JPS62116743A - Cu wire for semiconductor device bonding - Google Patents

Cu wire for semiconductor device bonding

Info

Publication number
JPS62116743A
JPS62116743A JP60255277A JP25527785A JPS62116743A JP S62116743 A JPS62116743 A JP S62116743A JP 60255277 A JP60255277 A JP 60255277A JP 25527785 A JP25527785 A JP 25527785A JP S62116743 A JPS62116743 A JP S62116743A
Authority
JP
Japan
Prior art keywords
wire
bonding
ball
semiconductor device
balance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60255277A
Other languages
Japanese (ja)
Inventor
Toru Tanigawa
徹 谷川
Shoji Shiga
志賀　章二
Masaaki Kurihara
正明 栗原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP60255277A priority Critical patent/JPS62116743A/en
Publication of JPS62116743A publication Critical patent/JPS62116743A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01012—Magnesium [Mg]
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    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
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    • H01L2924/01028—Nickel [Ni]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a Cu wire for semiconductor device bonding remarkably improved in joining reliability by blending specific amounts of Ti and 1 or >=2 elements among Mg, Fe, Ni, Cr, Si, Co, Mn, Al and B with Cu. CONSTITUTION:The Cu wire for semiconductor device bonding has a composition consisting of, by weight, 0.00005-0.2% Ti, 0.0002-0.2% of 1 or >=2 elements among Mg, Fe, Ni, Cr, Si, Co, Mn, Al and B, and the balance Cu, in which the purity of Cu as the balance is regulated to 99.99wt% or above, or the one further containing <0.2% of 1 or >=2 kinds among Zn, Sn, Ca, Be, Y and rare earth elements and the balance Cu.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はＩＣ，）ランシスター、ダイオード等の半導体
のワイヤーボンディングに用いるＣｕ線に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a Cu wire used for wire bonding of semiconductors such as ICs, transistors, and diodes.

従来の技術 従来ＩＣ，ＬＳＩ又はハイブリットＩＣ等の半導体にお
いて、Ｓｉチップなどの半導体素子上に形成した電極パ
ッドとリードフレーム等のインナーリードとを電気的に
接続するために、ＡｕやＡｔ−Ｓｉ合金からなる線径１
５〜６０１１ｍ程度の細線が用いられている。Ａｕ細線
は生産性の高い熱融着法や超音波熱圧着法によるワイヤ
ーボンディングが可能で、耐食性も優れているところか
ら広く利用されているが、著しく高価である。ｈｔ−ｓ
ｔ合金細線はＡｕ細線に比して安価であるが、大気中に
おいて熱融着法を適用することができないため生産性が
劣り、また腐食し易いために半導体の使用時に断線等の
故障を起し易い。特にエポキシ樹脂等の汎用樹脂モール
ド半導体では、該樹脂の透湿性と塩素汚染によるＡｔ−
３ｉ合金細線の腐食が大きな問題となっている。BACKGROUND ART Conventionally, in semiconductors such as ICs, LSIs, or hybrid ICs, Au or At-Si alloys are used to electrically connect electrode pads formed on semiconductor elements such as Si chips to inner leads such as lead frames. Wire diameter 1 consisting of
A thin wire of about 5 to 6011 m is used. Au thin wires are widely used because they can be wire bonded by highly productive heat fusion bonding methods or ultrasonic thermocompression bonding methods, and have excellent corrosion resistance, but they are extremely expensive. h-s
T-alloy thin wires are cheaper than Au thin wires, but they have lower productivity because they cannot be heat-fused in the atmosphere, and they are easily corroded, which can cause failures such as disconnection when used in semiconductors. Easy to do. In particular, in general-purpose resin molded semiconductors such as epoxy resin, the moisture permeability of the resin and At-
Corrosion of 3i alloy fine wire has become a major problem.

