JPS6292349A - Cooling device for semiconductor element - Google Patents

Cooling device for semiconductor element

Info

Publication number
JPS6292349A
JPS6292349A JP23266985A JP23266985A JPS6292349A JP S6292349 A JPS6292349 A JP S6292349A JP 23266985 A JP23266985 A JP 23266985A JP 23266985 A JP23266985 A JP 23266985A JP S6292349 A JPS6292349 A JP S6292349A
Authority
JP
Japan
Prior art keywords
water
semiconductor element
cooling
cooling block
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23266985A
Other languages
Japanese (ja)
Inventor
Hajime Maeda
前田　甫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23266985A priority Critical patent/JPS6292349A/en
Publication of JPS6292349A publication Critical patent/JPS6292349A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To display the characteristic rating of a semiconductor element sufficiently, and to remove the possibility of an electrical shock by molding an electric insulating material to either one surface of contact surfaces among current terminals and cooling blocks and electrically insulating the current terminals and the cooling blocks. CONSTITUTION:Insulating layers 9b are molded to sections being in contact with current terminals 2 in cooling blocks 9a consisting of a metal having excellent thermal conductivity such as copper. Heat generated from a semiconductor element 1 is transmitted to water through the current terminals 2, the insulating layers 9b and the blocks 9a, and water is circulated to the outside, thus cooling the element 1. Thermal conductivity is affected only by the insulating layers 9b and is not deteriorated largely at that time. Water in a water channel is insulated completely by an electric circuit and insulating type cooling blocks 9, thus removing the possibility of an electrical shock.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発Ｆ！４は、半導体素子に使用される電気機器の冷
却装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This F! Reference numeral 4 relates to a cooling device for electrical equipment used for semiconductor devices.

［従来の技術Ｊ 電気機器、特にダイオード、サイリスク、トランジスタ
等の半導体素子は温度によって、その特性が変化しやす
いばかりでなく、放熱が悪い環境にあっては局部発熱に
よって破壊する危険もある之め、従来から種々の冷却装
置が考えられてきた。[Conventional Technology J Electrical equipment, especially semiconductor elements such as diodes, silices, and transistors, not only have their characteristics easily changed depending on temperature, but also have the risk of being destroyed by local heat generation in environments with poor heat dissipation. Various cooling devices have been considered in the past.

このうち、水冷半導体装置の従来の実施例について第２
図の縦断面図で説明する。Of these, the second example is about conventional embodiments of water-cooled semiconductor devices.
This will be explained using the longitudinal cross-sectional view in the figure.

（１）は半導体素子、（２）は１対の電流端子、（３）
は銅などの熱伝導性良好な金属から成る冷却ブロックで
あり、（４）はその内部に設けられた水路である。(1) is a semiconductor element, (2) is a pair of current terminals, (3)
is a cooling block made of a metal with good thermal conductivity such as copper, and (4) is a water channel provided inside the cooling block.

（５）　Ｉｒｉ冷却ブロック（３〕にねじ込み又はｂ−
付けにより取付けられた黄銅などの金民から成るホース
ニップルである。(5) Screw into Iri cooling block (3) or b-
A hose nipple made of metal such as brass that is attached by attaching.

さらにホースニップル（５）は配管ホース（６）で連結
されており、この配管ホース（６〕および水路（４）に
は、図示の矢印方向に水が流れるようになっている。Furthermore, the hose nipple (5) is connected with a piping hose (6), and water flows through the piping hose (6) and the water channel (4) in the direction of the arrow shown.

そして、半導体素子（１）の発熱は冷却ブロック（３）
を経由して水に伝達され、吸収されるようになっている
。The heat generated by the semiconductor element (1) is then transferred to the cooling block (3).
It is transmitted to the water via the water and is absorbed.

