JPS62126650A - Holding apparatus - Google Patents

Holding apparatus

Info

Publication number
JPS62126650A
JPS62126650A JP26601285A JP26601285A JPS62126650A JP S62126650 A JPS62126650 A JP S62126650A JP 26601285 A JP26601285 A JP 26601285A JP 26601285 A JP26601285 A JP 26601285A JP S62126650 A JPS62126650 A JP S62126650A
Authority
JP
Japan
Prior art keywords
wafer
holding surface
holding
thin plate
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26601285A
Other languages
Japanese (ja)
Inventor
Narikazu Suzuki
鈴木 成和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP26601285A priority Critical patent/JPS62126650A/en
Publication of JPS62126650A publication Critical patent/JPS62126650A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To separate a thin plate from a holding surface, to avoid application of local pressure on the thin plate and to prevent breakdown of the thin plate, by applying static pressure to the thin plate, which is held by the holding surface so that it is freely attached and removed, and applying fluid pressure on the side of the holding surface. CONSTITUTION:When cutting is finished, a supporting plate 16 is turned in the direction of an arrow 23b under the state a wafer 1 is held by vacuum sucking. Positioning is performed so that a sealing body 17 becomes approximately coaxial with a holding board 5. Then the holding plate 16 is lowered in the direction of an arrow 22a, and a packing 19 is closely contacted with a holding surface 4. Then a water source 33 is operated, and water is fed to a sealed space 25, so as to fill the sealed space with the water and to compress the inside at a constant pressure. Then, on the entire surface of the wafer 1, which is sucked with vacuum, static pressure, i.e., constant pressure, is uniformly applied. A selector valve 13 is changed, and a compressed air source 15 is actuated, so that compressed air is jetted through air pipes 9.... Then wafer 1 is separated from the holding surface with air pressure. At this time, since the static pressure is applied to the wafer 1, the wafer 1 is slowly separated from the outer part.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、とくに厚さが500μm以下のシリコン(S
t)ウェーハの保持に好適する保持装置に関する。
Detailed Description of the Invention [Technical Field of the Invention] The present invention particularly relates to silicon (S) having a thickness of 500 μm or less.
t) A holding device suitable for holding a wafer.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

一般に、半導体装置の素材として用いられる薄片状のウ
ェーハは、その裏面を梨地状に研削加工されている。こ
の裏面研削は、ウェー71をテーブル上に載置し、テー
ブルのウエーノ・保持面に開口する吸引口を介して真空
吸着し、所定の研削加工を行っている。しかして、裏面
が梨地状に研削されたウェーハは、真空吸引を解除した
のち、上記吸引口より水または圧縮空気を吹き出すこと
によす、ウェーノ・をテーブルのウエーノ・保持面から
剥離する。
Generally, the back surface of a thin wafer used as a material for semiconductor devices is ground into a matte finish. This back surface grinding is performed by placing the wafer 71 on a table, vacuum suctioning it through a suction port opened on the wafer/holding surface of the table, and performing a predetermined grinding process. After the vacuum suction is released from the wafer whose back surface has been ground to a matte finish, the wafer is peeled off from the wafer holding surface of the table by blowing out water or compressed air from the suction port.

しかるに、ウェーハの厚さが約500μm以上であれば
、水または圧縮空気の加圧により、ウエーノ・保持面か
ら剥離する際に1割れや欠けなどの損傷をきたすことは
なかった。しかしながら、 D−RAM素材は、200
μm以下の仕上り厚さが必要である。
However, if the wafer had a thickness of approximately 500 μm or more, no damage such as cracks or chips would occur when the wafer was peeled from the wafer/holding surface due to water or compressed air pressure. However, the D-RAM material is 200
A finished thickness of less than μm is required.

このような薄いウェーハの裏面研削では、研削後に、ウ
ェーハ保持面からウェーハを剥離する際に付加される空
気圧、水圧等により割れや欠けなどの破損を生じてしま
う。
In back grinding of such a thin wafer, damage such as cracking or chipping may occur due to air pressure, water pressure, etc. applied when the wafer is peeled off from the wafer holding surface after grinding.

〔発明の目的〕[Purpose of the invention]

本発明は、上記事情を勘案してなされたもので。 The present invention has been made in consideration of the above circumstances.

ウェーハを保持面から剥離する際に破損を生じることの
ない保持装置を提供することを目的とする。
It is an object of the present invention to provide a holding device that does not cause damage when peeling a wafer from a holding surface.

