JPS6212154A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS6212154A JPS6212154A JP60150160A JP15016085A JPS6212154A JP S6212154 A JPS6212154 A JP S6212154A JP 60150160 A JP60150160 A JP 60150160A JP 15016085 A JP15016085 A JP 15016085A JP S6212154 A JPS6212154 A JP S6212154A
- Authority
- JP
- Japan
- Prior art keywords
- light
- solid
- photosensitive
- section
- light shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 claims description 17
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 239000006185 dispersion Substances 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- LKJPSUCKSLORMF-UHFFFAOYSA-N Monolinuron Chemical compound CON(C)C(=O)NC1=CC=C(Cl)C=C1 LKJPSUCKSLORMF-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は固体撮像装置に関し、特に非感光部に入射する
光を有効に利用するのに好適な固体撮像装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a solid-state imaging device, and particularly to a solid-state imaging device suitable for effectively utilizing light incident on a non-photosensitive portion.
固体撮像装置において入射光を有効利用するために、従
来、特開昭55−138979号や特開昭59−004
67号に記載されているように、各画素に対応した非焦
点集光器アレイや凸形集光レンズを設けることが考えら
れていた。第1図(a)(b)it従来技術を示したも
のである・第1図(a)は・入射光1を凸形レンズ2で
感光部7に集光することニヨり入射上を有効利用するも
のである。ここで、符号3,4はSin、膜、5はSi
基板、6は遮光膜である。第1図(b)は、遮光部に入
射してきた光1を集光器8により反射して感光部7に集
めることにより入射光を有効利用するものである。In order to effectively utilize incident light in a solid-state imaging device, conventionally, Japanese Patent Application Laid-Open No. 55-138979 and Japanese Patent Application Laid-open No. 59-004 have been proposed.
As described in No. 67, it has been considered to provide a non-focus condenser array or a convex condenser lens corresponding to each pixel. Figures 1 (a) and (b) show the prior art. Figure 1 (a) shows that the incident light 1 is condensed onto the photosensitive section 7 by the convex lens 2, which effectively reduces the incidence of the incident light. It is something to be used. Here, numerals 3 and 4 are Sin, film, and 5 is Si.
The substrate 6 is a light shielding film. In FIG. 1(b), the incident light is effectively utilized by reflecting the light 1 incident on the light shielding part by a condenser 8 and concentrating it on the photosensitive part 7. In FIG.
しかしながら、下記の点については配慮されてはいなか
った。たとえば、第1図(a)凸形レンズを利用する場
合、樹脂等によりレンズを構成するがこの技術は固体撮
像装置特有の新しい技術であり、レンズ形成の困難さや
簡単化について配慮されていなかった。また、感光部7
に対応してレンズを設けているため、隣り合うレンズが
遮光部上で接している。この接点付近でレンズの形状は
変化しやすいため、この部分に入射してきた光の屈折後
の方向が画素ごとにばらつき、感度ばらつきが発生する
がこの点について配慮されていなかつた。また、第1図
(b)の集光器8を利用する場合、このような形状の集
光器を形成する際の困難さについて配慮されていなかっ
た。However, the following points were not considered. For example, when using a convex lens in Figure 1 (a), the lens is constructed from resin, etc., but this technology is a new technology unique to solid-state imaging devices, and no consideration has been given to the difficulty or simplification of lens formation. . In addition, the photosensitive section 7
Since the lenses are provided correspondingly, adjacent lenses are in contact with each other on the light shielding part. Since the shape of the lens tends to change near this contact point, the direction of the refraction of light incident on this area varies from pixel to pixel, resulting in variations in sensitivity, but this point has not been taken into consideration. Further, when using the condenser 8 shown in FIG. 1(b), no consideration was given to the difficulty in forming a condenser having such a shape.
本発明の目的は遮光部に入射する光の有効利用を容易に
また感度ばらつき等の問題なく行なえる固体撮像装置を
提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a solid-state imaging device that can easily utilize light incident on a light-shielding portion effectively and without problems such as variations in sensitivity.
本発明は、遮光部上のレンズ形状ばらつきによる画素ご
との感度むらや形状の困難室をなくすために、遮光部上
にレンズを形成するものであり。According to the present invention, a lens is formed on a light shielding part in order to eliminate unevenness in sensitivity from pixel to pixel due to variations in the shape of the lens on the light shielding part, and to eliminate difficult-shaped chambers.
その形成手段はS i O,膜3をエツチングするなど
の技術を用いることにより達成することができる。The formation means can be achieved by using techniques such as etching the SiO film 3.