また、（７〕は絶縁座であり、この絶縁座（７）Ｋより
冷却プロツタ（３）、電流端子（２）、半導体素子（１
）を挾んで圧接力を受けるようにするとともに、圧接構
造Ｓ（図示せず）と電気絶縁をしている。In addition, (7) is an insulating seat, and from this insulating seat (7) K, the cooling plotter (3), the current terminal (2), and the semiconductor element (1) are connected.
) to receive pressure contact force, and is electrically insulated from the pressure contact structure S (not shown).

［発明が解決しようとする問題点〕 このような従来の水冷半導体装置の最大の峻点は、水路
が帯電することにある。したがって半導体素子（１）の
両端にかかる電圧がそのまま配管ホース（６）および内
部の水に印加されるための水の抵抗が低いと多大のもれ
電流が水系路を流れ、特に直流電圧がかかれば、ホース
ニップル（５）が電流腐食により溶解、損耗され、短期
間で冷却ブロック（３）が使用不能となる。[Problems to be Solved by the Invention] The biggest drawback of such a conventional water-cooled semiconductor device is that the water channel becomes electrically charged. Therefore, since the voltage applied to both ends of the semiconductor element (1) is directly applied to the plumbing hose (6) and the water inside, if the resistance of the water is low, a large amount of leakage current will flow through the water system, especially when DC voltage is applied. For example, the hose nipple (5) is melted and worn out due to current corrosion, and the cooling block (3) becomes unusable in a short period of time.

また水の抵抗が低い場合、たとえば、人が同系路の水を
離れ念場所で使用したとしてもｇ電の恐れすらでてきて
危険である。これらを防止するため水抵抗はできる限り
高くする必要があり、さらに水質の管理も容易でない。Furthermore, if the resistance of the water is low, for example, even if a person uses water from the same system in a remote location, there is a risk of electrical shock, which is dangerous. In order to prevent these problems, it is necessary to make water resistance as high as possible, and furthermore, it is not easy to control water quality.

この対策として第３図の縦断面図の（４）に示すように
電流端子（２）と冷却ブロック（３）の間に絶縁生■（
８ａ）は、ベリリアやボロシナイトライド（ＢＮ）等か
らなる熱伝導性良好な絶縁材である。絶縁板の厚さは０
．５〜１．５Ｍ程度が一般的である。（８ｂ）は金属板
である。絶縁板（８ａ）と金属板（８ｂ）＃−を接着剤
（８ｃ）によって接着される。この目的は絶縁材（８ａ
）が非常例脆い性質のものであり、耐衝撃性の改善と取
扱いの容易化のためである。As a countermeasure for this, as shown in (4) in the longitudinal cross-sectional view of Figure 3, insulation is created between the current terminal (2) and the cooling block (3).
8a) is an insulating material with good thermal conductivity made of beryllia, borosininitride (BN), or the like. The thickness of the insulation plate is 0
．． It is generally about 5 to 1.5M. (8b) is a metal plate. The insulating plate (8a) and the metal plate (8b) #- are bonded together with an adhesive (8c). This purpose is for insulation (8a
) is extremely brittle, and this is to improve impact resistance and ease handling.

そして、この構造においては、半導体素子（１）の発熱
は電流端子（２）、絶縁生■そして冷却ブロック（３）
を経由して水に伝達され、吸収されるが、絶縁生（８）
の熱伝導効率は金属板（８ｂ）、接着剤（８ｃ）が介在
することにより相当に高くなってしまう。このために半
導体素子（１）の特性定格を相当に下げて使用せざるを
得ない。In this structure, the heat generated by the semiconductor element (1) is transferred to the current terminal (2), the insulator (2), and the cooling block (3).
It is transmitted to water via and absorbed, but it is an insulator (8)
The heat conduction efficiency becomes considerably high due to the presence of the metal plate (8b) and adhesive (8c). For this reason, it is necessary to use the semiconductor element (1) with its characteristic rating considerably lowered.

