JPS62116743A - Cu wire for semiconductor device bonding - Google Patents
Cu wire for semiconductor device bondingInfo
- Publication number
- JPS62116743A JPS62116743A JP60255277A JP25527785A JPS62116743A JP S62116743 A JPS62116743 A JP S62116743A JP 60255277 A JP60255277 A JP 60255277A JP 25527785 A JP25527785 A JP 25527785A JP S62116743 A JPS62116743 A JP S62116743A
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- Prior art keywords
- wire
- bonding
- ball
- semiconductor device
- balance
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2924/01204—4N purity grades, i.e. 99.99%
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はIC,)ランシスター、ダイオード等の半導体
のワイヤーボンディングに用いるCu線に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a Cu wire used for wire bonding of semiconductors such as ICs, transistors, and diodes.
従来の技術
従来IC,LSI又はハイブリットIC等の半導体にお
いて、Siチップなどの半導体素子上に形成した電極パ
ッドとリードフレーム等のインナーリードとを電気的に
接続するために、AuやAt−Si合金からなる線径1
5〜6011m程度の細線が用いられている。Au細線
は生産性の高い熱融着法や超音波熱圧着法によるワイヤ
ーボンディングが可能で、耐食性も優れているところか
ら広く利用されているが、著しく高価である。ht−s
t合金細線はAu細線に比して安価であるが、大気中に
おいて熱融着法を適用することができないため生産性が
劣り、また腐食し易いために半導体の使用時に断線等の
故障を起し易い。特にエポキシ樹脂等の汎用樹脂モール
ド半導体では、該樹脂の透湿性と塩素汚染によるAt−
3i合金細線の腐食が大きな問題となっている。BACKGROUND ART Conventionally, in semiconductors such as ICs, LSIs, or hybrid ICs, Au or At-Si alloys are used to electrically connect electrode pads formed on semiconductor elements such as Si chips to inner leads such as lead frames. Wire diameter 1 consisting of
A thin wire of about 5 to 6011 m is used. Au thin wires are widely used because they can be wire bonded by highly productive heat fusion bonding methods or ultrasonic thermocompression bonding methods, and have excellent corrosion resistance, but they are extremely expensive. h-s
T-alloy thin wires are cheaper than Au thin wires, but they have lower productivity because they cannot be heat-fused in the atmosphere, and they are easily corroded, which can cause failures such as disconnection when used in semiconductors. Easy to do. In particular, in general-purpose resin molded semiconductors such as epoxy resin, the moisture permeability of the resin and At-
Corrosion of 3i alloy fine wire has become a major problem.
これに鑑み安価で比較的に耐食性も優れているCuやC
u合金細線が提案され検討が進められている。CuやC
u合金細線によればSiチップとAu細線のワイヤーボ
ンディング部におけるパープルブラック問題が回避でき
るばかりか、AuやAgメッキ部との接合性も良好であ
り、特に最近のメッキレスのCu又hCu合金製リード
フレームを用いる直接ワイヤーボンディングでは、同種
の金属接合となって接合性を安定化すると共に樹脂封止
後の耐湿性にも優れている特徴を有している。In view of this, Cu and C are inexpensive and have relatively good corrosion resistance.
U-alloy thin wires have been proposed and are being studied. Cu and C
U-alloy thin wire not only avoids the purple black problem at the wire bonding part between the Si chip and Au thin wire, but also has good bonding properties with Au or Ag plated parts, especially when used with recent plating-less Cu or hCu alloy leads. Direct wire bonding using a frame has the characteristics of stabilizing the bonding property by forming the same type of metal bond and also having excellent moisture resistance after resin sealing.
発明が解決しようとする問題点
ボンディング用Cu線に要求される特性として、ボール
形状が良好でボール硬度が可及的にAuに近く、半導体
素子の損傷を招くことがないこと。またリードフレーム
のインナーリード部への接合性が良好なこと等が必要と
されている。Problems to be Solved by the Invention The characteristics required of the Cu wire for bonding are that the ball shape is good, the ball hardness is as close as possible to Au, and the semiconductor element is not damaged. It is also required that the lead frame has good bondability to the inner lead portion.