これに鑑み安価で比較的に耐食性も優れているＣｕやＣ
ｕ合金細線が提案され検討が進められている。ＣｕやＣ
ｕ合金細線によればＳｉチップとＡｕ細線のワイヤーボ
ンディング部におけるパープルブラック問題が回避でき
るばかりか、ＡｕやＡｇメッキ部との接合性も良好であ
り、特に最近のメッキレスのＣｕ又ｈＣｕ合金製リード
フレームを用いる直接ワイヤーボンディングでは、同種
の金属接合となって接合性を安定化すると共に樹脂封止
後の耐湿性にも優れている特徴を有している。In view of this, Cu and C are inexpensive and have relatively good corrosion resistance.
U-alloy thin wires have been proposed and are being studied. Cu and C
U-alloy thin wire not only avoids the purple black problem at the wire bonding part between the Si chip and Au thin wire, but also has good bonding properties with Au or Ag plated parts, especially when used with recent plating-less Cu or hCu alloy leads. Direct wire bonding using a frame has the characteristics of stabilizing the bonding property by forming the same type of metal bond and also having excellent moisture resistance after resin sealing.

発明が解決しようとする問題点 ボンディング用Ｃｕ線に要求される特性として、ボール
形状が良好でボール硬度が可及的にＡｕに近く、半導体
素子の損傷を招くことがないこと。またリードフレーム
のインナーリード部への接合性が良好なこと等が必要と
されている。Problems to be Solved by the Invention The characteristics required of the Cu wire for bonding are that the ball shape is good, the ball hardness is as close as possible to Au, and the semiconductor element is not damaged. It is also required that the lead frame has good bondability to the inner lead portion.

ボンディング用Ｃｕ線として純銅を用いることが特開昭
６０−１２４９５９号公報により提案されているが、純
銅のボール硬度はＡｕのボール硬度の約２倍近くもあり
、ボールボンド時に半導体素子の損傷を招く恐れがある
。またＣｕにＶ％Ｃｒ％Ｈｆ等を添加することにより、
ボール硬度を可及的に小さくする方法が特開昭６０−１
７０４０号公報により提案されているが、これ等はボー
ル形成時にワイヤーそのものが軟かくなり、張つ几ワイ
ヤーに弛みを生じて他のワイヤーや半導体素子に接触し
、ショート’を起す恐れがあるばカリか、インナーリー
ドとの接合時に過剰の変形を生じ、接合力を低下する欠
点がある。The use of pure copper as Cu wire for bonding has been proposed in Japanese Patent Application Laid-Open No. 124959/1982, but the ball hardness of pure copper is nearly twice that of Au, and it is difficult to damage semiconductor elements during ball bonding. There is a risk of inviting Also, by adding V%Cr%Hf etc. to Cu,
A method to reduce the hardness of the ball as much as possible is disclosed in JP-A-60-1.
This method is proposed in Japanese Patent No. 7040, but when forming a ball, the wire itself becomes soft and the tension wire becomes slack, which may come into contact with other wires or semiconductor elements, causing a short circuit. This has the disadvantage that excessive deformation occurs when bonded to the inner lead, reducing the bonding force.

問題点を解決する几めの手段 本発明にこれに鑑み種々検討の結果、優れた特性を有す
る半導体素子ボンディング用Ｃｕ線を開発したものであ
る。Elaborate Means to Solve the Problems In view of the present invention, and as a result of various studies, we have developed a Cu wire for semiconductor element bonding having excellent characteristics.

即ち本発明Ｃｕ線の一つに、Ｔｉ０．０００５〜０．２
ｗｔ％と、Ｍｇ、　Ｆｅ、　Ｎｉ、　Ｃｒ％Ｓ　ｉ、　
Ｃｏ、　Ｍｎ。That is, one of the Cu wires of the present invention contains Ti0.0005 to 0.2
wt%, Mg, Fe, Ni, Cr%Si,
Co, Mn.

Ａｔ％Ｂ％Ｚｒの何れか１種又は２種以上を合計で０．
０００５〜０．２ｗｔ％と金含み、残部Ｃｕからなるこ
とを特徴とするものである。Any one or two or more of At%B%Zr in a total of 0.
It is characterized by containing gold at 0005 to 0.2 wt%, and the balance being Cu.