この発明の目的は半導体素子の特性定格を十分に発起で
き、感電の恐れはなく、また、電流腐食などは発生しな
い半導体素子を用いた電気機器の冷却装置を提供するこ
とである。An object of the present invention is to provide a cooling device for electrical equipment using a semiconductor element, which can sufficiently evaluate the characteristics of a semiconductor element, has no fear of electric shock, and does not cause current corrosion.

〔問題を解決するための手段〕[Means to solve the problem]

しかるに１この発明は冷却ブロックの電流端子との接触
面に絶縁層を成形したものである。However, in this invention, an insulating layer is formed on the contact surface of the cooling block with the current terminal.

〔作用］ すなわち、この絶縁層を冷却ブロックに成形することＫ
より、熱伝導効率をＦげることなく、電気回路と水系路
を絶縁することができる。[Function] That is, forming this insulating layer into a cooling block.
Therefore, the electric circuit and the water system can be insulated without reducing the heat conduction efficiency.

〔発明の実施例Ｊ 第１図は、この発明の一実施例を示す縦断面図である。[Embodiment J of the invention FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention.

図において第２図と同一番号は同一または相当部分示す
ものであり説明は省略する。In the figure, the same numbers as in FIG. 2 indicate the same or corresponding parts, and the explanation will be omitted.

すなわち、（１）　Ｉ／′ｉ、半導体素子、（２）　Ｆ
ｉ一対の電流端子であり、■は本発明による絶縁形冷却
ブロックである。（９ａ）は銅等の熱伝導性良好な金属
でなる冷却ブロックであり、電流端子（２）に接する部
分には絶縁層（９ｂ）が成形されている。この絶縁層（
９ｂ）はアルミナ、窒化アルミニタムやポロンナイトラ
イド等の熱伝導性良好な電気絶縁材料を溶射などにより
容易に成形できる。That is, (1) I/'i, semiconductor element, (2) F
i is a pair of current terminals, and ■ is an insulated cooling block according to the present invention. (9a) is a cooling block made of a metal with good thermal conductivity such as copper, and an insulating layer (9b) is formed on the portion that contacts the current terminal (2). This insulating layer (
9b) can be easily formed by thermal spraying or the like using an electrically insulating material with good thermal conductivity such as alumina, aluminum nitride, or poron nitride.

熱伝導性はやや劣るがエポキシ樹脂等の成形も有効であ
る。Molding with epoxy resin is also effective, although the thermal conductivity is somewhat inferior.

絶縁層の厚さは耐電圧により決まるが０．０５〜１．５
１程度の範囲が一般的である。The thickness of the insulating layer is determined by the withstand voltage, but is 0.05 to 1.5
A range of about 1 is common.

（４）　＃ｉ上記絶縁形冷却ブロック（ロ）の内部に設
けられた水路である。(4) #i is a water channel provided inside the insulated cooling block (b).

（５）　Ｆｉ絶縁形冷却ブロック（りにネジ込みあるい
はロー付等により取付けられたホースニップルである。(5) Fi insulated cooling block (hose nipple attached by screwing or brazing, etc.).

さらに配管ホース（６）はホースニップル（５）　ｔ−
介して、２つの絶縁形冷却ブロック■の水路（４）を連
結しており、該配管ホース（６）及び該水路には図示の
矢印方向に水が流れるようになっている。Furthermore, the piping hose (6) is connected to the hose nipple (5) t-
The water channels (4) of the two insulated cooling blocks (1) are connected through the pipe, and water flows through the piping hose (6) and the water channel in the direction of the arrow shown.