ボンディング用Cu線として純銅を用いることが特開昭
60−124959号公報により提案されているが、純
銅のボール硬度はAuのボール硬度の約2倍近くもあり
、ボールボンド時に半導体素子の損傷を招く恐れがある
。またCuにV%Cr%Hf等を添加することにより、
ボール硬度を可及的に小さくする方法が特開昭60−1
7040号公報により提案されているが、これ等はボー
ル形成時にワイヤーそのものが軟かくなり、張つ几ワイ
ヤーに弛みを生じて他のワイヤーや半導体素子に接触し
、ショート’を起す恐れがあるばカリか、インナーリー
ドとの接合時に過剰の変形を生じ、接合力を低下する欠
点がある。The use of pure copper as Cu wire for bonding has been proposed in Japanese Patent Application Laid-Open No. 124959/1982, but the ball hardness of pure copper is nearly twice that of Au, and it is difficult to damage semiconductor elements during ball bonding. There is a risk of inviting Also, by adding V%Cr%Hf etc. to Cu,
A method to reduce the hardness of the ball as much as possible is disclosed in JP-A-60-1.
This method is proposed in Japanese Patent No. 7040, but when forming a ball, the wire itself becomes soft and the tension wire becomes slack, which may come into contact with other wires or semiconductor elements, causing a short circuit. This has the disadvantage that excessive deformation occurs when bonded to the inner lead, reducing the bonding force.
問題点を解決する几めの手段
本発明にこれに鑑み種々検討の結果、優れた特性を有す
る半導体素子ボンディング用Cu線を開発したものであ
る。Elaborate Means to Solve the Problems In view of the present invention, and as a result of various studies, we have developed a Cu wire for semiconductor element bonding having excellent characteristics.
即ち本発明Cu線の一つに、Ti0.0005〜0.2
wt%と、Mg、 Fe、 Ni、 Cr%S i、
Co、 Mn。That is, one of the Cu wires of the present invention contains Ti0.0005 to 0.2
wt%, Mg, Fe, Ni, Cr%Si,
Co, Mn.
At%B%Zrの何れか1種又は2種以上を合計で0.
0005〜0.2wt%と金含み、残部Cuからなるこ
とを特徴とするものである。Any one or two or more of At%B%Zr in a total of 0.
It is characterized by containing gold at 0005 to 0.2 wt%, and the balance being Cu.
また本発明Cu線の他の一つに、TiO,0005〜0
.2wt%と、Mg、Fe%Ni%Cr、 S i%C
o。In addition, another one of the Cu wires of the present invention is TiO,0005~0
.. 2wt%, Mg, Fe%Ni%Cr, Si%C
o.
Mn、At、B、Zrの何れか1種又は2種以上を合計
T0.0005〜0.2wt%と、Zn、 Sn%Ca
。Any one or more of Mn, At, B, and Zr in a total T0.0005 to 0.2 wt%, Zn, Sn%Ca
.
Be、Y、希土類元素の何れか1種又は2種以上を合計
で0.2 w t%以下とを含み、残部Cuからなるこ
と全特徴とするものである。It is characterized in that it contains a total of 0.2 wt% or less of any one or more of Be, Y, and rare earth elements, and the balance is Cu.
作用
本発明はCuに上記元素を微量添加1.7tもので、C
uVCIri所謂不可避的不純物によ!ll′I&量の
元素の添加効果が損なわれないように、望ましくは純度
99.99wt%以上(以下wt%f係と略記)の純銅
を用いる。Function The present invention is made by adding 1.7 tons of the above elements to Cu.
uVCIri due to so-called inevitable impurities! Preferably, pure copper with a purity of 99.99 wt % or more (hereinafter abbreviated as wt % f) is used so that the effect of adding the elements in the amount of ll'I& is not impaired.
