CN114023687A - Dry etching device for detector - Google Patents

Dry etching device for detector Download PDF

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Publication number
CN114023687A
CN114023687A CN202111290568.8A CN202111290568A CN114023687A CN 114023687 A CN114023687 A CN 114023687A CN 202111290568 A CN202111290568 A CN 202111290568A CN 114023687 A CN114023687 A CN 114023687A
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CN
China
Prior art keywords
etching
clamping
dry etching
cavity
driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111290568.8A
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Chinese (zh)
Inventor
万远涛
廖世容
况诗吟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Guangte Technology Co ltd
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Zhejiang Guangte Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Guangte Technology Co ltd filed Critical Zhejiang Guangte Technology Co ltd
Priority to CN202111290568.8A priority Critical patent/CN114023687A/en
Publication of CN114023687A publication Critical patent/CN114023687A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/20Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention discloses a dry etching device for a detector, which is used for carrying out dry etching processing on a wafer and comprises the following components: an etching cavity, which is arranged in an opening way; the etching assembly is arranged in the etching cavity; the air inlet box is communicated with the etching cavity; the vacuumizing equipment is communicated with the etching cavity; a plurality of clamping parts for clamping the wafer; the power part is used for driving the clamping part to enter or separate from the upper area of the etching cavity; a closed loop; and the driving part is used for driving the closed ring to move so as to seal the clamping part and the etching cavity. And stopping the operation after the etching processing is finished. The driving part is used for driving the sealing ring to descend, the power part is used for driving the clamping part to move away, the other clamping part and the wafer are located above the etching cavity, and repeated etching operation is carried out again. Can continuously carry out the etching processing operation, and is efficient.