次に本装置の作用効果について説明する。この構造にお
いて、半導体素子（１）から発生した熱は、電流端子（
２）、絶縁層（９ｂ）、冷却ブロック（９ａ）を経由し
て水に伝達され、試水に吸収され、試水が外部へ循環す
ることにより半導体素子（１）　／ｉ冷却される。そし
てこの際、熱伝導効率は・ｄ！、線層（９ｂ）の影響の
みで大巾に悪くなることは解消できるとともに、水路内
部の水は電気回路と該絶縁形冷却ブロック■により完全
に絶縁されており、帯電することはない。Next, the effects of this device will be explained. In this structure, the heat generated from the semiconductor element (1) is transferred to the current terminal (
2) The semiconductor element (1) is cooled by being transmitted to the water via the insulating layer (9b) and the cooling block (9a), being absorbed by the sample water, and circulating the sample water to the outside. At this time, the heat conduction efficiency is ・d! , it is possible to eliminate the large deterioration caused only by the influence of the wire layer (9b), and the water inside the water channel is completely insulated by the electric circuit and the insulated cooling block (2), and is not charged with electricity.

従って本装置においては、熱伝導効率の良好で、感電の
恐れあるいは電流腐食などは発生しない。Therefore, this device has good heat conduction efficiency, and there is no risk of electric shock or current corrosion.

また、本発明を用いれば従来高純水を使用しなければ製
作不可能であった高電圧の半導体素子冷却装置をも容易
に実現できる。Further, by using the present invention, it is possible to easily realize a high-voltage semiconductor device cooling device, which conventionally could not be manufactured without using high-purity water.

なお、本発明は冷却ブロック（９ａ）に絶縁層（９ｂ）
を成形する場合について説明したが電流端子（２）に絶
縁層を成形した場合にも同じ効果が得られるものである
。また、半導体素子を複数個組合わせた場合にも広く適
用できる。Note that the present invention provides an insulating layer (9b) on the cooling block (9a).
Although the case where the current terminal (2) is molded has been described, the same effect can be obtained when an insulating layer is molded onto the current terminal (2). Furthermore, the present invention can be widely applied even when a plurality of semiconductor elements are combined.

〔発明の効果１ 以上のようにこの発りＪによれば、冷却ブロックに熱伝
導性の良好な電気絶縁材料を成形したので、熱伝導効率
が良く、冷却水が電気回路と完全に絶縁され、安全性が
高く、かつ電流腐食を防止できる効果がある。[Effect of the invention 1 As described above, according to this invention J, the cooling block is molded with an electrically insulating material with good thermal conductivity, so the heat conduction efficiency is good and the cooling water is completely insulated from the electric circuit. , is highly safe and has the effect of preventing current corrosion.

【図面の簡単な説明】[Brief explanation of drawings]

第１図はこの発明の一実施例を示す縦断面図、第２図、
第３図は従来の半導体素子冷却装置の構成例を示す縦断
面図である。 図において、（１）は半導体素子、（２）は電流端子、
（３）は従来の冷却ブロック、（４）は水路、（５）は
ホースニップル、（６）は配管、（７）、■は従来の絶
縁生、（８ａ）は絶縁板、（８ｂ）＃：を金属板、■は
絶縁形冷却ブロック、　（９ａ）は冷却ブロック、（９
ｂ）は絶縁層である。FIG. 1 is a vertical sectional view showing an embodiment of the present invention, FIG.
FIG. 3 is a longitudinal sectional view showing an example of the configuration of a conventional semiconductor device cooling device. In the figure, (1) is a semiconductor element, (2) is a current terminal,
(3) is a conventional cooling block, (4) is a water channel, (5) is a hose nipple, (6) is a pipe, (7), ■ is a conventional insulator, (8a) is an insulating plate, (8b) # : is a metal plate, ■ is an insulated cooling block, (9a) is a cooling block, (9
b) is an insulating layer.

