasma by the action of the electromagnetic field caused by the magnetic field lines generated by the magnetic field lines 14. The plasma flowing into the reaction chamber 2 due to the diffusion effect of the lines of magnetic force spreading downward is caused to act on the reaction gas introduced into the reaction chamber 2 through the gas introduction pipe 16 to cause a chemical / physical change, The generated substance is deposited and adhered to the surface of the sample 10. At this time, the generated substance not only covers the surface of the sample 10 but also the load lock chamber 3 where the sample to be processed is stored.
During the surface treatment of the sample 10, the sample is also deposited and adhered to the sample inlet / outlet of the gate valve 4 that is hermetically isolated from the reaction chamber 2. Reference numeral 13 in the figure denotes a vacuum window made of a dielectric for airtightly partitioning the inside of the plasma generation chamber 1 from the atmospheric pressure atmosphere in the waveguide 12.
この様な従来装置においては、試料の出し入れのため
ゲートバルブ４を開閉すると、堆積，付着していた物質
がゲートバルブのシール部につき、気密保持ができなく
なると言う問題があった。また、プラズマ流からゲート
バルブまでの距離が近いので、ラジカルやプラズマが直
接ゲートバルブを叩くため、シール材の痛みがはやく、
部品の寿命が短いと言う欠点があった。In such a conventional apparatus, when the gate valve 4 is opened and closed for loading and unloading of the sample, there is a problem that the deposited and adhered substances may not be able to maintain airtightness on the sealing portion of the gate valve. In addition, since the distance from the plasma flow to the gate valve is short, radicals and plasma hit the gate valve directly, so the seal material is quickly painful,
There was a drawback that the life of the parts was short.
本発明の目的は、この様な問題を解決し、シール材寿
命を十分に活かした、メンテ周期が長く、稼働率の高い
表面処理装置を提供することである。An object of the present invention is to provide a surface treatment apparatus which solves such a problem, makes full use of the life of the sealing material, has a long maintenance cycle, and has a high operation rate.
上記課題を解決するために、この発明においては、試
料が載置される試料台を可動とし、試料の受け渡し位置
と処理位置とを分け、表面処理中は両位置が実質的に隔
離され、密閉容器内の雰囲気物質あるいはその化合物が
密閉容器から受け渡し位置には到来しない構成とする。
すなわち、試料台が、試料が載置される面を底面とする
筒状に形成されるとともに、密閉容器と別室との間に、
筒状に形成された試料台が試料とともに該試料台の軸線
方向に小間隔を保って通過可能な狭径部を介して該密閉
容器に連通するとともに前記別室から試料が搬入される
受渡し室が介装され、前記試料台が前記狭径部に接する
ことなく、且つ前記小間隔の幅が試料の表面処理時にお
ける前記密閉容器内雰囲気を構成する粒子の平均自由行
程より小さいこととする。In order to solve the above-mentioned problems, in the present invention, a sample stage on which a sample is placed is made movable, and a sample transfer position and a processing position are divided. Atmospheric substances or their compounds in the container do not arrive at the delivery position from the closed container.
That is, the sample stage is formed in a cylindrical shape with the surface on which the sample is placed as the bottom surface, and between the closed container and the separate chamber,
A sample chamber formed in a cylindrical shape communicates with the sample via the narrow-diameter portion that can pass at a small interval in the axial direction of the sample table together with the sample and the transfer chamber into which the sample is loaded from the separate chamber. It is provided that the sample stage is not in contact with the narrow-diameter portion, and the width of the small interval is smaller than the mean free path of the particles constituting the atmosphere in the closed container during the surface treatment of the sample.