Description

Dry etching device for detector
Technical Field
The invention relates to the technical field of dry etching, in particular to a dry etching device for a detector.
Background
Dry etching is a technique of performing thin film etching using plasma. When the gas is present in the form of a plasma, it has two characteristics: on one hand, the chemical activity of the gas active free radicals in the plasma is much stronger than that of the gas under normal state, and the gas can react with the material more quickly by selecting proper gas according to the difference of the etched material, so that the aim of etching removal is fulfilled; on the other hand, the electric field can be used for guiding and accelerating the plasma, so that the plasma has certain energy, and when the plasma bombards the surface of the etched object, atoms of the etched object material can be knocked out, thereby achieving the purpose of etching by utilizing physical energy transfer. The existing dry etching method can adopt a single chemical reaction method for etching, and also can adopt a method of combining a chemical etching mode and a physical bombardment mode for etching.
In chinese patent application No.: 201811646355.2, the dry etching machine comprises a process chamber for etching wafers, the process chamber comprises a bottom plate, a lifting component, a rotating component and a bearing component, the bearing component is provided with a wafer fixing device, when dry etching is carried out, the lifting component and the rotating component are adjusted to make the etching surface of the wafer face downwards, etching plasma is released from air holes on the bottom plate and upwards diffused to the etching surface, and the dry etching machine can prevent impurities on the top and the side wall of the process chamber from falling to the etching surface to affect the etching quality. Also for example in chinese patent application No.: 202021646878. X. The technical schemes can not continuously process and have low efficiency and need to be further improved.
Disclosure of Invention
In order to solve the technical problem in at least one aspect in the background art, the invention provides a dry etching device for a detector, which is high in efficiency.
The invention provides a dry etching device for a detector, which is used for dry etching and processing a wafer and comprises the following components:
an etching cavity, which is arranged in an opening way;
the etching assembly is arranged in the etching cavity;
the air inlet box is communicated with the etching cavity;
the vacuumizing equipment is communicated with the etching cavity;
a plurality of clamping parts for clamping the wafer;
the power part is used for driving the clamping part to enter or separate from the upper area of the etching cavity;
a closed loop;
and the driving part is used for driving the closed ring to move so as to seal the clamping part and the etching cavity.
Preferably, the closed ring is sleeved on the etching cavity and can move along the vertical direction;
the driving part is a cylinder, and the output end of the cylinder is connected with the etching cavity.
Preferably, the power part includes:
a support plate;
the output end of the motor is connected with the supporting plate; wherein the content of the first and second substances,
the supporting plates are arranged on the supporting plates and distributed around the output end of the motor.
Preferably, the clamping portion includes:
the clamping assembly is arranged on the supporting plate;
the first sealing ring is arranged on the supporting plate and is positioned around the clamping assembly;
the top end of the closed ring is provided with a first accommodating groove for accommodating the first sealing ring.
Preferably, the clamping part further comprises a second sealing ring which is arranged on the supporting plate and is positioned around the clamping component; and a second accommodating groove for accommodating the second sealing ring is formed in the top end of the closed ring.
Preferably, the cross-sectional width of the first sealing ring or the second sealing ring gradually increases from bottom to top.
Preferably, the clamping assembly comprises a plurality of clamping rods distributed circumferentially, the clamping rods are connected with the supporting plate, and steps for placing wafers are arranged on the clamping rods.
Preferably, the number of steps is at least two.
Preferably, the clamping rods are detachably connected with the supporting plate.
Preferably, a plurality of air inlet holes are formed in the etching cavity, are arranged in a surrounding mode and are communicated with the air inlet box in the etching cavity.
The beneficial effects brought by one aspect of the invention are as follows:
the wafer is clamped by the clamping part. The power part is used for driving the clamping part to move, so that the wafer is positioned above the etching cavity. And the driving part is used for driving the closed ring to rise, and the space area of the clamping part and the space area of the etching cavity are sealed.
And then, pumping gas by using a vacuumizing device, and introducing inert gas by using the gas inlet etching cavity. And etching the wafer by using the etching component.
And stopping the operation after the etching processing is finished. The driving part is used for driving the sealing ring to descend, the power part is used for driving the clamping part to move away, the other clamping part and the wafer are located above the etching cavity, and repeated etching operation is carried out again.
Can continuously carry out the etching processing operation, and is efficient.
Drawings
FIG. 1 is a schematic structural view of one aspect of the present disclosure;
FIG. 2 is a schematic structural view of the sealing ring of the present disclosure in cooperation with a first sealing ring and a second sealing ring;
FIG. 3 is a top view of the disclosed closure ring;
FIG. 4 is a top view of the first seal ring, second seal disclosed herein;
fig. 5 is a schematic structural diagram of a clamping rod disclosed in the present invention.
Detailed Description
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments in the present application may be combined with each other; the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left" and "right", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the positions or elements referred to must have specific orientations, be constructed in specific orientations, and be operated, and thus are not to be construed as limitations of the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 1 to 5, the present invention provides a dry etching apparatus for a probe, which is used for dry etching a wafer, and includes:
an etching chamber 1, which is open; the etching component 2 is arranged in the etching cavity 1; an air inlet box 3 which is communicated with the etching cavity 1; the vacuumizing equipment 4 is communicated with the etching cavity 1; a plurality of clamping parts for clamping the wafer; the power part is used for driving the clamping part to enter or separate from the upper area of the etching cavity 1; a closed ring 5; and the driving part 6 is used for driving the closed ring 5 to move so as to seal the clamping part with the etching cavity 1.
The wafer is clamped by the clamping part. The power part is used for driving the clamping part to move, so that the wafer is positioned above the etching cavity 1. The driving part 6 is used for driving the closed ring 5 to rise, and the space region of the clamping part and the etching cavity 1 is sealed, as shown in fig. 2.
Then, the vacuumizing device 4 is used for sucking gas, and the gas inlet box 3 is used for introducing etching gas into the body 1. And etching the wafer by using the etching component 2.
And stopping the operation after the etching processing is finished. The driving part 6 is used for driving the sealing ring to descend, the power part is used for driving the clamping part to move away, the other clamping part and the wafer are positioned above the etching cavity 1, and the repeated etching operation is carried out again.
The embodiment can continuously carry out the etching processing operation and has high efficiency.
As a further improvement of the above embodiment, in an implementation manner, the closed ring 5 is sleeved on the etching cavity 1, and the etching cavity 1 can move in a vertical direction; the driving part 6 is a cylinder, and the output end of the cylinder is connected with the etching cavity 1. The cylinder can be used for driving the closed ring 5 to lift.
As a further refinement of the above embodiment, in one embodiment the power section comprises:
a support plate 7; the output end of the motor 8 is connected with the supporting plate 7; the clamping parts are arranged on the supporting plate 7 and distributed around the output end of the motor 8. The motor 8 can be utilized to drive the supporting plate 7 to rotate, the position of the clamping part is adjusted, and continuous processing operation is facilitated.
As a further refinement of the above embodiment, in one embodiment the clamping portion comprises:
a clamping assembly mounted on the support plate 7; the first sealing ring 9 is arranged on the supporting plate 7 and is positioned at the periphery of the clamping component; the top end of the closing ring 5 is provided with a first accommodating groove 11 for accommodating the first sealing ring 9. When the wafer is located on the etching chamber 1, the cylinder drives the seal ring 5 to rise, so that the first seal ring 9 enters the first accommodating groove 11 to realize sealing, as shown in fig. 2.
As a further improvement to the above embodiment, in one embodiment, the clamping portion further includes a second sealing ring 10 mounted on the supporting plate 7 and located around the clamping assembly; the top end of the closed ring 5 is provided with a second accommodating groove 12 for accommodating the second sealing ring 10. When the wafer is located on the etching chamber 1, the cylinder drives the seal ring 5 to rise, so that the second seal ring 10 enters the second accommodating groove 12 to realize sealing, as shown in fig. 2. Through setting up first sealing ring 9, second sealing ring 10, first accepting groove 11, second accepting groove 12, realize double-deck sealed processing, sealed effectual.
As a further improvement of the above embodiment, in one embodiment, the cross-sectional width of the first seal ring 9 or the second seal ring 10 is gradually increased from bottom to top. The first sealing ring 9 and the second sealing ring 10 can conveniently enter the first accommodating groove 11 and the second accommodating groove 12.
As a further improvement of the above embodiment, in an embodiment, the clamping assembly includes a plurality of circumferentially distributed clamping rods 13, the clamping rods 13 are connected to the supporting plate 7, and steps 14 for placing wafers are disposed on the clamping rods 13. As shown in fig. 1, 2 and 5, the wafer is placed on the step 14 and supported by the holding rod 13.
As a further improvement of the above-described embodiment, in one embodiment, the number of steps 14 is at least two. The wafer of convenient support different sizes, the adaptability is good.
As a further improvement of the above described embodiment, in one embodiment the clamping lever 13 is detachably connected to the support plate 7. Conveniently change supporting rod 13, conveniently place supporting rod 13.
As a further improvement of the above embodiment, in an implementation manner, a plurality of air inlet holes 15 are formed in the etching chamber 1, and are circumferentially arranged in the etching chamber 1, and the plurality of air inlet holes 15 are communicated with the air inlet box 3. The gas flow is uniformly distributed, and the etching effect is improved.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.