本発明においてTi含有量を0.0005〜0.2%と
限定したのは、Tiはボール成形時のボール硬度を低下
させる効果を有するも、その含有量がo、ooos%未
満でに効果が不十分となり、0.2St−越えると逆に
ボール硬度が高くなるためである。またMg、 Fe%
Ni%Cr、 3i、 Co、Mn、hts B% Z
rの何れか1種又は2種以上の合計含有量を0.000
5〜0.2%と限定したのに、これ等元素はTiとの共
存下でボール硬度を高めることなく、Cu線としての高
温強度を向上する効果を有するも、合計含有量が0.0
005%未満では効果が認められず、0.2%を越える
とボール硬度を必要以上に高め、かつ伸線加工性を低下
させるためである。The reason why the Ti content is limited to 0.0005 to 0.2% in the present invention is that although Ti has the effect of lowering the ball hardness during ball molding, the effect is less when the content is less than o, oos%. This is because the ball hardness becomes insufficient, and if it exceeds 0.2 St, the ball hardness increases. Also, Mg, Fe%
Ni%Cr, 3i, Co, Mn, hts B% Z
The total content of any one or two or more of r is 0.000
Although these elements are limited to 5 to 0.2%, they have the effect of improving the high temperature strength of the Cu wire without increasing the ball hardness in coexistence with Ti, but the total content is 0.0%.
This is because if it is less than 0.005%, no effect will be observed, and if it exceeds 0.2%, the ball hardness will increase more than necessary and the wire drawability will decrease.
また上記Cu線に更にZn、 Sn、 Ca、 f3e
、Y、希土類元素の何れか1種又は2種以上を合計で0
.2%以下含有せしめるのに、ボール硬度を高めること
なく、伸線加工性及び高温特性をより高めるためで、合
計含有量が0.2%を越えると効果が飽和するばかりか
、ボール硬度を不必要に高めるようになるためである。Moreover, in addition to the above Cu wire, Zn, Sn, Ca, f3e
, Y, any one or two or more rare earth elements in total 0
.. The purpose of containing 2% or less is to further improve wire drawability and high-temperature properties without increasing ball hardness; if the total content exceeds 0.2%, not only will the effect be saturated, but the ball hardness will deteriorate. This is because you will be able to raise it as necessary.
実施例
真空溶解鋳造炉を用いて、純度99.997%の電気銅
を溶解し、これに各合金元素を添加して鋳造し、第1表
(1)〜(2)に示す組成の直径25朋、長さ140咽
のビレットを得た。これを面前して直径20■、長さ1
30■とじ、これを溝ロールによる冷間圧延と300℃
の真空焼鈍を繰返し、直径8mで皮ムキ加工により直径
7.5+mとした。これについて50%の伸線加工と3
00℃の真空焼鈍を繰返し、直径25μ常のボンディン
グ用Cu線を製造し、その伸線加工性を比較した。Example Using a vacuum melting and casting furnace, electrolytic copper with a purity of 99.997% was melted, and various alloying elements were added thereto and cast. I got a billet with a length of 140 mm. In front of this, the diameter is 20cm and the length is 1
30 ■ Stitched, cold rolled with grooved rolls and 300℃
The vacuum annealing process was repeated, and the diameter was 8 m, and the diameter was reduced to 7.5+ m by peeling. Regarding this, 50% wire drawing processing and 3
Vacuum annealing at 00° C. was repeated to produce bonding Cu wires with a diameter of 25 μm, and their wire drawability was compared.
また得られたCu線について、250℃における高温引
張強度及び10%H,+ N、ガス中でのボール底形に
おけるポール形状及び502荷重でのボール歪量を調べ
た。ま几荷重50gr、超音波出力0.IW、ボンディ
ング時間0.1μSeeの条件における結線の形状を調
べた。後、プル試験によりCu線のボンディング強度と
破断モードを調べた。これ等の結果を第1表(1)〜(
2)に併記した。尚ボール歪に横方向の直径り、と縦方
向の直径D2の比D1/D2で示し、た。In addition, the obtained Cu wire was examined for its high temperature tensile strength at 250°C, 10% H, +N, the pole shape in the ball bottom shape in gas, and the amount of ball distortion at 502 load. Machine load 50gr, ultrasonic output 0. The shape of the connection under the conditions of IW and bonding time of 0.1 μSee was investigated. Afterwards, the bonding strength and fracture mode of the Cu wire were investigated by a pull test. These results are shown in Table 1 (1)-(
Also listed in 2). The ball strain is expressed as the ratio D1/D2 of the diameter in the lateral direction and the diameter D2 in the longitudinal direction.