好ましくは、受渡し室の壁面を貫通してガス導入口が
形成され、試料の表面処理時に、プラズマ生成用ガス、
水素ガス、ならびに不活性ガスから選ばれる単一元素か
らなる気体を該ガス導入口を介して受渡し室内に導入し
て、該受渡し室内圧力を前記密閉容器内圧力よりも高い
圧力に保持し、該受渡し室から密閉容器内へ試料台と狭
径部との小間隔を介して前記気体をリークさせつつ試料
の表面処理を行うこととする。Preferably, a gas inlet is formed through the wall surface of the delivery chamber, and a plasma generating gas,
Hydrogen gas, and a gas composed of a single element selected from an inert gas is introduced into the delivery chamber through the gas introduction port, and the delivery chamber pressure is maintained at a pressure higher than the pressure in the closed vessel, The surface treatment of the sample is performed while allowing the gas to leak from the delivery chamber into the closed container through a small space between the sample stage and the narrow diameter portion.
表面処理装置をこのように構成することにより、別室
から受渡し室への試料の搬入は、仕切りを開いて密閉容
器，受渡し室，別室が連通した清浄な真空雰囲気中で行
われ、搬入後試料台に載置された試料は、筒状試料台の
軸線方向に駆動されて狭径部を通って密閉容器内へ挿入
され、試料台と狭径部との間に周方向の小間隙が形成さ
れた密閉容器と受渡し室との間の流れのコンダクタンス
が小さくなり、小間隙の幅が前記密閉容器内雰囲気を構
成する粒子の平均自由工程より小さい実質的に試料台が
狭径部を閉鎖した状態で表面処理が行われるから、実施
例の項で説明するように、狭径部の軸方向長さと小間隙
の大きさとを適宜に設定ことにより、密閉容器から受渡
し室内へ流入する雰囲気物質もしくはその化合物は極め
て少なくなり、さらに、受渡し室の壁面を貫通して形成
されたガス導入口を介し、プラズマ生成室に導入される
プラズマ生成用ガス、あるいはMOCVD（有機金属化学的
気相成長）におけるH2ガスのごときキャリアガス、と同
一ガス、もしくは不活性ガスなど、単一元素からなる気
体を受渡し室内に導入して受渡し室内を密閉容器内圧力
よりも高圧力に保持し、試料台と狭径部との間の小間隙
を介して密閉容器内にリークさせることいにより、密閉
容器から受渡し室内への密閉容器内雰囲気物質あるいそ
の化合物の流入を実質完全に阻止することができる。By configuring the surface treatment apparatus in this manner, the sample is transferred from the separate chamber to the transfer chamber in a clean vacuum atmosphere in which the partition is opened and the closed container, the transfer chamber, and the separate chamber communicate with each other. The sample placed on the sample stage is driven in the axial direction of the cylindrical sample stage, inserted into the closed vessel through the narrow diameter portion, and a small circumferential gap is formed between the sample stage and the narrow diameter portion. A state in which the conductance of the flow between the closed container and the delivery chamber becomes small, and the width of the small gap is substantially smaller than the mean free path of the particles constituting the atmosphere in the closed container, and the sample stage substantially closes the narrow diameter portion. Since the surface treatment is performed, as described in the section of the embodiment, by appropriately setting the axial length of the narrow diameter portion and the size of the small gap, the atmosphere substance flowing into the delivery chamber from the closed container or the atmosphere substance or the like. Very few compounds , Through the gas inlet formed through the wall of the delivery chamber, the plasma generation gas is introduced into the plasma generating chamber or MOCVD (metal organic chemical vapor deposition) in a carrier gas such as H 2 gas, A gas consisting of a single element, such as the same gas or an inert gas, is introduced into the delivery chamber to maintain the delivery chamber at a pressure higher than the pressure inside the closed vessel, and a small gap between the sample stage and the narrow diameter part By leaking into the closed container via the container, it is possible to substantially completely prevent the flow of the atmospheric substance or the compound in the closed container from the closed container into the delivery chamber.
第１図に本発明の第１の実施例を示す。図中、第５図
と同一の部外には同一符号を付し、説明を省略する。FIG. 1 shows a first embodiment of the present invention. In the figure, the same parts as those in FIG. 5 are denoted by the same reference numerals, and description thereof will be omitted.