Claims (10)

1. A dry etching device for a detector is used for carrying out dry etching processing on a wafer, and is characterized by comprising:
an etching cavity, which is arranged in an opening way;
the etching assembly is arranged in the etching cavity;
the air inlet box is communicated with the etching cavity;
the vacuumizing equipment is communicated with the etching cavity;
a plurality of clamping parts for clamping the wafer;
the power part is used for driving the clamping part to enter or separate from the upper area of the etching cavity;
a closed loop;
and the driving part is used for driving the closed ring to move so as to seal the clamping part and the etching cavity.
2. The dry etching apparatus for a detector according to claim 1, wherein the closed ring is sleeved on the etching cavity and can move along a vertical direction;
the driving part is a cylinder, and the output end of the cylinder is connected with the etching cavity.
3. The dry etching apparatus for a probe according to claim 1, the power section comprising:
a support plate;
the output end of the motor is connected with the supporting plate; wherein the content of the first and second substances,
the clamping parts are arranged on the supporting plate and distributed around the output end of the motor.
4. The dry etching apparatus for a prober according to claim 3, the clamping portion comprising:
the clamping assembly is arranged on the supporting plate;
the first sealing ring is arranged on the supporting plate and is positioned around the clamping assembly;
the top end of the closed ring is provided with a first accommodating groove for accommodating the first sealing ring.
5. The dry etching apparatus for a prober of claim 4, wherein the clamping portion further comprises a second sealing ring mounted on the support plate and located around the clamping assembly; and a second accommodating groove for accommodating the second sealing ring is formed in the top end of the closed ring.
6. The dry etching apparatus for a probe according to claim 4, wherein the first seal ring or the second seal ring has a cross-sectional width gradually increasing from bottom to top.
7. The dry etching apparatus for detecting the thickness of a wafer according to claim 4, wherein the clamping assembly comprises a plurality of circumferentially distributed clamping rods, the clamping rods are connected to the supporting plate, and steps for placing the wafer are arranged on the clamping rods.
8. The dry etching apparatus for a probe according to claim 7, the number of the steps is at least two.
9. The dry etching apparatus for a prober of claim 7, wherein the clamping rods are detachably connected to the supporting plate.
10. The dry etching apparatus for detecting according to claim 1, wherein a plurality of air inlets are disposed in the etching chamber, and are circumferentially disposed in the etching chamber, and the plurality of air inlets are communicated with the air inlet box.
CN202111290568.8A 2021-11-02 2021-11-02 Dry etching device for detector Pending CN114023687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111290568.8A CN114023687A (en) 2021-11-02 2021-11-02 Dry etching device for detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111290568.8A CN114023687A (en) 2021-11-02 2021-11-02 Dry etching device for detector

Publications (1)

Publication Number Publication Date
CN114023687A true CN114023687A (en) 2022-02-08

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ID=80059874

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111290568.8A Pending CN114023687A (en) 2021-11-02 2021-11-02 Dry etching device for detector

Country Status (1)

Country Link
CN (1) CN114023687A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116532813A (en) * 2023-06-27 2023-08-04 天津力矩自动化科技有限公司 Laser etching machine tool for workpiece machining

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116532813A (en) * 2023-06-27 2023-08-04 天津力矩自动化科技有限公司 Laser etching machine tool for workpiece machining
CN116532813B (en) * 2023-06-27 2023-09-19 天津力矩自动化科技有限公司 Laser etching machine tool for workpiece machining

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