JPS6321836A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

Info

Publication number
JPS6321836A
JPS6321836A JP16718886A JP16718886A JPS6321836A JP S6321836 A JPS6321836 A JP S6321836A JP 16718886 A JP16718886 A JP 16718886A JP 16718886 A JP16718886 A JP 16718886A JP S6321836 A JPS6321836 A JP S6321836A
Authority
JP
Japan
Prior art keywords
steam
water
tube
valve
conduit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16718886A
Other languages
Japanese (ja)
Other versions
JP2574766B2 (en
Inventor
Yoshikatsu Miyake
三宅 芳勝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP61167188A priority Critical patent/JP2574766B2/en
Publication of JPS6321836A publication Critical patent/JPS6321836A/en
Application granted granted Critical
Publication of JP2574766B2 publication Critical patent/JP2574766B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To omit a labor of disposing unnecessary water and to prevent a peripheral environment from being deteriorated by supplying steam to reevaporating means when a reaction furnace is not used, reevaporating the water to return it to steam, and discharging it together with the remaining steam without condensation by exhausting means out of a chamber. CONSTITUTION:When an oxidation is not executed in a furnace core tube 21, a valve 51 is closed, a valve 52 is opened to feed steam toward a tube 64. In this case, part of the steam is condensed on the inner wall of the tube 64 to return to water, the water flows together in the tube 64, and is discharged into a vessel 42. The remaining steam without condensation flows from an exhaust port 46 to an exhaust conduit 7, and is discharged into an exhaust duct. On the other hand, the water remaining in the vessel 42 is boiled by the heat of a heater 47 to be again steam, and discharged by the conduit 7 into an exhaust duct. At this time, since the vessel 42 is sealed, the steam is not scattered to the periphery. When an oxidation is executed again in the tube 21, the valve 51 is again opened, and the valve 52 is closed. At this time the steam and the water do not flow into the vessel 42.

Description

【発明の詳細な説明】 (イ)産業上の利用分野 この発明は、シリコンウェハ等のウェット酸化に使用さ
れる半導体製造装置の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application This invention relates to improvements in semiconductor manufacturing equipment used for wet oxidation of silicon wafers and the like.

(ロ)従来の技術 従来、シリコンウェハを水蒸気を使用して酸化する、ウ
ェット酸化に使用される半導体製造装置としては、第3
図に示すものが知られている。
(b) Conventional technology Conventionally, semiconductor manufacturing equipment used for wet oxidation, which oxidizes silicon wafers using water vapor, is
The one shown in the figure is known.

13は、水蒸気供給源であり、12はシリコンウェハが
収納されている反応炉である。水蒸気供給源13と反応
炉12を結ぶ導管(フレキシブルなチューブ、ホース等
も含む)16a上にはバルブ15aが設けられ、さらに
導管16aのバルブ15aより水蒸気供給源13側には
、他の導管16bが分岐して設けられている。この導管
16b上にも同様に、バルブ15bが設けられている。
13 is a water vapor supply source, and 12 is a reactor in which silicon wafers are stored. A valve 15a is provided on the conduit 16a (including flexible tubes, hoses, etc.) connecting the steam supply source 13 and the reactor 12, and another conduit 16b is provided on the steam supply source 13 side of the conduit 16a from the valve 15a. are set up in a branched manner. A valve 15b is similarly provided on this conduit 16b.

導管16bは下方に延伸し、その先端は適当な空容器1
4内に導入されている。
The conduit 16b extends downward, and its tip is connected to a suitable empty container 1.
It has been introduced in 4.

反応炉12内でシリコンウェハのウェット酸化を行う時
は、バルブ15aを開けると共にバルブ15bを閉め、
水蒸気供給源13よりの水蒸気を反応炉12内に送る。
When performing wet oxidation of silicon wafers in the reactor 12, the valve 15a is opened and the valve 15b is closed.
Steam from a steam supply source 13 is sent into the reactor 12 .

一方、反応炉12内でウェット酸化を行わない時、例え
ば反応炉12内にシリコンウェハをセットする時等は、
バルブ15aを閉じると共にバルブ15bを開け、水蒸
気供給?TA13よりの水蒸気を導管16bの方に送る
。これは、水蒸気供給源13自体を停止させると、再び
水蒸気を安定発生させるまでに時間を要するからである
On the other hand, when wet oxidation is not performed in the reactor 12, for example, when a silicon wafer is set in the reactor 12,
Close the valve 15a and open the valve 15b to supply steam. Steam from TA13 is sent to conduit 16b. This is because if the steam supply source 13 itself is stopped, it takes time to stably generate steam again.