また本発明Ｃｕ線の他の一つに、ＴｉＯ，０００５〜０
．２ｗｔ％と、Ｍｇ、Ｆｅ％Ｎｉ％Ｃｒ、　Ｓ　ｉ％Ｃ
ｏ。In addition, another one of the Cu wires of the present invention is TiO,0005~0
．． 2wt%, Mg, Fe%Ni%Cr, Si%C
o.

Ｍｎ、Ａｔ、Ｂ、Ｚｒの何れか１種又は２種以上を合計
Ｔ０．０００５〜０．２ｗｔ％と、Ｚｎ、　Ｓｎ％Ｃａ
。Any one or more of Mn, At, B, and Zr in a total T0.0005 to 0.2 wt%, Zn, Sn%Ca
.

Ｂｅ、Ｙ、希土類元素の何れか１種又は２種以上を合計
で０．２　ｗ　ｔ％以下とを含み、残部Ｃｕからなるこ
と全特徴とするものである。It is characterized in that it contains a total of 0.2 wt% or less of any one or more of Be, Y, and rare earth elements, and the balance is Cu.

作用 本発明はＣｕに上記元素を微量添加１．７ｔもので、Ｃ
ｕＶＣＩｒｉ所謂不可避的不純物によ！ｌｌ′Ｉ＆量の
元素の添加効果が損なわれないように、望ましくは純度
９９．９９ｗｔ％以上（以下ｗｔ％ｆ係と略記）の純銅
を用いる。Function The present invention is made by adding 1.7 tons of the above elements to Cu.
uVCIri due to so-called inevitable impurities! Preferably, pure copper with a purity of 99.99 wt % or more (hereinafter abbreviated as wt % f) is used so that the effect of adding the elements in the amount of ll'I& is not impaired.

本発明においてＴｉ含有量を０．０００５〜０．２％と
限定したのは、Ｔｉはボール成形時のボール硬度を低下
させる効果を有するも、その含有量がｏ、ｏｏｏｓ％未
満でに効果が不十分となり、０．２Ｓｔ−越えると逆に
ボール硬度が高くなるためである。またＭｇ、　Ｆｅ％
Ｎｉ％Ｃｒ、　３ｉ、　Ｃｏ、Ｍｎ、ｈｔｓ　Ｂ％　Ｚ
ｒの何れか１種又は２種以上の合計含有量を０．０００
５〜０．２％と限定したのに、これ等元素はＴｉとの共
存下でボール硬度を高めることなく、Ｃｕ線としての高
温強度を向上する効果を有するも、合計含有量が０．０
００５％未満では効果が認められず、０．２％を越える
とボール硬度を必要以上に高め、かつ伸線加工性を低下
させるためである。The reason why the Ti content is limited to 0.0005 to 0.2% in the present invention is that although Ti has the effect of lowering the ball hardness during ball molding, the effect is less when the content is less than o, oos%. This is because the ball hardness becomes insufficient, and if it exceeds 0.2 St, the ball hardness increases. Also, Mg, Fe%
Ni%Cr, 3i, Co, Mn, hts B% Z
The total content of any one or two or more of r is 0.000
Although these elements are limited to 5 to 0.2%, they have the effect of improving the high temperature strength of the Cu wire without increasing the ball hardness in coexistence with Ti, but the total content is 0.0%.
This is because if it is less than 0.005%, no effect will be observed, and if it exceeds 0.2%, the ball hardness will increase more than necessary and the wire drawability will decrease.