Claims (1)

【特許請求の範囲】[Claims] 半導体素子の両側に電流端子そして冷却ブロックの順に
重ねて挾持された半導体冷却装置において、電流端子と
冷却ブロックの接触面のいずれか片方の面に電気絶縁材
料を成形し、電流端子と冷却ブロック間を電気絶縁した
ことを特徴とする半導体冷却装置。In a semiconductor cooling device in which current terminals and a cooling block are stacked and held on both sides of a semiconductor element, an electrically insulating material is molded on one of the contact surfaces between the current terminal and the cooling block, and the gap between the current terminal and the cooling block is A semiconductor cooling device characterized by being electrically insulated.
JP23266985A 1985-10-17 1985-10-17 Cooling device for semiconductor element Pending JPS6292349A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23266985A JPS6292349A (en) 1985-10-17 1985-10-17 Cooling device for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23266985A JPS6292349A (en) 1985-10-17 1985-10-17 Cooling device for semiconductor element

Publications (1)

Publication Number Publication Date
JPS6292349A true JPS6292349A (en) 1987-04-27

Family

ID=16942937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23266985A Pending JPS6292349A (en) 1985-10-17 1985-10-17 Cooling device for semiconductor element

Country Status (1)

Country Link
JP (1) JPS6292349A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2674989A1 (en) * 1991-04-02 1992-10-09 Hitachi Ltd COOLING DEVICE FOR A SEMICONDUCTOR ELEMENT
US6380622B1 (en) 1998-11-09 2002-04-30 Denso Corporation Electric apparatus having a contact intermediary member and method for manufacturing the same
US6538308B1 (en) 1998-07-14 2003-03-25 Denso Corporation Semiconductor apparatus with heat radiation structure for removing heat from semiconductor element
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
US6946730B2 (en) 2001-04-25 2005-09-20 Denso Corporation Semiconductor device having heat conducting plate
US7027302B2 (en) 2000-04-19 2006-04-11 Denso Corporation Coolant cooled type semiconductor device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2674989A1 (en) * 1991-04-02 1992-10-09 Hitachi Ltd COOLING DEVICE FOR A SEMICONDUCTOR ELEMENT
US6538308B1 (en) 1998-07-14 2003-03-25 Denso Corporation Semiconductor apparatus with heat radiation structure for removing heat from semiconductor element
US7009284B2 (en) 1998-07-14 2006-03-07 Denso Corporation Semiconductor apparatus with heat radiation structure for removing heat from semiconductor element
US6380622B1 (en) 1998-11-09 2002-04-30 Denso Corporation Electric apparatus having a contact intermediary member and method for manufacturing the same
DE19951752B4 (en) * 1998-11-09 2012-07-26 Denso Corporation Electric pressure contact device and method for its production
US6960825B2 (en) 1999-11-24 2005-11-01 Denso Corporation Semiconductor device having radiation structure
US6703707B1 (en) 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US6798062B2 (en) 1999-11-24 2004-09-28 Denso Corporation Semiconductor device having radiation structure
US6891265B2 (en) 1999-11-24 2005-05-10 Denso Corporation Semiconductor device having radiation structure
US6967404B2 (en) 1999-11-24 2005-11-22 Denso Corporation Semiconductor device having radiation structure
US6992383B2 (en) 1999-11-24 2006-01-31 Denso Corporation Semiconductor device having radiation structure
US6998707B2 (en) 1999-11-24 2006-02-14 Denso Corporation Semiconductor device having radiation structure
US7106592B2 (en) 2000-04-19 2006-09-12 Denso Corporation Coolant cooled type semiconductor device
US7027302B2 (en) 2000-04-19 2006-04-11 Denso Corporation Coolant cooled type semiconductor device
US7248478B2 (en) 2000-04-19 2007-07-24 Denso Corporation Coolant cooled type semiconductor device
US7250674B2 (en) 2000-04-19 2007-07-31 Denso Corporation Coolant cooled type semiconductor device
US6963133B2 (en) 2001-04-25 2005-11-08 Denso Corporation Semiconductor device and method for manufacturing semiconductor device
US6946730B2 (en) 2001-04-25 2005-09-20 Denso Corporation Semiconductor device having heat conducting plate

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