導管16b内を流れる水茎気は、前記空容器14内に放
出されて冷却され、水に戻る。また、この水蒸気の一部
は、導管16b内で凝結して水に戻るが、この水も導管
16b内を流下する。これらの不要な水は、前記空容器
14内に貯溜される。
The water vapor flowing through the conduit 16b is discharged into the empty container 14, cooled, and returned to water. Further, a part of this water vapor condenses within the conduit 16b and returns to water, but this water also flows down within the conduit 16b. These unnecessary waters are stored in the empty container 14.

(ハ)発明が解決しようとする間ツ点 上記従来の半導体製造装置においては、前記空容器14
内に貯溜された不要な水を定期的に廃棄する手間が必要
となり、これを怠ると、空容器14内より水が溢れ、床
にひろがる不都合があった。
(c) Shortcomings to be Solved by the Invention In the above-mentioned conventional semiconductor manufacturing apparatus, the empty container 14
It is necessary to regularly dispose of unnecessary water stored inside the empty container 14, and if this is neglected, there is an inconvenience that water overflows from inside the empty container 14 and spreads on the floor.

また、導管16bより空容器14内に放出された水蒸気
が空容器14の口より漏れ、周囲の電気設備の絶縁性を
低下させる等、周囲の環境を劣化させる不都合があった
In addition, the water vapor released into the empty container 14 from the conduit 16b leaks from the opening of the empty container 14, causing problems such as deterioration of the surrounding environment, such as lowering the insulation of surrounding electrical equipment.

この発明は、上記不都合に鑑みなされたもので、不要な
水を廃棄する手間が省け、また水蒸気により周囲の環境
を劣化させない半導体製造装置の提供を目的としている
The present invention was made in view of the above-mentioned disadvantages, and an object of the present invention is to provide a semiconductor manufacturing apparatus that eliminates the trouble of disposing of unnecessary water and does not cause deterioration of the surrounding environment due to water vapor.

(ニ)問題点を解決するための手段 上記不都合を解決するための手段として、この発明の半
導体製造装置は、反応炉と、この反応炉に水蒸気を供給
する水蒸気供給手段と、この水蒸気供給手段と前記反応
炉との間に設けられ、水蒸気の流れを切替える切替弁手
段と、この切替弁手段に接続される再蒸発手段と、この
再蒸発手段で発生する水蒸気を室外4こ放出する排気手
段とを備えてなるものである。
(d) Means for Solving the Problems As a means for solving the above-mentioned disadvantages, the semiconductor manufacturing apparatus of the present invention includes a reactor, a steam supply means for supplying steam to the reactor, and a steam supply means for supplying steam to the reactor. and the reactor, a switching valve means for switching the flow of water vapor, a reevaporation means connected to the switching valve means, and an exhaust means for discharging the water vapor generated by the reevaporation means outdoors. It is equipped with the following.

(ホ)作用 この発明の半導体製造装置は、水蒸気供給源よりの水蒸
気を、反応炉を使用しない場合には切替弁手段により再
蒸発手段に流入させる。再蒸発手段では、この水蒸気の
一部が凝結してできた水を加熱し、再蒸発させて水蒸気
に戻し、凝結せずに残った水蒸気と共に、排気手段によ
り水蒸気の形のままで度外に放出する。
(E) Function The semiconductor manufacturing apparatus of the present invention allows steam from the steam supply source to flow into the reevaporation means by the switching valve means when the reactor is not used. The re-evaporation means heats the water produced by condensation of a portion of this water vapor, re-evaporates it back to water vapor, and removes the remaining water vapor, together with the water vapor that has not condensed, to the outside in the form of water vapor by the exhaust means. discharge.

(へ)実施例 この発明の一実施例を、第1図及び第2図に基づいて以
下に説明する。
(F) Embodiment An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

第1図は、この実施例に係る半導体製造装置1の全体構
成を示す図である。2は反応炉である。
FIG. 1 is a diagram showing the overall configuration of a semiconductor manufacturing apparatus 1 according to this embodiment. 2 is a reactor.