以下、本発明の一実施例を第2図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
第2図は、本発明の一実施例を示す固体撮像装置の断面
図である。本実施例では、遮光部6上に凹レンズ9を設
けている。本実施例によれば、遮光部6上に入射する光
1を凹形レンズ9により感光部7に集光し、有効利用で
きる。また本実施例によれば、遮光部6上でレンズ2同
士が接しレンズ形状が変化することによる感度ばらつき
は発生しない。FIG. 2 is a sectional view of a solid-state imaging device showing an embodiment of the present invention. In this embodiment, a concave lens 9 is provided on the light shielding part 6. According to this embodiment, the light 1 incident on the light shielding part 6 is focused on the photosensitive part 7 by the concave lens 9, and can be used effectively. Further, according to this embodiment, sensitivity variations do not occur due to changes in lens shape due to the lenses 2 coming into contact with each other on the light shielding portion 6.
第3図(a)(b)は、第2図に示すレンズ9を形成す
る工程の一例を示したものである。初めに第3図(a)
に示すように、感光部7をフォトレジスト10が被うよ
うに選択的に形成する。次にS i O,膜3をウェッ
トエツチングし、第3図(b)に示す凹形レンズ9を形
成する。このように本実施例によれば、レンズ形成は容
易に行うことができる。3(a) and 3(b) show an example of a process for forming the lens 9 shown in FIG. 2. FIG. First, Figure 3 (a)
As shown in FIG. 2, the photosensitive portion 7 is selectively formed so as to be covered by the photoresist 10. As shown in FIG. Next, the S i O film 3 is wet-etched to form a concave lens 9 shown in FIG. 3(b). As described above, according to this embodiment, lens formation can be easily performed.
第4図は、本発明の他の実施例を示す固体撮像装置の断
面図である。第2図に示す実施例と異なる点は、遮光部
6上の凹レンズ11の形状を最適化することにより、遮
光部6上に入射する光1をより有効に利用できるように
したことにある0本実施例において、遮光部6上に入射
する光を感光部7に集光するためには、入射した光を遮
光部6のまん中12で大きく曲げる必要がある。このた
めには入射角θ(0@≦θ≦906)が凹レンズ11の
中心部12である程度以下の小さな値をもつことが必要
となる。第2図に示す実施例では、凹レンズ9の中心部
に入射する光の入射角θはおよそ90″となるためほと
んど曲げられず感光部には集光できない。本実施例では
、ドライエツチング等の技術を用いることにより容易に
、第4図に示すようなレンズ11を作れる0本実施例に
よれば凹レンズの中心部12への光の入射角0をある程
度以下の小さな値とし、凹レンズの中心部に入射する光
をも有効利用できる。FIG. 4 is a sectional view of a solid-state imaging device showing another embodiment of the present invention. The difference from the embodiment shown in FIG. 2 is that by optimizing the shape of the concave lens 11 on the light shielding part 6, the light 1 incident on the light shielding part 6 can be used more effectively. In this embodiment, in order to condense the light incident on the light shielding part 6 onto the photosensitive part 7, it is necessary to bend the incident light significantly at the center 12 of the light shielding part 6. For this purpose, it is necessary that the incident angle θ (0@≦θ≦906) has a small value below a certain level at the center 12 of the concave lens 11. In the embodiment shown in FIG. 2, the incident angle θ of the light incident on the center of the concave lens 9 is approximately 90'', so it is hardly bent and cannot be focused on the photosensitive area. According to this embodiment, the incident angle 0 of light to the center 12 of the concave lens is set to a small value below a certain level, and the lens 11 as shown in FIG. It is also possible to effectively utilize the light that enters the area.
第5図(a)は、本発明の他の実施例を示す固体撮像装
置の断面図である0本実施例が、第2図や第4図に示す
実施例と異なる点は、遮光部14に入射した光の反射を
用いて感光部7に集光することである。遮光部14に入
射した光を遮光部14と反射板15により反射し感光部
7に集光することにより、遮光部の光を利用することが
できる。5in2膜13の形成はテーパーエツチングに
より行うことができる。なお、第5図(b)は第5図(
a)の平面図である。FIG. 5(a) is a cross-sectional view of a solid-state imaging device showing another embodiment of the present invention. This embodiment differs from the embodiments shown in FIGS. 2 and 4 in that the light shielding part 14 This is to condense the light onto the photosensitive section 7 by using the reflection of the light incident thereon. By reflecting the light incident on the light shielding part 14 by the light shielding part 14 and the reflecting plate 15 and focusing it on the photosensitive part 7, the light of the light shielding part can be utilized. The 5in2 film 13 can be formed by taper etching. Note that Fig. 5(b) is similar to Fig. 5(b).