この実施例では、試料の受渡し位置と処理位置とを分
けるための狭径部21を密閉容器を構成する反応室20の底
面側に形成し、こお狭径部21を介して反応室20に連通す
る受渡し室６を該反応室20と同軸に配し、別室であるロ
ードロック室３はゲートバルブ４を介して受渡し室６に
結合されている。受渡し室６の底面には、狭径部21と同
軸に開口6aが形成され、下方にねじ棒18aが形成され上
方端が筒状試料台15の底面に結合された駆動棒18がこの
開口6aを垂直に貫いて直線駆動機構24の平歯車25と螺合
している。この直線駆動機構24は、この実施例では、駆
動モータ27と，この駆動モータ27により回転駆動される
平歯車26と、この平歯車26と噛み合う平歯車25とを主要
部材として構成されている。平歯車25には、軸まわり非
回転に軸方向に案内されるねじ棒18と螺合するねじが中
心部に形成され、、固定位置で回転駆動されることによ
り、駆動棒18を軸方向に進退させる。なお、駆動棒18と
開口6aとの間は金属ベローズ７を介して気密が保たれて
いる。In this embodiment, a narrow-diameter portion 21 for separating a sample transfer position and a processing position is formed on the bottom surface side of a reaction chamber 20 constituting a closed container, and is formed in the reaction chamber 20 through the narrow-diameter portion 21. The communicating transfer chamber 6 is coaxial with the reaction chamber 20, and the load lock chamber 3, which is a separate chamber, is connected to the transfer chamber 6 via the gate valve 4. An opening 6 a is formed on the bottom surface of the transfer chamber 6 coaxially with the narrow diameter portion 21, a screw rod 18 a is formed below, and a driving rod 18 whose upper end is coupled to the bottom surface of the cylindrical sample table 15 has the opening 6 a. And screwed into the spur gear 25 of the linear drive mechanism 24 vertically. In this embodiment, the linear drive mechanism 24 includes a drive motor 27, a spur gear 26 that is rotationally driven by the drive motor 27, and a spur gear 25 that meshes with the spur gear 26 as main members. In the spur gear 25, a screw screwing with a screw rod 18 guided in the axial direction so as not to rotate around the axis is formed at the center, and is driven to rotate at a fixed position, so that the drive rod 18 is Let go. Airtightness is maintained between the drive rod 18 and the opening 6a via the metal bellows 7.
このように構成された表面処理装置の操作は次のよう
に行われる、表面処理に先立ち、直線駆動機構24を操作
して試料台15を、破線で示す受渡し位置まで移動させ
る。次にゲートバルブ４を開いて受渡し室６とロードロ
ック室３とを真空状態で連通させ、図示されないハンド
リング機構により、ロードロック室内の被処理試料を試
料台15に載置してゲートバルブ４を閉じる。しかる後、
直線駆動機構24を操作して試料台15を実線の位置まで移
動させ、表面処理工程に入る、表面処理中の試料台15と
狭径部21との間の小間隙の大きさおよび狭径部の長さを
拡大して第４図に示す。小間隙の幅ｄを、反応室内雰囲
気を構成する粒子の平均自由行程λ以下とし、狭径部の
軸方向長さＨを が満たされる長さとすることにより、入射角θ（tanθ
＝d/H）までの粒子の直線的進入を阻止することができ
る。この種の装置での平均自由行程は数mm程度であるか
ら、狭径部の構成は容易に可能である。The operation of the surface treatment apparatus thus configured is performed as follows. Prior to the surface treatment, the linear drive mechanism 24 is operated to move the sample table 15 to the delivery position indicated by the broken line. Next, the gate valve 4 is opened to make the delivery chamber 6 and the load lock chamber 3 communicate with each other in a vacuum state. The sample to be processed in the load lock chamber is placed on the sample table 15 by a handling mechanism (not shown), and the gate valve 4 is opened. close. After a while
Operate the linear drive mechanism 24 to move the sample stage 15 to the position indicated by the solid line, and enter the surface treatment step.The size of the small gap between the sample stage 15 and the narrow-diameter portion 21 during the surface treatment and the narrow-diameter portion FIG. 4 is an enlarged view of the length. The width d of the small gap is equal to or less than the mean free path λ of the particles constituting the reaction chamber atmosphere, and the axial length H of the narrow diameter portion is Is satisfied, the incident angle θ (tan θ
= D / H). Since the mean free path of this type of apparatus is on the order of several mm, the configuration of the narrow diameter portion can be easily achieved.