この反応炉2は、石英ガラス等よりなる炉心管21と、
この炉心管21をとりまくヒータ22とより構成されて
いる。炉心管21内には、石英ガラス製のボート23が
収納され、このボート23上には、シリコンウェハ24
、・・・・・・、24が装着されている。また、このボ
ート23は、炉心管21左端に取着されたキャップ26
を取外すことにより、炉心管21内に出入れすることが
できる。
This reactor 2 includes a furnace core tube 21 made of quartz glass or the like,
It is composed of a heater 22 surrounding this furnace core tube 21. A boat 23 made of quartz glass is housed in the furnace core tube 21, and a silicon wafer 24 is placed on the boat 23.
,...,24 are installed. This boat 23 also includes a cap 26 attached to the left end of the furnace tube 21.
By removing it, it can be taken in and out of the furnace core tube 21.

3は、水蒸気供給手段である。この水蒸気供給手段3は
、マントルヒータ31に純水Wの貯溜容器32を装着し
たものである。貯溜容器32上部には、安全弁33及び
導管61が接続されている。
3 is a water vapor supply means. This water vapor supply means 3 has a mantle heater 31 equipped with a storage container 32 for pure water W. A safety valve 33 and a conduit 61 are connected to the upper part of the storage container 32 .

導管61は、圧縮空気により作動するバルブ(切替弁手
段)51を介して、通管62に接続される。この導管6
2の先端は、前記炉心管21の右端に接続される。
The conduit 61 is connected to a passage pipe 62 via a valve (switching valve means) 51 operated by compressed air. This conduit 6
2 is connected to the right end of the furnace core tube 21.

また、導管61よりは、さらに他の導管63が分岐して
いる。この導管63は、圧縮空気により作動するバルブ
(切替弁手段)52を介して、フレキシブルなチューブ
64に接続される。このチューブ64は下方に導かれ、
再茎発手段4内に導入される。
Furthermore, another conduit 63 branches off from the conduit 61. This conduit 63 is connected to a flexible tube 64 via a valve (switching valve means) 52 operated by compressed air. This tube 64 is guided downward,
It is introduced into the reintroducing means 4.

再蒸発手段4は、第2図に示すように、金属カバ−41
a内面に断熱材41bを装着したケース41に、カップ
状の容器42を収納したものである。容器42上部開口
には、蓋44が螺着される。
The reevaporation means 4 includes a metal cover 41 as shown in FIG.
A cup-shaped container 42 is housed in a case 41 whose inner surface is equipped with a heat insulating material 41b. A lid 44 is screwed onto the upper opening of the container 42 .

このM44と容器42上部開口との間には、リング状の
パツキン43が挟まれており、容器42が密閉される。
A ring-shaped packing 43 is sandwiched between this M44 and the upper opening of the container 42, and the container 42 is hermetically sealed.

M44中夫には、前記チューブ64を導入する導入口4
5が設けられる。この導入口45は、蓋44中央より立
設されるスリーブ45’ aと、このスリーブ45aに
螺着されるリングキャップ45Cとより構成されている
。チューブ64先端は、リングキャップ45c及びスリ
ーブ45aの連通孔45bを挿通し、容器42内に導入
される。この時、リングキャップ45cの締付力により
、連通孔45b内面とチューブ64外面が密着し、容器
42の密閉が保たれる。
The M44 shaft has an inlet 4 through which the tube 64 is introduced.
5 is provided. The inlet 45 is composed of a sleeve 45'a that stands up from the center of the lid 44, and a ring cap 45C that is screwed onto the sleeve 45a. The tip of the tube 64 is introduced into the container 42 through the ring cap 45c and the communication hole 45b of the sleeve 45a. At this time, the inner surface of the communication hole 45b and the outer surface of the tube 64 are brought into close contact with each other due to the tightening force of the ring cap 45c, and the container 42 is kept airtight.

また、1ii44には排気口46が設けられている。In addition, an exhaust port 46 is provided in 1ii44.

この排気口46には、排気導管(排気手段)7が接続さ
れる。この排気導管7先端は、図示しない排気ダクト内
に導かれている。
An exhaust conduit (exhaust means) 7 is connected to the exhaust port 46 . The tip of this exhaust conduit 7 is guided into an exhaust duct (not shown).

一方、容器42底面には、ヒータ47と熱電対48が設
けられている。この熱電対48は、容器42底面の温度
を検出するためのもので、図示しないヒータ47の電源
制御回路に接続される。
On the other hand, a heater 47 and a thermocouple 48 are provided on the bottom of the container 42 . This thermocouple 48 is for detecting the temperature of the bottom surface of the container 42, and is connected to a power control circuit of a heater 47 (not shown).

次に、この実施例の半導体製造装置1の動作を以下に説
明する。
Next, the operation of the semiconductor manufacturing apparatus 1 of this embodiment will be explained below.