It is a top view of (a).
第6図は、本発明の他の実施例を示す固体撮像装置の断
面図である。本実施例が第5図に示す実施例と異なる点
は、遮光部16を上に凸な形状としたところである0本
実施例においても第5図に示す実施例の場合と同様に、
遮光部に入射した光を有効利用することができる。FIG. 6 is a sectional view of a solid-state imaging device showing another embodiment of the present invention. The difference between this embodiment and the embodiment shown in FIG. 5 is that the light shielding part 16 has an upwardly convex shape. Similarly to the embodiment shown in FIG.
It is possible to effectively utilize the light that has entered the light shielding section.
第7図は、本発明の他の実施例を示す固体撮像装置の断
面図である。本実施例が第5図に示す実施例と異なる点
は5反射板17を下に凸な形状としたところである0本
実施例においては、遮光部6に入射する光1を遮光部6
と反射板17により反射し感光部7に集光できる以外に
、感光部7で反射する光18も反射板17により感光部
7に集光し、遮光部に入射する光を有効利用することが
できる。また、反射板17は第2図に示す実施例の場合
し同様に、容易に形成することができる。FIG. 7 is a sectional view of a solid-state imaging device showing another embodiment of the present invention. This embodiment differs from the embodiment shown in FIG. 5 in that the reflecting plate 17 is shaped downwardly.
In addition to being able to reflect the light 18 by the reflecting plate 17 and focusing it on the photosensitive part 7, the light 18 reflected by the photosensitive part 7 can also be focused on the photosensitive part 7 by the reflecting plate 17, and the light that enters the light shielding part can be effectively used. can. Further, the reflecting plate 17 can be easily formed in the same manner as in the embodiment shown in FIG.
第8図は、本発明の他の実施例を示す固体撮像装置の断
面図である。本実施例が第2図に示す実施例と異なると
ころは、遮光部内4に入射していた光19をも遮光板2
0を設けることにより感光部7に集光できることである
。これにより入射光をより有効に利用できるとともに、
遮光部内4に光が入射することによる偽信号の発生を防
ぐことができる。なお、遮光板20はコントエツチング
と呼ばれる技術により容易に形成できる。FIG. 8 is a sectional view of a solid-state imaging device showing another embodiment of the present invention. The difference between this embodiment and the embodiment shown in FIG.
By providing 0, the light can be focused on the photosensitive section 7. This allows for more effective use of incident light, and
It is possible to prevent false signals from being generated due to light entering the light shielding part 4. Note that the light shielding plate 20 can be easily formed by a technique called contouring.
第9図は1本発明の他の実施例を示す固体撮像装置の断
面図である。本実施例が第2図に示す実施例と異なる点
は、フィルター21上にレンズ9を設けたところである
0本実施例においても第2図に示す実施例と同様に、容
易に形成でき、遮光部に入射した光を有効利用すること
ができる。FIG. 9 is a sectional view of a solid-state imaging device showing another embodiment of the present invention. This embodiment differs from the embodiment shown in FIG. 2 in that a lens 9 is provided on the filter 21. Similarly to the embodiment shown in FIG. The light incident on the part can be effectively used.
第10図は、本発明の他の実施例を示す固体撮像装置の
断面図である6本実施例が第2図に示す実施例と異なる
点は、レンズ9上にフィルター22を設けたところであ
る。本実施例においても第9図に示す実施例の場合と同
様に、容易に形成でき、遮光部に入射した光を有効利用
することができる。またフィルター同士を接さぬよう嬬
することで接点付近でのレンズの形状ばらつき感度むら
をなくすことができる。なおフィルター間に入射した光
はレンズ9により感光部7に集光することができる。10 is a cross-sectional view of a solid-state imaging device showing another embodiment of the present invention. This embodiment differs from the embodiment shown in FIG. 2 in that a filter 22 is provided on the lens 9. . Similarly to the embodiment shown in FIG. 9, this embodiment can be easily formed, and the light incident on the light shielding portion can be effectively utilized. Furthermore, by preventing the filters from touching each other, it is possible to eliminate uneven sensitivity due to lens shape variations near the contact points. Note that the light incident between the filters can be focused on the photosensitive section 7 by the lens 9.
以上にのべた第2図、第4図から第10図に示した実施
例を併用する事により入射光をより有効利用することが
できる。By combining the embodiments shown in FIGS. 2 and 4 to 10 described above, incident light can be used more effectively.
例えば、第11図は、第4図と第8図に示す実施例を組
み合わせた実施例を示す固体撮像装置の断面図である。For example, FIG. 11 is a sectional view of a solid-state imaging device showing an embodiment that combines the embodiments shown in FIGS. 4 and 8.
