JPS62108560A - Water-cooling fin for semiconductor device - Google Patents
Water-cooling fin for semiconductor deviceInfo
- Publication number
- JPS62108560A JPS62108560A JP24720385A JP24720385A JPS62108560A JP S62108560 A JPS62108560 A JP S62108560A JP 24720385 A JP24720385 A JP 24720385A JP 24720385 A JP24720385 A JP 24720385A JP S62108560 A JPS62108560 A JP S62108560A
- Authority
- JP
- Japan
- Prior art keywords
- water
- semiconductor device
- cooling
- insulator
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
この発明は、冷却水流路の内周面に絶縁物を介在させた
半導体装置用水冷フィンに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to a water cooling fin for a semiconductor device in which an insulator is interposed on the inner peripheral surface of a cooling water flow path.
[従来の技術]
抵抗溶接機用などに使用される半導体スタックは、第3
図に示すように、たとえばサイリスタなどの平形半導体
装置1を挟み、そのアノード−カソード側にそれぞれ金
属製ブロックからなる水冷フィン2.2を配置し、これ
らを1単位とする積層加圧接触構造としたものである。[Prior art] Semiconductor stacks used for resistance welding machines, etc.
As shown in the figure, a laminated pressure contact structure in which a flat semiconductor device 1 such as a thyristor is sandwiched, and water cooling fins 2.2 made of metal blocks are arranged on the anode and cathode sides respectively, and these constitute one unit. This is what I did.
そして各水冷フィン2.2間は、絶縁物ホース3で接続
され冷却水の循環経路を形成している。The water cooling fins 2.2 are connected by an insulating hose 3 to form a cooling water circulation path.
上記のような半導体スタックの冷却用として用いられる
冷却水は、一般に上水道水、または公営の工業用水道水
であるが、半導体スタックの性能を充分確保するために
は、電気抵抗率が5,000Ω・cm以上の冷却水が望
ましい。しかし、水資源の節約の必要性、運転コストの
低減などの見地から冷却水を循環させて使用する場合も
多く、所定のろ過装置を通過させても次第に水質が悪く
なることは否めない。かかる場合、冷却水の電気抵抗率
が低下し、そのため冷却水に接する水冷フィン2.2間
の絶縁抵抗が低下する。The cooling water used for cooling the semiconductor stack as described above is generally tap water or public industrial tap water, but in order to ensure sufficient performance of the semiconductor stack, the electrical resistivity must be 5,000Ω.・Cooling water of cm or more is desirable. However, due to the need to conserve water resources and reduce operating costs, cooling water is often circulated and used, and it cannot be denied that the quality of the water gradually deteriorates even if it passes through a designated filtration device. In such a case, the electrical resistivity of the cooling water decreases, and therefore the insulation resistance between the water cooling fins 2.2 in contact with the cooling water decreases.
そこで、従来では第4図に示すように、平形半導体装置
1と水冷フィン2との間に絶縁シート4を介在させる方
法などが提案されている。Conventionally, a method has been proposed in which an insulating sheet 4 is interposed between the flat semiconductor device 1 and the water cooling fins 2, as shown in FIG.
[発明が解決しようとする問題点コ
上記のように従来では、平形半導体装置1と水冷フィン
2とを絶縁するために絶縁シート4を介在させているが
、その場合、各電極から引出す外部導出端子5.6が必
要となり、部品点数、朝立工数が増加するとともに、冷
却効果が低下するなどの問題点があった。[Problems to be Solved by the Invention] As described above, conventionally, an insulating sheet 4 is interposed to insulate the flat semiconductor device 1 and the water cooling fins 2, but in this case, external leads drawn out from each electrode Terminals 5 and 6 are required, which increases the number of parts and the number of man-hours required for assembly, and there are problems such as a decrease in the cooling effect.
[発明の目的コ
この発明は、上記のような問題点を解決するためになさ
れたもので、外部導出端子を必要とせず、部品点数、組
立工数を増加させず、かつ冷却効果の高い半導体装置用
水冷フィンを得ることを目的とする。[Purpose of the Invention] This invention was made to solve the above-mentioned problems, and provides a semiconductor device that does not require external lead-out terminals, does not increase the number of parts or assembly man-hours, and has a high cooling effect. The purpose is to obtain water cooling fins for use.
[問題点を解決するための手段]
この発明にかかる半導体装置用水冷フィンは、金属性ブ
ロックからなる半導体装置用水冷フィン内に設けた冷却
水流路の内周面に、絶縁物を介在させたものである。[Means for Solving the Problems] A water cooling fin for a semiconductor device according to the present invention has an insulating material interposed on the inner peripheral surface of a cooling water flow path provided in a water cooling fin for a semiconductor device made of a metal block. It is something.
[作用] 。[Effect].