先ず、反応炉2でウェハ24、・・・・ζ・、24の酸
化が行われている際には、バルブ52を閉じ、バルブ5
1が開けられている。マントルヒータ31の熱により、
容器32内の純水Wが蒸発してできた水蒸気は、導管6
1、バルブ51及び導管62内を流れ、炉心管21内に
供給される。
First, when the wafers 24, ... ζ, 24 are being oxidized in the reactor 2, the valve 52 is closed and the valve 5
1 is open. Due to the heat of the mantle heater 31,
The water vapor created by evaporating the pure water W in the container 32 is transferred to the conduit 6.
1, it flows through the valve 51 and the conduit 62 and is supplied into the reactor core tube 21.

炉心管21内は、ヒータ22により高温に加熱されてお
り、前記水蒸気とウェハ24、・・・・・・、24との
間で酸化反応が行われる。前記水蒸気は、炉心管21内
を左方向に流れ、キャップ26に設けられた排気口26
aより排出される。
The inside of the furnace tube 21 is heated to a high temperature by a heater 22, and an oxidation reaction takes place between the water vapor and the wafers 24, . . . , 24. The steam flows leftward inside the reactor core tube 21 and passes through an exhaust port 26 provided in the cap 26.
It is discharged from a.

炉心管21内で酸化を行わない場合、例えばウェハ24
、・・・・・・、24を未酸化のものと交換する場合等
は、バルブ51を閉じ、バルブ52を開けて水蒸気をチ
ューブ64の方へ流す。水蒸気がチューブ64内を流れ
る際には、その一部がチューブ64内壁面で、耳語して
水に戻るが、この水もチューブ64内を水蒸気と共に流
れてゆく。
If oxidation is not performed in the furnace tube 21, for example, the wafer 24
. When water vapor flows inside the tube 64, a part of it turns back to water on the inner wall surface of the tube 64, but this water also flows inside the tube 64 together with the water vapor.

チューブ64内を流れる水と水蒸気は、容器42内に放
出される。凝結しないで残った水蒸気は、排出口46よ
り排気導管7へ流れ、排気ダクト内に放出される。一方
、容器42内に残った水は、ヒータ47の熱により沸瞠
し、再び水蒸気とされる。この水蒸気も、排気導管7に
より排気ダクト内に放出される。この時、容器42内は
密閉されているため、水蒸気が周囲に飛散しない。
Water and steam flowing within tube 64 are discharged into container 42 . The remaining uncondensed water vapor flows from the outlet 46 to the exhaust conduit 7 and is discharged into the exhaust duct. On the other hand, the water remaining in the container 42 is boiled by the heat of the heater 47 and is turned into water vapor again. This water vapor is also discharged into the exhaust duct via the exhaust conduit 7. At this time, since the inside of the container 42 is sealed, water vapor does not scatter around.

再び炉心管21で酸化が行われる際には、再びバルブ5
1を開け、バルブ52を閉じる。この時にはチューブ6
4には水蒸気は流れず、容器42内には水蒸気及び水は
流入しない。この間、容器42内の水が全て蒸発した場
合には、前記熱電対48が異常な温度上昇を検出し、ヒ
ータ47の発熱を中止又は発熱量を低下させ、いわば容
器42の空焚きが防止される。
When oxidation is performed in the furnace core tube 21 again, the valve 5 is closed again.
1 and close the valve 52. At this time tube 6
No water vapor flows into the container 42, and neither water vapor nor water flows into the container 42. During this time, if all the water in the container 42 has evaporated, the thermocouple 48 detects an abnormal temperature rise, and the heater 47 stops generating heat or reduces the amount of heat generated, thereby preventing the container 42 from being heated dry. Ru.

なお、上記実施例においては、再蒸発手段として密閉容
器にヒータを備えたものとしているが、これに限定され
るものではなく、適宜設計変更可能である。
In the above embodiment, the closed container is equipped with a heater as the re-evaporation means, but the present invention is not limited to this, and the design can be changed as appropriate.

また、上記実施例では、切替弁手段として圧縮空気によ
り作動する2つのバルブを使用しているが、これに限定
されるものではな(、三方パルプ等、適宜設計変更可能
である。
Further, in the above embodiment, two valves operated by compressed air are used as the switching valve means, but the present invention is not limited to this (three-way pulp, etc., design changes can be made as appropriate).

さらに、上記実施例では、排気手段として排気ダクト内
に導かれる排気導管を使用しているが、これに限定され
るものではなく、適宜設計変更可能である。
Further, in the above embodiment, an exhaust conduit guided into the exhaust duct is used as the exhaust means, but the exhaust conduit is not limited to this, and the design can be changed as appropriate.