〔発明の概要〕[Summary of the invention]

保持面に着脱自在に保持されている薄板に静圧を付加し
ながら、保持面側に流体圧を付加することにより、薄板
を保持面から剥離させるよう:どしたものである。
The thin plate is separated from the holding surface by applying static pressure to the thin plate detachably held on the holding surface and applying fluid pressure to the holding surface side.

〔発明の実施例〕[Embodiments of the invention]

以下1本発明の一実施例を図面を参照して詳述する。 An embodiment of the present invention will be described below in detail with reference to the drawings.

第1図及び第2図は、この実施例の保持装置を示してい
る。この保持装置は、ウェー/1(1)の着脱を行うウ
ェーハ吸着部(2)と、このウェーハ吸着部(2)に保
持されているウェーノ(1)に静圧を付加する静圧付加
部(3)とからなっている。しかして、ウェーハ吸着部
(2)は、ウェーノ1(1)が直接保持される保持面(
4)を有する円盤状の保持盤(5)と、この保持盤(5
)が上部に内嵌して保持固定され基台(6)に固設され
た円柱状の支持台(7)と、上記保持面にてウェーハ(
1)を真空吸着するとともにウェーハ(1)を保持面(
4)から剥離させるために圧縮空気を噴出させるウェー
ハ潴脱機構(8)とからなっている。上記保持盤(5)
には、一端部が保持面(4)に開口し他端部が下端面に
開口する透孔をなす空気孔(9)・・・が、同心円状か
つ放射状に複数個穿設されている。また、支持台(7)
の保持盤(5)が嵌着されている凹部(10)の内底面
には、空気孔(9)・・・の下端部間口位置に対応して
1 and 2 show the holding device of this embodiment. This holding device consists of a wafer suction unit (2) that attaches and detaches the wafer/1 (1), and a static pressure applying unit (2) that applies static pressure to the wafer (1) held by the wafer suction unit (2). 3) It consists of. Therefore, the wafer suction part (2) has a holding surface (on which the wafer 1 (1) is directly held) (
4) and a disc-shaped holding plate (5) having the holding plate (5).
) is fitted into the upper part to hold and fix the wafer (
1) is vacuum-adsorbed and the wafer (1) is placed on the holding surface (
4) and a wafer removal mechanism (8) that blows out compressed air to separate the wafer from the wafer. The above holding plate (5)
A plurality of air holes (9) are concentrically and radially formed in the holding surface (4) at one end and opening at the lower end surface at the other end. Also, the support stand (7)
The inner bottom surface of the recess (10) into which the holding plate (5) is fitted corresponds to the opening position of the lower end of the air hole (9).

これら空気孔(9)・・・と連通ずるように円環溝及び
放射溝からなる溝圓・・・が刻設されている。さらに。
Grooves consisting of annular grooves and radial grooves are carved so as to communicate with these air holes (9). moreover.

保持盤(5)には、一端部が溝(11)・・・の中央部
に開口し。
The holding plate (5) has one end opening in the center of the groove (11).

他端部が支持台(力の側面に開口するL字状の通気孔0
4が穿設されている。しかして、ウェーノ・着脱機構(
8)は、一端部が、支持台(力の側面に開口している通
気孔(1のに接続され他端部が切換弁α3に接続されて
いる空気管(gFL>と、上記切換弁(131に接続さ
れ脱気によりウェーハ(1)を真空吸着するための真空
源(14Jと、同じくこの真空源(14)と並列に切換
弁a3に接続され給気Jこよりウェーハ(1)の真空吸
着を解除するための圧縮空気源08とバらなっている。
The other end is a support base (an L-shaped ventilation hole that opens on the side of the force)
4 is drilled. However, the Weno attachment/detachment mechanism (
8) has an air pipe (gFL>) whose one end is connected to the ventilation hole (1) which is open on the side of the support base (force) and whose other end is connected to the switching valve α3; A vacuum source (14J) is connected to 131 for vacuum suction of the wafer (1) by degassing, and a vacuum source (14J) is also connected to the switching valve a3 in parallel with this vacuum source (14) and is connected to the air supply J for vacuum suction of the wafer (1). It is separate from the compressed air source 08 for releasing the.

一方。on the other hand.