また上記Ｃｕ線に更にＺｎ、　Ｓｎ、　Ｃａ、　ｆ３ｅ
、Ｙ、希土類元素の何れか１種又は２種以上を合計で０
．２％以下含有せしめるのに、ボール硬度を高めること
なく、伸線加工性及び高温特性をより高めるためで、合
計含有量が０．２％を越えると効果が飽和するばかりか
、ボール硬度を不必要に高めるようになるためである。Moreover, in addition to the above Cu wire, Zn, Sn, Ca, f3e
, Y, any one or two or more rare earth elements in total 0
．． The purpose of containing 2% or less is to further improve wire drawability and high-temperature properties without increasing ball hardness; if the total content exceeds 0.2%, not only will the effect be saturated, but the ball hardness will deteriorate. This is because you will be able to raise it as necessary.

実施例 真空溶解鋳造炉を用いて、純度９９．９９７％の電気銅
を溶解し、これに各合金元素を添加して鋳造し、第１表
（１）〜（２）に示す組成の直径２５朋、長さ１４０咽
のビレットを得た。これを面前して直径２０■、長さ１
３０■とじ、これを溝ロールによる冷間圧延と３００℃
の真空焼鈍を繰返し、直径８ｍで皮ムキ加工により直径
７．５＋ｍとした。これについて５０％の伸線加工と３
００℃の真空焼鈍を繰返し、直径２５μ常のボンディン
グ用Ｃｕ線を製造し、その伸線加工性を比較した。Example Using a vacuum melting and casting furnace, electrolytic copper with a purity of 99.997% was melted, and various alloying elements were added thereto and cast. I got a billet with a length of 140 mm. In front of this, the diameter is 20cm and the length is 1
30 ■ Stitched, cold rolled with grooved rolls and 300℃
The vacuum annealing process was repeated, and the diameter was 8 m, and the diameter was reduced to 7.5+ m by peeling. Regarding this, 50% wire drawing processing and 3
Vacuum annealing at 00° C. was repeated to produce bonding Cu wires with a diameter of 25 μm, and their wire drawability was compared.

また得られたＣｕ線について、２５０℃における高温引
張強度及び１０％Ｈ，＋　Ｎ、ガス中でのボール底形に
おけるポール形状及び５０２荷重でのボール歪量を調べ
た。ま几荷重５０ｇｒ、超音波出力０．ＩＷ、ボンディ
ング時間０．１μＳｅｅの条件における結線の形状を調
べた。後、プル試験によりＣｕ線のボンディング強度と
破断モードを調べた。これ等の結果を第１表（１）〜（
２）に併記した。尚ボール歪に横方向の直径り、と縦方
向の直径Ｄ２の比Ｄ１／Ｄ２で示し、た。In addition, the obtained Cu wire was examined for its high temperature tensile strength at 250°C, 10% H, +N, the pole shape in the ball bottom shape in gas, and the amount of ball distortion at 502 load. Machine load 50gr, ultrasonic output 0. The shape of the connection under the conditions of IW and bonding time of 0.1 μSee was investigated. Afterwards, the bonding strength and fracture mode of the Cu wire were investigated by a pull test. These results are shown in Table 1 (1)-(
Also listed in 2). The ball strain is expressed as the ratio D1/D2 of the diameter in the lateral direction and the diameter D2 in the longitudinal direction.