(ト)発明の効果 この発明の半導体製造装置は、反応炉と、この反応炉に
水蒸気を供給する水蒸気供給手段と、この水蒸気供給手
段と前記反応炉との間に設けられ、水蒸気の流れを切替
える切替弁手段と、この切替弁手段に接続される再蒸発
手段と、この再蒸発手段よりの水蒸気を室外に放出する
排気手段とを備えてなるものであるから、不要な水を廃
棄する手間が省け、また、この不要な水が溢れる事故を
防止できる利点を有する。
(G) Effects of the Invention The semiconductor manufacturing apparatus of the present invention includes a reactor, a steam supply means for supplying steam to the reactor, and a steam supply means provided between the steam supply means and the reactor to control the flow of steam. Since it is equipped with a switching valve means for switching, a reevaporation means connected to the switching valve means, and an exhaust means for releasing water vapor from the reevaporation means to the outside, there is no need to dispose of unnecessary water. It also has the advantage of being able to prevent unnecessary water overflow accidents.

また、水蒸気の漏れによる周囲の環境の劣化を防止でい
る利点をも有する。
It also has the advantage of preventing deterioration of the surrounding environment due to water vapor leakage.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、この発明の一実施例に係る半導体製造装置の
構成を示す図、第2図は、同半導体製造装置の再蒸発手
段の縦断面図、第3図は、従来の半導体製造装置の構成
を簡略に示す図である。 2;反応炉、  3:水蒸気供給手段、4:再蒸発手段
、51・52:バルブ、7:排気導管。 特許出願人        ローム株式会社代理人  
   弁理士  中 村 茂 信第1図 2万りら・ひ 第2図
FIG. 1 is a diagram showing the configuration of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 2 is a longitudinal cross-sectional view of a re-evaporation means of the same semiconductor manufacturing apparatus, and FIG. 3 is a conventional semiconductor manufacturing apparatus. FIG. 2 is a diagram briefly showing the configuration of FIG. 2: Reactor, 3: Steam supply means, 4: Reevaporation means, 51 and 52: Valve, 7: Exhaust conduit. Patent applicant ROHM Co., Ltd. agent
Patent Attorney Shigeru Nakamura Figure 1: 20,000 Lira Figure 2

Claims (2)

【特許請求の範囲】[Claims] (1)反応炉と、この反応炉に水蒸気を供給する水蒸気
供給手段と、この水蒸気供給手段と前記反応炉との間に
設けられ、水蒸気の流れを切替える切替弁手段と、この
切替弁手段に接続される再蒸発手段と、この再蒸発手段
よりの水蒸気を室外に放出する排気手段とを備えてなる
半導体製造装置。
(1) A reactor, a steam supply means for supplying steam to the reactor, a switching valve means provided between the steam supply means and the reactor for switching the flow of steam, and a switching valve means for switching the flow of steam. A semiconductor manufacturing apparatus comprising a reevaporation means connected to the reevaporation means and an exhaust means for discharging water vapor from the reevaporation means to the outside.
(2)前記再蒸発手段は、前記切替弁手段に接続される
、ヒータを備えた密閉容器である特許請求の範囲第1項
記載の半導体製造装置。
(2) The semiconductor manufacturing apparatus according to claim 1, wherein the reevaporation means is a closed container equipped with a heater and connected to the switching valve means.
JP61167188A 1986-07-15 1986-07-15 Semiconductor manufacturing equipment Expired - Lifetime JP2574766B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61167188A JP2574766B2 (en) 1986-07-15 1986-07-15 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61167188A JP2574766B2 (en) 1986-07-15 1986-07-15 Semiconductor manufacturing equipment

Publications (2)

Publication Number Publication Date
JPS6321836A true JPS6321836A (en) 1988-01-29
JP2574766B2 JP2574766B2 (en) 1997-01-22

Family

ID=15845059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61167188A Expired - Lifetime JP2574766B2 (en) 1986-07-15 1986-07-15 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JP2574766B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020084282A (en) * 2018-11-28 2020-06-04 東京エレクトロン株式会社 Monitoring device for raw material tank and monitoring method for raw material tank

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JPS62120347U (en) * 1986-01-23 1987-07-30

Patent Citations (1)

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JPS62120347U (en) * 1986-01-23 1987-07-30

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020084282A (en) * 2018-11-28 2020-06-04 東京エレクトロン株式会社 Monitoring device for raw material tank and monitoring method for raw material tank

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