静圧付加部(31は、保持盤(5)とほぼ等径の円板状
の支持板f[Dと、この支持板tteの下面に同軸に固
定された下方に開口する有底円筒状の密封体aηと、こ
の密封体07)の円環状側壁端の下端面に接着された例
えばシリコーンゴムM+円環状をなすパラキジOIと、
支持板(1eを一端部に取付けられたアーム(イ)と、
このアーム(イ)が水平方向になるようにアーム翰の他
端部が支持された円柱状の支柱01)と、この支柱(2
0を上下方向(矢印(22a)、 (22b)方向)に
昇降駆動させるとともに矢印(23a)、 (23b)
方向ζこ正逆回転駆動させる駆動機構(財)と、密封体
θDと保持m(41とにより形成される密封空間(ハ)
に給水する1水機構(ハ)とからなっている。しかして
、密封体面の直径は、保持盤(5)の直径よりもわずか
番こ小さく設定されている。また、密封体a7)の底板
罰には透孔(至)・・・が均一に分散して穿設されてい
る。さらに。
The static pressure application part (31) consists of a disk-shaped support plate f[D having approximately the same diameter as the holding plate (5), and a bottomed cylindrical support plate fixed coaxially to the lower surface of the support plate tte. A sealing body aη, for example, silicone rubber M + a ring-shaped Parakiji OI bonded to the lower end surface of the annular side wall end of the sealing body 07),
An arm (A) with a support plate (1e attached to one end),
A cylindrical support 01) with the other end of the arm supported so that this arm (A) is oriented horizontally, and this support (2)
0 in the vertical direction (in the directions of arrows (22a) and (22b)), as well as in the directions of arrows (23a) and (23b).
A sealed space (c) formed by a drive mechanism (goods) that rotates forward and backward in the direction ζ, a sealed body θD, and a holding m (41).
It consists of a water mechanism (c) that supplies water to the Therefore, the diameter of the sealing body surface is set to be slightly smaller than the diameter of the holding plate (5). In addition, through holes are evenly distributed in the bottom plate of the sealing body a7). moreover.

支持板(leの下面には1円板状の凹部−が凹設され。A disc-shaped recess is provided on the lower surface of the support plate (le).

透孔C2〜・・・の上端部が連通ずるようになっている
The upper ends of the through holes C2 to C2 are arranged to communicate with each other.

また、支持板Oe中央部には、一端が四部−に開口する
透孔(至)が同軸に穿設されている。他方、給水機構(
ハ)は、透孔(至)の上端部に接続された注水具0])
と、この注水具6υに一端部が接続された可撓れの給水
管02と、この給水管G邊の他端部が接続され密封空間
(ハ)にウェーノー(10こ静圧を付加するための水を
供給する給水源(ハ)とからなっている。
Further, a through hole (to) with one end opening in four parts is coaxially bored in the center of the support plate Oe. On the other hand, the water supply mechanism (
C) is a water injection device connected to the upper end of the through hole (0])
A flexible water supply pipe 02, one end of which is connected to this water injection tool 6υ, and the other end of this water supply pipe G are connected to the sealed space (c) to apply a static pressure of 10 It consists of a water supply source (c) that supplies water.

つぎに、上記構成の保持装置の作動について述べる。Next, the operation of the holding device configured as described above will be described.

まず、駆動機構(2優により支持板(I6)を矢印(2
3b)方向に回動させる。つぎに、保持面(4)上にウ
ェーハ(1)を裏面を上にして載置する。ついで、真空
源a4を作動させ、切換弁(131空気管0荀6通気孔
0)。
First, move the support plate (I6) with the arrow (2) using the drive mechanism (2).
3b) Rotate in the direction. Next, the wafer (1) is placed on the holding surface (4) with its back side facing up. Next, operate the vacuum source A4 and open the switching valve (131 air pipe 0 x 6 vent 0).

溝(11)・・・および空気孔(9)・・・を介して脱
気することにより、ウェーノ(1)を真空吸着し、保持
面(4)に固着する。しかして1図示せぬ研削機構によ
り、ウェーハ(1)の裏面を梨地状に研削する。ついで
、この研削加工が終了すると、ウェーハ(1)の真空吸
着を保持したままの状態で、支持板+[9を矢印(23
&)方向に回動させ、密封体aηが保持盤(5)とほぼ
同軸となるように位置決めする。つぎに、支持板06)
を矢印(22a)方向に下降させ、パツキン(11を保
持面(4)に密着させる。しかして、給水源13階を作
動させ。
By degassing through the grooves (11) and the air holes (9), the waeno (1) is vacuum-adsorbed and fixed to the holding surface (4). Then, by a grinding mechanism (not shown), the back surface of the wafer (1) is ground into a matte finish. Then, when this grinding process is completed, while maintaining the vacuum suction of the wafer (1), move the support plate + [9 to the arrow (23).
&) direction, and position it so that the sealing body aη is approximately coaxial with the holding plate (5). Next, support plate 06)
is lowered in the direction of the arrow (22a) to bring the gasket (11) into close contact with the holding surface (4).Thus, the water supply source on the 13th floor is activated.

