JPS62120347U - - Google Patents
Info
- Publication number
- JPS62120347U JPS62120347U JP804186U JP804186U JPS62120347U JP S62120347 U JPS62120347 U JP S62120347U JP 804186 U JP804186 U JP 804186U JP 804186 U JP804186 U JP 804186U JP S62120347 U JPS62120347 U JP S62120347U
- Authority
- JP
- Japan
- Prior art keywords
- pipe
- steam
- inert gas
- pure water
- semiconductor wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000010926 purge Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 1
Description
第1図は本考案による装置の要部を示す側面図
、第2図は本考案の装置を用いて半導体ウエハを
酸化するため代表的なタイムチヤートと各モード
に対応するバルブ操作の手順を示した表、第3図
、第4図は従来装置の要部を示した側面図である
。
1,1a……純水、2……加熱槽、3……スチ
ーム導入管、4……キヤリアガス回路、5……三
方バルブ、6……反応管、7……ヒータ、8,1
3……給水管、8a,13a……給水バルブ、9
,14……排水管、9a,14a……排水バルブ
、10……予備槽、11……ブローバルブ、12
……連結管、15,16……不活性ガス導入管、
15a,16a……パージバルブ、17……ベン
ト管。
Figure 1 is a side view showing the main parts of the apparatus according to the present invention, and Figure 2 is a typical time chart and valve operation procedures corresponding to each mode for oxidizing semiconductor wafers using the apparatus according to the present invention. Table 1, FIGS. 3 and 4 are side views showing the main parts of the conventional device. 1, 1a...Pure water, 2...Heating tank, 3...Steam introduction pipe, 4...Carrier gas circuit, 5...Three-way valve, 6...Reaction tube, 7...Heater, 8,1
3... Water supply pipe, 8a, 13a... Water supply valve, 9
, 14... Drain pipe, 9a, 14a... Drain valve, 10... Reserve tank, 11... Blow valve, 12
... Connecting pipe, 15, 16 ... Inert gas introduction pipe,
15a, 16a... purge valve, 17... vent pipe.
Claims (1)
り酸化温度の半導体ウエハを装入した反応管に導
き、半導体ウエハを酸化するスチームガス発生装
置であつて、ブローバルブを有する連結管により
接続した加熱槽と予備槽からなり、加熱槽には純
水を循環する給水管と排水管、純水を加熱して蒸
気を発生させるヒータ、蒸気導入管と蒸気導入管
に三方バルブを介して一端が反応管に接続される
キヤリアガス回路、パージバルブを用いて外気の
侵入を阻止する不活性ガスを流す不活性ガス導入
管を備え、予備槽には純水を循環する給水管と排
水管、パージバルブを用いて外気の侵入を阻止す
る不活性ガスを流す不活性ガス導入管、連結管を
通して加熱槽から導入される蒸気を外部に放出す
るベント管を備えたことを特徴とする半導体ウエ
ハ酸化用スチームガス発生装置。 A steam gas generator that oxidizes semiconductor wafers by guiding steam generated by heating pure water into a reaction tube containing semiconductor wafers at an oxidation temperature using a carrier gas, and which is connected to a heating tank by a connecting pipe having a blow valve. The heating tank consists of a water supply pipe and a drain pipe that circulate pure water, a heater that heats the pure water and generates steam, a steam introduction pipe, and a three-way valve connected to the steam introduction pipe, with one end connected to the reaction pipe. It is equipped with a carrier gas circuit to be connected, an inert gas introduction pipe that flows inert gas to prevent the intrusion of outside air using a purge valve, a water supply pipe and a drain pipe that circulate pure water, and a purge valve to prevent outside air from entering the reserve tank. A steam gas generator for oxidizing semiconductor wafers, comprising: an inert gas introduction pipe through which inert gas flows to prevent inert gas from entering; and a vent pipe through which steam introduced from a heating tank through a connecting pipe is discharged to the outside.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP804186U JPH0342678Y2 (en) | 1986-01-23 | 1986-01-23 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP804186U JPH0342678Y2 (en) | 1986-01-23 | 1986-01-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62120347U true JPS62120347U (en) | 1987-07-30 |
JPH0342678Y2 JPH0342678Y2 (en) | 1991-09-06 |
Family
ID=30792056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP804186U Expired JPH0342678Y2 (en) | 1986-01-23 | 1986-01-23 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0342678Y2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6321836A (en) * | 1986-07-15 | 1988-01-29 | Rohm Co Ltd | Semiconductor manufacturing equipment |
-
1986
- 1986-01-23 JP JP804186U patent/JPH0342678Y2/ja not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6321836A (en) * | 1986-07-15 | 1988-01-29 | Rohm Co Ltd | Semiconductor manufacturing equipment |
Also Published As
Publication number | Publication date |
---|---|
JPH0342678Y2 (en) | 1991-09-06 |
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