本実施例においては、第4図と第8図に示す実施例の場
合と同様に、遮光部6J:及び遮光部内4に入射する光
を有効利用でき、また凹レンズ11及び遮光板20は容
易に形成できる。In this embodiment, as in the embodiments shown in FIG. 4 and FIG. Can be formed.
本発明によれば、遮光部に入射した光を有効利用できる
ので、固体撮像素子の感度向上を行うことができる。According to the present invention, since the light incident on the light shielding portion can be effectively used, the sensitivity of the solid-state image sensor can be improved.
第1図は従来技術を説明するための図、第2図は本発明
の実施例を示す図、第4〜11図は本発明の他の実施例
を示す図、第3図は第2図のレンズ形成の工程を示す図
である。
1.19・・・入射光、2・・・凸形レンズ、3,4゜
13・・・SiO2膜、5・・・Si基板、6,14゜
16.20・・・遮光膜、7・・・感光部、8・・・集
光器、9.11・・・凹形レンズ、10・・・フォトレ
ジスト、15.17・・・反射板、18・・・感光部か
らの反射光、d Q
第 b 口
第 7 口 第8 図FIG. 1 is a diagram for explaining the prior art, FIG. 2 is a diagram showing an embodiment of the present invention, FIGS. 4 to 11 are diagrams showing other embodiments of the present invention, and FIG. It is a figure which shows the process of lens formation. 1.19... Incident light, 2... Convex lens, 3,4° 13... SiO2 film, 5... Si substrate, 6,14° 16.20... Light shielding film, 7. ... Photosensitive part, 8... Concentrator, 9.11... Concave lens, 10... Photoresist, 15.17... Reflection plate, 18... Reflected light from photosensitive part, d Q Section b Section 7 Section 8 Figure 8
Claims (1)
む電荷読み出し機構より成る遮光部とを備えた固体撮像
装置において、入射光を感光部に導く手段を前記遮光部
上に設けたことを特徴とする固体撮像装置。 2、特許請求の範囲第1項において、上記遮光部からの
反射光を上記感光部に反射する反射層を有することを特
徴とする固体撮像装置。[Scope of Claims] 1. In a solid-state imaging device comprising a photosensitive section made of a photoelectric conversion element and a light shielding section consisting of a charge readout mechanism including a switch element, means for guiding incident light to the photosensitive section is provided on the light blocking section. A solid-state imaging device characterized by being provided with. 2. A solid-state imaging device according to claim 1, further comprising a reflective layer that reflects light reflected from the light shielding portion to the photosensitive portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60150160A JPS6212154A (en) | 1985-07-10 | 1985-07-10 | Solid-state image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60150160A JPS6212154A (en) | 1985-07-10 | 1985-07-10 | Solid-state image pickup device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6212154A true JPS6212154A (en) | 1987-01-21 |
Family
ID=15490813
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60150160A Pending JPS6212154A (en) | 1985-07-10 | 1985-07-10 | Solid-state image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6212154A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5095211A (en) * | 1990-01-11 | 1992-03-10 | Mitsubishi Denki Kabushiki Kaisha | Infrared image sensor and image pick-up apparatus using the same |
US5172206A (en) * | 1990-07-30 | 1992-12-15 | Kabushiki Kaisha Toshiba | Solid state image pickup device with mirrors |
US5329149A (en) * | 1990-10-12 | 1994-07-12 | Seiko Instruments Inc. | Image sensor with non-light-transmissive layer having photosensing windows |
KR20000003501A (en) * | 1998-06-29 | 2000-01-15 | 김영환 | Image sensor having micro concave lens and manufacturing method thereof |
JP2003092392A (en) * | 2001-09-18 | 2003-03-28 | Canon Inc | Image pickup unit |
-
1985
- 1985-07-10 JP JP60150160A patent/JPS6212154A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5095211A (en) * | 1990-01-11 | 1992-03-10 | Mitsubishi Denki Kabushiki Kaisha | Infrared image sensor and image pick-up apparatus using the same |
US5172206A (en) * | 1990-07-30 | 1992-12-15 | Kabushiki Kaisha Toshiba | Solid state image pickup device with mirrors |
US5329149A (en) * | 1990-10-12 | 1994-07-12 | Seiko Instruments Inc. | Image sensor with non-light-transmissive layer having photosensing windows |
KR20000003501A (en) * | 1998-06-29 | 2000-01-15 | 김영환 | Image sensor having micro concave lens and manufacturing method thereof |
JP2003092392A (en) * | 2001-09-18 | 2003-03-28 | Canon Inc | Image pickup unit |
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