算１表−（１ 本発明Ｃｕ線　Ｉ　　　Ｃｕ−０，０５］Ｔ、ｉ−０，
０ＵＯ６Ｆｅ２　　　Ｃｕ−Ｑ、０４９Ｔｉ−０，０３
１Ｆｅ３　　　Ｃｕ−０，０５２Ｔｉ　−０，１８Ｆｅ
４　　　Ｃｕ−０，０５１Ｔｉ−０，０００６Ｎｉ５　
　　Ｃｕ−０，０４ＦＩＴｉ−０，０３５Ｎｉ／／　　
　　　　６　　　Ｃｕ−０，０４９Ｔｉ　−０，１７Ｎ
ｉ／’　　　　　　７　　　Ｃｕ−０，０５０Ｔｉ−０
，００ｊ１５Ｃｒｔｔ　　　　　　ＲＣｕ−０，０００
６Ｔｉ−０，０２９Ｃｒｔｔ　　　　　　９　　　Ｃｕ
−０，０５２Ｔｉ−０，０３２Ｃｒｔｔ　　　　　　１
０　　Ｃｕ−０，］８Ｔｉ−０，０３２Ｃｒｔｔ　　　
　　　１１　　Ｃｕ−０，０６］　Ｔ　ｌ　−０，１６
Ｃｒ１２　　Ｃｕ−０，０５２Ｔｉ−０，０００６Ｓｉ
／／　　　　　　１３　　Ｃｕ−０，０５１Ｔｉ−０，
１８Ｓｉｔｔ　　　　　　１４　　Ｃｕ−０，０５１Ｔ
ｉ−０，０００６Ｃ。Calculation table 1 - (1 Cu wire of the present invention I Cu-0,05]T, i-0,
0UO6Fe2 Cu-Q, 049Ti-0,03
1Fe3 Cu-0,052Ti-0,18Fe
4 Cu-0,051Ti-0,0006Ni5
Cu-0,04FITi-0,035Ni//
6 Cu-0,049Ti-0,17N
i/' 7 Cu-0,050Ti-0
,00j15Crtt RCu-0,000
6Ti-0,029Crtt9Cu
-0,052Ti-0,032Crtt 1
0 Cu-0,]8Ti-0,032Crtt
11 Cu-0,06] T l -0,16
Cr12Cu-0,052Ti-0,0006Si
// 13 Cu-0,051Ti-0,
18Sitt 14 Cu-0,051T
i-0,0006C.

／／　　　　　　１５　　Ｃｕ−０，０４８Ｔｉ−０，
１９（：。// 15 Cu-0,048Ti-0,
19(:.

