JPS60262458A - Manufacture of solid-state image pickup device - Google Patents

Manufacture of solid-state image pickup device

Info

Publication number
JPS60262458A
JPS60262458A JP11809084A JP11809084A JPS60262458A JP S60262458 A JPS60262458 A JP S60262458A JP 11809084 A JP11809084 A JP 11809084A JP 11809084 A JP11809084 A JP 11809084A JP S60262458 A JPS60262458 A JP S60262458A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
photosensor
surface
transparent
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11809084A
Inventor
Hideo Kanbe
Kazuaki Ogawa
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors

Abstract

PURPOSE:To improve the substantial aperture ratio of a photosensor by forming a second transparent inorganic material layer onto the surface of a semiconductor substrate in which a first transparent layer is shaped onto each photosensor. CONSTITUTION:A first transparent layer 3 consisting of an inorganic material is formed onto the surface of an insulating film on the surface of a semiconductor substrate 1 to which a solid-state image pickup device is shaped. The layer 3 is etched selectively so that the layers 3 are left on photosensors 4 to form recessed sections 7 in the layers 3. A second transparent layer 9 composed of an inorganic material is shaped onto the surface of the substrate. Consequently, the layer 9 is protruded on each photosensor vertical row 4, the layer 9 recessed on sections among several adjacent photosensor vertical row 4 is formed, and the projections of the layer 9 are rounded, thus shaping semicylindrical convex lenses 10. As a result, the lenses 10 condense even beams directed toward where displaced to both sides from the sensors 4 to the sensors 4 by beam-condensing functions thereof. Accordingly, the sensitivity of each sensor 4 is improved, and the effective aperture ratios of the sensors 4 can be enhanced.
JP11809084A 1984-06-11 1984-06-11 Manufacture of solid-state image pickup device Pending JPS60262458A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11809084A JPS60262458A (en) 1984-06-11 1984-06-11 Manufacture of solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11809084A JPS60262458A (en) 1984-06-11 1984-06-11 Manufacture of solid-state image pickup device

Publications (1)

Publication Number Publication Date
JPS60262458A true true JPS60262458A (en) 1985-12-25

Family

ID=14727744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11809084A Pending JPS60262458A (en) 1984-06-11 1984-06-11 Manufacture of solid-state image pickup device

Country Status (1)

Country Link
JP (1) JPS60262458A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6605851B2 (en) 2000-11-13 2003-08-12 Samsung Electronics Co., Ltd. Image sensor with large radius micro-lenses
US6903395B2 (en) 2002-02-05 2005-06-07 Sharp Kabushiki Kaisha Semiconductor device including interlayer lens
JP2009157397A (en) * 2009-04-13 2009-07-16 Sony Corp Method for manufacturing solid image pickup device and solid image pickup device
US8253142B1 (en) * 1999-08-27 2012-08-28 Sony Corporation Solid-state imaging device and method of fabricating the same
US9030744B2 (en) 2011-09-19 2015-05-12 Infineon Technologies Ag Fabrication of micro lenses

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8253142B1 (en) * 1999-08-27 2012-08-28 Sony Corporation Solid-state imaging device and method of fabricating the same
US8729650B2 (en) 1999-08-27 2014-05-20 Sony Corporation Solid-state imaging device and method of fabricating the same
US6605851B2 (en) 2000-11-13 2003-08-12 Samsung Electronics Co., Ltd. Image sensor with large radius micro-lenses
US6933161B2 (en) 2000-11-13 2005-08-23 Samsung Electronics, Co., Ltd. Method of forming an image sensor with large radius micro-lenses
US6903395B2 (en) 2002-02-05 2005-06-07 Sharp Kabushiki Kaisha Semiconductor device including interlayer lens
JP2009157397A (en) * 2009-04-13 2009-07-16 Sony Corp Method for manufacturing solid image pickup device and solid image pickup device
US9030744B2 (en) 2011-09-19 2015-05-12 Infineon Technologies Ag Fabrication of micro lenses

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