JPS60262458A - Manufacture of solid-state image pickup device - Google Patents
Manufacture of solid-state image pickup deviceInfo
- Publication number
- JPS60262458A JPS60262458A JP59118090A JP11809084A JPS60262458A JP S60262458 A JPS60262458 A JP S60262458A JP 59118090 A JP59118090 A JP 59118090A JP 11809084 A JP11809084 A JP 11809084A JP S60262458 A JPS60262458 A JP S60262458A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photosensor
- surface
- onto
- sensors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Abstract
PURPOSE:To improve the substantial aperture ratio of a photosensor by forming a second transparent inorganic material layer onto the surface of a semiconductor substrate in which a first transparent layer is shaped onto each photosensor. CONSTITUTION:A first transparent layer 3 consisting of an inorganic material is formed onto the surface of an insulating film on the surface of a semiconductor substrate 1 to which a solid-state image pickup device is shaped. The layer 3 is etched selectively so that the layers 3 are left on photosensors 4 to form recessed sections 7 in the layers 3. A second transparent layer 9 composed of an inorganic material is shaped onto the surface of the substrate. Consequently, the layer 9 is protruded on each photosensor vertical row 4, the layer 9 recessed on sections among several adjacent photosensor vertical row 4 is formed, and the projections of the layer 9 are rounded, thus shaping semicylindrical convex lenses 10. As a result, the lenses 10 condense even beams directed toward where displaced to both sides from the sensors 4 to the sensors 4 by beam-condensing functions thereof. Accordingly, the sensitivity of each sensor 4 is improved, and the effective aperture ratios of the sensors 4 can be enhanced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59118090A JPS60262458A (en) | 1984-06-11 | 1984-06-11 | Manufacture of solid-state image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59118090A JPS60262458A (en) | 1984-06-11 | 1984-06-11 | Manufacture of solid-state image pickup device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60262458A true JPS60262458A (en) | 1985-12-25 |
Family
ID=14727744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59118090A Pending JPS60262458A (en) | 1984-06-11 | 1984-06-11 | Manufacture of solid-state image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60262458A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6605851B2 (en) | 2000-11-13 | 2003-08-12 | Samsung Electronics Co., Ltd. | Image sensor with large radius micro-lenses |
US6903395B2 (en) | 2002-02-05 | 2005-06-07 | Sharp Kabushiki Kaisha | Semiconductor device including interlayer lens |
JP2009157397A (en) * | 2009-04-13 | 2009-07-16 | Sony Corp | Method for manufacturing solid image pickup device and solid image pickup device |
US8253142B1 (en) * | 1999-08-27 | 2012-08-28 | Sony Corporation | Solid-state imaging device and method of fabricating the same |
US9030744B2 (en) | 2011-09-19 | 2015-05-12 | Infineon Technologies Ag | Fabrication of micro lenses |
-
1984
- 1984-06-11 JP JP59118090A patent/JPS60262458A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8253142B1 (en) * | 1999-08-27 | 2012-08-28 | Sony Corporation | Solid-state imaging device and method of fabricating the same |
US8729650B2 (en) | 1999-08-27 | 2014-05-20 | Sony Corporation | Solid-state imaging device and method of fabricating the same |
US6605851B2 (en) | 2000-11-13 | 2003-08-12 | Samsung Electronics Co., Ltd. | Image sensor with large radius micro-lenses |
US6933161B2 (en) | 2000-11-13 | 2005-08-23 | Samsung Electronics, Co., Ltd. | Method of forming an image sensor with large radius micro-lenses |
US6903395B2 (en) | 2002-02-05 | 2005-06-07 | Sharp Kabushiki Kaisha | Semiconductor device including interlayer lens |
JP2009157397A (en) * | 2009-04-13 | 2009-07-16 | Sony Corp | Method for manufacturing solid image pickup device and solid image pickup device |
US9030744B2 (en) | 2011-09-19 | 2015-05-12 | Infineon Technologies Ag | Fabrication of micro lenses |
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