／／　　　　　　］　６　　Ｃｕ−０，０６２Ｔｉ−０
，０００７Ｍｎｔ／　　　　　　１７　　Ｃｕ−０，０
５７Ｔｉ−０，１７Ｍｎｔｔ　　　　　　］　Ｆｔ　　
Ｃｕ−０，０５２Ｔｉ　　Ｏ，０００５Ａｔｔｔ　　　
　　　］　９　　Ｃｕ−０，０５］　Ｔ　ｉ　　Ｏ，１
９ｋｔ２０　　Ｃｕ−０，０５］Ｔｉ−０，０００６Ｂ
ｔｌ　　　　　　２３　　Ｃｕ−０，０５０Ｔｉ　−０
，１６Ｂａ　　　　　　２２　　Ｃｕ−０，０４９Ｔｉ
−０，０００６Ｚｒ／／　　　　　　２３　　Ｃｕ−０
，０５３Ｔ　ｉ　−０，１９Ｚ　ｒ２４　　Ｃｕ−０，
０４２Ｔｉ−０，０００９Ｆｅ−０，０００ＲＣｒ−０
，０／／　　　　　　２５　　Ｃｕ−ｏ、ｏｓｏ’ｒｉ
−０，０］３Ｎｉ−０，００２］Ｃｒ２６　　Ｃｕ−０
，０４８Ｔｉ−０，０５２Ｍｇｔｔ　　　　　　２７　
　Ｃｕ−０，０５４Ｔｉ−０，０５２Ｎｉ−０，０００
６Ｚｎ２８　　Ｃｕ−０，０５４Ｔｉ−０，００５３Ｎ
ｉ−０，］９Ｚｎｔｔ　　　　　　２９　　Ｃｕ−０，
０５１Ｔｉ−０，０５］Ｎｉ−０，０００７Ｓｎｏ　　
　　　　３（ｌ　　Ｃｕ−０，０５２Ｔｉ−０，０５］
Ｎｉ−０，］Ｒ８ｎ３］　　Ｃｕ−０，０５［’ｉ−０
．０５］Ｎｉ−０．０Ｏ（１６ｃａ３２　　Ｃｕ−０，
０５２Ｔｉ−０，０５ＯＮｉ−Ｏｊ７Ｃａ３３　　Ｃｕ
−０，０５０Ｔｉ−０，０５１Ｎｉ−０，０ＯＵ７Ｂｅ
３１　Ｃｕ−ＩＩす５１　Ｔ　ｉ　−＋１．ｉｌ　、１
８Ｎ　ｉ　−０，１Ｒ１３ｃ／／　　　　　　１０　　
　　　　ｔｔ　　　　　　ｔｔ　　　　　　　ｕ　　　
　　ｎ○　　　１２　　　　　ｎ　　　　Ｑ、７　　　
　　ｔｔ　　　　ｔｔ◎　　　　９　　　　　ｔｔ　　
　　Ｑ、ｉｌｌ　　　　７／　　　ａ〃　　　　　ＪＯ
〃　　　　　〃　　　　　　〃　　　　〃〃１２　　　
　　　ｔｔ　　　　　ｔｔ　　　　　　　ｔｔ　　　　
ｔｔｔｔ　　　　　　３３ｔｔ　　　　　Ｏ，ｇ　　　
　　　ｔｔ　　　　ｔｔ○　　　１２　　　　ｔｔ　　
　　ＱＪ（ｔｔ　　　　ｔｔ◎　　　］０　　　〃　　
　〃　　　　〃　　　〃０　　１３　　　　　ｔｔ　　
　　ｕ　　　　　　ｏ　　　　ｔｔ◎　　　Ｂ　　　　
　ｔｔ　　　　ｔｔ　　　　　ｎ　　　ｔｔ／／　　　
　　　１２　　　　　　ＬＬ　　　　　ｌ／　　　　　
　　／ｌ　　　　　／／／／　　　　　　８　　　　　
　ｔｔ　　　　　Ｏ，９ｔｔ　　　　ｔｔ〃　　　　】
ス 〃　　　　　９　　　　　〃　　　　〃　　　　　　〃
　　　　〃０　　３３　　　　　ａ　　　　Ｑｊ（ｔｔ
　　　　ｔｔ◎　　　］】〃〃 Ｑ　　　　１４　　　０　　　〃〃〃 ◎　　　　９　　　　◎　　　〃〃〃 〃１２　　　　　　ｔｔ　　　　　Ｏ０９ｎ　　　　　
ｔｔ１２Ｍｎ／／　　　　　　１１　　　　　　／／　
　　　　Ｏ，Ｒｎ　　　　ｔｔ／／　　　　　　３２　
　　　　　　　　　　　　　　　　　　ｔｔ　　　　　
ｔｔ／／　　　　　　１３　　　　　　ｎ　　　　　Ｏ
，９ｎ　　　　　ｔｔｔｔ　　　　　　ＩＱ　　　　　
　ｔｔ　　　　　Ｑ、Ｒａ　　　　　ｔｔ〃】２ １０　　　　　〃　　　　〃　　　　　　〃　　　　〃
１３　　　　　　／／　　　　　０．７／／　　　　　
　１０　　　　　　ｔｔ　　　　　Ｏ，８ｔｔ　　　　
ｎｎ　　　　　　１２　　　　　　　　　　　　　　　
　　　　ｎ　　　　　ｕ〃　　　　　】０ １、Ｉ　　　　　　Ｌ／　　　　　０．７第１表（１）
　〜（２）から明らかなように、Ｃｕ１ｃＴｉを加えた
もの、更にはこれにＺｎ％Ｓｎ、（：ａ％Ｂｅ。// ] 6 Cu-0,062Ti-0
,0007Mnt/ 17 Cu-0,0
57Ti-0,17Mntt ] Ft
Cu-0,052Ti O,0005Attt
] 9 Cu-0,05] T i O,1
9kt20 Cu-0,05]Ti-0,0006B
tl 23 Cu-0,050Ti-0
,16Ba22Cu-0,049Ti
-0,0006Zr// 23 Cu-0
,053T i -0,19Z r24 Cu-0,
042Ti-0,0009Fe-0,000RCr-0
,0// 25 Cu-o, oso'ri
-0,0]3Ni-0,002]Cr26 Cu-0
,048Ti-0,052Mgtt 27
Cu-0,054Ti-0,052Ni-0,000
6Zn28 Cu-0,054Ti-0,0053N
i-0, ]9Zntt 29 Cu-0,
051Ti-0,05]Ni-0,0007Sno
3(lCu-0,052Ti-0,05]
Ni-0,]R8n3] Cu-0,05['i-0
．． 05] Ni-0.0O (16ca32 Cu-0,
052Ti-0,05ONi-Oj7Ca33Cu
-0,050Ti-0,051Ni-0,0OU7Be
31 Cu-II51 T i −+1. il, 1
8N i -0,1R13c// 10
tt tt u
n○ 12 n Q, 7
tt tt◎ 9 tt
Q, ill 7/ a〃 JO
〃 〃 〃 〃〃12
tt tt tt
tttt 33tt O,g
tt tt○ 12 tt
QJ(tt tt◎ ]0 〃
〃 〃 〃0 13 tt
u o tt◎ B
tt tt n tt//
12 LL l/
/l //// 8
tt O,9tt tt〃]
〃 9 〃 〃 〃
〃0 33 a Qj(tt
tt◎ ]】〃〃 Q 14 0 〃〃〃 ◎ 9 ◎ 〃〃〃 〃12 tt O09n
tt12Mn// 11 //
O,Rntt//32
tt
tt // 13 n O
,9n tttt IQ
tt Q, Ra tt〃】2 10 〃 〃 〃 〃
13 // 0.7 //
10tt O,8tt
nn 12
n u〃 ]0 1, I L/ 0.7 Table 1 (1)
As is clear from (2), Cu1cTi is added to this, and Zn%Sn and (:a%Be) are added to this.