算1表−(1
本発明Cu線 I Cu−0,05]T、i−0,
0UO6Fe2 Cu−Q、049Ti−0,03
1Fe3 Cu−0,052Ti −0,18Fe
4 Cu−0,051Ti−0,0006Ni5
Cu−0,04FITi−0,035Ni//
6 Cu−0,049Ti −0,17N
i/’ 7 Cu−0,050Ti−0
,00j15Crtt RCu−0,000
6Ti−0,029Crtt 9 Cu
−0,052Ti−0,032Crtt 1
0 Cu−0,]8Ti−0,032Crtt
11 Cu−0,06] T l −0,16
Cr12 Cu−0,052Ti−0,0006Si
// 13 Cu−0,051Ti−0,
18Sitt 14 Cu−0,051T
i−0,0006C。Calculation table 1 - (1 Cu wire of the present invention I Cu-0,05]T, i-0,
0UO6Fe2 Cu-Q, 049Ti-0,03
1Fe3 Cu-0,052Ti-0,18Fe
4 Cu-0,051Ti-0,0006Ni5
Cu-0,04FITi-0,035Ni//
6 Cu-0,049Ti-0,17N
i/' 7 Cu-0,050Ti-0
,00j15Crtt RCu-0,000
6Ti-0,029Crtt9Cu
-0,052Ti-0,032Crtt 1
0 Cu-0,]8Ti-0,032Crtt
11 Cu-0,06] T l -0,16
Cr12Cu-0,052Ti-0,0006Si
// 13 Cu-0,051Ti-0,
18Sitt 14 Cu-0,051T
i-0,0006C.
// 15 Cu−0,048Ti−0,
19(:。// 15 Cu-0,048Ti-0,
19(:.
// ] 6 Cu−0,062Ti−0
,0007Mnt/ 17 Cu−0,0
57Ti−0,17Mntt ] Ft
Cu−0,052Ti O,0005Attt
] 9 Cu−0,05] T i O,1
9kt20 Cu−0,05]Ti−0,0006B
tl 23 Cu−0,050Ti −0
,16Ba 22 Cu−0,049Ti
−0,0006Zr// 23 Cu−0
,053T i −0,19Z r24 Cu−0,
042Ti−0,0009Fe−0,000RCr−0
,0// 25 Cu−o、oso’ri
−0,0]3Ni−0,002]Cr26 Cu−0
,048Ti−0,052Mgtt 27
Cu−0,054Ti−0,052Ni−0,000
6Zn28 Cu−0,054Ti−0,0053N
i−0,]9Zntt 29 Cu−0,
051Ti−0,05]Ni−0,0007Sno
3(l Cu−0,052Ti−0,05]
Ni−0,]R8n3] Cu−0,05[’i−0
.05]Ni−0.0O(16ca32 Cu−0,
052Ti−0,05ONi−Oj7Ca33 Cu
−0,050Ti−0,051Ni−0,0OU7Be
31 Cu−IIす51 T i −+1.il 、1
8N i −0,1R13c// 10
tt tt u
n○ 12 n Q、7
tt tt◎ 9 tt
Q、ill 7/ a〃 JO
〃 〃 〃 〃〃12
tt tt tt
tttt 33tt O,g
tt tt○ 12 tt
QJ(tt tt◎ ]0 〃
〃 〃 〃0 13 tt
u o tt◎ B
tt tt n tt//
12 LL l/
/l //// 8
tt O,9tt tt〃 】
ス
〃 9 〃 〃 〃
〃0 33 a Qj(tt
tt◎ ]】〃〃
Q 14 0 〃〃〃
◎ 9 ◎ 〃〃〃
〃12 tt O09n
tt12Mn// 11 //
O,Rn tt// 32
tt
tt// 13 n O
,9n tttt IQ
tt Q、Ra tt〃】2
10 〃 〃 〃 〃
13 // 0.7//
10 tt O,8tt
nn 12
