JPS62125620A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To obtain the manufacturing method of a semiconductor device in which the size of a semiconductor chip is not limited by an exposed area of an exposure unit by providing the step of contraction-exposing dividing patterns of a photomask on a photoresist film formed on a semiconductor substrate while sequentially disposing adjacently to form the contracted patterns of a predetermined pattern on the photoresist film. CONSTITUTION:When a pattern 1 formed on one semiconductor chip is larger than an exposing range 2 of a contraction projecting exposure unit at a mask side, the pattern is split to form 2 photomasks 3A, 3B to be contained in the range 2. Predetermined portions on a photoresist film 6 formed on a silicon substrate 4 is repeatedly exposed with the photomask 3A to form exposure patterns 5A, and adjacent portions of the patterns 5A are repeatedly exposed with the photomask 3B to form exposure patterns 5B. Accordingly, the patterns 5A exposed by the photomask 3A and the exposure patterns 5B exposed by the photomask 3B are connected on the substrate 4 to form one pattern. Thus, many functions are provided on the chip, and a limit in size of the chip can be eliminated in the step of designing a semiconductor device.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a method for manufacturing a semiconductor device.

[Prior Art] As the degree of integration of semiconductor integrated circuits improves, internal patterns become finer and semiconductor chips become larger.

In order to form a fine pattern of resists 1 to 1 on a semiconductor substrate, an exposure device with high resolution is essential. Currently, the most commonly used exposure equipment is the photo mask.
The second pattern is reduced and projected onto 17'5, and photoresist 1~
This is a reduction projection type exposure device that exposes a film.

This reduction projection type exposure apparatus has an exposure area of about 15 mm x 15+*m in one exposure. For this reason, if the lens is made larger in order to increase the exposure area, the distortion of the tongue becomes large and the positional accuracy of the exposure pattern deteriorates. Therefore, it is difficult to increase the exposure area of the reduction projection type exposure apparatus to a greater extent than it currently is.

1. Problems to be Solved by the Invention: 1 The size of semiconductor chips is currently larger than 10+s+++ on a side, and the size of semiconductor chips is expected to continue to increase in the future.

Therefore, when manufacturing semiconductor devices using a reduction projection exposure system, the size of the semiconductor chip is limited to the exposed area, as long as one chip or multiple chips are exposed in one exposure as in the past. There is a problem that it can be done.

An object of the present invention is to provide a method for manufacturing a semiconductor device in which the size of a semiconductor chip is not limited by the exposure area of an exposure device.

1. Means for Solving the Problems] The method for manufacturing a semiconductor device of the present invention includes the steps of dividing a predetermined pattern into a plurality of parts and forming a mask for each divided pattern; The pattern of the photomask is sequentially adjacent to the holes formed on the holes 1 through 1 through the resist 1 through the film 7 and reduced exposure is carried out to form a reduced pattern of the predetermined pattern described in 1f on the film 7. The method includes the step of:

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

Fig. 1 shows a pattern used in one embodiment of the present invention;
The figure shows a plane of two masks formed by dividing the pattern shown in FIG. 1 into two. Note that the pattern area 1A is shaded for ease of viewing.

As shown in FIG. 1, if the pattern 1 formed on one V-conductor chip is larger than the exposure range 2 on the mask side of the reduction projection exposure device, the pattern is divided into two and the exposure range 2 is Two photomasks 3A and 3B are formed and used for exposure. Figures 3 (a,) and 3 (b) are plan views of a silicon substrate shown in the order of manufacturing steps to explain an embodiment of the present invention. It is.

First, as shown in FIG.
Exposure patterns 5A are formed by repeatedly performing exposure using the photomask 3A shown in the figure.

Next, as shown in FIG. 3 (1)), go to the mask 3B.
Adjacent portions of the exposure pattern 5A are repeatedly exposed using the exposure pattern 5A to form an exposure pattern 5+3.

By exposing in this manner, the exposure pattern 5Δ exposed by the photomask 38 and the exposure pattern 5B exposed by the photomask 3B are connected to each other on the silicon substrate 4 to form one pattern.

This is the same as the pattern 1 shown in FIG. 1 which is subjected to reduction projection exposure onto the silicon substrate 4.

In this way, in this embodiment, if 1: is used, the maximum exposure range of the reduction projection exposure apparatus, which was possible with the conventional method of exposing one semiconductor chip pattern in one exposure, was set. Exposure of large patterns becomes possible.

In addition, in Example 2, the case was explained in which the original pattern 1 was divided into two to form two PO 1-masks, and the pattern was exposed in two exposures. It goes without saying that the division is not limited to two, but may be three or more, and the size and shape of the division may be any size as long as it falls within the maximum exposure range. 1. Effects of the Invention As explained above, the present invention By exposing the pattern 1-) using two or more photomasks, a large-sized semiconductor chip pattern can be formed, so one semiconductor chip can have more functions. This also has the effect of eliminating restrictions on the size of semiconductor chips at the design stage of semiconductor devices.

[Brief explanation of drawings]

Fig. 1 shows a pattern used in one embodiment of the present invention;
The figure is a plan view of two photomasks formed by dividing the pattern shown in FIG. FIG. 3 is a plan view of a silicon substrate shown in order of steps. 1...Pattern, 2...Exposure range, 3A, 3B...Mask to point 1, 4...Silicon substrate, 5A, 5B...
Exposure pattern, 6. Potregis 1-film.

Claims (1)

[Claims] a step of dividing a predetermined pattern into a plurality of parts and forming a photomask for each divided pattern; and reducing and exposing the photomask patterns while sequentially adjoining them on a photoresist film formed on a semiconductor substrate to form the predetermined pattern. A method for manufacturing a semiconductor device, comprising the step of forming a reduced pattern of on the photoresist film.