第２図に本発明の第２の実施例を示す。この実施例で
は、受渡し室６の壁面を貫通してガス導入口17が形成さ
れ、このガス導入口17から、プラズマ生成室１に導入さ
れるプラズマ生成用ガスと同一のガス，例えば試料10の
表面にSiN膜を形成させる場合には、N2ガスを受渡し室
内に導入して室内圧力を反応室20内の雰囲気圧力よりも
高圧力に保ち、試料台15と狭径部21との間の小間炭22を
介して反応室20内にリークさせる。反応室20内の雰囲気
粒子は流れに逆らって受渡し室内へ進入することは極め
て困難であるから、受渡し室６内への雰囲気粒子の進入
は実質完全に阻止することができる。FIG. 2 shows a second embodiment of the present invention. In this embodiment, a gas inlet 17 is formed through the wall surface of the transfer chamber 6, and the same gas as the plasma generating gas introduced into the plasma generating chamber 1, for example, the sample 10, is introduced from the gas inlet 17. When forming a SiN film on the surface, N 2 gas is introduced into the delivery chamber to maintain the chamber pressure at a higher pressure than the atmospheric pressure in the reaction chamber 20, and the space between the sample table 15 and the narrow-diameter portion 21 is maintained. Leak into the reaction chamber 20 via the booth charcoal 22. Since it is extremely difficult for the atmosphere particles in the reaction chamber 20 to enter the delivery chamber against the flow, the entry of the atmosphere particles into the delivery chamber 6 can be substantially completely prevented.
第３図は、本発明を、試料表面に形成されている２層
薄膜や交互に重ね合わせて蒸着した多層膜に高エネルギ
のイオンを注入し、各層の原子を混合させて化合物や固
溶体を作り、あるいは試料表面の堆積物質を試料内へ叩
き込むイオンビームミキシングあるいはイオンビームデ
ポジションと呼ばれる装置に適用した例を示す。ここ
で、符号28はイオンビーム100の走行チャンネルを示
す。FIG. 3 shows a method of forming a compound or a solid solution by implanting high-energy ions into a two-layer thin film formed on a sample surface or a multi-layer film alternately deposited on the sample surface and mixing the atoms in each layer. An example in which the present invention is applied to an apparatus called ion beam mixing or ion beam deposition in which a deposited material on a sample surface is driven into the sample. Here, reference numeral 28 denotes a traveling channel of the ion beam 100.
以上の実施例では、狭径部の軸方向の必要長さを得る
のに、反応室底面の開口を包囲する周壁を形成している
が、反応室20内に配される別部材を周壁として利用する
構成も可能である。例えば、反応室内壁面への膜の付着
を防止するために反応室と同心に配される防着筒を反応
室底面の開口に挿入する構成も可能である。In the above embodiment, the peripheral wall surrounding the opening at the bottom of the reaction chamber is formed to obtain the required length in the axial direction of the narrow diameter portion, but another member disposed in the reaction chamber 20 is used as the peripheral wall. A configuration to use it is also possible. For example, it is also possible to adopt a configuration in which a deposition prevention cylinder arranged concentrically with the reaction chamber is inserted into an opening at the bottom of the reaction chamber in order to prevent the film from adhering to the wall surface of the reaction chamber.