n u〃 】0
1、I L/ 0.7第1表(1)
〜(2)から明らかなように、Cu1cTiを加えた
もの、更にはこれにZn%Sn、(:a%Be。// ] 6 Cu-0,062Ti-0
,0007Mnt/ 17 Cu-0,0
57Ti-0,17Mntt ] Ft
Cu-0,052Ti O,0005Attt
] 9 Cu-0,05] T i O,1
9kt20 Cu-0,05]Ti-0,0006B
tl 23 Cu-0,050Ti-0
,16Ba22Cu-0,049Ti
-0,0006Zr// 23 Cu-0
,053T i -0,19Z r24 Cu-0,
042Ti-0,0009Fe-0,000RCr-0
,0// 25 Cu-o, oso'ri
-0,0]3Ni-0,002]Cr26 Cu-0
,048Ti-0,052Mgtt 27
Cu-0,054Ti-0,052Ni-0,000
6Zn28 Cu-0,054Ti-0,0053N
i-0, ]9Zntt 29 Cu-0,
051Ti-0,05]Ni-0,0007Sno
3(lCu-0,052Ti-0,05]
Ni-0,]R8n3] Cu-0,05['i-0
.. 05] Ni-0.0O (16ca32 Cu-0,
052Ti-0,05ONi-Oj7Ca33Cu
-0,050Ti-0,051Ni-0,0OU7Be
31 Cu-II51 T i −+1. il, 1
8N i -0,1R13c// 10
tt tt u
n○ 12 n Q, 7
tt tt◎ 9 tt
Q, ill 7/ a〃 JO
〃 〃 〃 〃〃12
tt tt tt
tttt 33tt O,g
tt tt○ 12 tt
QJ(tt tt◎ ]0 〃
〃 〃 〃0 13 tt
u o tt◎ B
tt tt n tt//
12 LL l/
/l //// 8
tt O,9tt tt〃]
〃 9 〃 〃 〃
〃0 33 a Qj(tt
tt◎ ]】〃〃 Q 14 0 〃〃〃 ◎ 9 ◎ 〃〃〃 〃12 tt O09n
tt12Mn// 11 //
O,Rntt//32
tt
tt // 13 n O
,9n tttt IQ
tt Q, Ra tt〃】2 10 〃 〃 〃 〃
13 // 0.7 //
10tt O,8tt
nn 12
n u〃 ]0 1, I L/ 0.7 Table 1 (1)
As is clear from (2), Cu1cTi is added to this, and Zn%Sn and (:a%Be) are added to this.
Y、希土類元素の何れか1種又は2種以上(以下Zn等
と略記)を加えた本発明Cui随1〜43は何れも高温
強度が8〜14Fと優れ、ボール形状も真球に近く、ボ
ール歪みも従来のAu線と同程度であるなど、ボンディ
ングワイヤーに必要とされる特性を十分に満足し、プル
試験からボンディング性も良いことが判る。Cui Nos. 1 to 43 of the present invention, which contain one or more of Y and rare earth elements (hereinafter abbreviated as Zn, etc.), have excellent high temperature strength of 8 to 14F, and the ball shape is close to a true sphere. It fully satisfies the characteristics required for bonding wires, such as ball distortion being on the same level as conventional Au wires, and pull tests show that it has good bonding properties.