Ｙ、希土類元素の何れか１種又は２種以上（以下Ｚｎ等
と略記）を加えた本発明Ｃｕｉ随１〜４３は何れも高温
強度が８〜１４Ｆと優れ、ボール形状も真球に近く、ボ
ール歪みも従来のＡｕ線と同程度であるなど、ボンディ
ングワイヤーに必要とされる特性を十分に満足し、プル
試験からボンディング性も良いことが判る。Cui Nos. 1 to 43 of the present invention, which contain one or more of Y and rare earth elements (hereinafter abbreviated as Zn, etc.), have excellent high temperature strength of 8 to 14F, and the ball shape is close to a true sphere. It fully satisfies the characteristics required for bonding wires, such as ball distortion being on the same level as conventional Au wires, and pull tests show that it has good bonding properties.

これに対し比較Ｃｕ線、例えば純銅線Ｎ１４４、Ｃｕ−
Ｔｉ合金線Ｎａ４５．４６ではボンディングワイヤーに
必要とされる特性が劣り、またＣｕにＴｉとＮｉ等、更
にはこれにｚｎ等を加えたものでも、その含有量が本発
明で規定する量以上に含むもの（ＮｌＬ４７〜６１）で
は、比較Ｃｕ線Ｎ（Ｌ５７を除き何れも伸線加工性が悪
く、細線に加工するのを断念し、た。また比較Ｃｕ線随
５７に伸線加工性が良好なるも、ボール歪が大きく、ボ
ンディング性が劣ることが判る。In contrast, comparative Cu wires, such as pure copper wire N144, Cu-
Ti alloy wire Na45.46 has poor properties required for bonding wires, and even Cu with Ti, Ni, etc. added thereto, as well as Zn, etc., have a content exceeding the amount specified in the present invention. In the case of those containing (NlL47 to 61), all of the comparative Cu wires N (except L57) had poor wire drawability, and we gave up on processing them into thin wires.In addition, the comparative Cu wire No. 57 had good wire drawability. However, it can be seen that the ball distortion is large and the bonding performance is poor.