以上に述べたように、本発明によれば上記した各構成
を採用した結果、ゲートバルブの試料出入口の汚損やシ
ール材の劣化が低減され、シール材の寿命が長くなると
ともにメンテナンス周期の延長が可能となり、装置の稼
働率が向上する。As described above, according to the present invention, as a result of employing each of the above-described configurations, contamination of the sample port of the gate valve and deterioration of the sealing material are reduced, the life of the sealing material is extended, and the maintenance cycle is extended. It becomes possible, and the operation rate of the device is improved.
特に、本発明においては、受渡し室と密閉容器との間
において、試料台により、試料台より僅かに径の大きい
狭径部を実質閉鎖状態として、受渡し室への化合物の到
来を防止している。このような本発明によれば、試料台
と受渡し室とは接触しない。試料台と受渡し室とが接触
する構成であると、接触部において粉状物か発生し、そ
の粉状物が次回の成膜時までに剥離して、例えば第１図
の実施例の場合においては、ゲートバルブ４のシール材
に飛来して付着し、シール材を劣化させてシール不良を
招く可能性がある、しかし、本発明によれば、狭径部と
試料台とを接触させることはないので、シール不良の可
能性を皆無にすることができる。In particular, in the present invention, between the delivery chamber and the sealed container, the sample stage is used to prevent the compound from coming to the delivery room by setting the narrow diameter portion slightly larger than the sample stage in a substantially closed state. . According to the present invention, the sample table and the delivery chamber do not come into contact with each other. When the sample stage and the transfer chamber are in contact with each other, a powdery substance is generated at the contact portion, and the powdery substance is separated by the next film formation. For example, in the case of the embodiment shown in FIG. May fly and adhere to the sealing material of the gate valve 4, deteriorating the sealing material and causing poor sealing. However, according to the present invention, it is not possible to make the narrow-diameter portion and the sample table contact. Since there is no seal, the possibility of poor sealing can be completely eliminated.
第１図は本発明の第１の実施例による表面処理装置の構
成を示す縦断面図、第２図は本発明の第２の実施例によ
る表面処理装置の構成を示す縦断面図、第３図は本発明
を第1,第２の実施例とは別の表面処理装置に適用した応
用例を示す縦断面図、第４図は本発明における狭径部で
の寸法条件を説明するための拡大断面図、第５図は従来
の表面処理装置の構成例を示す縦断面図である。 3:ロードロック室（別室）、4:ゲートバルブ（仕切
り）、5,15:試料台、6:受渡し室、8:リークガス（単一
元素の気体）、10:試料、17:ガス導入口、21:狭径部、2
2:小間隙、24:直線駆動機構、101,102,103:密閉容器。FIG. 1 is a longitudinal sectional view showing the structure of a surface treatment apparatus according to a first embodiment of the present invention, FIG. 2 is a longitudinal sectional view showing the structure of a surface treatment apparatus according to a second embodiment of the present invention, and FIG. FIG. 4 is a longitudinal sectional view showing an application example in which the present invention is applied to a surface treatment apparatus different from the first and second embodiments, and FIG. 4 is a view for explaining dimensional conditions at a narrow diameter portion in the present invention. FIG. 5 is an enlarged cross-sectional view, and FIG. 5 is a vertical cross-sectional view showing a configuration example of a conventional surface treatment apparatus. 3: Load lock chamber (separate room), 4: Gate valve (partition), 5, 15: Sample table, 6: Delivery chamber, 8: Leak gas (single element gas), 10: Sample, 17: Gas inlet, 21: Narrow diameter part, 2
2: small gap, 24: linear drive mechanism, 101, 102, 103: closed container.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/31 Ｈ０１Ｌ 21/31 Ｂ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/31 H01L 21/31 B
Claims (2)
物質を導入しつつ排気装置による排気により作られた一
定圧力の雰囲気に、光，熱，電気・磁気的な力あるいは
イオンや電子などの荷電粒子を作用させ、雰囲気物質や
雰囲気物質の化合物を、該密閉容器と気密に仕切られて
いる別室から仕切りを開いて搬出され試料台に載置され
た試料の表面に堆積，付着させる表面処理装置におい
て、前記試料台が、試料が載置される面を底面とする筒
状に形成されるとともに、前記密閉容器と別室との間
に、前記筒状に形成された試料台が試料とともに該試料
台の軸線方向に小間隔を保って通過可能な狭径部を介し
て該密閉容器に連通するとともに前記別室から試料が搬