これに対し比較Cu線、例えば純銅線N144、Cu−
Ti合金線Na45.46ではボンディングワイヤーに
必要とされる特性が劣り、またCuにTiとNi等、更
にはこれにzn等を加えたものでも、その含有量が本発
明で規定する量以上に含むもの(NlL47〜61)で
は、比較Cu線N(L57を除き何れも伸線加工性が悪
く、細線に加工するのを断念し、た。また比較Cu線随
57に伸線加工性が良好なるも、ボール歪が大きく、ボ
ンディング性が劣ることが判る。In contrast, comparative Cu wires, such as pure copper wire N144, Cu-
Ti alloy wire Na45.46 has poor properties required for bonding wires, and even Cu with Ti, Ni, etc. added thereto, as well as Zn, etc., have a content exceeding the amount specified in the present invention. In the case of those containing (NlL47 to 61), all of the comparative Cu wires N (except L57) had poor wire drawability, and we gave up on processing them into thin wires.In addition, the comparative Cu wire No. 57 had good wire drawability. However, it can be seen that the ball distortion is large and the bonding performance is poor.
発明の効果
このように本発明+Ctt線は安価で、ボンディングワ
イヤーに必要とするすべての特性を満足すbもので、半
導体装置のボンディングワイヤーとして、その接合信頼
性を著しく向上することができる顕著な効果を奏するも
σ)である。Effects of the Invention As described above, the +Ctt wire of the present invention is inexpensive, satisfies all the characteristics required for a bonding wire, and is an outstanding wire that can be used as a bonding wire for semiconductor devices to significantly improve its bonding reliability. The effect is also σ).
Claims (3)
、Ni、Cr、Si、Co、Mn、Al、B、Zrの何
れか1種又は2種以上を合計で0.0005〜0.2w
t%とを含み、残部Cuからなる半導体素子ボンディン
グ用Cu線。(1) Ti0.0005-0.2wt%, Mg, Fe
, Ni, Cr, Si, Co, Mn, Al, B, Zr or more in total from 0.0005 to 0.2w
A Cu wire for bonding a semiconductor element, including t% and the balance being Cu.
いる特許請求の範囲第1項記載の半導体素子ボンディン
グ用Cu線。(2) The Cu wire for semiconductor element bonding according to claim 1, wherein the remaining Cu is pure copper with a purity of 99.99 wt% or more.
、Ni、Cr、Si、Co、Mn、Al、B、Zrの何
れか1種又は2種以上を合計で0.0005〜0.2w
t%と、Zn、SnCa、Be、Y、希土類元素の何れ
か1種又は2種以上を合計で0.2wt%以下とを含み
、残部Cuからなる半導体素子ボンディング用Cu線。(3) Ti0.0005-0.2wt%, Mg, Fe
, Ni, Cr, Si, Co, Mn, Al, B, Zr or more in total from 0.0005 to 0.2w
t% and a total of 0.2 wt% or less of any one or more of Zn, SnCa, Be, Y, and rare earth elements, and the balance is Cu for semiconductor device bonding.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60255277A JPS62116743A (en) | 1985-11-14 | 1985-11-14 | Cu wire for semiconductor device bonding |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60255277A JPS62116743A (en) | 1985-11-14 | 1985-11-14 | Cu wire for semiconductor device bonding |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62116743A true JPS62116743A (en) | 1987-05-28 |
Family
ID=17276513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60255277A Pending JPS62116743A (en) | 1985-11-14 | 1985-11-14 | Cu wire for semiconductor device bonding |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62116743A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63171841A (en) * | 1988-01-11 | 1988-07-15 | Furukawa Electric Co Ltd:The | Copper alloy for electronic equipment |
US6758920B2 (en) | 1999-11-24 | 2004-07-06 | Honeywell International Inc. | Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets |
US6849139B2 (en) | 1999-06-02 | 2005-02-01 | Honeywell International Inc. | Methods of forming copper-containing sputtering targets |
-
1985
- 1985-11-14 JP JP60255277A patent/JPS62116743A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63171841A (en) * | 1988-01-11 | 1988-07-15 | Furukawa Electric Co Ltd:The | Copper alloy for electronic equipment |
US6849139B2 (en) | 1999-06-02 | 2005-02-01 | Honeywell International Inc. | Methods of forming copper-containing sputtering targets |
US6758920B2 (en) | 1999-11-24 | 2004-07-06 | Honeywell International Inc. | Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets |
US6858102B1 (en) * | 2000-11-15 | 2005-02-22 | Honeywell International Inc. | Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets |
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