JPS62135461U - - Google Patents

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Publication number
JPS62135461U
JPS62135461U JP2352386U JP2352386U JPS62135461U JP S62135461 U JPS62135461 U JP S62135461U JP 2352386 U JP2352386 U JP 2352386U JP 2352386 U JP2352386 U JP 2352386U JP S62135461 U JPS62135461 U JP S62135461U
Authority
JP
Japan
Prior art keywords
layer
cladding layer
laminated
cladding
layer laminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2352386U
Other languages
English (en)
Other versions
JPH0513021Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986023523U priority Critical patent/JPH0513021Y2/ja
Publication of JPS62135461U publication Critical patent/JPS62135461U/ja
Application granted granted Critical
Publication of JPH0513021Y2 publication Critical patent/JPH0513021Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【図面の簡単な説明】
第１図及び第２図は本考案の実施例を示す斜視
断面図、第３図はＡｕ層の層厚と光反射率及び光
透過率との関係を示す特性図、第４図は従来例を
示す斜視断面図である。 １……半導体基板、３……連通孔、４……第１
クラツド層、５……活性層、６……第２クラツド
層、８……絶縁層、９……第１電極（金属層）、
１３……（第２の）Ａｕ層。

Claims (1)

  1. 【実用新案登録請求の範囲】 一主面から他主面に達する連通孔を有する半導
    体基板、該基板の一主面上に積層された第１クラ
    ツド層、該第１クラツド層上に積層され斯る第１
    クラツド層より光屈折率が大でバンドギヤツプエ
    ネルギーが小なる活性層、該活性層上に積層され
    上記第１クラツド層と同等の光屈折率及びバンド
    ギヤツプエネルギーを有する第２クラツド層、上
    記連通孔直上の上記第２クラツド層側表面をリン
    グ状に露出させるベく上記第２クラツド層上に積
    層された絶縁層、該絶縁層及び上記第２クラツド
    層上に積層された金属層を有する面発光半導体レ
    ーザにおいて、 上記リング内の絶縁層上に積層される金属層は
    層厚５００〜８００ÅのＡｕ層としたことを特徴
    とする面発光半導体レーザ。
JP1986023523U 1986-02-20 1986-02-20 Expired - Lifetime JPH0513021Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986023523U JPH0513021Y2 (ja) 1986-02-20 1986-02-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986023523U JPH0513021Y2 (ja) 1986-02-20 1986-02-20

Publications (2)

Publication Number Publication Date
JPS62135461U true JPS62135461U (ja) 1987-08-26
JPH0513021Y2 JPH0513021Y2 (ja) 1993-04-06

Family

ID=30821902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986023523U Expired - Lifetime JPH0513021Y2 (ja) 1986-02-20 1986-02-20

Country Status (1)

Country Link
JP (1) JPH0513021Y2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133539A (ja) * 2001-06-28 2003-05-09 Trw Inc アモルファスシリコン送信及び受信構造とＧａＡｓまたはＩｎＰ加工済み装置との集積化

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5934687A (ja) * 1982-08-20 1984-02-25 Res Dev Corp Of Japan 面発光半導体レ−ザ
JPS5979591A (ja) * 1982-10-29 1984-05-08 Fujitsu Ltd 半導体発光装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5934687A (ja) * 1982-08-20 1984-02-25 Res Dev Corp Of Japan 面発光半導体レ−ザ
JPS5979591A (ja) * 1982-10-29 1984-05-08 Fujitsu Ltd 半導体発光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003133539A (ja) * 2001-06-28 2003-05-09 Trw Inc アモルファスシリコン送信及び受信構造とＧａＡｓまたはＩｎＰ加工済み装置との集積化

Also Published As

Publication number Publication date
JPH0513021Y2 (ja) 1993-04-06

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