JPS62133723A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To facilitate the processing of polyimide resin to shape it finely and steeply, by etching an insulation film, forming a pattern, wet etching a part of the polyimide layer and dry etching the polyimide resin to remove it. CONSTITUTION:A polyimide resin layer 2 is formed on a semiconductor substrate 1, and an insulation film 3 is formed on the polyimide layer 2. Photoresist 4 is applied thereon and a pattern is formed. The insulation film 3 is removed according to the shape of the pattern. The resin layer 2, masked with the resist 4, is etched with a hydrazine etchant to remove a part thereof. The resin layer 2 is then dry etched and removed with the insulation layer 2 used as a mask. After that, the insulation film 3 is removed. In this manner, the polyimide can be processed easily to shape it finely and steeply.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for processing a polyimide resin film used as an interlayer insulating film for wiring having a multilayer structure. .

[Conventional technology]

Conventionally, this type of polyimide resin processing involves forming a polyimide resin layer 2 on the surface of a semiconductor substrate 1, as shown in FIG. 3 (al), and then applying photoresist four times as shown in FIG. Then, as shown in FIG. 3 (tel), the polyimide resin layer 2f is removed using a hydrazine etchant, and then, as shown in FIG. 3 (dl), the photoresist 4 is removed. Ta.

[Problem that the invention seeks to solve]

The conventional processing of polyimide resin described above involves applying a photoresist onto the polyimide resin layer, forming a pattern, and then performing wet etching, which has the disadvantage that it is difficult to form a steep pattern.

[Means for solving problems]

The polyimide resin processing of the present invention includes a step of forming a polyimide resin layer on a semiconductor substrate, a step of forming an insulating film on the polyimide resin layer, a step of applying a photoresist on the insulating film and forming a pattern, The process of removing the insulating film and the use of polyimide resin as a photoresist mask
The process involves removing a portion of the polyimide resin layer by wet etching, using the insulating film as a mask to remove the polyimide resin layer by dry etching, and removing the entire insulating film.

〔Example〕

The non-invention will be briefly explained with reference to the drawings.

FIG. 1 is a sectional view of an embodiment of the present invention. 1 is a semiconductor substrate, and 2 is a polyimide resin layer. This is shown in Figure 2 (a
It is formed as shown in FIG. 1 to 181 in FIG. Suna VS
, First, as shown in FIG. 2 (al), a polyimide resin layer 2 is formed on a semiconductor substrate l, three insulating films are formed on the polyimide resin layer 2, four coats of photoresist are applied, and the entire pattern is formed. Next, as shown in FIG. 2 181, the insulating film 3 is removed in a pattern. Thereafter, as shown in FIG. Next, the polyimide resin layer 3 is removed by dry etching using the insulating film 3 as a mask, and then the insulating film 3 is removed to obtain the structure shown in FIG.

〔Effect of the invention〕

The invention described above involves forming a polyimide resin layer on a semiconductor substrate, forming an insulating film on the polyimide resin layer, forming a pattern with photoresist, etching the insulating film, forming the pattern, and wet-processing. Part of the polyimide resin layer is etched with one shot, and then with dry etching,
By removing the insulating film after dropping the polyimide resin layer as a mask for the entire insulating film, the entire insulating film pattern can be used to process the polyimide, resulting in the effect of allowing fine and steep processing of the polyimide resin.

[Brief explanation of drawings]

Fig. 1 is a sectional view after polyimide resin processing showing an embodiment of the invention, Fig. 2 is a sectional view of each process for forming the structure shown in Fig. ~(d
1 is a process sectional view of a conventional example. 1...Semiconductor substrate, 2...Polyimide resin layer, 3...Insulating film, 4...Photoresist. Figure 1 $ 2 Figure 2 Closed Figure 3 $3T11J

Claims (1)

[Claims] A step of forming a polyimide resin layer on a semiconductor substrate, a step of forming an insulating film on the polyimide resin layer, a step of applying a photoresist on the insulating film, forming a pattern, and removing the insulating film. , a step of partially removing the polyimide resin layer by wet etching using the remaining insulating film as a mask, a step of removing the polyimide resin layer by dry etching, and a step of removing the insulating film. A method for manufacturing a semiconductor device.