JPS62113794A - 帯状シリコン結晶の製造方法 - Google Patents

帯状シリコン結晶の製造方法

Info

Publication number
JPS62113794A
JPS62113794A JP25409985A JP25409985A JPS62113794A JP S62113794 A JPS62113794 A JP S62113794A JP 25409985 A JP25409985 A JP 25409985A JP 25409985 A JP25409985 A JP 25409985A JP S62113794 A JPS62113794 A JP S62113794A
Authority
JP
Japan
Prior art keywords
crystal
crucible
silicon
band
silicon melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25409985A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0375514B2 (enExample
Inventor
Michiya Kobayashi
道哉 小林
Toshiro Matsui
松井　都四郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP25409985A priority Critical patent/JPS62113794A/ja
Publication of JPS62113794A publication Critical patent/JPS62113794A/ja
Publication of JPH0375514B2 publication Critical patent/JPH0375514B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP25409985A 1985-11-13 1985-11-13 帯状シリコン結晶の製造方法 Granted JPS62113794A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25409985A JPS62113794A (ja) 1985-11-13 1985-11-13 帯状シリコン結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25409985A JPS62113794A (ja) 1985-11-13 1985-11-13 帯状シリコン結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS62113794A true JPS62113794A (ja) 1987-05-25
JPH0375514B2 JPH0375514B2 (enExample) 1991-12-02

Family

ID=17260207

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25409985A Granted JPS62113794A (ja) 1985-11-13 1985-11-13 帯状シリコン結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS62113794A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009029761A1 (en) * 2007-08-31 2009-03-05 Evergreen Solar, Inc. Ribbon crystal string with extruded refractory material
US8304057B2 (en) 2007-08-31 2012-11-06 Max Era, Inc. Ribbon crystal end string with multiple individual strings

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58194798A (ja) * 1982-05-07 1983-11-12 Toshiba Corp 平板状シリコン結晶の成長装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58194798A (ja) * 1982-05-07 1983-11-12 Toshiba Corp 平板状シリコン結晶の成長装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009029761A1 (en) * 2007-08-31 2009-03-05 Evergreen Solar, Inc. Ribbon crystal string with extruded refractory material
US7651768B2 (en) 2007-08-31 2010-01-26 Evergreen Solar, Inc. Reduced wetting string for ribbon crystal
CN101784701A (zh) * 2007-08-31 2010-07-21 长青太阳能股份有限公司 具有经挤出的耐火材料的带状晶体线
US8304057B2 (en) 2007-08-31 2012-11-06 Max Era, Inc. Ribbon crystal end string with multiple individual strings
US8309209B2 (en) 2007-08-31 2012-11-13 Max Era, Inc. Ribbon crystal string for increasing wafer yield

Also Published As

Publication number Publication date
JPH0375514B2 (enExample) 1991-12-02

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Legal Events

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