この発明の半導体装置用水冷フィンにおいては、冷却水
流路の内周面に介在させた絶縁物が、平形半導体装置と
半導体装置用水冷フィンとの間を電気的に絶縁する。In the water cooling fin for a semiconductor device of the present invention, the insulator interposed on the inner peripheral surface of the cooling water flow path electrically insulates between the flat semiconductor device and the water cooling fin for a semiconductor device.
[実施例]
以下に、この発明の実施例を第1図および第2図に基づ
いて説明する。[Example] Hereinafter, an example of the present invention will be described based on FIG. 1 and FIG. 2.
第1図はこの発明にかかる半導体装置用水冷フィンの第
1の実施例を示す縦断面図である。FIG. 1 is a longitudinal sectional view showing a first embodiment of a water cooling fin for a semiconductor device according to the present invention.
図において、2は銅製ブロックからなる半導体装置用水
冷フィン、7はこの半導体装置用水冷フィン2を貫通す
る冷却流路を形成するための銅なとの良熱・良電気伝導
性金属からなる金属製バイブであり、この金属製バイブ
7は、あらかじめ、はんだ8を用いて半導体装置用水冷
フィン2に固着させておく。In the figure, 2 is a water-cooling fin for a semiconductor device made of a copper block, and 7 is a metal made of a metal with good heat and good electrical conductivity such as copper for forming a cooling channel passing through the water-cooling fin 2 for a semiconductor device. This metal vibrator 7 is fixed in advance to the water cooling fin 2 for semiconductor device using solder 8.
次いで、冷却水が通過する上記金属製バイブ7の内周面
、および半導体装置用水冷フィン2から突出した金属製
バイブ7の外周面を絶縁物9て被覆する。この絶縁物9
は、たとえば四弗化樹脂(商品名:テフロン)であり、
焼付処理により被覆層を形成する。あるいは上記焼付処
理に替え、エポキシ系の樹脂、絶縁性塗料などを用い、
ディップ法により塗布する。Next, the inner circumferential surface of the metal vibrator 7 through which the cooling water passes and the outer circumferential surface of the metal vibrator 7 protruding from the semiconductor device water cooling fin 2 are covered with an insulator 9. This insulator 9
is, for example, tetrafluoride resin (trade name: Teflon),
A coating layer is formed by baking. Alternatively, instead of the above baking treatment, use epoxy resin, insulating paint, etc.
Apply by dip method.
上記第1の実施例により、金属製パイプ7内を通過する
冷却水と半導体装置用水冷フィン2とは、絶縁物9によ
って完全に絶縁されるので、半導体装置用水冷フィン2
の表面に第3図、第4図に示した平形半導体装置lを直
接、接触させることができる。According to the first embodiment, the cooling water passing through the metal pipe 7 and the water cooling fins 2 for semiconductor devices are completely insulated by the insulator 9.
The flat semiconductor device l shown in FIGS. 3 and 4 can be brought into direct contact with the surface of the substrate.
すなわち、たとえ循環水路を流れる冷却水の水質が悪化
し、冷却水の電気抵抗率が低下したとしても前記金属製
バイブ7の内周面に介在させた絶縁物9により、平形半
導体装置2と半導体装置用水冷フィン2との間の絶縁性
は高度に維持されるので問題は生じない。That is, even if the quality of the cooling water flowing through the circulation channel deteriorates and the electrical resistivity of the cooling water decreases, the insulator 9 interposed on the inner peripheral surface of the metal vibrator 7 will keep the flat semiconductor device 2 and the semiconductor Since the insulation between the device water cooling fins 2 and the water cooling fins 2 is maintained at a high level, no problem arises.
次に、第2図に基づきこの発明の第2の実施例を説明す
る。Next, a second embodiment of the present invention will be described based on FIG.
この実施例では、半導体装置用水冷フィン20貫通孔の
内面、および金属製バイブ7の外周面にねじ10を切り
、金属製バイブ7の内周面、およびその両端部を前記第
1の実施例と同様に絶縁処理する。なお、この絶縁処理
は、半導体装置用水冷フィン2に、金属製バイブ7をね
じ込む以前に行ってもよいし、または金属製バイブ7を
半導体装置用水冷フィン2にねじ込んだ後に行ってもよ
い。また、金属製バイブ7をねじ込む場合には、そのね
じ部に適当なサーマルコンパウンドなどをあらかじめ塗
布しておくことにより、金属製バイブ7と半導体装置用
水冷フィン2との熱伝導が良好になって望ましい。In this embodiment, screws 10 are cut on the inner surface of the through hole of the water cooling fin 20 for semiconductor devices and on the outer circumferential surface of the metal vibrator 7, and the inner circumferential surface of the metal vibrator 7 and both ends thereof Insulate it in the same way. Note that this insulation treatment may be performed before screwing the metal vibrator 7 into the water cooling fin 2 for semiconductor devices, or after screwing the metal vibrator 7 into the water cooling fin 2 for semiconductor devices. Furthermore, when screwing in the metal vibrator 7, applying an appropriate thermal compound or the like to the threaded portion in advance improves the heat conduction between the metal vibrator 7 and the water cooling fin 2 for semiconductor devices. desirable.
