JPS6214128B2 - - Google Patents

Info

Publication number
JPS6214128B2
JPS6214128B2 JP8190179A JP8190179A JPS6214128B2 JP S6214128 B2 JPS6214128 B2 JP S6214128B2 JP 8190179 A JP8190179 A JP 8190179A JP 8190179 A JP8190179 A JP 8190179A JP S6214128 B2 JPS6214128 B2 JP S6214128B2
Authority
JP
Japan
Prior art keywords
transistor
resistor
pnp transistor
collector
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8190179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS566520A (en
Inventor
Teruo Inuzuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP8190179A priority Critical patent/JPS566520A/ja
Publication of JPS566520A publication Critical patent/JPS566520A/ja
Publication of JPS6214128B2 publication Critical patent/JPS6214128B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H03K3/352—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region the devices being thyristors
    • H03K3/3525—Anode gate thyristors or programmable unijunction transistors

Landscapes

  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Bipolar Integrated Circuits (AREA)
JP8190179A 1979-06-28 1979-06-28 Oscillating device Granted JPS566520A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8190179A JPS566520A (en) 1979-06-28 1979-06-28 Oscillating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8190179A JPS566520A (en) 1979-06-28 1979-06-28 Oscillating device

Publications (2)

Publication Number Publication Date
JPS566520A JPS566520A (en) 1981-01-23
JPS6214128B2 true JPS6214128B2 (ko) 1987-03-31

Family

ID=13759335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8190179A Granted JPS566520A (en) 1979-06-28 1979-06-28 Oscillating device

Country Status (1)

Country Link
JP (1) JPS566520A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3429981A1 (de) * 1984-08-16 1986-03-06 GNS Gesellschaft für Nuklear-Service mbH, 4300 Essen Verfahren fuer die vorbereitung von radioaktiven und/oder radioaktiv verseuchten abfallfeststoffen und verdampferkonzentraten fuer die endlagerung in endlagerbehaeltern
JPH0641605Y2 (ja) * 1988-09-16 1994-11-02 神鋼パンテック株式会社 薄膜蒸発装置
JP5032378B2 (ja) * 2008-03-31 2012-09-26 セイコーインスツル株式会社 充放電制御回路及びバッテリ装置

Also Published As

Publication number Publication date
JPS566520A (en) 1981-01-23

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