入される受渡し室が介装され、前記試料台が前記狭径部
に接することなく、且つ前記小間隔の幅が試料の表面処
理時における前記密閉容器内雰囲気を構成する粒子の平
均自由行程より小さいことを特徴とする表面処理装置。1. A gas, mist-like substance or the like is introduced into a sealed container, and an atmosphere of a constant pressure created by evacuation by an evacuation device is exposed to light, heat, electric or magnetic force, or ions or electrons. A surface treatment in which charged particles act to deposit and adhere an atmospheric substance or a compound of an atmospheric substance to the surface of a sample placed on a sample stage, which is carried out by opening a partition from a separate chamber which is airtightly separated from the closed container and carried out. In the apparatus, the sample stage is formed in a cylindrical shape having a surface on which a sample is placed as a bottom surface, and the sample stage formed in a cylindrical shape is provided between the closed container and another chamber together with the sample. A transfer chamber, through which the sample is carried from the separate chamber, is communicated with the closed container through a narrow-diameter portion that can pass at a small interval in the axial direction of the sample stage, and the sample stage is provided with the narrow-diameter portion. Without touching The surface treatment apparatus the width of the small gap being less than the mean free path of the particles constituting the closed vessel atmosphere during the surface treatment of the sample.
て、受渡し室の壁面を貫通してガス導入口が形成され、
試料の表面処理時に、プラズマ生成用ガス、水素ガス、
ならびに不活性ガスから選ばれる単一元素からなる気体
を該ガス導入口を介して受渡し室内に導入して、該受渡
し室内圧力を前記密閉容器内圧力よりも高い圧力に保持
し、該受渡し室から密閉容器内へ試料台と狭径部との小
間隔を介して前記気体をリークさせつつ試料の表面処理
を行うことを特徴とする表面処理装置。2. The surface treatment apparatus according to claim 1, wherein a gas inlet is formed through the wall surface of the delivery chamber,
During the surface treatment of the sample, a gas for plasma generation, hydrogen gas,
And introducing a gas consisting of a single element selected from an inert gas into the delivery chamber through the gas inlet, maintaining the delivery chamber pressure at a pressure higher than the pressure in the closed vessel, A surface treatment apparatus for performing surface treatment of a sample while allowing the gas to leak into a closed container through a small space between the sample stage and a narrow diameter portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1121053A JP2778020B2 (en) | 1989-05-15 | 1989-05-15 | Surface treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1121053A JP2778020B2 (en) | 1989-05-15 | 1989-05-15 | Surface treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02301140A JPH02301140A (en) | 1990-12-13 |
| JP2778020B2 true JP2778020B2 (en) | 1998-07-23 |
Family
ID=14801670
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1121053A Expired - Fee Related JP2778020B2 (en) | 1989-05-15 | 1989-05-15 | Surface treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2778020B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3604241B2 (en) * | 1996-10-31 | 2004-12-22 | 東京エレクトロン株式会社 | Vertical heat treatment equipment |
| US20070221128A1 (en) * | 2006-03-23 | 2007-09-27 | Soo Young Choi | Method and apparatus for improving uniformity of large-area substrates |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60115227A (en) * | 1983-11-28 | 1985-06-21 | Plasma Syst:Kk | Plasma processing method and apparatus for the same |
| JPS61168630U (en) * | 1985-03-06 | 1986-10-20 |
-
1989
- 1989-05-15 JP JP1121053A patent/JP2778020B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02301140A (en) | 1990-12-13 |
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