JPS62114284A - 発光半導体素子を含む集積装置 - Google Patents
発光半導体素子を含む集積装置Info
- Publication number
- JPS62114284A JPS62114284A JP25458385A JP25458385A JPS62114284A JP S62114284 A JPS62114284 A JP S62114284A JP 25458385 A JP25458385 A JP 25458385A JP 25458385 A JP25458385 A JP 25458385A JP S62114284 A JPS62114284 A JP S62114284A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- base layer
- emitting semiconductor
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000005253 cladding Methods 0.000 claims description 20
- 238000005036 potential barrier Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 51
- 239000000758 substrate Substances 0.000 description 7
- 230000010354 integration Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- SUDBRAWXUGTELR-HPFNVAMJSA-N 5-[[(2r,3r,4s,5s,6r)-3,4,5-trihydroxy-6-(hydroxymethyl)oxan-2-yl]oxymethyl]-1h-pyrimidine-2,4-dione Chemical compound O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@H]1OCC1=CNC(=O)NC1=O SUDBRAWXUGTELR-HPFNVAMJSA-N 0.000 description 1
- 206010011878 Deafness Diseases 0.000 description 1
- 241000220259 Raphanus Species 0.000 description 1
- 235000006140 Raphanus sativus var sativus Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25458385A JPS62114284A (ja) | 1985-11-13 | 1985-11-13 | 発光半導体素子を含む集積装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25458385A JPS62114284A (ja) | 1985-11-13 | 1985-11-13 | 発光半導体素子を含む集積装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62114284A true JPS62114284A (ja) | 1987-05-26 |
| JPH0519997B2 JPH0519997B2 (enrdf_load_stackoverflow) | 1993-03-18 |
Family
ID=17267051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25458385A Granted JPS62114284A (ja) | 1985-11-13 | 1985-11-13 | 発光半導体素子を含む集積装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62114284A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4987576A (en) * | 1988-11-30 | 1991-01-22 | Siemens Aktiengesellschaft | Electrically tunable semiconductor laser with ridge waveguide |
| JPH0766473A (ja) * | 1993-08-26 | 1995-03-10 | Matsushita Electric Ind Co Ltd | ガスレーザ発振器 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59222987A (ja) * | 1983-06-01 | 1984-12-14 | Matsushita Electric Ind Co Ltd | 化合物半導体素子およびその製造方法 |
| JPS6091691A (ja) * | 1983-10-25 | 1985-05-23 | Sharp Corp | 半導体レ−ザ装置 |
-
1985
- 1985-11-13 JP JP25458385A patent/JPS62114284A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59222987A (ja) * | 1983-06-01 | 1984-12-14 | Matsushita Electric Ind Co Ltd | 化合物半導体素子およびその製造方法 |
| JPS6091691A (ja) * | 1983-10-25 | 1985-05-23 | Sharp Corp | 半導体レ−ザ装置 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4987576A (en) * | 1988-11-30 | 1991-01-22 | Siemens Aktiengesellschaft | Electrically tunable semiconductor laser with ridge waveguide |
| JPH0766473A (ja) * | 1993-08-26 | 1995-03-10 | Matsushita Electric Ind Co Ltd | ガスレーザ発振器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0519997B2 (enrdf_load_stackoverflow) | 1993-03-18 |
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