上記第2の実施例では、前記第1の実施例の効果に加え
、ねじ部の形成により半導体装置用水冷フィン2と、金
属製バイブ7との接触面積が増加し、冷却効果が向上す
るなどの付随的な効果もある。In addition to the effects of the first embodiment, the second embodiment increases the contact area between the semiconductor device water cooling fin 2 and the metal vibe 7 due to the formation of the threaded portion, improving the cooling effect, etc. There are also secondary effects.
[発明の効果]
以上の説明のように、この発明は金属性ブロックからな
る半導体装置用水冷フィン内に設けた冷却水流路の内周
面に、絶縁物層を介在させたので、従来のように別部品
として絶縁シート、外部導出端子などをイ:要とし、部
品点数、組立工数を削減できるとともに、平形半導体装
置と半導体装置用水冷フィンとの間には外部導出端子な
と、余分な部品が介在しないので冷却効果を低1;させ
ろこともないなど優れた効果を奏する。[Effects of the Invention] As described above, the present invention has an insulating layer interposed on the inner peripheral surface of the cooling water flow path provided in the water cooling fin for semiconductor devices made of a metal block. Insulating sheets, external lead-out terminals, etc. are required as separate parts, reducing the number of parts and assembly man-hours, and eliminating unnecessary parts such as external lead-out terminals between the flat semiconductor device and the water cooling fin for semiconductor devices. Since there is no intervention, the cooling effect is low and does not cause any problems.
第1図はこの発明の第1の実施例を示す半導体装置用水
冷フィンの縦断面図、第2図はこの発明の第2の実施例
を示す半導体装置用水冷フィンの縦断面図、第3図およ
び第4図は従来の半導体装置用水冷フィンを用いた半導
体スタ・ンクの冷却方法を示す説明図である。
図において、1・・パト形半導体装置、2・・・半導体
装置用水冷ツーフン、;3・・・絶縁物ボース、7・・
・金属製パイプ、 9・・・絶縁物層である。
なお、各図中、同一符号は同一、または相当部分を示す
。FIG. 1 is a longitudinal sectional view of a water cooling fin for a semiconductor device showing a first embodiment of the present invention, FIG. 2 is a longitudinal sectional view of a water cooling fin for a semiconductor device showing a second embodiment of the invention, and FIG. 4 and 4 are explanatory diagrams showing a method of cooling a semiconductor stack using conventional water cooling fins for semiconductor devices. In the figure, 1...PAT type semiconductor device, 2...Water cooling tool for semiconductor device, 3...Insulator board, 7...
・Metal pipe, 9...insulator layer. In each figure, the same reference numerals indicate the same or corresponding parts.
Claims (1)
導体装置用水冷フィンにおいて、前記冷却水流路の内周
面に絶縁物を介在させたことを特徴とする半導体装置用
水冷フィン。 2、前記冷却水流路を、その内周面に絶縁物を介在させ
た金属製パイプで形成したことを特徴とする特許請求の
範囲第1項記載の半導体装置用水冷フィン。[Scope of Claims] 1. A water cooling fin for a semiconductor device having a cooling water flow path penetrating through a metal block, characterized in that an insulator is interposed on the inner peripheral surface of the cooling water flow path. water cooling fins. 2. The water cooling fin for a semiconductor device according to claim 1, wherein the cooling water flow path is formed of a metal pipe with an insulator interposed on the inner peripheral surface thereof.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24720385A JPS62108560A (en) | 1985-11-06 | 1985-11-06 | Water-cooling fin for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24720385A JPS62108560A (en) | 1985-11-06 | 1985-11-06 | Water-cooling fin for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62108560A true JPS62108560A (en) | 1987-05-19 |
Family
ID=17159981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24720385A Pending JPS62108560A (en) | 1985-11-06 | 1985-11-06 | Water-cooling fin for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62108560A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7304379B2 (en) | 2003-08-27 | 2007-12-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with pipe for passing refrigerant liquid |
CN109219499A (en) * | 2016-06-03 | 2019-01-15 | 自动化及焊接机股份有限公司 | Structure arrangement for plasma or the cooling system for being cut by laser bonding machine |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5752154A (en) * | 1980-09-16 | 1982-03-27 | Hitachi Ltd | Cooler for semiconductor |
-
1985
- 1985-11-06 JP JP24720385A patent/JPS62108560A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5752154A (en) * | 1980-09-16 | 1982-03-27 | Hitachi Ltd | Cooler for semiconductor |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7304379B2 (en) | 2003-08-27 | 2007-12-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with pipe for passing refrigerant liquid |
US7705448B2 (en) | 2003-08-27 | 2010-04-27 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device for pipe for passing refrigerant liquid |
CN109219499A (en) * | 2016-06-03 | 2019-01-15 | 自动化及焊接机股份有限公司 | Structure arrangement for plasma or the cooling system for being cut by laser bonding machine |
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