給水管0渇、注水具01)9通孔(30) 、凹部−お
よび透孔(ハ)・・・を介して、水を密閉空間(2ツに
供給し、この密閉空間ρつに水を充填させるとともに、
一定圧で加圧する。すると、真空吸着されているウェー
ハ(1)には静圧、つまりウェーハ(1)全面に一定の
圧力が均一に作用する。しかして、切換弁0りを切換え
Water is supplied to the closed space (2) through the water supply pipe 0, the water filler 01) 9 through hole (30), the recess and the through hole (c), and the water is supplied to the closed space ρ. Along with filling,
Apply constant pressure. Then, static pressure, that is, a constant pressure, acts uniformly on the entire surface of the wafer (1) that is vacuum-adsorbed. Then, switch the switching valve 0.

圧縮空気源09を作動させて、圧縮空気を、切換弁0階
、空気管0荀5通気孔0′IJおよび溝αυ・・・を介
して空気管(9)・・・から噴出させる。すると、ウェ
ーハ(1)は。
The compressed air source 09 is operated to blow out compressed air from the air pipes (9) through the switching valve 0, the air pipe 05, the ventilation hole 0'IJ, and the groove αυ. Then, wafer (1).

空気圧により保持面(4)から剥離する。このとき。It is peeled off from the holding surface (4) by air pressure. At this time.

ウェーハ(1)には静圧が作用しているので、ウェーハ
(1)は外周部から徐々に剥離する。つまり、ウェーハ
(1)の外周部から水が徐々に浸透し、急激な剥離が生
じることがない。かくして、ウェーハ(1)の保持面(
4)からの剥離作業が完了すると、圧縮空気源(国から
の圧縮空気の供給を停止するとともに。
Since static pressure is acting on the wafer (1), the wafer (1) is gradually peeled off from the outer periphery. In other words, water gradually penetrates from the outer periphery of the wafer (1), and rapid peeling does not occur. Thus, the holding surface of the wafer (1) (
4) Once the stripping work is completed, the compressed air source (as well as stopping the supply of compressed air from the country).

駆動機構(2により支持板0[9を矢印(22b)方向
に上昇させるとともに、矢印(23b)方向lこ回動さ
せる。
The drive mechanism (2) raises the support plate 0[9 in the direction of the arrow (22b) and rotates it in the direction of the arrow (23b).

しかして、研削加工後のウェーハ(1)を回収する。The wafer (1) after the grinding process is then recovered.

以上のように、この実施例の保持装置は、真空吸着され
ているウェーハ(1)を保持面(4)から剥離する際、
静圧を付加するようにしているので、圧縮空気圧がウェ
ーハ(1)に局部的に作用し、無理な剥離が生じること
がないので、ウェーハ(1)が割れたり、欠けたりする
などの破損を防止することがない。また、齋封空間θ最
への給水により研削加工面の洗浄を同時に行うことがで
きる利点を有する。
As described above, the holding device of this embodiment, when peeling the vacuum-adsorbed wafer (1) from the holding surface (4),
Since static pressure is applied, the compressed air pressure acts locally on the wafer (1) and does not cause unreasonable peeling, thereby preventing damage such as cracking or chipping of the wafer (1). There is nothing to prevent. Furthermore, there is an advantage that the grinding surface can be simultaneously cleaned by supplying water to the sealed space θ.

なお、上記実施例においては、密封空間(ハ)へは水を
供給しているが、圧縮空気を供給してウェーハ(1)に
静圧を付加するようにしてもよい。また。
In the above embodiment, water is supplied to the sealed space (C), but compressed air may be supplied to apply static pressure to the wafer (1). Also.

保持面(4)からウェーハ(1)を剥離するための剥離
力として、圧縮空気を利用しているが、加圧水の供給に
より剥離させるようにしてもよい。さらに。
Although compressed air is used as a peeling force for peeling the wafer (1) from the holding surface (4), the peeling may be performed by supplying pressurized water. moreover.

ウェーハ(1)の固着方式として、静電チャック方式の
ものにも本発明を適用できる。
The present invention can also be applied to an electrostatic chuck method for fixing the wafer (1).