発明の効果 このように本発明＋Ｃｔｔ線は安価で、ボンディングワ
イヤーに必要とするすべての特性を満足すｂもので、半
導体装置のボンディングワイヤーとして、その接合信頼
性を著しく向上することができる顕著な効果を奏するも
σ）である。Effects of the Invention As described above, the +Ctt wire of the present invention is inexpensive, satisfies all the characteristics required for a bonding wire, and is an outstanding wire that can be used as a bonding wire for semiconductor devices to significantly improve its bonding reliability. The effect is also σ).

Claims (3)

【特許請求の範囲】[Claims] （１）Ｔｉ０．０００５〜０．２ｗｔ％と、Ｍｇ、Ｆｅ
、Ｎｉ、Ｃｒ、Ｓｉ、Ｃｏ、Ｍｎ、Ａｌ、Ｂ、Ｚｒの何
れか１種又は２種以上を合計で０．０００５〜０．２ｗ
ｔ％とを含み、残部Ｃｕからなる半導体素子ボンディン
グ用Ｃｕ線。(1) Ti0.0005-0.2wt%, Mg, Fe
, Ni, Cr, Si, Co, Mn, Al, B, Zr or more in total from 0.0005 to 0.2w
A Cu wire for bonding a semiconductor element, including t% and the balance being Cu. （２）残部Ｃｕに純度９９．９９ｗｔ％以上の純銅を用
いる特許請求の範囲第１項記載の半導体素子ボンディン
グ用Ｃｕ線。(2) The Cu wire for semiconductor element bonding according to claim 1, wherein the remaining Cu is pure copper with a purity of 99.99 wt% or more. （３）Ｔｉ０．０００５〜０．２ｗｔ％と、Ｍｇ、Ｆｅ
、Ｎｉ、Ｃｒ、Ｓｉ、Ｃｏ、Ｍｎ、Ａｌ、Ｂ、Ｚｒの何
れか１種又は２種以上を合計で０．０００５〜０．２ｗ
ｔ％と、Ｚｎ、ＳｎＣａ、Ｂｅ、Ｙ、希土類元素の何れ
か１種又は２種以上を合計で０．２ｗｔ％以下とを含み
、残部Ｃｕからなる半導体素子ボンディング用Ｃｕ線。(3) Ti0.0005-0.2wt%, Mg, Fe
, Ni, Cr, Si, Co, Mn, Al, B, Zr or more in total from 0.0005 to 0.2w
t% and a total of 0.2 wt% or less of any one or more of Zn, SnCa, Be, Y, and rare earth elements, and the balance is Cu for semiconductor device bonding.
JP60255277A 1985-11-14 1985-11-14 Cu wire for semiconductor device bonding Pending JPS62116743A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60255277A JPS62116743A (en) 1985-11-14 1985-11-14 Cu wire for semiconductor device bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60255277A JPS62116743A (en) 1985-11-14 1985-11-14 Cu wire for semiconductor device bonding

Publications (1)

Publication Number Publication Date
JPS62116743A true JPS62116743A (en) 1987-05-28

Family

ID=17276513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60255277A Pending JPS62116743A (en) 1985-11-14 1985-11-14 Cu wire for semiconductor device bonding

Country Status (1)

Country Link
JP (1) JPS62116743A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63171841A (en) * 1988-01-11 1988-07-15 Furukawa Electric Co Ltd:The Copper alloy for electronic equipment
US6758920B2 (en) 1999-11-24 2004-07-06 Honeywell International Inc. Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets
US6849139B2 (en) 1999-06-02 2005-02-01 Honeywell International Inc. Methods of forming copper-containing sputtering targets

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63171841A (en) * 1988-01-11 1988-07-15 Furukawa Electric Co Ltd:The Copper alloy for electronic equipment
US6849139B2 (en) 1999-06-02 2005-02-01 Honeywell International Inc. Methods of forming copper-containing sputtering targets
US6758920B2 (en) 1999-11-24 2004-07-06 Honeywell International Inc. Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets
US6858102B1 (en) * 2000-11-15 2005-02-22 Honeywell International Inc. Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets

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