〔発明の効果〕〔Effect of the invention〕

本発明の保持装置は、保持面に着脱自在に保持されてい
る薄板に静圧を付加しながら、保持面側に流体圧を付加
することにより、薄板を保持面から剥離させるようにし
ているので、薄板に局所的な圧力が加わることがなくな
り、薄板の破損を防止することができる。したがって1
本発明は。
The holding device of the present invention separates the thin plate from the holding surface by applying static pressure to the thin plate removably held on the holding surface and applying fluid pressure to the holding surface. , local pressure is not applied to the thin plate, and damage to the thin plate can be prevented. Therefore 1
The present invention is.

D −FLAMやC−MOS用の200μm以下のウェ
ーハの保持に適用した場合に顕著な効果を奏する。
When applied to holding wafers of 200 μm or less for D-FLAM and C-MOS, a remarkable effect is produced.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の保持装置の要部を欠切して
示した正面図、第2図は第1図の平面図である。 (1):ウェーハ(薄板)。 (2):ウェーハ吸着部(N板保持部)。 (3):静圧付加部、     (4) :保持面。 (9):空気孔(第lの流体孔)、 Q7+ :密封体
。 (ハ):密封空間、     (ハ):透孔(第2の流
体孔)。 c!1 :四 部。
FIG. 1 is a front view with main parts cut away of a holding device according to an embodiment of the present invention, and FIG. 2 is a plan view of FIG. 1. (1): Wafer (thin plate). (2): Wafer adsorption section (N plate holding section). (3): Static pressure applying part, (4): Holding surface. (9): Air hole (lth fluid hole), Q7+: Sealing body. (C): Sealed space, (C): Through hole (second fluid hole). c! 1: Part 4.

Claims (1)

【特許請求の範囲】[Claims] 薄板が吸着される保持面およびこの保持面に開口する第
1の流体孔を有し上記保持面に上記薄板を着脱自在に吸
着させるとともに上記第1の流体孔から流体を噴出させ
上記保持面に吸着されている薄板を上記保持面から剥離
させる剥離力を付加する薄板保持部と、上記保持面に密
着したとき上記薄板を密封する密封空間を形成する凹部
およびこの凹部に開口する第2の流体孔が形成され上記
保持面に対して相対的に進退自在に設けられた密封体を
有し上記密封空間が形成されたとき上記保持面に吸着さ
れている薄板に静圧をほぼ均一に付加する流体を上記第
2の流体孔を経由して供給する静圧付加部とを具備する
ことを特徴とする保持装置。
The holding surface has a holding surface to which the thin plate is attracted, and a first fluid hole opening in the holding surface, and the thin plate is removably adsorbed on the holding surface, and fluid is ejected from the first fluid hole to the holding surface. A thin plate holding part that applies a peeling force to separate the thin plate being attracted from the holding surface, a recess that forms a sealed space that seals the thin plate when the thin plate is in close contact with the holding surface, and a second fluid that opens into the recess. The sealing body is provided with a hole and is movable relative to the holding surface, and when the sealed space is formed, static pressure is applied almost uniformly to the thin plate adsorbed to the holding surface. A holding device comprising: a static pressure applying section that supplies fluid via the second fluid hole.
JP26601285A 1985-11-28 1985-11-28 Holding apparatus Pending JPS62126650A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26601285A JPS62126650A (en) 1985-11-28 1985-11-28 Holding apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26601285A JPS62126650A (en) 1985-11-28 1985-11-28 Holding apparatus

Publications (1)

Publication Number Publication Date
JPS62126650A true JPS62126650A (en) 1987-06-08

Family

ID=17425145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26601285A Pending JPS62126650A (en) 1985-11-28 1985-11-28 Holding apparatus

Country Status (1)

Country Link
JP (1) JPS62126650A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0950975A (en) * 1995-08-07 1997-02-18 Samsung Electron Co Ltd Wafer grinding device
JP2008110471A (en) * 2006-10-06 2008-05-15 Ebara Corp Substrate polishing device, substrate polishing method, and substrate receiving method
JP2011020215A (en) * 2009-07-15 2011-02-03 Disco Abrasive Syst Ltd Machining apparatus
JP2011124419A (en) * 2009-12-11 2011-06-23 Disco Abrasive Syst Ltd Processing apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0950975A (en) * 1995-08-07 1997-02-18 Samsung Electron Co Ltd Wafer grinding device
JP2008110471A (en) * 2006-10-06 2008-05-15 Ebara Corp Substrate polishing device, substrate polishing method, and substrate receiving method
JP2011020215A (en) * 2009-07-15 2011-02-03 Disco Abrasive Syst Ltd Machining apparatus
JP2011124419A (en) * 2009-12-11 2011-06-23 Disco Abrasive Syst Ltd Processing apparatus

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